| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQPF5N50CYDTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF5N90 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF630 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Drain-source voltage: 200V Drain current: 4A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 25.2A кількість в упаковці: 1 шт |
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FQPF6N80CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF6N80T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.1A Pulsed drain current: 13.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24.7A; Idm: 140A; 62W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24.7A Pulsed drain current: 140A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.7A Pulsed drain current: 17.2A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF7P20 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF85N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 37.5A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 32 шт: термін постачання 14-21 дні (днів) |
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FQPF8N80CYDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 59W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 59W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF9N25C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 35.2A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQS4901TF | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
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FQT13N06LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQT13N06TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQT1N60CTF-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQT1N80TF-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
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| FQT2P25TF | ONSEMI |
FQT2P25TF SMD P channel transistors |
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| FQT3P20TF | ONSEMI |
FQT3P20TF SMD P channel transistors |
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FQT4N20LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3471 шт: термін постачання 14-21 дні (днів) |
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FQT4N25TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3.3A Case: SOT223 Drain-source voltage: 250V Drain current: 0.66A On-state resistance: 1.75Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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FQT5P10TF | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -800mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQT7N10LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.36A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1020 шт: термін постачання 14-21 дні (днів) |
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| FQU12N20TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU13N06LTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 44A Power dissipation: 28W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQU17P06TU | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: IPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 130 шт: термін постачання 14-21 дні (днів) |
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| FQU1N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Pulsed drain current: 4A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Gate charge: 6.2nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU1N80TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Pulsed drain current: 4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Gate charge: 7.2nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU2N100TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω кількість в упаковці: 1 шт |
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| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω кількість в упаковці: 1 шт |
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| FQU3N50CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 10A; 35W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 10A Power dissipation: 35W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU4N50TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.64A Pulsed drain current: 10.4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU5N40TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.15A; Idm: 13.6A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.15A Pulsed drain current: 13.6A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU5N50CTU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU5N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQU5P20TU | ONSEMI |
FQU5P20TU THT P channel transistors |
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| FQU9N25TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FR014H5JZ | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection Max. forward impulse current: 0.8A Breakdown voltage: 30V Kind of package: reel; tape Type of diode: diode arrays Features of semiconductor devices: ESD protection Mounting: SMD Case: WDFN8 кількість в упаковці: 1 шт |
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| FS8G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| FS8J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| FS8K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| FS8M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Case: TO277 Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| FSA1153UCX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WLCSP12; 2.7÷5.5VDC; reel,tape; OUT: DP3T Technology: CMOS; TTL Case: WLCSP12 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 35µA Number of channels: 1 Supply voltage: 2.7...5.5V DC Type of integrated circuit: analog switch Kind of output: DP3T кількість в упаковці: 1 шт |
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FSA1156P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷5.5VDC; reel,tape; 1uA Technology: CMOS; TTL Case: SC70-6; SC88 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Number of channels: 1 Quiescent current: 1µA Kind of output: SPST-NO кількість в упаковці: 3000 шт |
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| FSA1208BQX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO Supply voltage: 2.3...4.3V DC Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: analog switch Number of channels: 8 Quiescent current: 1µA Kind of output: 8PST-NO Kind of package: reel; tape Technology: CMOS; TTL Case: MLP20 кількість в упаковці: 3000 шт |
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| FSA1256AL8X | ONSEMI |
FSA1256AL8X Analog multiplexers and switches |
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| FSA1256L8X | ONSEMI |
FSA1256L8X Analog multiplexers and switches |
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| FSA1257L8X | ONSEMI |
FSA1257L8X Analog multiplexers and switches |
товар відсутній |
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| FSA1259AK8X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; US8; 1.65÷5.5VDC; reel,tape; CMOS,TTL Case: US8 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Kind of output: SPST-NO x2 Technology: CMOS; TTL Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch кількість в упаковці: 1 шт |
