IPD90P04P4L04ATMA1 Infineon Technologies
на замовлення 16039 шт:
термін постачання 884-893 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.32 грн |
| 10+ | 181.86 грн |
| 100+ | 133.54 грн |
| 250+ | 122.3 грн |
| 500+ | 111.05 грн |
| 1000+ | 99.1 грн |
| 2500+ | 94.18 грн |
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Технічний опис IPD90P04P4L04ATMA1 Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V.
Інші пропозиції IPD90P04P4L04ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPD90P04P4L04ATMA1 | Виробник : Infineon Technologies |
 Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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IPD90P04P4L04ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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IPD90P04P4L04ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET P-CH 40V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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IPD90P04P4L04ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 40V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V |
товар відсутній |
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IPD90P04P4L04ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 40V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V |
товар відсутній |