FDMC8097AC onsemi / Fairchild
на замовлення 1560 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 315.47 грн |
| 10+ | 261.27 грн |
| 100+ | 183.29 грн |
| 500+ | 163.08 грн |
| 1000+ | 135.9 грн |
| 3000+ | 129.63 грн |
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Технічний опис FDMC8097AC onsemi / Fairchild
Description: MOSFET N/P-CH 150V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V, Rds On (Max) @ Id, Vgs: 155mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Інші пропозиції FDMC8097AC за ціною від 154.26 грн до 323.41 грн
| Фото | Назва | Виробник | Інформація |
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FDMC8097AC | Виробник : onsemi |
 Description: MOSFET N/P-CH 150VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
на замовлення 1888 шт: термін постачання 21-31 дні (днів) |
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FDMC8097AC | Виробник : ON Semiconductor |
Trans MOSFET N/P-CH 150V 2.4A/0.9A 8-Pin Power 33 EP T/R |
товар відсутній |
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| FDMC8097AC | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W Power dissipation: 1.9W Case: Power33 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150/-150V Drain current: 2.4/-0.9A On-state resistance: 2171/306mΩ Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 4/6.2nC Kind of channel: enhanced Gate-source voltage: ±20V; ±25V кількість в упаковці: 1 шт |
товар відсутній |
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FDMC8097AC | Виробник : onsemi |
Description: MOSFET N/P-CH 150V Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
товар відсутній |
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| FDMC8097AC | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W Power dissipation: 1.9W Case: Power33 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150/-150V Drain current: 2.4/-0.9A On-state resistance: 2171/306mΩ Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 4/6.2nC Kind of channel: enhanced Gate-source voltage: ±20V; ±25V |
товар відсутній |