на замовлення 7 шт:
термін постачання 521-530 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 8373.76 грн |
10+ | 7608.97 грн |
25+ | 6440.17 грн |
50+ | 6313.34 грн |
100+ | 6049.9 грн |
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Технічний опис MIXA60WB1200TEH IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 60A, Case: E3-Pack, Application: motors; photovoltaics, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Power dissipation: 290W, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MIXA60WB1200TEH
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MIXA60WB1200TEH | Виробник : Littelfuse | Trans IGBT Module N-CH 1200V 85A 290W 24-Pin Box |
товар відсутній |
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MIXA60WB1200TEH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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MIXA60WB1200TEH | Виробник : IXYS |
Description: IGBT MODULE 1200V 85A 290W E3 Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A NTC Thermistor: Yes Supplier Device Package: E3 IGBT Type: PT Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 290 W Current - Collector Cutoff (Max): 500 µA |
товар відсутній |
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MIXA60WB1200TEH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
товар відсутній |