| Фото | Назва | Виробник | Інформація |
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NTHL030N120M3S | onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET ELPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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NVBG030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Qualification: AEC-Q101 |
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NVBG030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 780 шт: термін постачання 21-31 дні (днів) |
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NVH4L030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 430 шт: термін постачання 21-31 дні (днів) |
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1SMA5921BT3 | onsemi |
Description: DIODE ZENER 6.8V 1.5W SMA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: SMA Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 5.2 V |
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| NCV91300MNWBTXG | onsemi |
Description: IC REG BUCK PROG 0.6V 3A 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 2.15MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 16-QFN (3x3) Synchronous Rectifier: Yes Voltage - Output (Max): 3.3V Voltage - Input (Min): 1.9V Voltage - Output (Min/Fixed): 0.6V Grade: Automotive |
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MM74HC244SJX | onsemi |
Description: IC BUFFER NON-INVERT 6V 20SOP Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOP |
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MM74HC244SJX | onsemi |
Description: IC BUFFER NON-INVERT 6V 20SOP Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOP |
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MC74LCX14DR2 | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Features: Schmitt Trigger Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.7V ~ 2.2V Input Logic Level - Low: 0.4V ~ 0.6V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 6325 шт: термін постачання 21-31 дні (днів) |
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MC74LCX14DT | onsemi |
Description: IC INVERTER 6CH 1-INP 14TSSOP Features: Schmitt Trigger Packaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2.2V Input Logic Level - Low: 0.4V ~ 0.6V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 3360 шт: термін постачання 21-31 дні (днів) |
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MC74LCX14D | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Features: Schmitt Trigger Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.7V ~ 2.2V Input Logic Level - Low: 0.4V ~ 0.6V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 3253 шт: термін постачання 21-31 дні (днів) |
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MC74LCX14MELG | onsemi |
Description: IC INVERTER 6CH 1-INP SOEIAJ-14 Features: Schmitt Trigger Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: SOEIAJ-14 Input Logic Level - High: 1.7V ~ 2.2V Input Logic Level - Low: 0.4V ~ 0.6V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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74LCX14SJX | onsemi |
Description: IC INVERTER Packaging: Bulk |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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| NXH80T120L3Q0P3G | onsemi |
Description: PIM GENERATION3 Q0PACK 1200V, 80 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A NTC Thermistor: Yes Supplier Device Package: 20-PIM/Q0PACK (55x32.5) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 188 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 18150 pF @ 20 V |
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| NXH450N65L4Q2F2PG | onsemi |
Description: 650V 450A 3-LEVEL NPC INVERTER M Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A NTC Thermistor: No Supplier Device Package: 36-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 167 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 365 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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| NXH450N65L4Q2F2S1G | onsemi |
Description: 120KW 1100V Q2PACK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A NTC Thermistor: No Supplier Device Package: 40-PIM/Q2PACK (107.2x47) IGBT Type: Field Stop Current - Collector (Ic) (Max): 167 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 365 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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NCV317BD2TR4G | onsemi |
Description: IC REG LIN POS ADJ 1.5A D2PAK-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -55°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Max): 37V Voltage - Output (Min/Fixed): 1.2V Grade: Automotive PSRR: 80dB ~ 65dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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NRVSRD620VCTT4G | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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NRVSRD620VCTT4G | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 39456 шт: термін постачання 21-31 дні (днів) |
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MPS2907ARLRM | onsemi |
Description: TRANS PNP 60V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
на замовлення 174000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5245B | onsemi |
Description: DIODE ZENER 15V 500MW SOD123 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
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MMSZ5245B | onsemi |
Description: DIODE ZENER 15V 500MW SOD123 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
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2SA2039-E | onsemi |
Description: TRANS PNP 50V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 360MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
на замовлення 322265 шт: термін постачання 21-31 дні (днів) |
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2SA2040-E | onsemi |
Description: TRANS PNP 50V 8A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 330MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 11718 шт: термін постачання 21-31 дні (днів) |
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LA5735M-TE-L-E | onsemi |
Description: IC REG BUCK ADJ 700MA 8MFP Packaging: Bulk Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 700mA (Switch) Operating Temperature: -30°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 32V Topology: Buck Supplier Device Package: 8-MFP Synchronous Rectifier: No Voltage - Output (Max): 32V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.23V |
на замовлення 1575 шт: термін постачання 21-31 дні (днів) |
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LV8013T-A-TLM-E | onsemi |
