Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NCP3063BMNTXG | ONSEMI |
![]() Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DFN8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 5...40V |
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NCP3063DR2G | ONSEMI |
![]() Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 5...40V |
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NCP3063MNTXG | ONSEMI |
![]() Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DFN8 Mounting: SMD Frequency: 110...190kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 5...40V |
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MMBT2222LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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BC848ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5559 шт: термін постачання 21-30 дні (днів) |
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BC848BLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.03W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 30mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5630 шт: термін постачання 21-30 дні (днів) |
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BC848BLT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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1N5355BG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 18V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 18V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 463 шт: термін постачання 21-30 дні (днів) |
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1N5355BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 18V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
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KSP2907ABU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 50...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
на замовлення 7915 шт: термін постачання 21-30 дні (днів) |
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KSP2907ACTA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 50...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
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KSP2907ATA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 50...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
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KSP2907ATF | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 50...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
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MC33166TG | ONSEMI |
![]() Description: IC: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 3A; TO220-5; Ch: 1; tube Mounting: THT Operating temperature: -40...85°C Case: TO220-5 Kind of package: tube Kind of integrated circuit: DC/DC converter Topology: boost; buck; buck-boost Frequency: 72kHz Output current: 3A Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Input voltage: 7.5...40V DC |
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MC33167TG | ONSEMI |
![]() Description: IC: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 5A; TO220-5; Ch: 1; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 7.5...40V DC Output current: 5A Case: TO220-5 Mounting: THT Frequency: 72kHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube Application: SMPS |
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FCD4N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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MOC3062M | ONSEMI |
![]() ![]() Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT |
на замовлення 571 шт: термін постачання 21-30 дні (днів) |
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MOC3062SR2M | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: Gull wing 6 Mounting: SMD Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs |
на замовлення 196 шт: термін постачання 21-30 дні (днів) |
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MOC3062SR2VM | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: Gull wing 6 Mounting: SMD Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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MOC3062TVM | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs |
на замовлення 159 шт: термін постачання 21-30 дні (днів) |
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MUR1560G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 791 шт: термін постачання 21-30 дні (днів) |
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MC74HC373ADTG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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MC74HC373ADTR2G | ONSEMI |
![]() Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: latch transparent Number of channels: 8 Technology: CMOS; TTL Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Quiescent current: 160µA |
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MC74HC373ADWG | ONSEMI |
![]() Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: latch transparent Number of channels: 8 Technology: CMOS; TTL Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Quiescent current: 160µA |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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MC74HC373ADWR2G | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Trigger: level-triggered |
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MM74HC373MTC | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20WB Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC |
на замовлення 207 шт: термін постачання 21-30 дні (днів) |
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MM74HC373MTCX | ONSEMI |
![]() Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20WB Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HC |
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MM74HC373WM | ONSEMI |
![]() ![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered |
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MM74HC373WMX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered |
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BCP68T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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SBCP68T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 50...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
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MC74HC4067ADTR2G | ONSEMI |
![]() Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; CMOS Manufacturer series: HC Supply voltage: 2...6V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: analog; demultiplexer; multiplexer; switch Family: HC Mounting: SMD Operating temperature: -55...125°C Case: TSSOP24 |
