| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MIXA60HU1200VA | IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; buck chopper; H-bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: V1-A-Pack Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA60W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA60WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA60WH1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: fans; for pump; motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA61H1200ED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Topology: H-bridge Technology: Sonic FRD™; XPT™ Case: E2-Pack Application: motors; photovoltaics Power dissipation: 290W Collector current: 60A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 150A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 190A Case: E3-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA80R1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: V1-A-Pack Power dissipation: 390W Gate-emitter voltage: ±20V Collector current: 84A Pulsed collector current: 225A Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: boost chopper кількість в упаковці: 1 шт |
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| MIXA80W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E3-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Collector current: 84A кількість в упаковці: 1 шт |
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| MIXA80W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Case: E2-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 84A Pulsed collector current: 225A Power dissipation: 390W кількість в упаковці: 1 шт |
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| MIXA80W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A кількість в упаковці: 1 шт |
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| MIXA80WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A Application: motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A кількість в упаковці: 1 шт |
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| MIXA81H1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Topology: H-bridge Technology: Sonic FRD™; XPT™ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 390W Collector current: 84A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 225A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXA81WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A Application: fans; for pump; motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A кількість в упаковці: 1 шт |
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| MIXG120W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E3-Pack Type of module: IGBT Technology: X2PT Collector current: 140A Topology: IGBT three-phase bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG120W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E3-Pack Type of module: IGBT Technology: X2PT Collector current: 140A Topology: IGBT three-phase bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG180W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E3-Pack Type of module: IGBT Technology: X2PT Collector current: 195A Topology: IGBT three-phase bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG180W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E3-Pack Type of module: IGBT Technology: X2PT Collector current: 195A Topology: IGBT three-phase bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG240RF1200PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 250A Case: E2-Pack PFP Electrical mounting: Press-Fit Technology: X2PT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MIXG240W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E3-Pack Type of module: IGBT Technology: X2PT Collector current: 233A Topology: IGBT three-phase bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG240W1200PZTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 233A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: X2PT Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor Case: E3-Pack кількість в упаковці: 1 шт |
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| MIXG240W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E3-Pack Type of module: IGBT Technology: X2PT Collector current: 233A Topology: IGBT three-phase bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG300PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Case: SimBus F Technology: X2PT Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; NTC thermistor Collector current: 315A кількість в упаковці: 1 шт |
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| MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG450PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Collector current: 435A Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV кількість в упаковці: 1 шт |
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| MIXG490PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG490PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
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| MIXG70W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E2-Pack Type of module: IGBT Technology: X2PT Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Collector current: 79A кількість в упаковці: 1 шт |
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| MKE38P600LB | IXYS |
MKE38P600LB Multi channel transistors |
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| MKE38RK600DFELB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Case: SMPD Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhanced Semiconductor structure: diode/transistor Reverse recovery time: 50ns кількість в упаковці: 1 шт |
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| MKI100-12F8 | IXYS |
MKI100-12F8 IGBT modules |
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| MKI50-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Topology: H-bridge; NTC thermistor Technology: NPT Case: E2-Pack Application: for UPS; motors Power dissipation: 225W Collector current: 50A Type of module: IGBT Max. off-state voltage: 0.6kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MKI50-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A Case: E2-Pack Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 225W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| MKI50-12F7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W Topology: H-bridge Technology: HiPerFRED™; NPT Case: E2-Pack Application: motors Power dissipation: 350W Collector current: 45A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MKI65-06A7T | IXYS | MKI65-06A7T IGBT modules |
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| MKI75-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: for UPS; motors Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Case: E2-Pack Pulsed collector current: 120A Collector current: 60A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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MMIX1F132N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 330A Power dissipation: 520W Case: SMPD Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: SMD Gate charge: 267nC Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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MMIX1F160N30T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Pulsed drain current: 440A Power dissipation: 570W Case: SMPD Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 367nC Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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| MMIX1F180N25T | IXYS |
MMIX1F180N25T SMD N channel transistors |
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MMIX1F210N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Pulsed drain current: 550A Power dissipation: 520W Case: SMPD Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 268nC Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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| MMIX1F230N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 156A Pulsed drain current: 630A Power dissipation: 600W Case: SMPD Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 358nC Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 680W Polarisation: unipolar Drain current: 235A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A On-state resistance: 4.4mΩ Drain-source voltage: 150V кількість в упаковці: 1 шт |
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MMIX1F40N110P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.1kV Drain current: 24A Pulsed drain current: 100A Power dissipation: 500W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 310nC Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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| MMIX1F420N10T | IXYS |
MMIX1F420N10T SMD N channel transistors |
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MMIX1F44N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 110A Power dissipation: 694W Case: SMPD Gate-source voltage: ±30V On-state resistance: 245mΩ Mounting: SMD Gate charge: 264nC Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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MMIX1F520N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD Type of transistor: N-MOSFET Mounting: SMD Case: SMPD On-state resistance: 1.6mΩ Kind of package: tube Technology: GigaMOS™; HiPerFET™; TrenchT2™ Power dissipation: 830W Polarisation: unipolar Drain-source voltage: 75V Gate charge: 545nC Reverse recovery time: 150ns Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 500A кількість в упаковці: 1 шт |
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| MMIX1G120N120A3V1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 105A Pulsed collector current: 700A Turn-on time: 105ns Turn-off time: 1365ns Type of transistor: IGBT Power dissipation: 400W Kind of package: tube Gate charge: 420nC Technology: BiMOSFET™; GenX3™; PT Mounting: SMD Case: SMPD кількість в упаковці: 1 шт |
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| MMIX1G320N60B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 600V Collector current: 180A Power dissipation: 1kW Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns кількість в упаковці: 1 шт |
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| MMIX1H60N150V1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; SMPD; SMD; 32kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: SMPD Mounting: SMD Max. forward impulse current: 32kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) кількість в упаковці: 1 шт |
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 +1 |
MMIX1T550N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W Type of transistor: N-MOSFET Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 2kA Power dissipation: 830W Case: SMPD Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 595nC Kind of channel: enhanced Reverse recovery time: 100ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
|
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 +1 |
MMIX1T600N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W Mounting: SMD Power dissipation: 830W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 1.3mΩ Drain current: 600A Drain-source voltage: 40V Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhanced Reverse recovery time: 100ns Gate-source voltage: ±20V Pulsed drain current: 2kA Case: SMPD кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
|
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| MMIX1X100N60B3H1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 68A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 143nC Kind of package: tube Turn-on time: 92s Turn-off time: 350ns кількість в упаковці: 1 шт |
товар відсутній |
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| MMIX1X200N60B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 120A кількість в упаковці: 1 шт |
товар відсутній |
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| MMIX1X200N60B3H1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 520W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A кількість в упаковці: 1 шт |
товар відсутній |
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| MMIX1X340N65B4 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Kind of package: tube Power dissipation: 1.2kW Collector-emitter voltage: 650V Gate charge: 553nC Pulsed collector current: 1.2kA Type of transistor: IGBT Turn-on time: 119ns Turn-off time: 346ns Gate-emitter voltage: ±20V Collector current: 295A кількість в упаковці: 1 шт |
товар відсутній |
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| MMIX1Y100N120C3H1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 440A Turn-on time: 122ns Turn-off time: 265ns Type of transistor: IGBT Power dissipation: 400W Kind of package: tube Gate charge: 0.27µC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD кількість в упаковці: 1 шт |
товар відсутній |
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 +1 |
MMIX2F60N50P3 | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A Type of transistor: N-MOSFET x2 Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 150A Power dissipation: 320W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
|
||||||
| MMIX4B22N300 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD Case: SMPD Topology: H-bridge Mounting: SMD Power dissipation: 150W Technology: BiMOSFET™ Gate charge: 110nC Kind of package: tube Features of semiconductor devices: high voltage Collector current: 22A Collector-emitter voltage: 3kV Pulsed collector current: 165A Type of transistor: IGBT x4 Turn-on time: 743ns Turn-off time: 1.87µs Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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| MMIX4G20N250 | IXYS |
MMIX4G20N250 SMD IGBT transistors |
товар відсутній |
| MIXA60HU1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA60W1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA60WB1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA60WH1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA61H1200ED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Application: motors; photovoltaics
Power dissipation: 290W
Collector current: 60A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Application: motors; photovoltaics
Power dissipation: 290W
Collector current: 60A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA61WB1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA80R1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 390W
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 390W
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
кількість в упаковці: 1 шт
товар відсутній
| MIXA80W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 84A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 84A
кількість в упаковці: 1 шт
товар відсутній
| MIXA80W1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
кількість в упаковці: 1 шт
товар відсутній
| MIXA80W1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
товар відсутній
| MIXA80WB1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
товар відсутній
| MIXA81H1200EH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 390W
Collector current: 84A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 225A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 390W
Collector current: 84A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 225A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXA81WB1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: fans; for pump; motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: fans; for pump; motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
товар відсутній
| MIXG120W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG120W1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG180W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG180W1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG240RF1200PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MIXG240W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 233A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 233A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG240W1200PZTEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor
Case: E3-Pack
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor
Case: E3-Pack
кількість в упаковці: 1 шт
товар відсутній
| MIXG240W1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 233A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Collector current: 233A
Topology: IGBT three-phase bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG300PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Technology: X2PT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Collector current: 315A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Technology: X2PT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Collector current: 315A
кількість в упаковці: 1 шт
товар відсутній
