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FQPF10N50CF Fairchild Semiconductor
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Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
на замовлення 67211 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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222+ | 94.9 грн |
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Технічний опис FQPF10N50CF Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 610mOhm @ 5A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V.
Інші пропозиції FQPF10N50CF за ціною від 138.69 грн до 222.78 грн
Фото | Назва | Виробник | Інформація |
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FQPF10N50CF | Виробник : onsemi / Fairchild |
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на замовлення 1983 шт: термін постачання 21-30 дні (днів) |
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FQPF10N50CF | Виробник : ON Semiconductor |
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товар відсутній |
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FQPF10N50CF | Виробник : ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.35A; Idm: 40A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.35A Pulsed drain current: 40A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 610mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FQPF10N50CF | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 5A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V |
товар відсутній |
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FQPF10N50CF | Виробник : ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.35A; Idm: 40A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.35A Pulsed drain current: 40A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 610mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |