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IPG20N06S4L26ATMA1 IPG20N06S4L26ATMA1 Infineon Technologies Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 16794 шт:
термін постачання 21-31 дні (днів)
4+78.4 грн
10+ 61.63 грн
100+ 47.91 грн
500+ 38.11 грн
1000+ 31.05 грн
2000+ 29.23 грн
Мінімальне замовлення: 4
ITS4100SSJNXUMA1 ITS4100SSJNXUMA1 Infineon Technologies Infineon-ITS4100S-SJ-N-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c9049397e2318 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 11080 шт:
термін постачання 21-31 дні (днів)
3+110.07 грн
10+ 95.68 грн
25+ 90.25 грн
100+ 72.16 грн
250+ 67.76 грн
500+ 59.29 грн
1000+ 48.32 грн
Мінімальне замовлення: 3
ITS4200SMENHUMA1 ITS4200SMENHUMA1 Infineon Technologies Infineon-ITS4200S_ME_N_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013ee841573f&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2339 шт:
термін постачання 21-31 дні (днів)
3+125.9 грн
10+ 108.67 грн
25+ 102.5 грн
100+ 81.96 грн
250+ 76.96 грн
500+ 67.34 грн
1000+ 54.88 грн
Мінімальне замовлення: 3
ITS4200SMEOHUMA1 ITS4200SMEOHUMA1 Infineon Technologies Infineon-ITS4200S_ME_O_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013fb7455740&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 30335 шт:
термін постачання 21-31 дні (днів)
3+124.39 грн
10+ 107.37 грн
25+ 101.28 грн
100+ 80.96 грн
250+ 76.02 грн
500+ 66.52 грн
1000+ 54.21 грн
Мінімальне замовлення: 3
ITS4200SMEPHUMA1 ITS4200SMEPHUMA1 Infineon Technologies Infineon-ITS4200S_ME_P_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a0140684a5741&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 11141 шт:
термін постачання 21-31 дні (днів)
3+128.16 грн
10+ 110.49 грн
25+ 104.22 грн
100+ 83.33 грн
250+ 78.24 грн
500+ 68.46 грн
1000+ 55.8 грн
Мінімальне замовлення: 3
ITS4200SSJDXUMA1 ITS4200SSJDXUMA1 Infineon Technologies Infineon-ITS4200S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c90492f772315 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 3959 шт:
термін постачання 21-31 дні (днів)
3+110.07 грн
10+ 94.95 грн
25+ 90.13 грн
100+ 69.48 грн
250+ 64.95 грн
500+ 57.4 грн
1000+ 44.57 грн
Мінімальне замовлення: 3
ITS4300SSJDXUMA1 ITS4300SSJDXUMA1 Infineon Technologies Infineon-ITS4300S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c904925722312 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 300mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 31792 шт:
термін постачання 21-31 дні (днів)
4+93.48 грн
10+ 80.58 грн
25+ 76.46 грн
100+ 58.94 грн
250+ 55.1 грн
500+ 48.69 грн
1000+ 37.81 грн
Мінімальне замовлення: 4
KP229E3111XTMA1 KP229E3111XTMA1 Infineon Technologies Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19 Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
KP254XTMA1 KP254XTMA1 Infineon Technologies Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b Description: SENSOR 16.68PSIA 10BIT
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: SPI
Mounting Type: Surface Mount
Output: 10 b
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.44PSI (±3kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3.3V, 5V
Applications: Board Mount
Port Style: No Port
Part Status: Obsolete
товар відсутній
SN7002WH6327XTSA1 SN7002WH6327XTSA1 Infineon Technologies Infineon-SN7002W-DS-v02_05-en.pdf?fileId=db3a3043344adb9d0134569a59ab6195 Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
на замовлення 117046 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
16+ 18.29 грн
100+ 8.9 грн
500+ 6.97 грн
1000+ 4.84 грн
Мінімальне замовлення: 12
TLE49611MXTSA1 TLE49611MXTSA1 Infineon Technologies Infineon-TLE4961_1M-DS-v01_00-en.pdf?fileId=db3a304338e5bb6e0138e7c1d93c0261 Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLE49663KHTSA1 TLE49663KHTSA1 Infineon Technologies Infineon-TLE4966_3K-DS-v01_00-en.pdf?fileId=db3a30432b57a660012ba0adf1880bb7 Description: MAG SWITCH SPEC PURP TSOP-6-6
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Mounting Type: Surface Mount
Function: Special Purpose
Voltage - Supply: 2.7V ~ 24V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6321 шт:
термін постачання 21-31 дні (днів)
5+70.86 грн
10+ 52.49 грн
25+ 45.21 грн
50+ 40.93 грн
100+ 34.86 грн
500+ 30.31 грн
1000+ 26.09 грн
Мінімальне замовлення: 5
TLE5012BE1000XUMA1 TLE5012BE1000XUMA1 Infineon Technologies Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 72723 шт:
термін постачання 21-31 дні (днів)
1+388.24 грн
10+ 280.65 грн
25+ 249.47 грн
50+ 222.41 грн
100+ 216.56 грн
500+ 181.44 грн
1000+ 166.95 грн
TLI4970D025T4XUMA1 TLI4970D025T4XUMA1 Infineon Technologies TLI4970_D025T4_Rev1.2_3-21-19.pdf Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±2%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
товар відсутній
TLI4970D025T5XUMA1 TLI4970D025T5XUMA1 Infineon Technologies TLI4970_D025T5_Rev1.2_3-21-19.pdf Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±3.5%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
товар відсутній
BSS169H6327XTSA1 BSS169H6327XTSA1 Infineon Technologies Infineon-BSS169-DS-v01_08-en.pdf?fileId=db3a304330f68606013108f39406004c Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
на замовлення 70570 шт:
термін постачання 21-31 дні (днів)
11+27.89 грн
13+ 23.38 грн
100+ 16.23 грн
500+ 11.89 грн
1000+ 9.67 грн
Мінімальне замовлення: 11
KP215F1701XTMA1 KP215F1701XTMA1 Infineon Technologies Infineon-KP215F1701-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af6a900a30b34 Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
товар відсутній
KP236XTMA1 KP236XTMA1 Infineon Technologies Infineon-KP236-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af67dbdc20b14 Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5266 шт:
термін постачання 21-31 дні (днів)
1+346.78 грн
10+ 250.38 грн
25+ 222.58 грн
50+ 198.44 грн
100+ 193.22 грн
500+ 183.88 грн
KP229E3111XTMA1 KP229E3111XTMA1 Infineon Technologies Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19 Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
TLV49611TBXALA1 TLV49611TBXALA1 Infineon Technologies Infineon-Infineon-TLV4961-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3a726e0b89 Description: MAGNETIC SWITCH LATCH TO92
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLV49645TBXALA1 TLV49645TBXALA1 Infineon Technologies INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
2N7002H6327XTSA2 2N7002H6327XTSA2 Infineon Technologies Infineon-2N7002-DS-v02_04-en.pdf?fileId=db3a304319bc939a0119c2a9461e79e6 Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
3000+3.39 грн
6000+ 3.03 грн
9000+ 2.51 грн
30000+ 2.31 грн
75000+ 2.08 грн
Мінімальне замовлення: 3000
BFR840L3RHESDE6327XTSA1 BFR840L3RHESDE6327XTSA1 Infineon Technologies Infineon-BFR840L3RHESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389709cd4ece Description: RF TRANS NPN 2.6V 75GHZ TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
товар відсутній
BSC0911NDATMA1 BSC0911NDATMA1 Infineon Technologies Infineon-BSC0911ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceebf62c4946 Description: MOSFET 2N-CH 25V 18A/30A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 18A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+66.28 грн
Мінімальне замовлення: 5000
BSP125H6327XTSA1 BSP125H6327XTSA1 Infineon Technologies Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
1000+24.45 грн
2000+ 20.97 грн
5000+ 19.86 грн
10000+ 17.26 грн
25000+ 17.09 грн
Мінімальне замовлення: 1000
BSP129H6327XTSA1 BSP129H6327XTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
1000+25.61 грн
Мінімальне замовлення: 1000
BSP135H6327XTSA1 BSP135H6327XTSA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
1000+40.62 грн
2000+ 36.83 грн
5000+ 35.07 грн
10000+ 31.4 грн
Мінімальне замовлення: 1000
BSP149H6327XTSA1 BSP149H6327XTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
1000+38.39 грн
2000+ 34.8 грн
5000+ 33.14 грн
10000+ 29.67 грн
Мінімальне замовлення: 1000
BSP149H6906XTSA1 BSP149H6906XTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
товар відсутній
BSP170PH6327XTSA1 BSP170PH6327XTSA1 Infineon Technologies Infineon-BSP170P-DS-v02_53-en.pdf?fileId=db3a30433b47825b013b5fdad470576f Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
1000+27.16 грн
2000+ 23.3 грн
5000+ 22.07 грн
10000+ 19.18 грн
Мінімальне замовлення: 1000
BSP171PH6327XTSA1 BSP171PH6327XTSA1 Infineon Technologies Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+26.39 грн
2000+ 22.63 грн