| MIXG330PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG330PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG450PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG490PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG490PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| MIXG70W1200TED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E2-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 79A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E2-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 79A
кількість в упаковці: 1 шт
товар відсутній
| MKE38RK600DFELB |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: diode/transistor
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: diode/transistor
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
товар відсутній
| MKI50-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Topology: H-bridge; NTC thermistor
Technology: NPT
Case: E2-Pack
Application: for UPS; motors
Power dissipation: 225W
Collector current: 50A
Type of module: IGBT
Max. off-state voltage: 0.6kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Topology: H-bridge; NTC thermistor
Technology: NPT
Case: E2-Pack
Application: for UPS; motors
Power dissipation: 225W
Collector current: 50A
Type of module: IGBT
Max. off-state voltage: 0.6kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MKI50-06A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| MKI50-12F7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Topology: H-bridge
Technology: HiPerFRED™; NPT
Case: E2-Pack
Application: motors
Power dissipation: 350W
Collector current: 45A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Topology: H-bridge
Technology: HiPerFRED™; NPT
Case: E2-Pack
Application: motors
Power dissipation: 350W
Collector current: 45A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| MKI75-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| MKI75-06A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Case: E2-Pack
Pulsed collector current: 120A
Collector current: 60A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Case: E2-Pack
Pulsed collector current: 120A
Collector current: 60A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| MMIX1F132N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 330A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 330A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3433.64 грн |
| 20+ | 3248.59 грн |
| MMIX1F160N30T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3196.28 грн |
| 20+ | 3034.19 грн |
| MMIX1F210N30P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3386.73 грн |
| MMIX1F230N20T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 156A
Pulsed drain current: 630A
Power dissipation: 600W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 358nC
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 156A
Pulsed drain current: 630A
Power dissipation: 600W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 358nC
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| MMIX1F360N15T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Drain current: 235A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
On-state resistance: 4.4mΩ
Drain-source voltage: 150V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Drain current: 235A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
On-state resistance: 4.4mΩ
Drain-source voltage: 150V
кількість в упаковці: 1 шт
товар відсутній
| MMIX1F40N110P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4319.25 грн |
| MMIX1F44N100Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3884.89 грн |
| 20+ | 3635.78 грн |
| MMIX1F520N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SMPD
On-state resistance: 1.6mΩ
Kind of package: tube
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 830W
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 545nC
Reverse recovery time: 150ns
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 500A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Type of transistor: N-MOSFET
Mounting: SMD
Case: SMPD
On-state resistance: 1.6mΩ
Kind of package: tube
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 830W
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 545nC
Reverse recovery time: 150ns
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 500A
кількість в упаковці: 1 шт
товар відсутній
| MMIX1G120N120A3V1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 105A
Pulsed collector current: 700A
Turn-on time: 105ns
Turn-off time: 1365ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 420nC
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 105A
Pulsed collector current: 700A
Turn-on time: 105ns
Turn-off time: 1365ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 420nC
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
кількість в упаковці: 1 шт
товар відсутній
| MMIX1G320N60B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
товар відсутній
| MMIX1H60N150V1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
кількість в упаковці: 1 шт
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
кількість в упаковці: 1 шт
товар відсутній
| MMIX1T550N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhanced
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhanced
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3310.74 грн |
| MMIX1T600N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Power dissipation: 830W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.3mΩ
Drain current: 600A
Drain-source voltage: 40V
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Reverse recovery time: 100ns
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Case: SMPD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Power dissipation: 830W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.3mΩ
Drain current: 600A
Drain-source voltage: 40V
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Reverse recovery time: 100ns
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Case: SMPD
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2520.81 грн |
| 2+ | 2297.8 грн |
| 20+ | 2176.98 грн |
| MMIX1X100N60B3H1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 68A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92s
Turn-off time: 350ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 68A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92s
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
| MMIX1X200N60B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
кількість в упаковці: 1 шт
товар відсутній
| MMIX1X200N60B3H1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 520W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 520W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
кількість в упаковці: 1 шт
товар відсутній
| MMIX1X340N65B4 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Kind of package: tube
Power dissipation: 1.2kW
Collector-emitter voltage: 650V
Gate charge: 553nC
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Kind of package: tube
Power dissipation: 1.2kW
Collector-emitter voltage: 650V
Gate charge: 553nC
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
кількість в упаковці: 1 шт
товар відсутній
| MMIX1Y100N120C3H1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 440A
Turn-on time: 122ns
Turn-off time: 265ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 0.27µC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 440A
Turn-on time: 122ns
Turn-off time: 265ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 0.27µC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
кількість в упаковці: 1 шт
товар відсутній
| MMIX2F60N50P3 |
|
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2790.06 грн |
| 20+ | 2647 грн |
| MMIX4B22N300 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD
Case: SMPD
Topology: H-bridge
Mounting: SMD
Power dissipation: 150W
Technology: BiMOSFET™
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector current: 22A
Collector-emitter voltage: 3kV
Pulsed collector current: 165A
Type of transistor: IGBT x4
Turn-on time: 743ns
Turn-off time: 1.87µs
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD
Case: SMPD
Topology: H-bridge
Mounting: SMD
Power dissipation: 150W
Technology: BiMOSFET™
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector current: 22A
Collector-emitter voltage: 3kV
Pulsed collector current: 165A
Type of transistor: IGBT x4
Turn-on time: 743ns
Turn-off time: 1.87µs
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній