FDMC7200 onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 2705 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 53.41 грн |
10+ | 45.34 грн |
100+ | 34.78 грн |
500+ | 25.8 грн |
1000+ | 20.64 грн |
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Технічний опис FDMC7200 onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Інші пропозиції FDMC7200
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDMC7200 | Виробник : ON Semiconductor / Fairchild | MOSFET 30V Dual N-Channel PowerTrench MOSFET |
на замовлення 3830 шт: термін постачання 21-30 дні (днів) |
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FDMC7200 | Виробник : ON Semiconductor | Trans MOSFET N-CH 30V 6A/8A 8-Pin WDFN EP T/R |
товар відсутній |
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FDMC7200 | Виробник : ON Semiconductor | Trans MOSFET N-CH 30V 6A/8A 8-Pin WDFN EP T/R |
товар відсутній |
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FDMC7200 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 1.9/2.2W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 35.5/18mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDMC7200 | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
товар відсутній |
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FDMC7200 | Виробник : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
товар відсутній |
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FDMC7200 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 1.9/2.2W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 35.5/18mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |