Технічний опис MMIX1F230N20T Littelfuse
Description: MOSFET N-CH 200V 168A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 168A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Інші пропозиції MMIX1F230N20T
Фото | Назва | Виробник | Інформація |
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MMIX1F230N20T | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 156A Pulsed drain current: 630A Power dissipation: 600W Case: SMPD Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 358nC Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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MMIX1F230N20T | Виробник : IXYS |
Description: MOSFET N-CH 200V 168A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
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MMIX1F230N20T | Виробник : IXYS | MOSFETs SMPD MOSFETs Power Device |
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MMIX1F230N20T | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 156A Pulsed drain current: 630A Power dissipation: 600W Case: SMPD Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 358nC Kind of channel: enhanced Reverse recovery time: 200ns |
товар відсутній |