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SBC856ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 90...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2715 шт: термін постачання 21-30 дні (днів) |
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HUF75332P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB Mounting: THT Power dissipation: 145W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220AB Drain-source voltage: 55V Drain current: 60A On-state resistance: 16mΩ Type of transistor: N-MOSFET |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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HUF75339P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB Mounting: THT Power dissipation: 200W Polarisation: unipolar Kind of package: tube Gate charge: 130nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220AB Drain-source voltage: 55V Drain current: 75A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
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BSS63LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 95MHz |
на замовлення 3525 шт: термін постачання 21-30 дні (днів) |
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NRVUS2MA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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BC849BLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1380 шт: термін постачання 21-30 дні (днів) |
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MMBT5550LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23 Power dissipation: 0.225/0.3W Mounting: SMD Kind of package: reel; tape Case: SOT23 Collector-emitter voltage: 140V Current gain: 20...250 Collector current: 0.6A Type of transistor: NPN Polarisation: bipolar |
на замовлення 3013 шт: термін постачання 21-30 дні (днів) |
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NV25010DWHFT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8 Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory: 1kb EEPROM Case: SOIC8 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Operating voltage: 2.5...5.5V Kind of interface: serial Memory organisation: 128x8bit Access time: 40ns Clock frequency: 10MHz |
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NV25080DWHFT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Mounting: SMD Interface: SPI Memory: 8kb EEPROM Operating voltage: 2.5...5.5V Clock frequency: 10MHz Kind of memory: EEPROM Operating temperature: -40...150°C Kind of package: reel; tape Case: SOIC8 Kind of interface: serial Type of integrated circuit: EEPROM memory Memory organisation: 1kx8bit Access time: 40ns |
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BAW56LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Mounting: SMD Power dissipation: 0.3W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Case: SOT23 Capacitance: 2pF Max. off-state voltage: 70V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 6ns Max. forward impulse current: 4A Leakage current: 50µA |
на замовлення 6520 шт: термін постачання 21-30 дні (днів) |
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BAW56LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 70V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
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MBRA140T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Mounting: SMD Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 0.74V Max. load current: 2A Load current: 1A Max. off-state voltage: 40V |
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BC517-D74Z | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
на замовлення 1765 шт: термін постачання 21-30 дні (днів) |
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MC1455DR2G | ONSEMI |
![]() Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: astable; monostable; RC timer Case: SO8 Mounting: SMD Supply voltage: 4.5...16V DC Operating temperature: 0...70°C Kind of package: reel; tape DC supply current: 10mA Output current: 0.2A Controlled voltage: 10V |
на замовлення 915 шт: термін постачання 21-30 дні (днів) |
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MBRS260T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 2A Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: SMD Case: SMB |
на замовлення 3370 шт: термін постачання 21-30 дні (днів) |
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NLAS1053USG | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC Supply voltage: 2...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of output: SPST-NO Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Type of integrated circuit: analog switch Technology: CMOS Quiescent current: 2µA Kind of package: reel; tape Case: US8 |
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FCD5N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD5N60NZTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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FQD5N60CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FQI5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
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FQU5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
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FCH25N60N | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 75A Power dissipation: 216W Case: TO247 Gate-source voltage: ±30V On-state resistance: 108mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced |
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FCH35N60 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.2A Pulsed drain current: 105A Power dissipation: 312.5W Case: TO247 Gate-source voltage: ±30V On-state resistance: 79mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhanced |
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NTB45N06T4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 125W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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MOC3051M | ONSEMI |
![]() ![]() Description: Optotriac; 5.3kV; Uout: 600V; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
на замовлення 822 шт: термін постачання 21-30 дні (днів) |
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2N3773G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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74VHC245M | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA |
товар відсутній |
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74VHC245MTCX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 1025 шт: термін постачання 21-30 дні (днів) |