Мінімальне замовлення: 1000
BSP295H6327XTSA1 BSP295H6327XTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+28.05 грн
Мінімальне замовлення: 1000
BSP297H6327XTSA1 BSP297H6327XTSA1 Infineon Technologies Infineon-BSP297-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b51250a8528c2 Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
1000+26.23 грн
2000+ 22.5 грн
5000+ 21.31 грн
10000+ 18.52 грн
Мінімальне замовлення: 1000
BSP298H6327XUSA1 BSP298H6327XUSA1 Infineon Technologies Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29 Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP300H6327XUSA1 BSP300H6327XUSA1 Infineon Technologies Infineon-BSP300-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c980bd0110d Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товар відсутній
BSP315PH6327XTSA1 BSP315PH6327XTSA1 Infineon Technologies Infineon-BSP315P-DS-v01_07-en.pdf?fileId=db3a30433b47825b013b6015cc1558b9 Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)
1000+24.98 грн
2000+ 21.42 грн
5000+ 20.3 грн
10000+ 17.64 грн
25000+ 17.46 грн
Мінімальне замовлення: 1000
BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2 Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
1000+24.83 грн
2000+ 21.3 грн
5000+ 20.18 грн
10000+ 17.53 грн
25000+ 17.36 грн
Мінімальне замовлення: 1000
BSP317PH6327XTSA1 BSP317PH6327XTSA1 Infineon Technologies Infineon-BSP317P-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b604df1d959f2 Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+24.94 грн
2000+ 21.39 грн
Мінімальне замовлення: 1000
BSP322PH6327XTSA1 BSP322PH6327XTSA1 Infineon Technologies Infineon-BSP322P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b60a022246d9c Description: MOSFET P-CH 100V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+27.66 грн
2000+ 23.72 грн
Мінімальне замовлення: 1000
BSP324H6327XTSA1 BSP324H6327XTSA1 Infineon Technologies Infineon-BSP324-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c38c51e0fe9 Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+22.43 грн
2000+ 19.23 грн
Мінімальне замовлення: 1000
BSP613PH6327XTSA1 BSP613PH6327XTSA1 Infineon Technologies Infineon-BSP613P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b60ac86a96dc0 Description: MOSFET P-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
1000+37.71 грн
2000+ 34.19 грн
5000+ 32.56 грн
Мінімальне замовлення: 1000
BSS119NH6327XTSA1 BSS119NH6327XTSA1 Infineon Technologies Infineon-BSS119N-DS-v02_01-en.pdf?fileId=db3a304335f1f4b6013639b6532a164a Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+6.77 грн
6000+ 6.24 грн
9000+ 5.62 грн
30000+ 5.2 грн
Мінімальне замовлення: 3000
BSS123NH6327XTSA1 BSS123NH6327XTSA1 Infineon Technologies Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
на замовлення 177000 шт:
термін постачання 21-31 дні (днів)
3000+4.68 грн
6000+ 4.31 грн
9000+ 3.73 грн
30000+ 3.43 грн
75000+ 2.84 грн
150000+ 2.8 грн
Мінімальне замовлення: 3000
BSS123NH6433XTMA1 BSS123NH6433XTMA1 Infineon Technologies Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
на замовлення 220000 шт:
термін постачання 21-31 дні (днів)
10000+3.93 грн
30000+ 3.71 грн
50000+ 3.08 грн
Мінімальне замовлення: 10000
BSS138WH6327XTSA1 BSS138WH6327XTSA1 Infineon Technologies Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
3000+4.63 грн
6000+ 4.26 грн
9000+ 3.69 грн
30000+ 3.39 грн
75000+ 2.81 грн
Мінімальне замовлення: 3000
BSS192PH6327FTSA1 BSS192PH6327FTSA1 Infineon Technologies Infineon-BSS192P-DS-v01_07-en.pdf?fileId=db3a304342e8be2c014300e20296154c Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
товар відсутній
BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 Infineon Technologies Infineon-BSS209PW-DS-v01_32-en.pdf?fileId=db3a3043321e499401324806c439244b Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
3000+4.53 грн
6000+ 4.05 грн
9000+ 3.36 грн
30000+ 3.1 грн
Мінімальне замовлення: 3000
BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 Infineon Technologies Infineon-BSS223PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132481523b6245f Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
3000+4.12 грн
6000+ 3.79 грн
9000+ 3.28 грн
30000+ 3.02 грн
75000+ 2.5 грн
Мінімальне замовлення: 3000
BSS225H6327FTSA1 BSS225H6327FTSA1 Infineon Technologies Infineon--DS-v01_28-EN.pdf?fileId=db3a30433b47825b013b60c128d06dfa Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+17.07 грн
2000+ 14.64 грн
Мінімальне замовлення: 1000
BSS84PH6433XTMA1 BSS84PH6433XTMA1 Infineon Technologies Infineon-BSS84P-DS-v02_07-en.pdf?fileId=db3a304330f68606013118ac7a9b4549 Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
товар відсутній
BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 Infineon Technologies Infineon-BSS84PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132482056d32474 Description: MOSFET P-CH 60V 150MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19.1 pF @ 25 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+4.28 грн
6000+ 3.83 грн
9000+ 3.17 грн
Мінімальне замовлення: 3000
BTS50901EJAXUMA1 BTS50901EJAXUMA1 Infineon Technologies Infineon-BTS5090-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa410fc371059 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+52.61 грн
Мінімальне замовлення: 2500
BTT60502EKAXUMA1 BTT60502EKAXUMA1 Infineon Technologies BTT6020_30_50-1EKA_PB.PDF?fileId=db3a3043405f2978014062e697d128ec Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
IPB120P04P4L03ATMA1 IPB120P04P4L03ATMA1 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f&ack=t Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товар відсутній
IPB160N04S4H1ATMA1 IPB160N04S4H1ATMA1 Infineon Technologies Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V
товар відсутній
IPB64N25S320ATMA1 IPB64N25S320ATMA1 Infineon Technologies Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t Description: MOSFET N-CH 250V 64A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+234.56 грн
2000+ 212.68 грн
Мінімальне замовлення: 1000
IPD65R225C7ATMA1 IPD65R225C7ATMA1 Infineon Technologies Infineon-IPD65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e793234000141 Description: MOSFET N-CH 650V 11A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товар відсутній
IPD90P04P405ATMA1 IPD90P04P405ATMA1 Infineon Technologies Infineon-IPD90P04P4_05-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79&ack=t Description: MOSFET P-CH 40V 90A TO252-3
товар відсутній
IPD90P04P4L04ATMA1 IPD90P04P4L04ATMA1 Infineon Technologies Infineon-IPD90P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7829059b2dee&ack=t Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
товар відсутній
IPG20N04S408ATMA1 IPG20N04S408ATMA1 Infineon Technologies Infineon-IPG20N04S4_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf5de5da6bfb&ack=t Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+47.98 грн
Мінімальне замовлення: 5000
IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
IPG20N06S4L26ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 16794 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+78.4 грн
10+ 61.63 грн
100+ 47.91 грн
500+ 38.11 грн
1000+ 31.05 грн
2000+ 29.23 грн
Мінімальне замовлення: 4
ITS4100SSJNXUMA1 Infineon-ITS4100S-SJ-N-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c9049397e2318
ITS4100SSJNXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 11080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+110.07 грн
10+ 95.68 грн
25+ 90.25 грн
100+ 72.16 грн
250+ 67.76 грн
500+ 59.29 грн
1000+ 48.32 грн
Мінімальне замовлення: 3
ITS4200SMENHUMA1 Infineon-ITS4200S_ME_N_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013ee841573f&ack=t
ITS4200SMENHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+125.9 грн
10+ 108.67 грн
25+ 102.5 грн
100+ 81.96 грн
250+ 76.96 грн
500+ 67.34 грн
1000+ 54.88 грн
Мінімальне замовлення: 3
ITS4200SMEOHUMA1 Infineon-ITS4200S_ME_O_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013fb7455740&ack=t
ITS4200SMEOHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 30335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+124.39 грн
10+ 107.37 грн
25+ 101.28 грн
100+ 80.96 грн
250+ 76.02 грн
500+ 66.52 грн
1000+ 54.21 грн
Мінімальне замовлення: 3
ITS4200SMEPHUMA1 Infineon-ITS4200S_ME_P_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a0140684a5741&ack=t
ITS4200SMEPHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 11141 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+128.16 грн
10+ 110.49 грн
25+ 104.22 грн
100+ 83.33 грн
250+ 78.24 грн
500+ 68.46 грн
1000+ 55.8 грн
Мінімальне замовлення: 3
ITS4200SSJDXUMA1 Infineon-ITS4200S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c90492f772315
ITS4200SSJDXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 3959 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+110.07 грн
10+ 94.95 грн
25+ 90.13 грн
100+ 69.48 грн
250+ 64.95 грн
500+ 57.4 грн
1000+ 44.57 грн
Мінімальне замовлення: 3
ITS4300SSJDXUMA1 Infineon-ITS4300S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c904925722312
ITS4300SSJDXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 300mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 31792 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+93.48 грн
10+ 80.58 грн
25+ 76.46 грн
100+ 58.94 грн
250+ 55.1 грн
500+ 48.69 грн
1000+ 37.81 грн
Мінімальне замовлення: 4
KP229E3111XTMA1 Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19
KP229E3111XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
KP254XTMA1 Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b
KP254XTMA1
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 10BIT
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: SPI
Mounting Type: Surface Mount
Output: 10 b
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.44PSI (±3kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3.3V, 5V
Applications: Board Mount
Port Style: No Port
Part Status: Obsolete
товар відсутній
SN7002WH6327XTSA1 Infineon-SN7002W-DS-v02_05-en.pdf?fileId=db3a3043344adb9d0134569a59ab6195
SN7002WH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
на замовлення 117046 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
16+ 18.29 грн
100+ 8.9 грн
500+ 6.97 грн
1000+ 4.84 грн
Мінімальне замовлення: 12
TLE49611MXTSA1 Infineon-TLE4961_1M-DS-v01_00-en.pdf?fileId=db3a304338e5bb6e0138e7c1d93c0261
TLE49611MXTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLE49663KHTSA1 Infineon-TLE4966_3K-DS-v01_00-en.pdf?fileId=db3a30432b57a660012ba0adf1880bb7
TLE49663KHTSA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP TSOP-6-6
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Mounting Type: Surface Mount
Function: Special Purpose
Voltage - Supply: 2.7V ~ 24V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6321 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+70.86 грн
10+ 52.49 грн
25+ 45.21 грн
50+ 40.93 грн
100+ 34.86 грн
500+ 30.31 грн
1000+ 26.09 грн
Мінімальне замовлення: 5
TLE5012BE1000XUMA1 Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f
TLE5012BE1000XUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 72723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+388.24 грн
10+ 280.65 грн
25+ 249.47 грн
50+ 222.41 грн
100+ 216.56 грн
500+ 181.44 грн
1000+ 166.95 грн
TLI4970D025T4XUMA1 TLI4970_D025T4_Rev1.2_3-21-19.pdf
TLI4970D025T4XUMA1
Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±2%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
товар відсутній
TLI4970D025T5XUMA1 TLI4970_D025T5_Rev1.2_3-21-19.pdf
TLI4970D025T5XUMA1
Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±3.5%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
товар відсутній
BSS169H6327XTSA1 Infineon-BSS169-DS-v01_08-en.pdf?fileId=db3a304330f68606013108f39406004c
BSS169H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
на замовлення 70570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.89 грн
13+ 23.38 грн
100+ 16.23 грн
500+ 11.89 грн
1000+ 9.67 грн
Мінімальне замовлення: 11
KP215F1701XTMA1 Infineon-KP215F1701-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af6a900a30b34
KP215F1701XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
товар відсутній
KP236XTMA1 Infineon-KP236-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af67dbdc20b14
KP236XTMA1
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5266 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+346.78 грн
10+ 250.38 грн
25+ 222.58 грн
50+ 198.44 грн
100+ 193.22 грн
500+ 183.88 грн
KP229E3111XTMA1 Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19
KP229E3111XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
TLV49611TBXALA1 Infineon-Infineon-TLV4961-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3a726e0b89
TLV49611TBXALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TO92
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLV49645TBXALA1 INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw
TLV49645TBXALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
2N7002H6327XTSA2 Infineon-2N7002-DS-v02_04-en.pdf?fileId=db3a304319bc939a0119c2a9461e79e6
2N7002H6327XTSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.39 грн
6000+ 3.03 грн
9000+ 2.51 грн
30000+ 2.31 грн
75000+ 2.08 грн
Мінімальне замовлення: 3000
BFR840L3RHESDE6327XTSA1 Infineon-BFR840L3RHESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389709cd4ece
BFR840L3RHESDE6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V 75GHZ TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
товар відсутній
BSC0911NDATMA1 Infineon-BSC0911ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceebf62c4946
BSC0911NDATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 18A/30A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 18A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+66.28 грн
Мінімальне замовлення: 5000
BSP125H6327XTSA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
BSP125H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+24.45 грн
2000+ 20.97 грн
5000+ 19.86 грн
10000+ 17.26 грн
25000+ 17.09 грн
Мінімальне замовлення: 1000
BSP129H6327XTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+25.61 грн
Мінімальне замовлення: 1000
BSP135H6327XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+40.62 грн
2000+ 36.83 грн
5000+ 35.07 грн
10000+ 31.4 грн
Мінімальне замовлення: 1000
BSP149H6327XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+38.39 грн
2000+ 34.8 грн
5000+ 33.14 грн
10000+ 29.67 грн
Мінімальне замовлення: 1000
BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
товар відсутній
BSP170PH6327XTSA1 Infineon-BSP170P-DS-v02_53-en.pdf?fileId=db3a30433b47825b013b5fdad470576f
BSP170PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+27.16 грн
2000+ 23.3 грн
5000+ 22.07 грн
10000+ 19.18 грн
Мінімальне замовлення: 1000
BSP171PH6327XTSA1 Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa
BSP171PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+26.39 грн
2000+ 22.63 грн
Мінімальне замовлення: 1000
BSP295H6327XTSA1 Infineon-BSP295-DS-v02_03-en.pdf?fileId=db3a30433b47825b013b5fc5eed1573f
BSP295H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+28.05 грн
Мінімальне замовлення: 1000
BSP297H6327XTSA1 Infineon-BSP297-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b51250a8528c2
BSP297H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+26.23 грн
2000+ 22.5 грн
5000+ 21.31 грн
10000+ 18.52 грн
Мінімальне замовлення: 1000
BSP298H6327XUSA1 Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29
BSP298H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP300H6327XUSA1 Infineon-BSP300-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c980bd0110d
BSP300H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товар відсутній
BSP315PH6327XTSA1 Infineon-BSP315P-DS-v01_07-en.pdf?fileId=db3a30433b47825b013b6015cc1558b9
BSP315PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+24.98 грн
2000+ 21.42 грн
5000+ 20.3 грн
10000+ 17.64 грн
25000+ 17.46 грн
Мінімальне замовлення: 1000
BSP316PH6327XTSA1 Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2
BSP316PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+24.83 грн
2000+ 21.3 грн
5000+ 20.18 грн
10000+ 17.53 грн
25000+ 17.36 грн
Мінімальне замовлення: 1000
BSP317PH6327XTSA1 Infineon-BSP317P-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b604df1d959f2
BSP317PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+24.94 грн
2000+ 21.39 грн
Мінімальне замовлення: 1000
BSP322PH6327XTSA1 Infineon-BSP322P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b60a022246d9c
BSP322PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+27.66 грн
2000+ 23.72 грн
Мінімальне замовлення: 1000
BSP324H6327XTSA1 Infineon-BSP324-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c38c51e0fe9
BSP324H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+22.43 грн
2000+ 19.23 грн
Мінімальне замовлення: 1000
BSP613PH6327XTSA1 Infineon-BSP613P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b60ac86a96dc0