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP Packaging: Tape & Reel (TR) Package / Case: 24-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 75°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Rds On (Typ): 300mOhm Applications: DC Motors, General Purpose Current - Output / Channel: 1.2A Current - Peak Output: 2A, 3.8A Technology: DMOS Voltage - Load: 2V ~ 15V Supplier Device Package: 24-TSSOP Fault Protection: Over Temperature Load Type: Inductive |
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LV8013T-A-TLM-E | onsemi |
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP Packaging: Bulk Package / Case: 24-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 75°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Rds On (Typ): 300mOhm Applications: DC Motors, General Purpose Current - Output / Channel: 1.2A Current - Peak Output: 2A, 3.8A Technology: DMOS Voltage - Load: 2V ~ 15V Supplier Device Package: 24-TSSOP Fault Protection: Over Temperature Load Type: Inductive |
на замовлення 60854 шт: термін постачання 21-31 дні (днів) |
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FLZ12VC | onsemi |
Description: DIODE ZENER 12.1V 500MW SOD80 Packaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12.1 V Impedance (Max) (Zzt): 9.5 Ohms Supplier Device Package: SOD-80 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 133 nA @ 9 V |
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FLZ12VC | onsemi |
Description: DIODE ZENER 12.1V 500MW SOD80 Packaging: Cut Tape (CT) Tolerance: ±3% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12.1 V Impedance (Max) (Zzt): 9.5 Ohms Supplier Device Package: SOD-80 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 133 nA @ 9 V |
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FAN3227CMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 3A, 3A DigiKey Programmable: Not Verified |
на замовлення 12483 шт: термін постачання 21-31 дні (днів) |
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FAN3227CMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 3A, 3A DigiKey Programmable: Not Verified |
на замовлення 14908 шт: термін постачання 21-31 дні (днів) |
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FAN3223TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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FAN3228TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN3228TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting, Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NE5532D | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 8mA Slew Rate: 9V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 200 nA Voltage - Input Offset: 500 µV Supplier Device Package: 16-SOIC Number of Circuits: 2 Current - Output / Channel: 38 mA Voltage - Supply Span (Min): 6 V Voltage - Supply Span (Max): 40 V |
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| FNB51560T1 | onsemi |
Description: AC MOTOR CONTROLLER, 30A Packaging: Bulk Package / Case: 20-PowerDIP Module (1.220", 31.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 15 A Voltage: 600 V |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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1SMF16BT3 | onsemi |
Description: TVS DIODE 16VWM 26VC SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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1SMF16BT3G | onsemi |
Description: TVS ZENER 175W 16V SOD123FL Packaging: Tape & Reel (TR) |
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1SMF16BT1 | onsemi |
Description: TVS DIODE 16VWM 26VC SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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1SMF16BT1G | onsemi |
Description: TVS DIODE 16VWM 26VC SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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NRTS6100TFSTWG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
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NRTS6100TFSTWG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
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NRTS6100TFSTAG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
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NRTS6100TFSTAG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 1470 шт: термін постачання 21-31 дні (днів) |
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MBR8170TFSTWG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTWG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTXG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTXG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTBG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTBG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTAG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
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MBR8170TFSTAG | onsemi |
Description: DIODE SCHOTTKY 170V 8A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 237pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 170 V |
на замовлення 1390 шт: термін постачання 21-31 дні (днів) |
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NTTD4401FR2 | onsemi |
Description: MOSFET P-CH 20V 2.4A MICRO8 Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V |
на замовлення 5853 шт: термін постачання 21-31 дні (днів) |
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NRVTS5100ETFSTAG | onsemi |
Description: DIODE SCHOTTKY 100V 5A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
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NRVTS360ETFSTAG | onsemi |
Description: DIODE SCHOTTKY 60V 3A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NRVTS360ETFSTAG | onsemi |
Description: DIODE SCHOTTKY 60V 3A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NRTS6100TFSTXG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
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NRTS6100TFSTXG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
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NRTS6100TFSTBG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
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NRTS6100TFSTBG | onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товар відсутній |
| NTHL030N120M3S |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1384.86 грн |
| 30+ | 1079.44 грн |
| 120+ | 1015.95 грн |
| NVBG030N120M3S |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
товар відсутній
| NVBG030N120M3S |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
на замовлення 780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2552.61 грн |
| 10+ | 2189.98 грн |
| 100+ | 1922.22 грн |
| NVH4L030N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
на замовлення 430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2658.15 грн |
| 30+ | 2145.31 грн |
| 120+ | 2002.3 грн |
| 1SMA5921BT3 |
|
Виробник: onsemi
Description: DIODE ZENER 6.8V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 5.2 V
Description: DIODE ZENER 6.8V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 5.2 V
товар відсутній
| NCV91300MNWBTXG |
|
Виробник: onsemi
Description: IC REG BUCK PROG 0.6V 3A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 2.15MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 1.9V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Description: IC REG BUCK PROG 0.6V 3A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 2.15MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 1.9V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
товар відсутній
| MM74HC244SJX |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
товар відсутній
| MM74HC244SJX |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
товар відсутній
| MC74LCX14DR2 |
|
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 6325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2959+ | 6.96 грн |
| MC74LCX14DT |
|
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3360+ | 6.96 грн |
| MC74LCX14D |
|
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 3253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3253+ | 6.96 грн |
| MC74LCX14MELG |
|
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1158+ | 18.28 грн |
| 74LCX14SJX |
|
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 606+ | 34.81 грн |
| NXH80T120L3Q0P3G |
|
Виробник: onsemi
Description: PIM GENERATION3 Q0PACK 1200V, 80
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 188 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18150 pF @ 20 V
Description: PIM GENERATION3 Q0PACK 1200V, 80
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 188 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18150 pF @ 20 V
товар відсутній
| NXH450N65L4Q2F2PG |
|
Виробник: onsemi
Description: 650V 450A 3-LEVEL NPC INVERTER M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 36-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
Description: 650V 450A 3-LEVEL NPC INVERTER M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 36-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8897.2 грн |
| 10+ | 7930.87 грн |
| 36+ | 7641.46 грн |
| NXH450N65L4Q2F2S1G |
|
Виробник: onsemi
Description: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
Description: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9247 грн |
| 12+ | 8242.93 грн |
| NCV317BD2TR4G |
|
Виробник: onsemi
Description: IC REG LIN POS ADJ 1.5A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 1.5A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 829+ | 25.41 грн |
| NRVSRD620VCTT4G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.62 грн |
| 5000+ | 28.09 грн |
| 12500+ | 26.79 грн |
| 25000+ | 25.09 грн |
| NRVSRD620VCTT4G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 39456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.88 грн |
| 10+ | 58.29 грн |
| 100+ | 45.37 грн |
| 500+ | 36.09 грн |
| 1000+ | 29.4 грн |
| MPS2907ARLRM |
|
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6662+ | 3.48 грн |
| MMSZ5245B |
|
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
| MMSZ5245B |
|
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
| 2SA2039-E |
|
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 322265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 705+ | 30.35 грн |
| 2SA2040-E |
|
Виробник: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 11718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 857+ | 24.36 грн |
| LA5735M-TE-L-E |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 392+ | 53.6 грн |
| LV8013T-A-TLM-E |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
товар відсутній
| LV8013T-A-TLM-E |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
на замовлення 60854 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 137+ | 152.45 грн |
| FLZ12VC |
|
Виробник: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
товар відсутній
| FLZ12VC |
|
Виробник: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
товар відсутній
| FAN3227CMX |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 12483 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 64.07 грн |
| 5000+ | 59.33 грн |
| FAN3227CMX |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 14908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.5 грн |
| 10+ | 125.73 грн |
| 25+ | 118.65 грн |
| 100+ | 89.08 грн |
| 250+ | 77.94 грн |
| 500+ | 75.72 грн |
| 1000+ | 59.14 грн |
| FAN3223TMX-F085 |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| FAN3228TMX-F085 |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 86.47 грн |
| FAN3228TMX-F085 |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| NE5532D |
|
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
товар відсутній
| FNB51560T1 |
|
Виробник: onsemi
Description: AC MOTOR CONTROLLER, 30A
Packaging: Bulk
Package / Case: 20-PowerDIP Module (1.220", 31.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
Description: AC MOTOR CONTROLLER, 30A
Packaging: Bulk
Package / Case: 20-PowerDIP Module (1.220", 31.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 650.79 грн |
| 1SMF16BT3 |
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
| 1SMF16BT1 |
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
| 1SMF16BT1G |
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
| NRTS6100TFSTWG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
| NRTS6100TFSTWG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
| NRTS6100TFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
| NRTS6100TFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1470 шт:
термін постачання 21-31 дні (днів)| MBR8170TFSTWG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTWG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTXG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTXG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTBG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTBG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
| MBR8170TFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)| NTTD4401FR2 |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
на замовлення 5853 шт:
термін постачання 21-31 дні (днів)| NRVTS5100ETFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
| NRVTS360ETFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 11.6 грн |
| 3000+ | 9.98 грн |
| NRVTS360ETFSTAG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.91 грн |
| 12+ | 25.34 грн |
| 100+ | 17.6 грн |
| 500+ | 12.9 грн |
| NRTS6100TFSTXG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
| NRTS6100TFSTXG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
| NRTS6100TFSTBG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
| NRTS6100TFSTBG |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній