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IXG100IF1200HFIXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
товар відсутній
IXG100NA60UIXYSMODULE
на замовлення 80 шт:
термін постачання 14-28 дні (днів)
IXG50I4500KNIXYSDescription: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
товар відсутній
IXG50I4500KNIXYSIGBTs Disc IGBT NPT-Very Hi Voltage ISOPLUS264
товар відсутній
IXG611P1IXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8DIP
товар відсутній
IXG611S1IXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
товар відсутній
IXG611S1T/RIXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
товар відсутній
IXG70IF1200NAIXYSDescription: IGBT MODULE - OTHERS SMPD-B
товар відсутній
IXG70IF1200NAIXYSIGBT Modules IGBT MODULE - OTHERS
товар відсутній
IXG70IF1200NAIXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXG70IF1200NAIXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
товар відсутній
IXGA 15N120CIXYSLittelfuse
товар відсутній
IXGA10N60
Код товару: 98637		Транзистори > IGBT
товар відсутній
IXGA10N60IXYSLittelfuse
товар відсутній
IXGA120N30TCIXYSDescription: IGBT 300V 120A 250W TO263AA
товар відсутній
IXGA12N100IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGA12N100IXYSDescription: IGBT 1000V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N100AIXYSIGBT Transistors
товар відсутній
IXGA12N120A2IXYSIGBT Transistors 24 Amps 1200V 2.7 Rds
товар відсутній
IXGA12N120A2IXYSDescription: IGBT 1200V 24A 75W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/680ns
Switching Energy: 5.4mJ (off)
Test Condition: 960V, 12A, 100Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
товар відсутній
IXGA12N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Case: TO263
Gate charge: 20.4nC
Technology: GenX3™; PT
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IXGA12N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Case: TO263
Gate charge: 20.4nC
Technology: GenX3™; PT
Mounting: SMD
товар відсутній
IXGA12N120A3IXYSDescription: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
IXGA12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA12N120A3IXYSIGBTs 1200V, 12A IGBT; G Series
на замовлення 579 шт:
термін постачання 21-30 дні (днів)
1+345.22 грн
10+ 299.07 грн
50+ 220.7 грн
100+ 201.72 грн
250+ 195.39 грн
1000+ 189.77 грн
IXGA12N120A3-TRLIXYSDescription: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
IXGA12N120A3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 22A 100W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA12N120A3-TRLIXYSIGBT Transistors IXGA12N120A3 TRL
товар відсутній
IXGA12N60BIXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N60BD1IXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
IXGA12N60CIXYSIGBT Transistors 24 Amps 600V 2.7 Rds
товар відсутній
IXGA12N60CIXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N60CD1IXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N60CD1IXYSIGBTs 24 Amps 600V 2.7 Rds
товар відсутній
IXGA150N30TCIXYSDescription: IGBT 300V 150A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: TO-263AA
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGA15N100CIXYSIGBTs 30 Amps 1000V 3.5 Rds
товар відсутній
IXGA15N100CIXYSDescription: IGBT 1000V 30A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 850µJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGA15N120BIXYSDescription: IGBT 1200V 30A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGA15N120BLittelfuseTrans IGBT Chip N-CH 1200V 30A 150000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXGA15N120BIXYSIGBTs 30 Amps 1200V 3.2 Rds
товар відсутній
IXGA16N60B2IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60C2IXYSIGBT Transistors 16 Amps 600V 3.0V Rds
товар відсутній
IXGA16N60C2IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3.0V Rds
товар відсутній
IXGA16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA20N100IXYSDescription: IGBT 1000V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGA20N100IXYSIGBT Transistors 40 Amps 1000V 3 Rds
товар відсутній
IXGA20N100-TRLLittelfuseLittelfuse DISC IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXGA20N120LittelfuseTrans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXGA20N120IXYSDescription: IGBT 1200V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGA20N120IXYSIGBTs 40 Amps 1200V 2.5 Rds
товар відсутній
IXGA20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
300+286.18 грн
Мінімальне замовлення: 300
IXGA20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120A3IXYSDescription: IGBT PT 1200V 40A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
1+494.96 грн
50+ 380.86 грн
100+ 340.77 грн