BSP613PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+37.71 грн
2000+ 34.19 грн
5000+ 32.56 грн
Мінімальне замовлення: 1000
BSS119NH6327XTSA1 Infineon-BSS119N-DS-v02_01-en.pdf?fileId=db3a304335f1f4b6013639b6532a164a
BSS119NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.77 грн
6000+ 6.24 грн
9000+ 5.62 грн
30000+ 5.2 грн
Мінімальне замовлення: 3000
BSS123NH6327XTSA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
на замовлення 177000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.68 грн
6000+ 4.31 грн
9000+ 3.73 грн
30000+ 3.43 грн
75000+ 2.84 грн
150000+ 2.8 грн
Мінімальне замовлення: 3000
BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
на замовлення 220000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+3.93 грн
30000+ 3.71 грн
50000+ 3.08 грн
Мінімальне замовлення: 10000
BSS138WH6327XTSA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.63 грн
6000+ 4.26 грн
9000+ 3.69 грн
30000+ 3.39 грн
75000+ 2.81 грн
Мінімальне замовлення: 3000
BSS192PH6327FTSA1 Infineon-BSS192P-DS-v01_07-en.pdf?fileId=db3a304342e8be2c014300e20296154c
BSS192PH6327FTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SOT89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
товар відсутній
BSS209PWH6327XTSA1 Infineon-BSS209PW-DS-v01_32-en.pdf?fileId=db3a3043321e499401324806c439244b
BSS209PWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.53 грн
6000+ 4.05 грн
9000+ 3.36 грн
30000+ 3.1 грн
Мінімальне замовлення: 3000
BSS223PWH6327XTSA1 Infineon-BSS223PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132481523b6245f
BSS223PWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.12 грн
6000+ 3.79 грн
9000+ 3.28 грн
30000+ 3.02 грн
75000+ 2.5 грн
Мінімальне замовлення: 3000
BSS225H6327FTSA1 Infineon--DS-v01_28-EN.pdf?fileId=db3a30433b47825b013b60c128d06dfa
BSS225H6327FTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+17.07 грн
2000+ 14.64 грн
Мінімальне замовлення: 1000
BSS84PH6433XTMA1 Infineon-BSS84P-DS-v02_07-en.pdf?fileId=db3a304330f68606013118ac7a9b4549
BSS84PH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
товар відсутній
BSS84PWH6327XTSA1 Infineon-BSS84PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132482056d32474
BSS84PWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 150MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19.1 pF @ 25 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.28 грн
6000+ 3.83 грн
9000+ 3.17 грн
Мінімальне замовлення: 3000
BTS50901EJAXUMA1 Infineon-BTS5090-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa410fc371059
BTS50901EJAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+52.61 грн
Мінімальне замовлення: 2500
BTT60502EKAXUMA1 BTT6020_30_50-1EKA_PB.PDF?fileId=db3a3043405f2978014062e697d128ec
BTT60502EKAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
IPB120P04P4L03ATMA1 Infineon-IPP_B_I120P04P4L_03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f&ack=t
IPB120P04P4L03ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
товар відсутній
IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
IPB160N04S4H1ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V
товар відсутній
IPB64N25S320ATMA1 Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t
IPB64N25S320ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 64A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+234.56 грн
2000+ 212.68 грн
Мінімальне замовлення: 1000
IPD65R225C7ATMA1 Infineon-IPD65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e793234000141
IPD65R225C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товар відсутній
IPD90P04P405ATMA1 Infineon-IPD90P04P4_05-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79&ack=t
IPD90P04P405ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
товар відсутній
IPD90P04P4L04ATMA1 Infineon-IPD90P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7829059b2dee&ack=t
IPD90P04P4L04ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
товар відсутній
IPG20N04S408ATMA1 Infineon-IPG20N04S4_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf5de5da6bfb&ack=t
IPG20N04S408ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+47.98 грн
Мінімальне замовлення: 5000
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