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NCP3063BMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DFN8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...40V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DFN8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 5...40V
товар відсутній
NCP3063DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 5...40V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 5...40V
товар відсутній
NCP3063MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DFN8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 5...40V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DFN8
Mounting: SMD
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 5...40V
товар відсутній
MMBT2222LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товар відсутній
BC848ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5559 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
46+ | 8.6 грн |
64+ | 5.74 грн |
118+ | 3.1 грн |
500+ | 2.08 грн |
643+ | 1.33 грн |
1767+ | 1.25 грн |
BC848BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.03W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 30mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.03W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 30mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
46+ | 8.6 грн |
63+ | 5.81 грн |
126+ | 2.9 грн |
500+ | 1.86 грн |
707+ | 1.21 грн |
1944+ | 1.14 грн |
BC848BLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
1N5355BG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 463 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 28.93 грн |
67+ | 12.85 грн |
184+ | 12.12 грн |
1N5355BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
KSP2907ABU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
на замовлення 7915 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.32 грн |
80+ | 4.65 грн |
100+ | 4.17 грн |
260+ | 3.32 грн |
705+ | 3.14 грн |
KSP2907ACTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
товар відсутній
KSP2907ATA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
товар відсутній
KSP2907ATF |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 50...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
MC33166TG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 3A; TO220-5; Ch: 1; tube
Mounting: THT
Operating temperature: -40...85°C
Case: TO220-5
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Topology: boost; buck; buck-boost
Frequency: 72kHz
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 7.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 3A; TO220-5; Ch: 1; tube
Mounting: THT
Operating temperature: -40...85°C
Case: TO220-5
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Topology: boost; buck; buck-boost
Frequency: 72kHz
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 7.5...40V DC
товар відсутній
MC33167TG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 5A; TO220-5; Ch: 1; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 7.5...40V DC
Output current: 5A
Case: TO220-5
Mounting: THT
Frequency: 72kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Application: SMPS
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 5A; TO220-5; Ch: 1; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 7.5...40V DC
Output current: 5A
Case: TO220-5
Mounting: THT
Frequency: 72kHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Application: SMPS
товар відсутній
FCD4N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
MOC3062M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
на замовлення 571 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 81.31 грн |
7+ | 53.28 грн |
25+ | 49.36 грн |
27+ | 31.94 грн |
74+ | 30.2 грн |
MOC3062SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
на замовлення 196 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 110.23 грн |
6+ | 67.51 грн |
21+ | 42.11 грн |
56+ | 39.93 грн |
MOC3062SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
на замовлення 308 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 75.05 грн |
10+ | 43.92 грн |
24+ | 36.22 грн |
65+ | 34.26 грн |
MOC3062TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
на замовлення 159 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 63.33 грн |
9+ | 42.25 грн |
23+ | 37.87 грн |
62+ | 35.8 грн |
100+ | 34.41 грн |
MUR1560G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 791 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 100.85 грн |
5+ | 79.13 грн |
10+ | 68.97 грн |
14+ | 62.43 грн |
38+ | 58.8 грн |
250+ | 56.62 грн |
MC74HC373ADTG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
на замовлення 124 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 67.23 грн |
10+ | 51.32 грн |
32+ | 27.27 грн |
86+ | 25.79 грн |
MC74HC373ADTR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 160µA
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 160µA
товар відсутній
MC74HC373ADWG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Quiescent current: 160µA
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Quiescent current: 160µA
на замовлення 146 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 50.82 грн |
10+ | 42.61 грн |
28+ | 30.64 грн |
77+ | 28.97 грн |
MC74HC373ADWR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
товар відсутній
MM74HC373MTC |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
на замовлення 207 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 66.45 грн |
10+ | 51.98 грн |
28+ | 30.56 грн |
77+ | 28.89 грн |
MM74HC373MTCX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
товар відсутній
MM74HC373WM | ![]() |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
товар відсутній
MM74HC373WMX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
товар відсутній
BCP68T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 39.09 грн |
SBCP68T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
товар відсутній
MC74HC4067ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; CMOS
Manufacturer series: HC
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Family: HC
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP24
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; CMOS
Manufacturer series: HC
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Family: HC
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP24
товар відсутній
SBC856ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 90...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 90...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2715 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 11.1 грн |
75+ | 4.85 грн |
100+ | 4.3 грн |
215+ | 3.99 грн |
500+ | 3.85 грн |
580+ | 3.77 грн |
HUF75332P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Mounting: THT
Power dissipation: 145W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 55V
Drain current: 60A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Mounting: THT
Power dissipation: 145W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 55V
Drain current: 60A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
на замовлення 62 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 120.4 грн |
10+ | 91.47 грн |
12+ | 76.95 грн |
31+ | 72.6 грн |
HUF75339P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 55V
Drain current: 75A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 130nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 55V
Drain current: 75A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товар відсутній
BSS63LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 95MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 95MHz
на замовлення 3525 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.81 грн |
175+ | 2.34 грн |
450+ | 1.95 грн |
1200+ | 1.84 грн |
NRVUS2MA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
BC849BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
160+ | 2.46 грн |
180+ | 2.07 грн |
500+ | 1.71 грн |
1360+ | 1.61 грн |
MMBT5550LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23
Power dissipation: 0.225/0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Collector-emitter voltage: 140V
Current gain: 20...250
Collector current: 0.6A
Type of transistor: NPN
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23
Power dissipation: 0.225/0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Collector-emitter voltage: 140V
Current gain: 20...250
Collector current: 0.6A
Type of transistor: NPN
Polarisation: bipolar
на замовлення 3013 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
46+ | 8.6 грн |
61+ | 5.95 грн |
78+ | 4.68 грн |
116+ | 3.14 грн |
500+ | 2.02 грн |
712+ | 1.2 грн |
1958+ | 1.13 грн |
NV25010DWHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory: 1kb EEPROM
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory organisation: 128x8bit
Access time: 40ns
Clock frequency: 10MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory: 1kb EEPROM
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory organisation: 128x8bit
Access time: 40ns
Clock frequency: 10MHz
товар відсутній
NV25080DWHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Kind of memory: EEPROM
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOIC8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Kind of memory: EEPROM
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOIC8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 40ns
товар відсутній
BAW56LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 70V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 6ns
Max. forward impulse current: 4A
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 70V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 6ns
Max. forward impulse current: 4A
Leakage current: 50µA
на замовлення 6520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
62+ | 6.36 грн |
85+ | 4.28 грн |
103+ | 3.56 грн |
172+ | 2.11 грн |
500+ | 1.36 грн |
855+ | 0.99 грн |
2351+ | 0.94 грн |
BAW56LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
товар відсутній
MBRA140T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. load current: 2A
Load current: 1A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. load current: 2A
Load current: 1A
Max. off-state voltage: 40V
товар відсутній
BC517-D74Z |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
на замовлення 1765 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 21.11 грн |
25+ | 14.95 грн |
32+ | 11.54 грн |
100+ | 7.11 грн |
126+ | 6.82 грн |
345+ | 6.46 грн |
MC1455DR2G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Case: SO8
Mounting: SMD
Supply voltage: 4.5...16V DC
Operating temperature: 0...70°C
Kind of package: reel; tape
DC supply current: 10mA
Output current: 0.2A
Controlled voltage: 10V
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Case: SO8
Mounting: SMD
Supply voltage: 4.5...16V DC
Operating temperature: 0...70°C
Kind of package: reel; tape
DC supply current: 10mA
Output current: 0.2A
Controlled voltage: 10V
на замовлення 915 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 23.45 грн |
25+ | 17.86 грн |
62+ | 13.72 грн |
169+ | 12.92 грн |
MBRS260T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMB
на замовлення 3370 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 13.37 грн |
50+ | 10.6 грн |
120+ | 7.33 грн |
320+ | 6.9 грн |
NLAS1053USG |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPST-NO
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Type of integrated circuit: analog switch
Technology: CMOS
Quiescent current: 2µA
Kind of package: reel; tape
Case: US8
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPST-NO
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Type of integrated circuit: analog switch
Technology: CMOS
Quiescent current: 2µA
Kind of package: reel; tape
Case: US8
товар відсутній
FCD5N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FDD5N60NZTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.42 грн |
8+ | 48.93 грн |
22+ | 39.93 грн |
60+ | 37.75 грн |
500+ | 36.66 грн |
FQD5N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FQI5N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
FQU5N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
FCH25N60N |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
FCH35N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.2A
Pulsed drain current: 105A
Power dissipation: 312.5W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.2A
Pulsed drain current: 105A
Power dissipation: 312.5W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
NTB45N06T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
MOC3051M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
на замовлення 822 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 64.11 грн |
8+ | 50.53 грн |
25+ | 37.31 грн |
28+ | 30.42 грн |
77+ | 28.75 грн |
500+ | 27.88 грн |
2N3773G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 474.55 грн |
3+ | 353.54 грн |
7+ | 334.66 грн |
74VHC245M |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
товар відсутній
74VHC245MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 1025 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.16 грн |
10+ | 37.82 грн |
25+ | 33.97 грн |
32+ | 27.44 грн |
86+ | 25.92 грн |
1000+ | 25.19 грн |