![FQP8P10 FQP8P10](https://media.digikey.com/Renders/Fairchild%20Semi%20Renders/261_TO-220-3.jpg)
FQP8P10 onsemi
![fqp8p10-d.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 85.19 грн |
10+ | 73.25 грн |
100+ | 57.13 грн |
500+ | 44.29 грн |
1000+ | 34.97 грн |
2000+ | 32.64 грн |
Відгуки про товар
Написати відгук
Технічний опис FQP8P10 onsemi
Description: MOSFET P-CH 100V 8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.
Інші пропозиції FQP8P10
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FQP8P10 | Виробник : ON Semiconductor / Fairchild |
![]() |
на замовлення 2666 шт: термін постачання 21-30 дні (днів) |
||
![]() |
FQP8P10 | Виробник : ON Semiconductor |
![]() |
товар відсутній |
|
![]() |
FQP8P10 | Виробник : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
FQP8P10 | Виробник : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |