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FQD7N30TM ONSEMI fqd7n30-d.pdf FQD7N30TM SMD N channel transistors
товар відсутній
FQD7P06TM ONSEMI fqd7p06-d.pdf FQD7P06TM SMD P channel transistors
товар відсутній
FQD7P20TM FQD7P20TM ONSEMI FQD7P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2482 шт:
термін постачання 14-21 дні (днів)
3+97.33 грн
5+ 69.49 грн
21+ 50.4 грн
56+ 46.93 грн
Мінімальне замовлення: 3
FQD8P10TM FQD8P10TM ONSEMI FQD8P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2390 шт:
термін постачання 14-21 дні (днів)
6+47.07 грн
25+ 41.15 грн
34+ 29.81 грн
93+ 28.16 грн
Мінімальне замовлення: 6
FQD8P10TM-F085 FQD8P10TM-F085 ONSEMI fqd8p10tm_f085-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
FQD9N25TM-F080 FQD9N25TM-F080 ONSEMI FQU9N25-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQH8N100C FQH8N100C ONSEMI fqh8n100c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FQI13N50CTU ONSEMI FAIRS45953-1.pdf?t.download=true&u=5oefqw fqi13n50c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 195W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI27N25TU ONSEMI FAIR-S-A0000097574-1.pdf?t.download=true&u=5oefqw FQI27N25TU THT N channel transistors
товар відсутній
FQI4N80TU ONSEMI FAIRS46000-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI4N90TU ONSEMI ONSM-S-A0003584473-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Pulsed drain current: 16.8A
Power dissipation: 140W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI5N60CTU ONSEMI FAIRS45966-1.pdf?t.download=true&u=5oefqw fqi5n60c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI7N80TU ONSEMI fqi7n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQL40N50F FQL40N50F ONSEMI fql40n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQN1N50CTA FQN1N50CTA ONSEMI fqn1n50c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
FQN1N60CTA FQN1N60CTA ONSEMI fqn1n60c-d.pdf FAIRS46432-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQNL2N50BTA ONSEMI ONSM-S-A0003585504-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 1.5W
Case: TO92L
Gate-source voltage: ±30V
On-state resistance: 5.3Ω
Mounting: THT
Gate charge: 8nC
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP10N20C FQP10N20C ONSEMI FAIRS45967-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP11N40C FQP11N40C ONSEMI FQP11N40C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 14-21 дні (днів)
2+168.46 грн
3+ 150.71 грн
10+ 101.68 грн
28+ 95.59 грн
500+ 92.12 грн
Мінімальне замовлення: 2
FQP12P10 FQP12P10 ONSEMI fqp12p10-d.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 75W
Drain current: -8.1A
Kind of channel: enhanced
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Pulsed drain current: -46A
Gate charge: 27nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
FQP14N30 FQP14N30 ONSEMI fqp14n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP15P12 FQP15P12 ONSEMI FAIR-S-A0002363799-1.pdf?t.download=true&u=5oefqw fqp15p12-d.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP16N25 FQP16N25 ONSEMI fqp16n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP17P06 FQP17P06 ONSEMI FQP17P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP24N08 ONSEMI fqp24n08-d.pdf FAIRS45803-1.pdf?t.download=true&u=5oefqw FQP24N08 THT N channel transistors
товар відсутній
FQP27P06 FQP27P06 ONSEMI FQP27P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 548 шт:
термін постачання 14-21 дні (днів)
2+163.78 грн
10+ 132.66 грн
11+ 96.46 грн
29+ 91.25 грн
500+ 87.77 грн
Мінімальне замовлення: 2
FQP2N40-F080 FQP2N40-F080 ONSEMI fqp2n40-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FQP2N80 FQP2N80 ONSEMI ONSM-S-A0003584912-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 6.3Ω
Drain current: 1.52A
Drain-source voltage: 800V
Power dissipation: 85W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 9.6A
кількість в упаковці: 1 шт
товар відсутній
FQP32N20C FQP32N20C ONSEMI FQP32N20C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; 156W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)
3+102.88 грн
10+ 87.77 грн
13+ 79.95 грн
35+ 75.6 грн
250+ 73 грн
Мінімальне замовлення: 3
FQP34N20 FQP34N20 ONSEMI ONSM-S-A0003585150-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220-3
Drain-source voltage: 200V
Drain current: 20A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
FQP3N50C-F080 FQP3N50C-F080 ONSEMI fqp3n50c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; Idm: 12A; 62W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.8A
Pulsed drain current: 12A
Power dissipation: 62W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP3N60C FQP3N60C ONSEMI fqp3n60c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 12A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 12A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP3N80C FQP3N80C ONSEMI FAIRS47784-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP45N15V2 FQP45N15V2 ONSEMI FQP45N15V2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP47P06 FQP47P06 ONSEMI FQP47P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP4N20L FQP4N20L ONSEMI FAIRS45973-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Mounting: THT
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15.2A
Case: TO220AB
Drain-source voltage: 200V
Drain current: 2.4A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)
3+112.81 грн
10+ 96.46 грн
12+ 86.9 грн
32+ 82.56 грн
250+ 80.82 грн
Мінімальне замовлення: 3
FQP50N06 FQP50N06 ONSEMI fqp50n06-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
FQP55N10 FQP55N10 ONSEMI fqp55n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; Idm: 220A; 155W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Pulsed drain current: 220A
Power dissipation: 155W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP6N40C FQP6N40C ONSEMI FAIRS46437-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.6A
Pulsed drain current: 24A
Power dissipation: 73W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP6N40CF FQP6N40CF ONSEMI FAIRS46437-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.6A
Pulsed drain current: 24A
Power dissipation: 73W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 257 шт:
термін постачання 14-21 дні (днів)
2+184.37 грн
10+ 112.81 грн
26+ 102.54 грн
500+ 99.07 грн
Мінімальне замовлення: 2
FQP7P06 FQP7P06 ONSEMI FQP7P06-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.95A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
2+140.38 грн
3+ 90.24 грн
10+ 69.52 грн
17+ 61.7 грн
45+ 59.09 грн
250+ 56.49 грн
Мінімальне замовлення: 2
FQP8N80C FQP8N80C ONSEMI FAIRS46449-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP8P10 FQP8P10 ONSEMI fqp8p10-d.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP9N30 ONSEMI fqp9n30-d.pdf FQP9N30 THT N channel transistors
товар відсутній
FQP9N90C FQP9N90C ONSEMI FQP9N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)
1+308.84 грн
6+ 206.66 грн
14+ 188.58 грн
500+ 183.36 грн
FQPF10N50CF FQPF10N50CF ONSEMI FAIRS46438-1.pdf?t.download=true&u=5oefqw fqpf10n50cf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.35A; Idm: 40A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.35A
Pulsed drain current: 40A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 610mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF11N40C FQPF11N40C ONSEMI FAIRS45968-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF11P06 FQPF11P06 ONSEMI fqpf11p06-d.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.08A; Idm: -34.4A; 30W
Mounting: THT
Kind of package: tube
Drain-source voltage: -60V
Drain current: -6.08A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -34.4A
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
FQPF13N06L FQPF13N06L ONSEMI fqpf13n06l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.1A
Pulsed drain current: 40A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF13N50CF FQPF13N50CF ONSEMI fqpf13n50cf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF15P12 FQPF15P12 ONSEMI fqp15p12-d.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF16N25C FQPF16N25C ONSEMI fqp16n25c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF17N40T FQPF17N40T ONSEMI fqpf17n40-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 38A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF19N10 FQPF19N10 ONSEMI FAIRS45527-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.6A; Idm: 54.4A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 54.4A
Drain-source voltage: 100V
Drain current: 9.6A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
кількість в упаковці: 1 шт
товар відсутній
FQPF19N20 FQPF19N20 ONSEMI FAIRS45975-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Pulsed drain current: 48A
Drain-source voltage: 200V
Drain current: 7.5A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
FQPF19N20C FQPF19N20C ONSEMI fqpf19n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)
3+127.28 грн
10+ 106.49 грн
15+ 70.39 грн
40+ 66.05 грн
500+ 64.31 грн
Мінімальне замовлення: 3
FQPF22N30 FQPF22N30 ONSEMI FAIRS45977-1.pdf?t.download=true&u=5oefqw fqpf22n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 56W
On-state resistance: 0.16Ω
Kind of package: tube
Drain current: 7.6A
Drain-source voltage: 300V
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
кількість в упаковці: 1 шт
товар відсутній
FQPF27N25 FQPF27N25 ONSEMI fqpf27n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Mounting: THT
Drain-source voltage: 250V
Drain current: 8.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
FQD7N30TM fqd7n30-d.pdf
Виробник: ONSEMI
FQD7N30TM SMD N channel transistors
товар відсутній
FQD7P06TM fqd7p06-d.pdf
Виробник: ONSEMI
FQD7P06TM SMD P channel transistors
товар відсутній
FQD7P20TM FQD7P20.pdf
FQD7P20TM
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2482 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+97.33 грн
5+ 69.49 грн
21+ 50.4 грн
56+ 46.93 грн
Мінімальне замовлення: 3
FQD8P10TM FQD8P10.pdf
FQD8P10TM
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2390 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
6+47.07 грн
25+ 41.15 грн
34+ 29.81 грн
93+ 28.16 грн
Мінімальне замовлення: 6
FQD8P10TM-F085 fqd8p10tm_f085-d.pdf
FQD8P10TM-F085
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
FQD9N25TM-F080 FQU9N25-D.PDF
FQD9N25TM-F080
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQH8N100C fqh8n100c-d.pdf
FQH8N100C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FQI13N50CTU FAIRS45953-1.pdf?t.download=true&u=5oefqw fqi13n50c-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 195W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI27N25TU FAIR-S-A0000097574-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
FQI27N25TU THT N channel transistors
товар відсутній
FQI4N80TU FAIRS46000-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI4N90TU ONSM-S-A0003584473-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Pulsed drain current: 16.8A
Power dissipation: 140W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI5N60CTU FAIRS45966-1.pdf?t.download=true&u=5oefqw fqi5n60c-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQI7N80TU fqi7n80-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQL40N50F fql40n50f-d.pdf
FQL40N50F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQN1N50CTA fqn1n50c-d.pdf
FQN1N50CTA
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
FQN1N60CTA fqn1n60c-d.pdf FAIRS46432-1.pdf?t.download=true&u=5oefqw
FQN1N60CTA
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQNL2N50BTA ONSM-S-A0003585504-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 1.5W
Case: TO92L
Gate-source voltage: ±30V
On-state resistance: 5.3Ω
Mounting: THT
Gate charge: 8nC
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP10N20C FAIRS45967-1.pdf?t.download=true&u=5oefqw
FQP10N20C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP11N40C FQP11N40C.pdf
FQP11N40C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+168.46 грн
3+ 150.71 грн
10+ 101.68 грн
28+ 95.59 грн
500+ 92.12 грн
Мінімальне замовлення: 2
FQP12P10 fqp12p10-d.pdf
FQP12P10
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 75W
Drain current: -8.1A
Kind of channel: enhanced
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Pulsed drain current: -46A
Gate charge: 27nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
FQP14N30 fqp14n30-d.pdf
FQP14N30
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP15P12 FAIR-S-A0002363799-1.pdf?t.download=true&u=5oefqw fqp15p12-d.pdf
FQP15P12
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP16N25 fqp16n25-d.pdf
FQP16N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP17P06 FQP17P06.pdf
FQP17P06
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP24N08 fqp24n08-d.pdf FAIRS45803-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
FQP24N08 THT N channel transistors
товар відсутній
FQP27P06 FQP27P06.pdf
FQP27P06
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 548 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+163.78 грн
10+ 132.66 грн
11+ 96.46 грн
29+ 91.25 грн
500+ 87.77 грн
Мінімальне замовлення: 2
FQP2N40-F080 fqp2n40-d.pdf
FQP2N40-F080
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FQP2N80 ONSM-S-A0003584912-1.pdf?t.download=true&u=5oefqw
FQP2N80
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 6.3Ω
Drain current: 1.52A
Drain-source voltage: 800V
Power dissipation: 85W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 9.6A
кількість в упаковці: 1 шт
товар відсутній
FQP32N20C FQP32N20C.pdf
FQP32N20C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; 156W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+102.88 грн
10+ 87.77 грн
13+ 79.95 грн
35+ 75.6 грн
250+ 73 грн
Мінімальне замовлення: 3
FQP34N20 ONSM-S-A0003585150-1.pdf?t.download=true&u=5oefqw
FQP34N20
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220-3
Drain-source voltage: 200V
Drain current: 20A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 180W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
FQP3N50C-F080 fqp3n50c-d.pdf
FQP3N50C-F080
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; Idm: 12A; 62W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.8A
Pulsed drain current: 12A
Power dissipation: 62W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP3N60C fqp3n60c-d.pdf
FQP3N60C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 12A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 12A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP3N80C FAIRS47784-1.pdf?t.download=true&u=5oefqw
FQP3N80C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP45N15V2 FQP45N15V2.pdf
FQP45N15V2
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP47P06 FQP47P06.pdf
FQP47P06
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP4N20L FAIRS45973-1.pdf?t.download=true&u=5oefqw
FQP4N20L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Mounting: THT
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15.2A
Case: TO220AB
Drain-source voltage: 200V
Drain current: 2.4A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
FQP4N80 fqp4n80-d.pdf
FQP4N80
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+112.81 грн
10+ 96.46 грн
12+ 86.9 грн
32+ 82.56 грн
250+ 80.82 грн
Мінімальне замовлення: 3
FQP50N06 fqp50n06-d.pdf
FQP50N06
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
FQP55N10 fqp55n10-d.pdf
FQP55N10
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; Idm: 220A; 155W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Pulsed drain current: 220A
Power dissipation: 155W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP6N40C FAIRS46437-1.pdf?t.download=true&u=5oefqw
FQP6N40C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.6A
Pulsed drain current: 24A
Power dissipation: 73W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP6N40CF FAIRS46437-1.pdf?t.download=true&u=5oefqw
FQP6N40CF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.6A; Idm: 24A; 73W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.6A
Pulsed drain current: 24A
Power dissipation: 73W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP6N80C FQP6N80C.pdf
FQP6N80C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 257 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+184.37 грн
10+ 112.81 грн
26+ 102.54 грн
500+ 99.07 грн
Мінімальне замовлення: 2
FQP7P06 FQP7P06-DTE.pdf
FQP7P06
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.95A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+140.38 грн
3+ 90.24 грн
10+ 69.52 грн
17+ 61.7 грн
45+ 59.09 грн
250+ 56.49 грн
Мінімальне замовлення: 2
FQP8N80C FAIRS46449-1.pdf?t.download=true&u=5oefqw
FQP8N80C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP8P10 fqp8p10-d.pdf
FQP8P10
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQP9N30 fqp9n30-d.pdf
Виробник: ONSEMI
FQP9N30 THT N channel transistors
товар відсутній
FQP9N90C FQP9N90C.pdf
FQP9N90C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+308.84 грн
6+ 206.66 грн
14+ 188.58 грн
500+ 183.36 грн
FQPF10N50CF FAIRS46438-1.pdf?t.download=true&u=5oefqw fqpf10n50cf-d.pdf
FQPF10N50CF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.35A; Idm: 40A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.35A
Pulsed drain current: 40A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 610mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF11N40C FAIRS45968-1.pdf?t.download=true&u=5oefqw
FQPF11N40C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF11P06 fqpf11p06-d.pdf
FQPF11P06
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.08A; Idm: -34.4A; 30W
Mounting: THT
Kind of package: tube
Drain-source voltage: -60V
Drain current: -6.08A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -34.4A
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
FQPF13N06L fqpf13n06l-d.pdf
FQPF13N06L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.1A
Pulsed drain current: 40A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF13N50CF fqpf13n50cf-d.pdf
FQPF13N50CF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF15P12 fqp15p12-d.pdf
FQPF15P12
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF16N25C fqp16n25c-d.pdf
FQPF16N25C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF17N40T fqpf17n40-d.pdf
FQPF17N40T
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 38A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQPF19N10 FAIRS45527-1.pdf?t.download=true&u=5oefqw
FQPF19N10
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.6A; Idm: 54.4A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 54.4A
Drain-source voltage: 100V
Drain current: 9.6A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
кількість в упаковці: 1 шт
товар відсутній
FQPF19N20 FAIRS45975-1.pdf?t.download=true&u=5oefqw
FQPF19N20
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Pulsed drain current: 48A
Drain-source voltage: 200V
Drain current: 7.5A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
FQPF19N20C fqpf19n20c-d.pdf
FQPF19N20C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+127.28 грн
10+ 106.49 грн
15+ 70.39 грн
40+ 66.05 грн
500+ 64.31 грн
Мінімальне замовлення: 3
FQPF22N30 FAIRS45977-1.pdf?t.download=true&u=5oefqw fqpf22n30-d.pdf
FQPF22N30
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 56W
On-state resistance: 0.16Ω
Kind of package: tube
Drain current: 7.6A
Drain-source voltage: 300V
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
кількість в упаковці: 1 шт
товар відсутній
FQPF27N25 fqpf27n25-d.pdf
FQPF27N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Mounting: THT
Drain-source voltage: 250V
Drain current: 8.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
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