| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SG333R00JR18 | VISHAY |
 Category: Power resistorsDescription: Resistor: wire-wound; THT; 33Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C; axial Type of resistor: wire-wound Mounting: THT Resistance: 33Ω Tolerance: ±5% Power: 3W Operating temperature: -55...250°C Max. operating voltage: 100V Resistor features: non-flammable Body dimensions: Ø4.8x13mm Temperature coefficient: 150ppm/°C Leads dimensions: Ø0.8x25mm Leads: axial кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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SG347R00JR18 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 47Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C; axial Type of resistor: wire-wound Mounting: THT Resistance: 47Ω Power: 3W Tolerance: ±5% Max. operating voltage: 100V Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Operating temperature: -55...250°C Resistor features: non-flammable Temperature coefficient: 150ppm/°C Leads: axial кількість в упаковці: 1 шт |
на замовлення 463 шт: термін постачання 14-21 дні (днів) |
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SG34R700JR18 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 4.7Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C Type of resistor: wire-wound Mounting: THT Resistance: 4.7Ω Power: 3W Tolerance: ±5% Max. operating voltage: 100V Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Operating temperature: -55...250°C Resistor features: non-flammable Temperature coefficient: 150ppm/°C Leads: axial кількість в упаковці: 1 шт |
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SGL41-20-E3/96 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB; GL41; MELF plastic Mounting: SMD Kind of package: reel; tape Load current: 1A Max. forward voltage: 0.5V кількість в упаковці: 1 шт |
на замовлення 1478 шт: термін постачання 14-21 дні (днів) |
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| SGL41-30-E3/96 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB Mounting: SMD Kind of package: reel; tape Load current: 1A Max. forward voltage: 0.5V кількість в упаковці: 1 шт |
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SGL41-40-E3/96 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB; GL41; MELF plastic Mounting: SMD Kind of package: reel; tape Load current: 1A Max. forward voltage: 0.5V кількість в упаковці: 1 шт |
на замовлення 1660 шт: термін постачання 14-21 дні (днів) |
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SGL41-50-E3/96 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO213AB; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB Mounting: SMD Kind of package: reel; tape Load current: 1A Max. forward voltage: 0.7V кількість в упаковці: 1 шт |
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SGL41-60-E3/96 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB; GL41; MELF plastic Mounting: SMD Kind of package: reel; tape Load current: 1A Max. forward voltage: 0.7V кількість в упаковці: 1 шт |
на замовлення 589 шт: термін постачання 14-21 дні (днів) |
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SI1012CR-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.63A; Idm: 2A; 0.15W; SC75A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.63A Pulsed drain current: 2A Power dissipation: 0.15W Case: SC75A Gate-source voltage: ±8V On-state resistance: 396mΩ Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 3540 шт: термін постачання 14-21 дні (днів) |
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SI1012R-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC75A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 80mW Case: SC75A Gate-source voltage: ±6V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2548 шт: термін постачання 14-21 дні (днів) |
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| SI1012X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC89,SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 80mW Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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SI1013CX-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -450mA; 190mW Case: SC89 Drain-source voltage: -20V Drain current: -450mA On-state resistance: 1.5Ω Type of transistor: P-MOSFET Power dissipation: 0.19W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1.5A Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 2965 шт: термін постачання 14-21 дні (днів) |
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| SI1013R-T1-GE3 | VISHAY |
SI1013R-T1-GE3 SMD P channel transistors |
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SI1013X-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -400mA; Idm: -1A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -400mA Pulsed drain current: -1A Power dissipation: 0.275W Case: SC89 Gate-source voltage: ±6V On-state resistance: 2.7Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI1016CX-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.49/-0.49A Pulsed drain current: 2A Power dissipation: 0.14W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 396/756mΩ Mounting: SMD Gate charge: 2/2.5nC Kind of package: reel; tape Kind of channel: enhanced Version: ESD кількість в упаковці: 1 шт |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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| SI1016X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 515/-390mA Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 2.7/1.25Ω Mounting: SMD Gate charge: 1.5/0.75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SI1021R-T1-GE3 | VISHAY | SI1021R-T1-GE3 SMD P channel transistors |
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SI1022R-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; 0.13W; SC75A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 0.13W Features of semiconductor devices: ESD protected gate Gate charge: 0.6nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SC75A Drain-source voltage: 60V Drain current: 0.24A On-state resistance: 1.25Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 3011 шт: термін постачання 14-21 дні (днів) |
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| SI1023CX-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -450mA; 220mW Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.45A Pulsed drain current: -1.5A Power dissipation: 0.22W Case: SC89 Gate-source voltage: ±8V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SI1023X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -390mA Pulsed drain current: -0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 2.7Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SI1024X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 515mA Pulsed drain current: 0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SI1025X-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.19A; Idm: -0.65A; 0.13W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.19A Pulsed drain current: -0.65A Power dissipation: 0.13W Case: SC89; SOT563 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| SI1026X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.13W Case: SC89; SOT563 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SI1029X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22/-0.135A Pulsed drain current: 0.65A Power dissipation: 0.13W Case: SC89 Gate-source voltage: ±20V On-state resistance: 3/8Ω Mounting: SMD Gate charge: 0.75/1.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SI1031R-T1-GE3 | VISHAY |
SI1031R-T1-GE3 SMD P channel transistors |
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| SI1032R-T1-GE3 | VISHAY |
SI1032R-T1-GE3 SMD N channel transistors |
на замовлення 2969 шт: термін постачання 14-21 дні (днів) |
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| SI1032X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.21A Pulsed drain current: 0.6A Power dissipation: 0.34W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SI1034CX-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.49A Power dissipation: 0.14W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 396mΩ Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SI1034X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.19A Pulsed drain current: 0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±5V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI1036X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 610mA Pulsed drain current: 2A Power dissipation: 0.22W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 1.1Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1977 шт: термін постачання 14-21 дні (днів) |
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| SI1040X-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.43A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC89-6 On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 1.8...8V DC кількість в упаковці: 1 шт |
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| SI1050X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 1.34A Pulsed drain current: 6A Power dissipation: 236mW Case: SC89; SOT563 Gate-source voltage: ±5V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI1062X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.53A Pulsed drain current: 2A Power dissipation: 0.22W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 762mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 5896 шт: термін постачання 14-21 дні (днів) |
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| SI1070X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 236mW Case: SC89; SOT563 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI1077X-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.75A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.75A Pulsed drain current: -8A Power dissipation: 0.33W Case: SC89 Gate-source voltage: ±8V On-state resistance: 188mΩ Mounting: SMD Gate charge: 31.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| Si1078X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.02A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.02A Pulsed drain current: 6A Power dissipation: 0.24W Case: SC89; SOT563 Gate-source voltage: ±12V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SI1079X-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -1.44A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.44A Pulsed drain current: -8A Power dissipation: 0.33W Case: SC89 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI1302DL-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.6A; Idm: 1.5A; 0.18W; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 1.5A Power dissipation: 0.18W Case: SC70 Gate-source voltage: ±20V On-state resistance: 480mΩ Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI1302DL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; 0.18W; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.48A Power dissipation: 0.18W Case: SC70 Gate-source voltage: ±20V On-state resistance: 480mΩ Mounting: SMD Gate charge: 0.86nC Kind of package: reel; tape Kind of channel: enhanced |
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SI1308EDL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; SC70 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.4A On-state resistance: 132mΩ Type of transistor: N-MOSFET Power dissipation: 0.3W Features of semiconductor devices: ESD protected gate Gate charge: 4.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 6A Case: SC70 кількість в упаковці: 1 шт |
на замовлення 2646 шт: термін постачання 14-21 дні (днів) |
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| SI1317DL-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.4A; Idm: -6A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -6A Power dissipation: 0.5W Case: SC70; SOT323 Gate-source voltage: ±8V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI1317DL-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.3W; SC70 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -1.4A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 6.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -6A Mounting: SMD Case: SC70 кількість в упаковці: 1 шт |
на замовлення 2920 шт: термін постачання 14-21 дні (днів) |
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| SI1330EDL-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI1330EDL-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70 Case: SC70 Mounting: SMD Gate charge: 0.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 0.19A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 2.5Ω Power dissipation: 0.18W кількість в упаковці: 1 шт |
товар відсутній |
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| SI1330EDL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Case: SC70; SOT323 Mounting: SMD Gate charge: 0.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 8Ω Pulsed drain current: 1A Power dissipation: 0.31W кількість в упаковці: 3000 шт |
товар відсутній |
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| SI1401EDH-T1-GE3 | VISHAY |
SI1401EDH-T1-GE3 SMD P channel transistors |
товар відсутній |
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| SI1403BDL-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A Mounting: SMD Power dissipation: 0.625W Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 265mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5A Case: SC70; SOT323 кількість в упаковці: 3000 шт |
товар відсутній |
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SI1403BDL-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A Mounting: SMD Power dissipation: 0.625W Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 265mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5A Case: SC70; SOT323 кількість в упаковці: 3000 шт |
товар відсутній |
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| SI1403CDL-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.6W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Power dissipation: 0.6W Case: SC70-6 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SI1411DH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -0.38A; 0.81W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -0.38A Power dissipation: 0.81W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SI1416EDH-T1-GE3 | VISHAY |
SI1416EDH-T1-GE3 SMD N channel transistors |
товар відсутній |
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SI1424EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70 Drain-source voltage: 20V Drain current: 4A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SC70 кількість в упаковці: 1 шт |
товар відсутній |
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SI1427EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.8W Case: SC70 Gate-source voltage: ±8V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
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SI1428EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V кількість в упаковці: 1 шт |
товар відсутній |
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| SI1441EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -25A Case: SC70-6; SOT363 Drain-source voltage: -20V Drain current: -4A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -25A Mounting: SMD кількість в упаковці: 3000 шт |
товар відсутній |
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SI1442DH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W Polarisation: unipolar Drain-source voltage: 12V Drain current: 4A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Case: SC70-6; SOT363 Kind of package: reel; tape Gate charge: 33nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±8V Pulsed drain current: 20A кількість в упаковці: 1 шт |
на замовлення 2861 шт: термін постачання 14-21 дні (днів) |
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SI1443EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; SC70 Mounting: SMD Drain-source voltage: -30V Drain current: -4A On-state resistance: 54mΩ Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -15A Case: SC70 кількість в упаковці: 1 шт |
товар відсутній |
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| SI1467DH-T1-E3 | VISHAY |
SI1467DH-T1-E3 SMD P channel transistors |
товар відсутній |
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| SI1467DH-T1-GE3 | VISHAY |
SI1467DH-T1-GE3 SMD P channel transistors |
товар відсутній |
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| SI1469DH-T1-E3 | VISHAY |
SI1469DH-T1-E3 SMD P channel transistors |
товар відсутній |
| SG333R00JR18 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 33Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 33Ω
Tolerance: ±5%
Power: 3W
Operating temperature: -55...250°C
Max. operating voltage: 100V
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Temperature coefficient: 150ppm/°C
Leads dimensions: Ø0.8x25mm
Leads: axial
кількість в упаковці: 1 шт
Category: Power resistors
Description: Resistor: wire-wound; THT; 33Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 33Ω
Tolerance: ±5%
Power: 3W
Operating temperature: -55...250°C
Max. operating voltage: 100V
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Temperature coefficient: 150ppm/°C
Leads dimensions: Ø0.8x25mm
Leads: axial
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 145.25 грн |
| 10+ | 28.01 грн |
| 50+ | 19.6 грн |
| 66+ | 16.1 грн |
| 181+ | 15.2 грн |
| 250+ | 14.84 грн |
| SG347R00JR18 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 47Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 47Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 100V
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -55...250°C
Resistor features: non-flammable
Temperature coefficient: 150ppm/°C
Leads: axial
кількість в упаковці: 1 шт
Category: Power resistors
Description: Resistor: wire-wound; THT; 47Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 47Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 100V
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -55...250°C
Resistor features: non-flammable
Temperature coefficient: 150ppm/°C
Leads: axial
кількість в упаковці: 1 шт
на замовлення 463 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.34 грн |
| 10+ | 117.65 грн |
| 18+ | 59.34 грн |
| 49+ | 55.75 грн |
| SG34R700JR18 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 4.7Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 4.7Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 100V
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -55...250°C
Resistor features: non-flammable
Temperature coefficient: 150ppm/°C
Leads: axial
кількість в упаковці: 1 шт
Category: Power resistors
Description: Resistor: wire-wound; THT; 4.7Ω; 3W; ±5%; Ø4.8x13mm; -55÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 4.7Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 100V
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -55...250°C
Resistor features: non-flammable
Temperature coefficient: 150ppm/°C
Leads: axial
кількість в упаковці: 1 шт
товар відсутній
| SGL41-20-E3/96 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
на замовлення 1478 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.51 грн |
| 10+ | 37.54 грн |
| 47+ | 22.34 грн |
| 129+ | 21.12 грн |
| 1000+ | 20.32 грн |
| SGL41-30-E3/96 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
товар відсутній
| SGL41-40-E3/96 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.5V
кількість в упаковці: 1 шт
на замовлення 1660 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.51 грн |
| 10+ | 38.75 грн |
| 55+ | 19.06 грн |
| 152+ | 18.02 грн |
| 1500+ | 17.89 грн |
| SGL41-50-E3/96 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.7V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.7V
кількість в упаковці: 1 шт
товар відсутній
| SGL41-60-E3/96 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.7V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; GL41; MELF plastic
Mounting: SMD
Kind of package: reel; tape
Load current: 1A
Max. forward voltage: 0.7V
кількість в упаковці: 1 шт
на замовлення 589 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.76 грн |
| 10+ | 31.19 грн |
| 50+ | 26.35 грн |
| 61+ | 17.45 грн |
| 166+ | 16.5 грн |
| SI1012CR-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.63A; Idm: 2A; 0.15W; SC75A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.63A
Pulsed drain current: 2A
Power dissipation: 0.15W
Case: SC75A
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.63A; Idm: 2A; 0.15W; SC75A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.63A
Pulsed drain current: 2A
Power dissipation: 0.15W
Case: SC75A
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 3540 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.83 грн |
| 13+ | 22.22 грн |
| 50+ | 13.49 грн |
| 100+ | 11.87 грн |
| 125+ | 8.36 грн |
| 344+ | 7.91 грн |
| 2000+ | 7.64 грн |
| SI1012R-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC75A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 80mW
Case: SC75A
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC75A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 80mW
Case: SC75A
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2548 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.53 грн |
| 25+ | 25.58 грн |
| 56+ | 18.79 грн |
| 153+ | 17.71 грн |
| SI1012X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC89,SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 80mW
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC89,SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.35A
Power dissipation: 80mW
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| SI1013CX-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -450mA; 190mW
Case: SC89
Drain-source voltage: -20V
Drain current: -450mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.19W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.5A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -450mA; 190mW
Case: SC89
Drain-source voltage: -20V
Drain current: -450mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.19W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.5A
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 2965 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.96 грн |
| 16+ | 18.58 грн |
| 25+ | 12.32 грн |
| 100+ | 9.44 грн |
| 182+ | 5.84 грн |
| 499+ | 5.48 грн |
| 9000+ | 5.31 грн |
| SI1013X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -400mA; Idm: -1A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -400mA
Pulsed drain current: -1A
Power dissipation: 0.275W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -400mA; Idm: -1A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -400mA
Pulsed drain current: -1A
Power dissipation: 0.275W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1016CX-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.49/-0.49A
Pulsed drain current: 2A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396/756mΩ
Mounting: SMD
Gate charge: 2/2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.49/-0.49A
Pulsed drain current: 2A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396/756mΩ
Mounting: SMD
Gate charge: 2/2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.83 грн |
| 11+ | 27.64 грн |
| 25+ | 21.31 грн |
| 96+ | 11.06 грн |
| 263+ | 10.43 грн |
| 3000+ | 9.98 грн |
| SI1016X-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 515/-390mA
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7/1.25Ω
Mounting: SMD
Gate charge: 1.5/0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 515/-390mA
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7/1.25Ω
Mounting: SMD
Gate charge: 1.5/0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1022R-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; 0.13W; SC75A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 0.13W
Features of semiconductor devices: ESD protected gate
Gate charge: 0.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC75A
Drain-source voltage: 60V
Drain current: 0.24A
On-state resistance: 1.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; 0.13W; SC75A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 0.13W
Features of semiconductor devices: ESD protected gate
Gate charge: 0.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC75A
Drain-source voltage: 60V
Drain current: 0.24A
On-state resistance: 1.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 3011 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.14 грн |
| 25+ | 22.6 грн |
| 63+ | 16.63 грн |
| 174+ | 15.74 грн |
| SI1023CX-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -450mA; 220mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.45A
Pulsed drain current: -1.5A
Power dissipation: 0.22W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -450mA; 220mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.45A
Pulsed drain current: -1.5A
Power dissipation: 0.22W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1023X-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -390mA
Pulsed drain current: -0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -390mA
Pulsed drain current: -0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1024X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 515mA
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 515mA
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI1025X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.19A; Idm: -0.65A; 0.13W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.19A
Pulsed drain current: -0.65A
Power dissipation: 0.13W
Case: SC89; SOT563
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.19A; Idm: -0.65A; 0.13W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.19A
Pulsed drain current: -0.65A
Power dissipation: 0.13W
Case: SC89; SOT563
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| SI1026X-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.13W
Case: SC89; SOT563
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.13W
Case: SC89; SOT563
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI1029X-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22/-0.135A
Pulsed drain current: 0.65A
Power dissipation: 0.13W
Case: SC89
Gate-source voltage: ±20V
On-state resistance: 3/8Ω
Mounting: SMD
Gate charge: 0.75/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60V; 0.22/-0.135A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22/-0.135A
Pulsed drain current: 0.65A
Power dissipation: 0.13W
Case: SC89
Gate-source voltage: ±20V
On-state resistance: 3/8Ω
Mounting: SMD
Gate charge: 0.75/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1032R-T1-GE3 |
|
Виробник: VISHAY
SI1032R-T1-GE3 SMD N channel transistors
SI1032R-T1-GE3 SMD N channel transistors
на замовлення 2969 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.01 грн |
| 72+ | 14.57 грн |
| 198+ | 13.76 грн |
| SI1032X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.21A
Pulsed drain current: 0.6A
Power dissipation: 0.34W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.21A
Pulsed drain current: 0.6A
Power dissipation: 0.34W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1034CX-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.49A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.49A; 0.14W; SC89,SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.49A
Power dissipation: 0.14W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 396mΩ
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI1034X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.19A
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.19A
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1036X-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 610mA
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 610mA
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1977 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.96 грн |
| 12+ | 24.28 грн |
| 100+ | 14.03 грн |
| 141+ | 7.46 грн |
| 389+ | 7.1 грн |
| 75000+ | 6.74 грн |
| SI1040X-T1-GE3 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
кількість в упаковці: 1 шт
товар відсутній
| SI1050X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 236mW
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 236mW
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1062X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.53A
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 762mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.53A
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 762mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5896 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.34 грн |
| 16+ | 17.93 грн |
| 25+ | 12.8 грн |
| 50+ | 10.59 грн |
| 100+ | 8.71 грн |
| 189+ | 5.6 грн |
| 518+ | 5.3 грн |
| SI1070X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 236mW
Case: SC89; SOT563
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 236mW
Case: SC89; SOT563
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1077X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.75A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.75A
Pulsed drain current: -8A
Power dissipation: 0.33W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 188mΩ
Mounting: SMD
Gate charge: 31.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.75A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.75A
Pulsed drain current: -8A
Power dissipation: 0.33W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 188mΩ
Mounting: SMD
Gate charge: 31.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.86 грн |
| 13+ | 22.13 грн |
| 25+ | 19.42 грн |
| 100+ | 12.77 грн |
| 113+ | 9.26 грн |
| 311+ | 8.81 грн |
| 3000+ | 8.54 грн |
| Si1078X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.02A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.02A
Pulsed drain current: 6A
Power dissipation: 0.24W
Case: SC89; SOT563
Gate-source voltage: ±12V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.02A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.02A
Pulsed drain current: 6A
Power dissipation: 0.24W
Case: SC89; SOT563
Gate-source voltage: ±12V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1079X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -1.44A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.44A
Pulsed drain current: -8A
Power dissipation: 0.33W
Case: SC89
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -1.44A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.44A
Pulsed drain current: -8A
Power dissipation: 0.33W
Case: SC89
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1302DL-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.6A; Idm: 1.5A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.6A; Idm: 1.5A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1302DL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 0.86nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; 0.18W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Power dissipation: 0.18W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 480mΩ
Mounting: SMD
Gate charge: 0.86nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1308EDL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; SC70
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 132mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Features of semiconductor devices: ESD protected gate
Gate charge: 4.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Case: SC70
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; SC70
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 132mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Features of semiconductor devices: ESD protected gate
Gate charge: 4.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Case: SC70
кількість в упаковці: 1 шт
на замовлення 2646 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 21.59 грн |
| 25+ | 15.97 грн |
| 90+ | 11.78 грн |
| 246+ | 11.15 грн |
| SI1317DL-T1-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -6A
Power dissipation: 0.5W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -6A
Power dissipation: 0.5W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1317DL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.3W; SC70
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -6A
Mounting: SMD
Case: SC70
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.3W; SC70
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -6A
Mounting: SMD
Case: SC70
кількість в упаковці: 1 шт
на замовлення 2920 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.8 грн |
| 11+ | 25.68 грн |
| 25+ | 15.47 грн |
| 99+ | 10.61 грн |
| 271+ | 10.07 грн |
| 1000+ | 9.89 грн |
| 3000+ | 9.71 грн |
| SI1330EDL-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SI1330EDL-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70
Case: SC70
Mounting: SMD
Gate charge: 0.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.19A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Power dissipation: 0.18W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70
Case: SC70
Mounting: SMD
Gate charge: 0.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.19A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Power dissipation: 0.18W
кількість в упаковці: 1 шт
товар відсутній
| SI1330EDL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
кількість в упаковці: 3000 шт
товар відсутній
| SI1403BDL-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
кількість в упаковці: 3000 шт
товар відсутній
| SI1403BDL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Power dissipation: 0.625W
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
кількість в упаковці: 3000 шт
товар відсутній
| SI1403CDL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.6W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.6W
Case: SC70-6
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.6W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.6W
Case: SC70-6
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI1411DH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.38A; 0.81W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.38A
Power dissipation: 0.81W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.38A; 0.81W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.38A
Power dissipation: 0.81W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SI1424EDH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
кількість в упаковці: 1 шт
товар відсутній
| SI1427EDH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
| SI1428EDH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
| SI1441EDH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -25A
Case: SC70-6; SOT363
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -25A
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -25A
Case: SC70-6; SOT363
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -25A
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
| SI1442DH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 4A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Case: SC70-6; SOT363
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 4A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Case: SC70-6; SOT363
Kind of package: reel; tape
Gate charge: 33nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
на замовлення 2861 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.86 грн |
| 13+ | 23.06 грн |
| 25+ | 15.2 грн |
| 100+ | 9.8 грн |
| 118+ | 8.9 грн |
| 325+ | 8.45 грн |
| 3000+ | 8.18 грн |
| SI1443EDH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; SC70
Mounting: SMD
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 54mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -15A
Case: SC70
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; SC70
Mounting: SMD
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 54mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -15A
Case: SC70
кількість в упаковці: 1 шт
товар відсутній