500+ 282.17 грн
IXGA20N120A3IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
на замовлення 748 шт:
термін постачання 21-30 дні (днів)
1+539.56 грн
10+ 489.82 грн
50+ 347.91 грн
100+ 326.13 грн
250+ 319.1 грн
500+ 292.39 грн
1000+ 260.06 грн
IXGA20N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 14-21 дні (днів)
1+472.13 грн
3+ 409.65 грн
4+ 316.29 грн
9+ 299.59 грн
IXGA20N120A3
Код товару: 56134		IXYSТранзистори > IGBT
Корпус: TO-263
Vces: 1200 V
Vce: 2,5 V
Ic 25: 40 A
Ic 100: 20 A
Pd 25: 180 W
td(on)/td(off) 100-150 град: 16/290
товар відсутній
IXGA20N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
2+393.44 грн
3+ 328.73 грн
4+ 263.57 грн
9+ 249.66 грн
Мінімальне замовлення: 2
IXGA20N120A3-TRLIXYSIGBTs IXGA20N120A3 TRL
товар відсутній
IXGA20N120A3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA20N120A3-TRLIXYSDescription: IXGA20N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
IXGA20N120BIXYSDescription: IGBT 1200V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
товар відсутній
IXGA20N120BIXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
товар відсутній
IXGA20N120B3IXYSDescription: IGBT 1200V 36A 180W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
товар відсутній
IXGA20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120B3IXYSIGBT Transistors GenX3 1200V IGBTs
товар відсутній
IXGA20N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
товар відсутній
IXGA20N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
товар відсутній
IXGA20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120B3-TRLIXYSDescription: IXGA20N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
товар відсутній
IXGA20N120B3-TRLIXYSIGBTs IXGA20N120B3 TRL
товар відсутній
IXGA20N250HVIXYSDescription: DISC IGBT NPT-VERY HI VOLTAGE TO
товар відсутній
IXGA20N250HVIXYSIGBTs TO263 2500V 30A IGBT
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+4434.56 грн
10+ 3987.27 грн
50+ 3062.35 грн
250+ 2992.77 грн
500+ 2965.35 грн
IXGA20N250HVLittelfuseHigh Voltage IGBT
товар відсутній
IXGA20N250HV-TRLIXYSIGBT Transistors DISC IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXGA20N250HV-TRLIXYSDescription: DISC IGBT NPT VERY HI VOLTAGE TO
товар відсутній
IXGA20N60BIXYSDescription: IGBT 600V 40A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGA20N60BIXYSIGBT Transistors 40 Amps 600V 2 Rds
товар відсутній
IXGA24N120C3IXYSDescription: IGBT 1200V 48A 250W TO263
товар відсутній
IXGA24N120C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
товар відсутній
IXGA24N120C3IXYSIGBT Modules 40khz PT IGBTs Power Device
товар відсутній
IXGA24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA24N120C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
кількість в упаковці: 1 шт
товар відсутній
IXGA24N60CIXYSDescription: IGBT 600V 48A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGA28N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
товар відсутній
IXGA30N120B3LittelfuseTrans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
300+451.82 грн
Мінімальне замовлення: 300
IXGA30N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
IXGA30N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
IXGA30N120B3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGA30N120B3 - IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (17-Jan-2023)
на замовлення 281 шт:
термін постачання 21-31 дні (днів)
2+600.02 грн
10+ 542.46 грн
50+ 495.94 грн
100+ 417.32 грн
250+ 377.11 грн
Мінімальне замовлення: 2
IXGA30N120B3IXYSIGBTs GenX3 1200V IGBT
на замовлення 2679 шт:
термін постачання 21-30 дні (днів)
1+852.8 грн
10+ 774.34 грн
50+ 567.21 грн
100+ 521.52 грн
250+ 516.6 грн
1000+ 496.92 грн
5000+ 474.43 грн
IXGA30N120B3IXYSDescription: IGBT 1200V 60A 300W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+782.35 грн
IXGA30N120B3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 60A 300W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA30N120B3-TRLIXYSIGBTs IXGA30N120B3 TRL
товар відсутній
IXGA30N120B3-TRLIXYSDescription: IXGA30N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGA30N120B3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA30N60C3IXYSDescription: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGA30N60C3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
IXGA30N60C3C1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
товар відсутній
IXGA30N60C3C1IXYSDescription: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGA30N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA30N60C3D4IXYSDescription: IGBT 600V 60A 220W TO263
товар відсутній
IXGA30N60C3D4LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXGA30N60C3D4IXYSIGBT Transistors 600V 30A
