| Фото | Назва | Виробник | Інформація |
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| FDMC2674 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 220V Drain current: 7A Pulsed drain current: 13.8A Power dissipation: 42W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 814mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC3020DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC3612-L701 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 15A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDMC4435BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Power dissipation: 31W Case: MLP8 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2976 шт: термін постачання 14-21 дні (днів) |
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| FDMC4D9P20X8 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -47A Pulsed drain current: -335A Power dissipation: 40W Case: PQFN8 Gate-source voltage: ±12V On-state resistance: 16.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDMC510P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8 Mounting: SMD Drain-source voltage: -20V Drain current: -18A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 116nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MLP8 кількість в упаковці: 1 шт |
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| FDMC510P-F106 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -50A; 41W; MLP8 Mounting: SMD Drain-source voltage: -20V Drain current: -18A On-state resistance: 12mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 116nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -50A Case: MLP8 кількість в упаковці: 1 шт |
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| FDMC5614P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Drain-source voltage: -60V Drain current: -13.5A On-state resistance: 168mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| FDMC610P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -80A Pulsed drain current: -200A Power dissipation: 48W Case: Power33 Gate-source voltage: ±8V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC6675BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -32A Mounting: SMD Case: WDFN8 кількість в упаковці: 1 шт |
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| FDMC6679AZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 кількість в упаковці: 3000 шт |
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| FDMC6686P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -377A Power dissipation: 40W Case: Power33 Gate-source voltage: ±8V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC7200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 1.9/2.2W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 35.5/18mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC7200S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18/13A Pulsed drain current: 40...27A Power dissipation: 1.9/2.9W Case: Power33 Gate-source voltage: ±20V On-state resistance: 30/13.1mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC7208S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: Power33 Drain-source voltage: 30/30V Drain current: 22/26A On-state resistance: 12.4/7.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.9W Gate charge: 18/36nC Kind of channel: enhanced Gate-source voltage: ±20/±12V кількість в упаковці: 1 шт |
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| FDMC7570S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PQFN8 Drain-source voltage: 25V Drain current: 40A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 59W кількість в упаковці: 1 шт |
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FDMC7660 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Gate charge: 86nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PQFN8 кількість в упаковці: 1 шт |
на замовлення 2154 шт: термін постачання 14-21 дні (днів) |
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| FDMC7660DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 78W; PQFN8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Gate charge: 76nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD Case: PQFN8 кількість в упаковці: 1 шт |
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| FDMC7660S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Kind of package: reel; tape Technology: PowerTrench® Power dissipation: 41W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD Case: Power33 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| FDMC7672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC7672S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 36W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC7680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8 Mounting: SMD Drain current: 18A On-state resistance: 9.5mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A Case: WDFN8 Drain-source voltage: 30V кількість в упаковці: 1 шт |
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FDMC7692 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 40A Power dissipation: 29W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2993 шт: термін постачання 14-21 дні (днів) |
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| FDMC7692S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 27W; MLP8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 27W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| FDMC7696 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 25W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 25W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 15.7mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC8010 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33 Power dissipation: 54W Case: Power33 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 75A On-state resistance: 2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 94nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A кількість в упаковці: 1 шт |
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| FDMC8010DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8 Power dissipation: 50W Case: PQFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 99A On-state resistance: 1.89mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 94nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 788A кількість в упаковці: 1 шт |
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| FDMC8015L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Power dissipation: 24W Case: WDFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 39mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A кількість в упаковці: 1 шт |
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| FDMC8030 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8 Power dissipation: 14W Case: WDFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 12A On-state resistance: 16mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 1 шт |
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| FDMC8097AC | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W Power dissipation: 1.9W Case: Power33 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150/-150V Drain current: 2.4/-0.9A On-state resistance: 2171/306mΩ Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 4/6.2nC Kind of channel: enhanced Gate-source voltage: ±20V; ±25V кількість в упаковці: 1 шт |
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| FDMC8200 | ONSEMI |
FDMC8200 Multi channel transistors |
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| FDMC8200S | ONSEMI |
FDMC8200S Multi channel transistors |
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| FDMC8321L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 49A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 61nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: Power33 кількість в упаковці: 1 шт |
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| FDMC8321LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 108A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Power dissipation: 56W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 320A Mounting: SMD Case: PQFN8 кількість в упаковці: 1 шт |
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| FDMC8327L | ONSEMI |
FDMC8327L SMD N channel transistors |
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| FDMC8360L | ONSEMI |
FDMC8360L SMD N channel transistors |
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| FDMC8360LET40 | ONSEMI |
FDMC8360LET40 SMD N channel transistors |
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FDMC8462 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 41W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| FDMC8554 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33 Mounting: SMD Kind of package: reel; tape Gate charge: 62nC Case: Power33 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Polarisation: unipolar Power dissipation: 41W Type of transistor: N-MOSFET On-state resistance: 7.1mΩ Drain current: 16.5A Drain-source voltage: 20V кількість в упаковці: 1 шт |
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| FDMC86012 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33 On-state resistance: 4.7mΩ Mounting: SMD Case: Power33 Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 230A Drain-source voltage: 30V Drain current: 88A Type of transistor: N-MOSFET Power dissipation: 54W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
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| FDMC86102 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 60A; 41W; Power33 Mounting: SMD Case: Power33 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 41W On-state resistance: 41mΩ Polarisation: unipolar Gate charge: 18nC Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 100V Drain current: 20A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| FDMC86102L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8 Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: MLP8 On-state resistance: 39mΩ Mounting: SMD Power dissipation: 41W Gate charge: 22nC Polarisation: unipolar Technology: PowerTrench® кількість в упаковці: 3000 шт |
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| FDMC86116LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8 Drain-source voltage: 100V Drain current: 7.5A On-state resistance: 178mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 15A Mounting: SMD Case: WDFN8 кількість в упаковці: 1 шт |
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| FDMC86139P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Kind of package: reel; tape Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.104Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 кількість в упаковці: 1 шт |
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| FDMC86160 | ONSEMI |
FDMC86160 SMD N channel transistors |
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| FDMC86160ET100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Pulsed drain current: 204A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC86183 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 189A; 52W; Power33 Mounting: SMD On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 189A Case: Power33 Drain-source voltage: 100V Drain current: 29A кількість в упаковці: 1 шт |
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| FDMC86184 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 36A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 54W Polarisation: unipolar Gate charge: 30nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 266A Mounting: SMD Case: Power33 кількість в упаковці: 1 шт |
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| FDMC8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 16A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Gate charge: 7.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: WDFN8 кількість в упаковці: 1 шт |
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| FDMC86240 | ONSEMI |
FDMC86240 SMD N channel transistors |
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| FDMC86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8 Kind of package: reel; tape Drain-source voltage: 150V Drain current: 9.4A On-state resistance: 254mΩ Type of transistor: N-MOSFET Power dissipation: 26W Polarisation: unipolar Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: WDFN8 кількість в упаковці: 1 шт |
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| FDMC86248 | ONSEMI |
FDMC86248 SMD N channel transistors |
товар відсутній |
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| FDMC86259P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33 Kind of package: reel; tape Drain-source voltage: -150V Drain current: -13A On-state resistance: 178mΩ Type of transistor: P-MOSFET Power dissipation: 62W Polarisation: unipolar Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -20A Mounting: SMD Case: Power33 кількість в упаковці: 1 шт |
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| FDMC86260ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Pulsed drain current: 116A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMC86261P | ONSEMI |
FDMC86261P SMD P channel transistors |
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| FDMC86265P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -1.65A; Idm: -9A; 16W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: -1.65A On-state resistance: 2.2Ω Gate charge: 4nC Case: Power33 Kind of channel: enhanced Power dissipation: 16W Gate-source voltage: ±25V Pulsed drain current: -9A Type of transistor: P-MOSFET Drain-source voltage: -150V кількість в упаковці: 1 шт |
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| FDMC86320 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Pulsed drain current: 50A Power dissipation: 40W Gate charge: 41nC Polarisation: unipolar Drain current: 22A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: Power33 On-state resistance: 18mΩ Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 1 шт |
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FDMC86324 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Power dissipation: 41W Gate charge: 18nC Polarisation: unipolar Technology: PowerTrench® Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PQFN8 On-state resistance: 40mΩ Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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| FDMC86340 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 200A Power dissipation: 54W Gate charge: 53nC Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: Power33 On-state resistance: 11mΩ кількість в упаковці: 1 шт |
товар відсутній |
| FDMC2674 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC3020DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC3612 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC3612-L701 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC4435BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2976 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 101.07 грн |
| 5+ | 58.3 грн |
| 24+ | 43.45 грн |
| 65+ | 41.1 грн |
| 3000+ | 40.5 грн |
| FDMC4D9P20X8 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
Gate-source voltage: ±12V
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
Gate-source voltage: ±12V
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC510P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MLP8
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MLP8
кількість в упаковці: 1 шт
товар відсутній
| FDMC510P-F106 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -50A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 12mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -50A
Case: MLP8
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -50A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 12mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -50A
Case: MLP8
кількість в упаковці: 1 шт
товар відсутній
| FDMC5614P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Drain-source voltage: -60V
Drain current: -13.5A
On-state resistance: 168mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Drain-source voltage: -60V
Drain current: -13.5A
On-state resistance: 168mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| FDMC610P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -80A
Pulsed drain current: -200A
Power dissipation: 48W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -80A
Pulsed drain current: -200A
Power dissipation: 48W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC6675BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -32A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -32A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC6679AZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
кількість в упаковці: 3000 шт
товар відсутній
| FDMC6686P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -377A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -377A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC7200 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 1.9/2.2W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 35.5/18mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 1.9/2.2W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 35.5/18mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC7200S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18/13A
Pulsed drain current: 40...27A
Power dissipation: 1.9/2.9W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 30/13.1mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18/13A
Pulsed drain current: 40...27A
Power dissipation: 1.9/2.9W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 30/13.1mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC7208S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: Power33
Drain-source voltage: 30/30V
Drain current: 22/26A
On-state resistance: 12.4/7.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.9W
Gate charge: 18/36nC
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: Power33
Drain-source voltage: 30/30V
Drain current: 22/26A
On-state resistance: 12.4/7.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.9W
Gate charge: 18/36nC
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
кількість в упаковці: 1 шт
товар відсутній
| FDMC7570S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PQFN8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PQFN8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
кількість в упаковці: 1 шт
товар відсутній
| FDMC7660 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 86nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 86nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
кількість в упаковці: 1 шт
на замовлення 2154 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.96 грн |
| 5+ | 100.17 грн |
| 13+ | 79.95 грн |
| 35+ | 75.6 грн |
| 500+ | 73 грн |
| FDMC7660DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 78W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Gate charge: 76nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PQFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 78W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Gate charge: 76nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PQFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC7660S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Kind of package: reel; tape
Technology: PowerTrench®
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: Power33
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Kind of package: reel; tape
Technology: PowerTrench®
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: Power33
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| FDMC7672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC7672S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC7680 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8
Mounting: SMD
Drain current: 18A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Case: WDFN8
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8
Mounting: SMD
Drain current: 18A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Case: WDFN8
Drain-source voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
| FDMC7692 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2993 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.91 грн |
| 5+ | 58.03 грн |
| 24+ | 43.45 грн |
| 64+ | 40.84 грн |
| FDMC7692S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 27W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 27W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 27W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 27W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| FDMC7696 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 25W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 25W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 25W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 25W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC8010 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33
Power dissipation: 54W
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 75A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33
Power dissipation: 54W
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 75A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
товар відсутній
| FDMC8010DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Power dissipation: 50W
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 99A
On-state resistance: 1.89mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 788A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Power dissipation: 50W
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 99A
On-state resistance: 1.89mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 788A
кількість в упаковці: 1 шт
товар відсутній
| FDMC8015L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Power dissipation: 24W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Power dissipation: 24W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
кількість в упаковці: 1 шт
товар відсутній
| FDMC8030 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Power dissipation: 14W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Power dissipation: 14W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
товар відсутній
| FDMC8097AC |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Power dissipation: 1.9W
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
On-state resistance: 2171/306mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 4/6.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V; ±25V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Power dissipation: 1.9W
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
On-state resistance: 2171/306mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 4/6.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V; ±25V
кількість в упаковці: 1 шт
товар відсутній
| FDMC8321L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 49A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: Power33
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 49A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: Power33
кількість в упаковці: 1 шт
товар відсутній
| FDMC8321LDC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 108A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 56W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Mounting: SMD
Case: PQFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 108A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 56W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Mounting: SMD
Case: PQFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC8462 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| FDMC8554 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Case: Power33
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Polarisation: unipolar
Power dissipation: 41W
Type of transistor: N-MOSFET
On-state resistance: 7.1mΩ
Drain current: 16.5A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Case: Power33
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Polarisation: unipolar
Power dissipation: 41W
Type of transistor: N-MOSFET
On-state resistance: 7.1mΩ
Drain current: 16.5A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
| FDMC86012 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33
On-state resistance: 4.7mΩ
Mounting: SMD
Case: Power33
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 230A
Drain-source voltage: 30V
Drain current: 88A
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33
On-state resistance: 4.7mΩ
Mounting: SMD
Case: Power33
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 230A
Drain-source voltage: 30V
Drain current: 88A
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| FDMC86102 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 60A; 41W; Power33
Mounting: SMD
Case: Power33
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 41W
On-state resistance: 41mΩ
Polarisation: unipolar
Gate charge: 18nC
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Drain current: 20A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 60A; 41W; Power33
Mounting: SMD
Case: Power33
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 41W
On-state resistance: 41mΩ
Polarisation: unipolar
Gate charge: 18nC
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Drain current: 20A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| FDMC86102L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MLP8
On-state resistance: 39mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 22nC
Polarisation: unipolar
Technology: PowerTrench®
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MLP8
On-state resistance: 39mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 22nC
Polarisation: unipolar
Technology: PowerTrench®
кількість в упаковці: 3000 шт
товар відсутній
| FDMC86116LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Drain-source voltage: 100V
Drain current: 7.5A
On-state resistance: 178mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Drain-source voltage: 100V
Drain current: 7.5A
On-state resistance: 178mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC86139P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.104Ω
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.104Ω
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC86160ET100 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Pulsed drain current: 204A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Pulsed drain current: 204A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC86183 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 189A; 52W; Power33
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 189A
Case: Power33
Drain-source voltage: 100V
Drain current: 29A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 189A; 52W; Power33
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 189A
Case: Power33
Drain-source voltage: 100V
Drain current: 29A
кількість в упаковці: 1 шт
товар відсутній
| FDMC86184 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 266A
Mounting: SMD
Case: Power33
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 266A
Mounting: SMD
Case: Power33
кількість в упаковці: 1 шт
товар відсутній
| FDMC8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC86244 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 9.4A
On-state resistance: 254mΩ
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 9.4A
On-state resistance: 254mΩ
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
товар відсутній
| FDMC86259P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Kind of package: reel; tape
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Kind of package: reel; tape
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
кількість в упаковці: 1 шт
товар відсутній
| FDMC86260ET150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC86265P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.65A; Idm: -9A; 16W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.65A
On-state resistance: 2.2Ω
Gate charge: 4nC
Case: Power33
Kind of channel: enhanced
Power dissipation: 16W
Gate-source voltage: ±25V
Pulsed drain current: -9A
Type of transistor: P-MOSFET
Drain-source voltage: -150V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.65A; Idm: -9A; 16W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.65A
On-state resistance: 2.2Ω
Gate charge: 4nC
Case: Power33
Kind of channel: enhanced
Power dissipation: 16W
Gate-source voltage: ±25V
Pulsed drain current: -9A
Type of transistor: P-MOSFET
Drain-source voltage: -150V
кількість в упаковці: 1 шт
товар відсутній
| FDMC86320 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Pulsed drain current: 50A
Power dissipation: 40W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power33
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Pulsed drain current: 50A
Power dissipation: 40W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power33
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| FDMC86324 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Power dissipation: 41W
Gate charge: 18nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Power dissipation: 41W
Gate charge: 18nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| FDMC86340 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 54W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power33
On-state resistance: 11mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 54W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power33
On-state resistance: 11mΩ
кількість в упаковці: 1 шт
товар відсутній