| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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KSA1013YTA | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92L Mounting: THT Case: TO92L Kind of package: Ammo Pack Frequency: 50MHz Collector-emitter voltage: 160V Current gain: 160...320 Collector current: 1A Type of transistor: PNP Power dissipation: 0.9W Polarisation: bipolar |
на замовлення 425 шт: термін постачання 21-30 дні (днів) |
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| BB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Kind of connector: pin strips; Pmod socket x2; power supply; USB Components: FT232BL; NCS36510 Type of development kit: evaluation |
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 200V; 1.9mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Zener current: 1.9mA Mounting: SMD Tolerance: ±5% Zener resistance: 1.2kΩ Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 4765 шт: термін постачання 21-30 дні (днів) |
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MC100EP05DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube Operating temperature: -40...85°C Kind of package: tube Type of integrated circuit: digital Number of channels: single; 1 Kind of gate: AND; multiple-function; NAND Mounting: SMD Case: SO8 Number of inputs: 4 Supply voltage: 3...5.5V DC |
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MC100EP05DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: single; 1 Kind of gate: AND; multiple-function; NAND Mounting: SMD Case: TSSOP8 Number of inputs: 4 Supply voltage: 3...5.5V DC |
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MC100EP11DR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8 Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential; fanout buffer Mounting: SMD Case: SO8 Supply voltage: 3...5.5V DC |
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MC100EP11DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential; fanout buffer Mounting: SMD Case: TSSOP8 Supply voltage: 3...5.5V DC |
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MC100EP16MNR4G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential; driver; receiver Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
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MC100EP195FAG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz Mounting: SMD Case: LQFP32 Operating temperature: -40...85°C Kind of integrated circuit: PDC Supply voltage: 3.3V DC Frequency: 1.2GHz Type of integrated circuit: digital Kind of output: ECL |
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MC100EP32MNR4G | ONSEMI |
Category: Counters/dividers Description: IC: digital; divided by 2; Ch: 1; SMD; DFN8; 3÷5.5VDC; reel,tape Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: divided by 2 Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
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MC100EP52DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; tube; OUT: ECL Operating temperature: -40...85°C Kind of package: tube Type of integrated circuit: digital Number of channels: 1 Kind of output: ECL Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop Mounting: SMD Case: SO8 Supply voltage: 3...5.5V DC |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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MC100EP52DTG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL Operating temperature: -40...85°C Kind of package: tube Type of integrated circuit: digital Number of channels: 1 Kind of output: ECL Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop Mounting: SMD Case: TSSOP8 Supply voltage: 3.3...5V DC |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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MC100EP56DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 2; SMD; TSSOP20; 3÷5.5VDC; reel,tape Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 2 Kind of integrated circuit: multiplexer Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC |
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MC100EP90DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; 3÷5.5VDC; SMD Operating temperature: -40...85°C Manufacturer series: 100EP Kind of package: tube Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Case: TSSOP20 Number of inputs: 6 Number of outputs: 6 Supply voltage: 3...5.5V DC |
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MC100EP91DWG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC Operating temperature: -40...85°C Manufacturer series: 100EP Kind of package: tube Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Case: SO20 Number of inputs: 6 Number of outputs: 6 Supply voltage: 2.37...3.8V DC |
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| MC100EP91MNG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC Operating temperature: -40...85°C Manufacturer series: 100EP Kind of package: tube Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Case: QFN24 Number of inputs: 6 Number of outputs: 6 Supply voltage: 2.37...3.8V DC |
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MC100EPT20DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
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MC100EPT20DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 3÷3.6VDC; SMD Mounting: SMD Operating temperature: -40...85°C Manufacturer series: 100EPT Supply voltage: 3...3.6V DC Number of outputs: 1 Kind of package: tube Number of inputs: 2 Case: TSSOP8 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital Number of channels: 1 |
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MC100EPT21DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
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MC100EPT21DR2G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
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MC100EPT21DTG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: tube Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: TSSOP8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
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MC100EPT21DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: TSSOP8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
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BC546ABU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 2721 шт: термін постачання 21-30 дні (днів) |
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BC546BTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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BC546BTF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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BC546CTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
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FDD850N10L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Drain-source voltage: 100V Drain current: 11.1A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Case: DPAK |
на замовлення 2427 шт: термін постачання 21-30 дні (днів) |
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MMBFJ177LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 20mA; 0.225W; SOT23 Gate-source voltage: 25V Mounting: SMD Case: SOT23 Drain current: 20mA On-state resistance: 300Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape |
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MJL21194G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Polarisation: bipolar Kind of package: tube Case: TO264 Mounting: THT Power dissipation: 200W Collector-emitter voltage: 250V Collector current: 16A Type of transistor: NPN |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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| ISL9V3040S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems |
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KSD1692YS | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 1.3W; TO126ISO Mounting: THT Type of transistor: NPN Collector current: 3A Power dissipation: 1.3W Polarisation: bipolar Kind of package: tube Collector-emitter voltage: 100V Case: TO126ISO Kind of transistor: Darlington |
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1N5818G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: CASE59 Max. forward impulse current: 25A Max. forward voltage: 0.875V |
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FDS9926A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1355 шт: термін постачання 21-30 дні (днів) |
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FDD2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 4A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMQ8205 | ONSEMI |
Category: Integrated circuits - others Description: IC: driver; single phase transistor bridge; ideal diode bridge Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Technology: GreenBridge™ 2 Kind of integrated circuit: ideal diode bridge Topology: single phase transistor bridge Case: WDFN12 Type of integrated circuit: driver |
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FDD3672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3180 шт: термін постачання 21-30 дні (днів) |
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FDD3682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.7A Power dissipation: 52W Case: DPAK Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
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FDD3706 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 50A; Idm: 60A; 44W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 50A Pulsed drain current: 60A Power dissipation: 44W Case: DPAK Gate-source voltage: ±12V On-state resistance: 19mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD3860 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.2A Pulsed drain current: 60A Power dissipation: 83W Case: DPAK Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1830 шт: термін постачання 21-30 дні (днів) |
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FDD3N40TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDD3N50NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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TIP42G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 6A Power dissipation: 65W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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FDD8445 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK Mounting: SMD Kind of package: reel; tape Case: DPAK Gate charge: 7.6nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 70A On-state resistance: 16.3mΩ Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar |
на замовлення 1888 шт: термін постачання 21-30 дні (днів) |
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FDD8451 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 28A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2296 шт: термін постачання 21-30 дні (днів) |
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FDD8453LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 65W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 54W Case: DPAK Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1657 шт: термін постачання 21-30 дні (днів) |
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| FDD86110 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK Drain-source voltage: 100V Drain current: 50A On-state resistance: 10.2mΩ Type of transistor: N-MOSFET Power dissipation: 127W Polarisation: unipolar Kind of package: reel; tape Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK |
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FDD86250 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Pulsed drain current: 164A Power dissipation: 132W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2489 шт: термін постачання 21-30 дні (днів) |
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| FDD86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK Kind of package: reel; tape Power dissipation: 89W Polarisation: unipolar Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: 150V Drain current: 27A On-state resistance: 103mΩ Type of transistor: N-MOSFET |
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FDD86367 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 227W Case: DPAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2004 шт: термін постачання 21-30 дні (днів) |
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FDD8647L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Power dissipation: 43W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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FDD86540 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 86A Pulsed drain current: 240A Power dissipation: 127W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD86567-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 227W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| FDD8770 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK Drain-source voltage: 25V Drain current: 210A On-state resistance: 5.9mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Kind of package: reel; tape Gate charge: 73nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 407A Mounting: SMD Case: DPAK |
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| FDD8796 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 98A Pulsed drain current: 305A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD8870 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 160W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDD8880 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 58A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDD8896 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 94A Power dissipation: 80W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2450 шт: термін постачання 21-30 дні (днів) |
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| KSA1013YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92L
Mounting: THT
Case: TO92L
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 160V
Current gain: 160...320
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92L
Mounting: THT
Case: TO92L
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 160V
Current gain: 160...320
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
на замовлення 425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.11 грн |
| 26+ | 14.45 грн |
| 28+ | 13.36 грн |
| 76+ | 11.18 грн |
| 209+ | 10.6 грн |
| BB-GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Kind of connector: pin strips; Pmod socket x2; power supply; USB
Components: FT232BL; NCS36510
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Kind of connector: pin strips; Pmod socket x2; power supply; USB
Components: FT232BL; NCS36510
Type of development kit: evaluation
товар відсутній
| 1SMB5956BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; 1.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Zener current: 1.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 1.2kΩ
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; 1.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Zener current: 1.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 1.2kΩ
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 4765 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.57 грн |
| 40+ | 9.07 грн |
| 100+ | 8.13 грн |
| 135+ | 6.46 грн |
| 365+ | 6.1 грн |
| MC100EP05DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: SO8
Number of inputs: 4
Supply voltage: 3...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: SO8
Number of inputs: 4
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP05DTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: TSSOP8
Number of inputs: 4
Supply voltage: 3...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: single; 1
Kind of gate: AND; multiple-function; NAND
Mounting: SMD
Case: TSSOP8
Number of inputs: 4
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP11DR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD; SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP11DTR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: TSSOP8
Supply voltage: 3...5.5V DC
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; fanout buffer
Mounting: SMD
Case: TSSOP8
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP16MNR4G |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; driver; receiver
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential; driver; receiver
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP195FAG |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of integrated circuit: PDC
Supply voltage: 3.3V DC
Frequency: 1.2GHz
Type of integrated circuit: digital
Kind of output: ECL
Category: Other logic integrated circuits
Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of integrated circuit: PDC
Supply voltage: 3.3V DC
Frequency: 1.2GHz
Type of integrated circuit: digital
Kind of output: ECL
товар відсутній
| MC100EP32MNR4G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; divided by 2; Ch: 1; SMD; DFN8; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: divided by 2
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Counters/dividers
Description: IC: digital; divided by 2; Ch: 1; SMD; DFN8; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: divided by 2
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP52DG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO8
Supply voltage: 3...5.5V DC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 687.98 грн |
| 2+ | 521.96 грн |
| 5+ | 493.65 грн |
| MC100EP52DTG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: TSSOP8
Supply voltage: 3.3...5V DC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Operating temperature: -40...85°C
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: TSSOP8
Supply voltage: 3.3...5V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 630.91 грн |
| 2+ | 476.95 грн |
| 5+ | 450.82 грн |
| MC100EP56DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; SMD; TSSOP20; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; SMD; TSSOP20; 3÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP90DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: TSSOP20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 3...5.5V DC
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 3÷5.5VDC; SMD
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: TSSOP20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 3...5.5V DC
товар відсутній
| MC100EP91DWG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: SO20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: SO20
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
товар відсутній
| MC100EP91MNG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; 2.37÷3.8VDC
Operating temperature: -40...85°C
Manufacturer series: 100EP
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Supply voltage: 2.37...3.8V DC
товар відсутній
| MC100EPT20DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
товар відсутній
| MC100EPT20DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 3÷3.6VDC; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Supply voltage: 3...3.6V DC
Number of outputs: 1
Kind of package: tube
Number of inputs: 2
Case: TSSOP8
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Number of channels: 1
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 3÷3.6VDC; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Supply voltage: 3...3.6V DC
Number of outputs: 1
Kind of package: tube
Number of inputs: 2
Case: TSSOP8
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Number of channels: 1
товар відсутній
| MC100EPT21DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
товар відсутній
| MC100EPT21DR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
товар відсутній
| MC100EPT21DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: tube
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
товар відсутній
| MC100EPT21DTR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
товар відсутній
| BC546ABU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 2721 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.11 грн |
| 27+ | 13.79 грн |
| 50+ | 8.61 грн |
| 100+ | 6.9 грн |
| 217+ | 3.94 грн |
| 595+ | 3.72 грн |
| 1000+ | 3.59 грн |
| BC546BTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.11 грн |
| 32+ | 11.69 грн |
| 100+ | 6.13 грн |
| BC546BTF |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 1900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.89 грн |
| 28+ | 13.28 грн |
| 100+ | 6.41 грн |
| 276+ | 3.09 грн |
| 758+ | 2.93 грн |
| BC546CTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
товар відсутній
| FDD850N10L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
на замовлення 2427 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.62 грн |
| 7+ | 54.45 грн |
| 20+ | 42.11 грн |
| 55+ | 39.93 грн |
| MMBFJ177LT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 20mA; 0.225W; SOT23
Gate-source voltage: 25V
Mounting: SMD
Case: SOT23
Drain current: 20mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 20mA; 0.225W; SOT23
Gate-source voltage: 25V
Mounting: SMD
Case: SOT23
Drain current: 20mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
товар відсутній
| MJL21194G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Polarisation: bipolar
Kind of package: tube
Case: TO264
Mounting: THT
Power dissipation: 200W
Collector-emitter voltage: 250V
Collector current: 16A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Polarisation: bipolar
Kind of package: tube
Case: TO264
Mounting: THT
Power dissipation: 200W
Collector-emitter voltage: 250V
Collector current: 16A
Type of transistor: NPN
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 336.95 грн |
| 4+ | 225.04 грн |
| 11+ | 214.16 грн |
| ISL9V3040S3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
товар відсутній
| KSD1692YS |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 1.3W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector current: 3A
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: tube
Collector-emitter voltage: 100V
Case: TO126ISO
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 1.3W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector current: 3A
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: tube
Collector-emitter voltage: 100V
Case: TO126ISO
Kind of transistor: Darlington
товар відсутній
| 1N5818G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward impulse current: 25A
Max. forward voltage: 0.875V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward impulse current: 25A
Max. forward voltage: 0.875V
товар відсутній
| FDS9926A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 35.73 грн |
| 25+ | 29.62 грн |
| 37+ | 23.23 грн |
| 102+ | 21.92 грн |
| FDD2572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMQ8205 |
|
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Case: WDFN12
Type of integrated circuit: driver
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: GreenBridge™ 2
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Case: WDFN12
Type of integrated circuit: driver
товар відсутній
| FDD3672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.63 грн |
| 5+ | 85.66 грн |
| 14+ | 63.88 грн |
| 36+ | 60.25 грн |
| FDD3682 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD306P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.18 грн |
| 8+ | 48.93 грн |
| 24+ | 35.57 грн |
| 65+ | 34.12 грн |
| 500+ | 33.83 грн |
| FDD3706 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 50A; Idm: 60A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 60A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 50A; Idm: 60A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 60A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD3860 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.2A
Pulsed drain current: 60A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.2A
Pulsed drain current: 60A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.02 грн |
| 7+ | 57.35 грн |
| 19+ | 46.11 грн |
| 50+ | 43.59 грн |
| 500+ | 42.11 грн |
| FDD3N40TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD3N50NZTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TIP42G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.94 грн |
| 7+ | 51.54 грн |
| FDD8445 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Gate charge: 7.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 70A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Gate charge: 7.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 70A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.58 грн |
| 7+ | 58.08 грн |
| 18+ | 47.19 грн |
| 50+ | 45.01 грн |
| 500+ | 42.83 грн |
| FDD8451 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2296 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.14 грн |
| 8+ | 45.44 грн |
| 24+ | 37.02 грн |
| 64+ | 34.85 грн |
| 500+ | 33.83 грн |
| FDD8453LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 65W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 65W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD86102LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1657 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.13 грн |
| 14+ | 60.98 грн |
| 39+ | 57.35 грн |
| FDD86110 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
товар відсутній
| FDD86250 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Pulsed drain current: 164A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Pulsed drain current: 164A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.72 грн |
| 5+ | 116.88 грн |
| 10+ | 90.02 грн |
| 27+ | 84.94 грн |
| FDD86252 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Kind of package: reel; tape
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Kind of package: reel; tape
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
товар відсутній
| FDD86367 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2004 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.43 грн |
| 5+ | 106.71 грн |
| 10+ | 85.66 грн |
| 28+ | 81.31 грн |
| 500+ | 78.4 грн |
| FDD8647L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 87.56 грн |
| 6+ | 63.88 грн |
| 18+ | 48.64 грн |
| 48+ | 46.46 грн |
| FDD86540 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Pulsed drain current: 240A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Pulsed drain current: 240A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD86567-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| FDD8770 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
товар відсутній
| FDD8796 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD8870 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD8878 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD8880 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD8896 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.89 грн |
| 10+ | 50.38 грн |
| 23+ | 37.02 грн |
| 63+ | 34.85 грн |