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| FSA2147K8X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MO187,US8; 2.7÷4.3VDC; reel,tape; 15uA Operating temperature: -40...85°C Mounting: SMD Kind of output: DPST - NO Kind of package: reel; tape Technology: CMOS; TTL Case: MO187; US8 Supply voltage: 2.7...4.3V DC Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 15µA кількість в упаковці: 3000 шт |
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| FSA2257L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA Mounting: SMD Case: MicroPak10 Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 1µA Kind of output: SPDT x2 Kind of package: reel; tape Technology: CMOS; TTL Supply voltage: 1.65...5.5V DC кількість в упаковці: 5000 шт |
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| FSA2258L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2 Supply voltage: 1.65...4.3V DC Operating temperature: -40...85°C Mounting: SMD Kind of output: SPDT x2 Technology: CMOS; TTL Case: MicroPak10 Type of integrated circuit: analog switch Number of channels: 2 кількість в упаковці: 1 шт |
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| FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2 Case: UMLP10 Supply voltage: 1.65...4.4V DC Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Technology: CMOS; TTL Mounting: SMD Operating temperature: -40...85°C кількість в упаковці: 5000 шт |
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| FSA2268L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Technology: TTL Case: MicroPak10 Supply voltage: 1.65...4.3V DC кількість в упаковці: 5000 шт |
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| FSA2268UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 500nA Kind of output: SPDT x2 Technology: TTL Case: UMLP10 Supply voltage: 1.65...4.3V DC кількість в упаковці: 5000 шт |
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| FSA2269L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Technology: TTL Case: MicroPak10 Supply voltage: 1.65...4.5V DC Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 500nA Kind of output: SPDT x2 кількість в упаковці: 5000 шт |
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| FSA2275AUMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.5...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 кількість в упаковці: 5000 шт |
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| FSA2275UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.5...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 кількість в упаковці: 5000 шт |
товар відсутній |
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| FSA2276UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 кількість в упаковці: 5000 шт |
товар відсутній |
| FQPF5N50CYDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF5N90 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF630 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 4A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 25.2A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4A; Idm: 25.2A; 38W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 4A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 25.2A
кількість в упаковці: 1 шт
товар відсутній
| FQPF6N80CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF6N80T |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF70N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24.7A; Idm: 140A; 62W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24.7A
Pulsed drain current: 140A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24.7A; Idm: 140A; 62W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24.7A
Pulsed drain current: 140A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF7N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.7A
Pulsed drain current: 17.2A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.7A; Idm: 17.2A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.7A
Pulsed drain current: 17.2A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF7P20 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF85N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37.5A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37.5A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.29 грн |
| 3+ | 205.35 грн |
| 7+ | 152.45 грн |
| 19+ | 144.61 грн |
| FQPF8N80CYDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 59W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 59W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 59W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 59W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF9N25C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 35.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 35.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF9N90CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQS4901TF |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQT13N06LTF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQT13N06TF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQT1N60CTF-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQT1N80TF-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| FQT4N20LTF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3471 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.92 грн |
| 10+ | 47.4 грн |
| 25+ | 38.5 грн |
| 35+ | 29.88 грн |
| 95+ | 28.22 грн |
| 1000+ | 26.83 грн |
| FQT4N25TF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3.3A
Case: SOT223
Drain-source voltage: 250V
Drain current: 0.66A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3.3A
Case: SOT223
Drain-source voltage: 250V
Drain current: 0.66A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| FQT5P10TF |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -800mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -800mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQT7N10LTF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1020 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.63 грн |
| 25+ | 39.35 грн |
| 37+ | 27.56 грн |
| 101+ | 26.06 грн |
| FQU12N20TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU13N06LTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU17P06TU |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 130 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 57.99 грн |
| 20+ | 50.61 грн |
| 23+ | 42.69 грн |
| 62+ | 40.07 грн |
| FQU1N60CTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Gate charge: 6.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Pulsed drain current: 4A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Gate charge: 6.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU1N80TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Pulsed drain current: 4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Gate charge: 7.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Pulsed drain current: 4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Gate charge: 7.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU2N100TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU2N90TU-AM002 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
товар відсутній
| FQU2N90TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
кількість в упаковці: 1 шт
товар відсутній
| FQU3N50CTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 10A; 35W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 10A
Power dissipation: 35W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 10A; 35W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 10A
Power dissipation: 35W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU4N50TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU5N40TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.15A; Idm: 13.6A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.15A
Pulsed drain current: 13.6A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.15A; Idm: 13.6A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.15A
Pulsed drain current: 13.6A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU5N50CTU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU5N60CTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQU9N25TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FR014H5JZ |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection
Max. forward impulse current: 0.8A
Breakdown voltage: 30V
Kind of package: reel; tape
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection
Max. forward impulse current: 0.8A
Breakdown voltage: 30V
Kind of package: reel; tape
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: WDFN8
кількість в упаковці: 1 шт
товар відсутній
| FS8G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| FS8J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| FS8K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| FS8M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; TO277; Ufmax: 0.845V; Ifsm: 230A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| FSA1153UCX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WLCSP12; 2.7÷5.5VDC; reel,tape; OUT: DP3T
Technology: CMOS; TTL
Case: WLCSP12
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 35µA
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WLCSP12; 2.7÷5.5VDC; reel,tape; OUT: DP3T
Technology: CMOS; TTL
Case: WLCSP12
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 35µA
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
кількість в упаковці: 1 шт
товар відсутній
| FSA1156P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷5.5VDC; reel,tape; 1uA
Technology: CMOS; TTL
Case: SC70-6; SC88
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 1µA
Kind of output: SPST-NO
кількість в упаковці: 3000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6,SC88; 1.65÷5.5VDC; reel,tape; 1uA
Technology: CMOS; TTL
Case: SC70-6; SC88
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 1µA
Kind of output: SPST-NO
кількість в упаковці: 3000 шт
товар відсутній
| FSA1208BQX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Supply voltage: 2.3...4.3V DC
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: analog switch
Number of channels: 8
Quiescent current: 1µA
Kind of output: 8PST-NO
Kind of package: reel; tape
Technology: CMOS; TTL
Case: MLP20
кількість в упаковці: 3000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Supply voltage: 2.3...4.3V DC
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: analog switch
Number of channels: 8
Quiescent current: 1µA
Kind of output: 8PST-NO
Kind of package: reel; tape
Technology: CMOS; TTL
Case: MLP20
кількість в упаковці: 3000 шт
товар відсутній
| FSA1259AK8X |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; US8; 1.65÷5.5VDC; reel,tape; CMOS,TTL
Case: US8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Kind of output: SPST-NO x2
Technology: CMOS; TTL
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; US8; 1.65÷5.5VDC; reel,tape; CMOS,TTL
Case: US8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Kind of output: SPST-NO x2
Technology: CMOS; TTL
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
кількість в упаковці: 1 шт
товар відсутній
| FSA2147K8X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MO187,US8; 2.7÷4.3VDC; reel,tape; 15uA
Operating temperature: -40...85°C
Mounting: SMD
Kind of output: DPST - NO
Kind of package: reel; tape
Technology: CMOS; TTL
Case: MO187; US8
Supply voltage: 2.7...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 15µA
кількість в упаковці: 3000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MO187,US8; 2.7÷4.3VDC; reel,tape; 15uA
Operating temperature: -40...85°C
Mounting: SMD
Kind of output: DPST - NO
Kind of package: reel; tape
Technology: CMOS; TTL
Case: MO187; US8
Supply voltage: 2.7...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 15µA
кількість в упаковці: 3000 шт
товар відсутній
| FSA2257L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: MicroPak10
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 1µA
Kind of output: SPDT x2
Kind of package: reel; tape
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: MicroPak10
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 1µA
Kind of output: SPDT x2
Kind of package: reel; tape
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
кількість в упаковці: 5000 шт
товар відсутній
| FSA2258L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2
Supply voltage: 1.65...4.3V DC
Operating temperature: -40...85°C
Mounting: SMD
Kind of output: SPDT x2
Technology: CMOS; TTL
Case: MicroPak10
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2
Supply voltage: 1.65...4.3V DC
Operating temperature: -40...85°C
Mounting: SMD
Kind of output: SPDT x2
Technology: CMOS; TTL
Case: MicroPak10
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 1 шт
товар відсутній
| FSA2259UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -40...85°C
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -40...85°C
кількість в упаковці: 5000 шт
товар відсутній
| FSA2268L10X |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: TTL
Case: MicroPak10
Supply voltage: 1.65...4.3V DC
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: TTL
Case: MicroPak10
Supply voltage: 1.65...4.3V DC
кількість в упаковці: 5000 шт
товар відсутній
| FSA2268UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
Technology: TTL
Case: UMLP10
Supply voltage: 1.65...4.3V DC
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
Technology: TTL
Case: UMLP10
Supply voltage: 1.65...4.3V DC
кількість в упаковці: 5000 шт
товар відсутній
| FSA2269L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: TTL
Case: MicroPak10
Supply voltage: 1.65...4.5V DC
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: TTL
Case: MicroPak10
Supply voltage: 1.65...4.5V DC
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
кількість в упаковці: 5000 шт
товар відсутній
| FSA2275AUMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 5000 шт
товар відсутній
| FSA2275UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 5000 шт
товар відсутній
| FSA2276UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 5000 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
кількість в упаковці: 5000 шт
товар відсутній