товар відсутній
IXGA36N60A3IXYSIGBT Transistors Disc IGBT PT-Low Frequency TO-263D2
товар відсутній
IXGA36N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товар відсутній
IXGA36N60A3-TRLLittelfuse Disc IGBT PT-Low Frequency TO-263D2
товар відсутній
IXGA42N30C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: SMD
Gate charge: 76nC
Turn-on time: 21ns
Turn-off time: 113ns
кількість в упаковці: 1 шт
товар відсутній
IXGA42N30C3IXYSDescription: IGBT 300V 223W TO263AA
товар відсутній
IXGA42N30C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: SMD
Gate charge: 76nC
Turn-on time: 21ns
Turn-off time: 113ns
товар відсутній
IXGA48N60A3IXYSDescription: IGBT 600V 120A 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
товар відсутній
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60A3IXYSIGBTs 48 Amps 600V
на замовлення 425 шт:
термін постачання 21-30 дні (днів)
1+388.68 грн
10+ 328.16 грн
50+ 264.27 грн
100+ 227.02 грн
500+ 191.18 грн
1000+ 164.47 грн
IXGA48N60A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
2+338.25 грн
3+ 282.61 грн
4+ 231.36 грн
11+ 218.91 грн
Мінімальне замовлення: 2
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
на замовлення 180 шт:
термін постачання 14-21 дні (днів)
1+405.9 грн
3+ 352.17 грн
4+ 277.63 грн
11+ 262.69 грн
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+196.41 грн
Мінімальне замовлення: 800
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK T/R
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+173.02 грн
Мінімальне замовлення: 800
IXGA48N60A3-TRLIXYSDescription: IXGA48N60A3 TRL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 3344 шт:
термін постачання 21-31 дні (днів)
1+333.77 грн
10+ 269.65 грн
100+ 218.16 грн
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+401.61 грн
Мінімальне замовлення: 800
IXGA48N60A3-TRLIXYSDescription: IXGA48N60A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+201.37 грн
1600+ 166.04 грн
2400+ 156.34 грн
Мінімальне замовлення: 800
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA48N60A3-TRLIXYSIGBTs IXGA48N60A3 TRL
на замовлення 498 шт:
термін постачання 21-30 дні (днів)
1+364.08 грн
10+ 301.49 грн
25+ 253.73 грн
100+ 211.56 грн
250+ 200.31 грн
500+ 177.82 грн
800+ 162.36 грн
IXGA48N60B3IXYSIGBT Transistors 48 Amps 600V
товар відсутній
IXGA48N60B3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60B3IXYSDescription: IGBT 600V 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGA48N60B3-TRLIXYSIGBTs IXGA48N60B3 TRL
товар відсутній
IXGA48N60B3-TRLIXYSDescription: IXGA48N60B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGA48N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60C3IXYSIGBT Transistors 48 Amps 600V
товар відсутній
IXGA48N60C3IXYSDescription: IGBT 600V 75A 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGA48N60C3-TRLIXYSIGBTs IXGA48N60C3 TRL
товар відсутній
IXGA48N60C3-TRLIXYSDescription: IXGA48N60C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGA4N100IXYSDescription: IGBT 1000V 8A 40W TO263AA
товар відсутній
IXGA4N100IXYSIGBTs 8 Amps 1000V 2.7 Rds
товар відсутній
IXGA50N60C4IXYSDescription: IGBT 600V 90A 300W TO263
товар відсутній
IXGA7N60BIXYSDescription: IGBT 600V 14A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
товар відсутній
IXGA7N60BIXYSIGBTs 14 Amps 600V 2.0 Rds
товар відсутній
IXGA7N60BD1IXYSDescription: IGBT 600V 14A 80W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 10ns/100ns
Switching Energy: 300µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
товар відсутній
IXGA7N60CIXYSIGBT Transistors 14 Amps 600V 2.7 Rds
товар відсутній
IXGA7N60CIXYSDescription: IGBT 600V 14A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/65ns
Switching Energy: 70µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
товар відсутній
IXGA7N60CD1IXYSDescription: IGBT 600V 14A 75W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 10ns/65ns
Switching Energy: 120µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 75 W
товар відсутній
IXGA7N60CD1IXYSIGBT Transistors 14 Amps 600V 2.7 Rds
товар відсутній
IXGA8N100IXYSIGBT Transistors 16 Amps 1000V 2.7 Rds
товар відсутній
IXGA8N100IXYSDescription: IGBT 1000V 16A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/600ns
Switching Energy: 2.3mJ (off)
Test Condition: 800V, 8A, 120Ohm, 15V
Gate Charge: 26.5 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 54 W
товар відсутній
IXGA90N33TCIXYSDescription: IGBT 330V 90A 200W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
Supplier Device Package: TO-263AA
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 200 W
товар відсутній
IXGB200N60B3IXYSIGBT Transistors GenX3 600V IGBT
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
IXGB200N60B3IXYSDescription: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
товар відсутній
IXGB200N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 1250mW 3-Pin(3+Tab) PLUS 264
товар відсутній
IXGB75N60BD1IXYSDescription: IGBT 600V 120A 360W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 62ns/220ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 75A, 5Ohm, 15V
Gate Charge: 248 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
товар відсутній
IXGC12N60CIXYSDescription: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
товар відсутній
IXGC12N60CD1IXYSDescription: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
товар відсутній
IXGC16N60B2IXYSDescription: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60B2D1IXYSDescription: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60C2IXYSDescription: IGBT 600V 20A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60C2IXYSIGBT Transistors 8 Amps 600V 3 V Rds
товар відсутній
IXGC16N60C2D1IXYSDescription: IGBT 600V 20A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60C2D1IXYSIGBT Transistors 8 Amps 600V 3 V Rds
товар відсутній
IXGE200N60BIXYSDescription: IGBT MOD 600V 160A ISOPLUS227
Packaging: Tube
Package / Case: ISOPLUS227™
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: ISOPLUS227™
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
IXGE200N60BIXYSIGBTs 175 Amps 600V 2.1 Rds
товар відсутній
IXGF20N250IXYSDescription: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
товар відсутній
IXGF20N250IXYSIGBT Transistors DiscIGBT NPT-Very Hi Voltage I4-PAK ISO+
товар відсутній
IXGF20N300IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 103A
Turn-on time: 524ns
Turn-off time: 355ns
Type of transistor: IGBT
Power dissipation: 100W
Features of semiconductor devices: high voltage
Gate charge: 31nC
Technology: NPT
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+2870 грн
IXGF20N300IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 103A
Turn-on time: 524ns
Turn-off time: 355ns
Type of transistor: IGBT
Power dissipation: 100W
Features of semiconductor devices: high voltage
Gate charge: 31nC
Technology: NPT
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)
1+3444 грн
IXGF20N300LittelfuseTrans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF20N300LittelfuseTrans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF20N300IXYSDescription: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
1+3632.72 грн
25+ 2931.38 грн
100+ 2735.96 грн
IXGF20N300IXYSIGBTs ISOPLUS 3KV 22A IGBT
товар відсутній
IXGF25N250IXYSDescription: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товар відсутній
IXGF25N250IXYSIGBT Transistors IGBT NPT-VERY HIVOLT
товар відсутній
IXGF25N250
Код товару: 149950		Транзистори > IGBT
товар відсутній
IXGF25N250LittelfuseTrans IGBT Chip N-CH 2500V 30A 114000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF25N300IXYSDescription: IGBT 3000V 27A 114W I4-PAK
товар відсутній
IXGF25N300IXYSIGBT Transistors
товар відсутній
IXGF25N300LittelfuseTrans IGBT Chip N-CH 3000V 27A 114000mW 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF30N400
Код товару: 167341		Транзистори > IGBT
товар відсутній
IXGF30N400IXYSDescription: IGBT 4000V 30A 160W I4-PAK
товар відсутній
IXGF30N400IXYSIGBT Transistors IGBT NPT-HI VOLTAGE
товар відсутній
IXGF30N400LittelfuseTrans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF30N400LittelfuseTrans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF32N170IXYSDescription: IGBT 1700V 44A 200W I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 10.6mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 200 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1744.89 грн
25+ 1392.54 грн
100+ 1305.53 грн
IXGF32N170IXYSIGBT Transistors 26 Amps 1700V 3.5 V Rds
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
1+1895.02 грн
10+ 1659.41 грн
50+ 1406.42 грн
100+ 1261.63 грн
500+ 1083.1 грн
IXGF32N170LittelfuseTrans IGBT Chip 1700V 44A 200000mW 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF32N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGF32N170 - IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.5
DC-Kollektorstrom: 44
Anzahl der Pins: 3
Bauform - Transistor: ISOPLUS i4-PAC
Kollektor-Emitter-Spannung V(br)ceo: 1.7
Verlustleistung Pd: 200
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGF32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
IXGF32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGF36N300IXYSDescription: IGBT 3000V 36A 160W I4-PAK
товар відсутній
IXGF36N300IXYSIGBT Transistors
товар відсутній
IXGF36N300LittelfuseTrans IGBT Chip N-CH 3000V 36A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGH100N30C3IXYSDescription: IGBT 300V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/105ns
Switching Energy: 230µJ (on), 520µJ (off)
Test Condition: 200V, 50A, 2Ohm, 15V
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 460 W
товар відсутній
IXGH100N30C3IXYSIGBT Transistors 100 Amps 300V
товар відсутній
IXGH10N100IXYSDescription: IGBT 1000V 20A 100W TO247AD
товар відсутній
IXGH10N100IXYSIGBT Transistors 1000V 20A
товар відсутній
IXGH10N100AIXYSDescription: IGBT 1000V 20A 100W TO247AD
товар відсутній
IXGH10N100AIXYSIGBT Transistors 10 Amps 1000V 4 Rds
товар відсутній
IXGH10N100AU1IXYSDescription: IGBT 1000V 20A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/550ns
Switching Energy: 2mJ (off)
Test Condition: 800V, 10A, 150Ohm, 15V
Gate Charge: 52 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGH10N100U1IXYSDescription: IGBT 1000V 20A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/550ns
Switching Energy: 2mJ (off)
Test Condition: 800V, 10A, 150Ohm, 15V
Gate Charge: 52 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGH10N170IXYSIGBTs 20 Amps 1700 V 4 V Rds
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
1+828.2 грн
10+ 719.37 грн
30+ 536.28 грн
60+ 522.22 грн
IXGH10N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 10A
Power dissipation: 110W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 630ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH10N170IXYSDescription: IGBT 1700V 20A 110W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 110 W
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
1+759.54 грн
30+ 592.23 грн
IXGH10N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 10A
Power dissipation: 110W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 630ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH10N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)
1+640.55 грн
3+ 490.85 грн
6+ 446.31 грн
30+ 441.04 грн
IXGH10N170ALittelfuseTrans IGBT Chip N-CH 1700V 10A 110W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH10N170ALittelfuseTrans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH10N170AIXYSIGBTs 20 Amps 1700 V 7 V Rds
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+583.84 грн
10+ 574.69 грн
30+ 399.22 грн
120+ 350.02 грн
510+ 308.55 грн
1020+ 283.25 грн
IXGH10N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+533.79 грн
3+ 393.89 грн
6+ 371.93 грн
30+ 367.54 грн
IXGH10N170AIXYSDescription: IGBT NPT 1700V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
30+418.67 грн
90+ 360.7 грн
300+ 339.49 грн
Мінімальне замовлення: 30
IXGH10N300Ixys CorporationTrans IGBT Chip N-CH 3000V 18A 100W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH10N300IXYSDescription: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGH120N30B3IXYSDescription: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
товар відсутній
IXGH120N30B3IXYSIGBTs 120 Amps 300V
товар відсутній
IXGH120N30B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
товар відсутній
IXGH120N30B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
кількість в упаковці: 1 шт
товар відсутній
IXGH120N30C3IXYSIGBTs 120 Amps 300V
товар відсутній
IXGH120N30C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
товар відсутній
IXGH120N30C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
кількість в упаковці: 1 шт
товар відсутній
IXGH120N30C3IXYSDescription: IGBT 300V 75A 540W TO247
товар відсутній
IXGH12N100IXYSDescription: IGBT 1000V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N100IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGH12N120A2D1IXYSDescription: IGBT 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH12N120A2D1IXYSMOSFET 24 Amps 1200V 2.7 Rds
товар відсутній
IXGH12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
IXGH12N120A3IXYSDescription: IGBT 1200V 22A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
300+252.88 грн
Мінімальне замовлення: 300
IXGH12N120A3IXYSIGBTs GenX3 1200V IGBTs
товар відсутній
IXGH12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGH12N60BIXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N60BD1IXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N60CIXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N60CD1IXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N90CIXYSIGBTs 24 Amps 900V 3 Rds
товар відсутній
IXGH12N90CIXYSDescription: IGBT 900V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/135ns
Switching Energy: 320µJ (off)
Test Condition: 720V, 12A, 22Ohm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH15N120BIXYSDescription: IGBT 1200V 30A 180W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
товар відсутній
IXGH15N120BIXYSIGBTs 30 Amps 1200V 3.2 Rds
товар відсутній
IXGH15N120B2D1IXYSIGBT Transistors 30 Amps 1200V 2.7 V Rds
товар відсутній
IXGH15N120B2D1IXYSDescription: IGBT 1200V 30A 192W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 165 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/165ns
Switching Energy: 1.4mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 192 W
товар відсутній
IXGH15N120BD1IXYSIGBTs 30 Amps 1200V 3.2 Rds
товар відсутній
IXGH15N120BD1IXYSDescription: IGBT 1200V 30A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGH15N120CIXYSDescription: IGBT 1200V 30A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGH15N120CD1IXYSMODULE
на замовлення 150 шт:
термін постачання 14-28 дні (днів)
IXGH15N120CD1IXYSDescription: IGBT 1200V 30A 150W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGH15N120CD1IXYSIGBTs 30 Amps 1200V 3.8 Rds
товар відсутній
IXGH16N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH16N170 - IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 190W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 32A
SVHC: Lead (17-Jan-2023)
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
1+831.04 грн
5+ 747.46 грн
10+ 663.1 грн
50+ 583.52 грн
100+ 508.9 грн
250+ 498.76 грн
IXGH16N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH16N170IXYSDescription: IGBT NPT 1700V 32A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/400ns
Switching Energy: 9.3mJ (off)
Test Condition: 1360V, 16A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
на замовлення 2849 шт:
термін постачання 21-31 дні (днів)
1+802.12 грн
30+ 616.71 грн
120+ 551.78 грн
510+ 456.9 грн
1020+ 411.21 грн
IXGH16N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
товар відсутній
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170IXYSIGBTs 32 Amps 1700 V 3.5 V Rds
на замовлення 996 шт:
термін постачання 21-30 дні (днів)
1+874.94 грн
10+ 793.74 грн
30+ 619.92 грн
120+ 570.02 грн
270+ 535.58 грн
510+ 473.73 грн
1020+ 451.94 грн
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170
Код товару: 119539		IXYSТранзистори > IGBT
Корпус: TO-247
Vces: 1700 V
Vce: 3,5 V
Ic 25: 32 A
Ic 100: 16 A
у наявності 9 шт:
4 шт - склад
4 шт - РАДІОМАГ-Київ
1 шт - РАДІОМАГ-Одеса
1+303 грн
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190W 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+556.91 грн
Мінімальне замовлення: 30
IXGH16N170AIXYSIGBTs 32 Amps 1700 V 5 V Rds
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
1+810.98 грн
10+ 725.84 грн
30+ 562.99 грн
60+ 562.29 грн
120+ 529.25 грн
510+ 480.05 грн
1020+ 454.75 грн
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190W 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+1144.41 грн
Мінімальне замовлення: 30
IXGH16N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH16N170AIXYSDescription: IGBT 1700V 16A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
1+743.58 грн
30+ 579.76 грн
120+ 545.67 грн
IXGH16N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170AH1IXYSDescription: IGBT 1700V 16A 190W TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
товар відсутній
IXGH16N170AH1IXYSIGBT Transistors 11 Amps 1700V 5 Rds
товар відсутній
IXGH16N170AH1LittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH16N60B2IXYSIGBTs 600V 16A
товар відсутній
IXGH16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGH16N60B2D1IXYSIGBT Transistors 16 Amps 600V 2.3 V Rds
товар відсутній
IXGH16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3 V Rds
товар відсутній
IXGH16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGH17N100IXYSIGBT Transistors 17 Amps 1000V 4 Rds
товар відсутній
IXGH17N100IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100LittelfuseTrans IGBT Chip N-CH 1000V 34A 150000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH17N100Aixys07+
на замовлення 150 шт:
термін постачання 14-28 дні (днів)
IXGH17N100AIXYSIGBT Transistors 17 Amps 1000V
товар відсутній
IXGH17N100AIXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100AU1IXYSIGBT Transistors 17 Amps 1000V
товар відсутній
IXGH17N100AU1IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100U1IXYSIGBT Transistors 17 Amps 1000V
товар відсутній
IXGH17N100U1IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH1961LittelfuseIXGH1961^IXYS
товар відсутній
IXGH20N100IXYSDescription: IGBT 1000V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N120IXYSDescription: IGBT 1200V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N120IXYSIGBTs 40 Amps 1200V 3 V Rds
товар відсутній
IXGH20N120A3IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
на замовлення 229 шт:
термін постачання 21-30 дні (днів)
1+601.88 грн
10+ 509.22 грн
30+ 401.33 грн
120+ 368.3 грн
270+ 356.35 грн
IXGH20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
1+530.63 грн
3+ 321.41 грн
8+ 303.84 грн
IXGH20N120A3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH20N120A3 - IGBT, 40A, 2.5V, 180W, 1.2kV, TO-247AD, 3 Pins
Kollektor-Emitter-Spannung, max.: 1.2
Verlustleistung: 180
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 40
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Sättigungsspannung: 2.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGH20N120A3IXYSDescription: IGBT 1200V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
300+291.2 грн
Мінімальне замовлення: 300
IXGH20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 161 шт:
термін постачання 14-21 дні (днів)
1+636.76 грн
3+ 400.53 грн
8+ 364.61 грн
300+ 356.7 грн
1020+ 350.55 грн
IXGH20N120BIXYSDescription: IGBT 1200V 40A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
товар відсутній
IXGH20N120BD1IXYSIGBT Transistors 20 Amps 1200V 3.40 Rds
товар відсутній
IXGH20N120BD1IXYSDescription: IGBT 1200V 40A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Gate Charge: 72 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
товар відсутній
IXGH20N120IHIXYSMOSFETs 20 Amps 1200V
товар відсутній
IXGH20N120IHIXYSDescription: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH20N140C3H1IXYSDescription: IGBT 1400V 42A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/110ns
Switching Energy: 1.35mJ (on), 440µJ (off)
Test Condition: 700V, 20A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 250 W
товар відсутній
IXGH20N140C3H1IXYSIGBT Transistors GenX3 1400V IGBTs w/ Diode
товар відсутній
IXGH20N160IXYSIGBTs 600V 40A
товар відсутній
IXGH20N160IXYSDescription: IGBT 600V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXGH20N60IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60AIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60AU1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
товар відсутній
IXGH20N60BIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60BD1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60BU1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
товар відсутній
IXGH22N140IHIXYSMOSFETs 22 Amps 1400V
товар відсутній
IXGH22N140IHIXYSDescription: IGBT 1400V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1400 V
товар відсутній
IXGH240N30PBIXYSDescription: IGBT 300V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGH240N30PBIXYSIGBTs 240 Amps 300V
товар відсутній
IXGH24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
IXGH24N120C3IXYSDescription: IGBT PT 1200V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
1+772.47 грн
10+ 514.33 грн
100+ 384.64 грн
IXGH24N120C3IXYSIGBTs 48 Amps 1200V
на замовлення 613 шт:
термін постачання 21-30 дні (днів)
1+760.96 грн
10+ 642.59 грн
30+ 507.46 грн
120+ 465.99 грн
270+ 438.58 грн
510+ 411.17 грн
1020+ 376.73 грн
IXGH24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGH24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH24N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
IXGH24N120C3H1IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGH24N120C3H1IXYSIGBTs High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGH24N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGH24N120IHIXYSDescription: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH24N120IHIXYSIGBTs 24 Amps 1200V
товар відсутній
IXGH24N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH24N170 - IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 50A
SVHC: Lead (17-Jan-2023)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+1243.4 грн
5+ 1125.13 грн
10+ 1006.87 грн
50+ 917.38 грн
100+ 829.91 грн
IXGH24N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1079.4 грн
3+ 948.12 грн
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
1+1295.28 грн
3+ 1181.51 грн
30+ 1118.42 грн
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170IXYSDescription: IGBT 1700V 50A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 42ns/200ns
Switching Energy: 8mJ (off)
Test Condition: 1360V, 50A, 5Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+1176.95 грн
IXGH24N170IXYSIGBTs 50 Amps 1700V 3.3 V Rds
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1283.3 грн
10+ 1114.63 грн
30+ 917.23 грн
60+ 889.82 грн
120+ 837.1 грн
270+ 820.94 грн
510+ 761.19 грн
IXGH24N170ALittelfuseTrans IGBT Chip N-CH 1700V 25A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH24N170ALittelfuseTrans IGBT Chip N-CH 1700V 25A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170AIXYSDescription: IGBT 1700V 24A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
товар відсутній
IXGH24N170AIXYSIGBTs 24 Amps 1200 V 5 V Rds
товар відсутній
IXGH24N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH24N170AH1IXYSDescription: IGBT 1700V 24A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
товар відсутній
IXGH24N170AH1IXYSIGBT Transistors High Voltage IGBT w/ Diode
товар відсутній
IXGH24N60AIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
товар відсутній
IXGH24N60AIXYSMODULE
на замовлення 92 шт:
термін постачання 14-28 дні (днів)
IXGH24N60AU1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 1.5mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60BIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60BU1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60CIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60C4IXYSDescription: IGBT 600V 56A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
товар відсутній
IXGH24N60C4D1IXYSDescription: IGBT 600V 56A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
товар відсутній
IXGH24N60CD1
Код товару: 36487		Транзистори > IGBT
товар відсутній
IXGH24N60CD1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH25N100IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100IXYSIGBTs 1000V 50A
товар відсутній
IXGH25N100AIXYSIGBT Transistors HIGH SPEED IGBT 1000V 50A
товар відсутній
IXGH25N100AIXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100AU1IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100AU1IXYSIGBTs 1000V 50A
товар відсутній
IXGH25N100U1IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100U1IXYSIGBTs 1000V 50A
товар відсутній
IXGH25N120IXYSIGBTs 50 Amps 1200V 3 Rds
товар відсутній
IXGH25N120IXYSDescription: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120AIXYSDescription: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120AIXYSIGBTs 25 Amps 1200V
товар відсутній
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300W 3-Pin(3+Tab) TO-247
на замовлення 3414 шт:
термін постачання 21-31 дні (днів)
12+1064.21 грн
13+ 970.83 грн
25+ 843.38 грн
50+ 766.14 грн
100+ 624.87 грн
1000+ 585.69 грн
Мінімальне замовлення: 12
IXGH25N160IXYSIGBTs 75 Amps 1600V 2.5 Rds
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
1+1050.42 грн
10+ 943.27 грн
30+ 775.25 грн
60+ 748.54 грн
120+ 697.23 грн
270+ 629.06 грн
510+ 603.75 грн
IXGH25N160IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH25N160IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300W 3-Pin(3+Tab) TO-247
на замовлення 3414 шт:
термін постачання 21-31 дні (днів)
1+988.19 грн
10+ 901.48 грн
25+ 783.14 грн
50+ 711.42 грн
100+ 580.24 грн
1000+ 543.85 грн
IXGH25N160LITTELFUSEDescription: LITTELFUSE - IXGH25N160 - TRANSISTOR, IGBT, 1.6KV, 75A, TO-247
Kollektor-Emitter-Spannung, max.: 1.6
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 75
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: To Be Advised
товар відсутній
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH25N160IXYSDescription: IGBT NPT 1600V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH25N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH25N250LittelfuseTrans IGBT Chip N-CH 2500V 60A 250000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH25N250IXYSDescription: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH25N250LittelfuseTrans IGBT Chip N-CH 2500V 60A 250W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH25N250IXYSIGBTs TO247 2500V 60A IGBT
товар відсутній
IXGH25N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH26N50TO-220
на замовлення 89 шт:
термін постачання 14-28 дні (днів)
IXGH28N120BIxysTrans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BIXYSIGBT Transistors 28 Amps 1200V 3.50 Rds
товар відсутній
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
38+195.95 грн
Мінімальне замовлення: 38
IXGH28N120BD1IXYSIGBTs 28 Amps 1200V 3.50 Rds
товар відсутній
IXGH28N120BD1IXYSDescription: IGBT 1200V 50A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 2.2mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH28N120BD1LittelfuseTrans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N140B3H1IXYSIGBT Transistors Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGH28N140B3H1IXYSDescription: IGBT 1400V 60A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGH28N60A3IXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
товар відсутній
IXGH28N60A3IXYSDescription: IGBT
товар відсутній
IXGH28N60BIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/175ns
Switching Energy: 2mJ (off)
Test Condition: 480V, 28A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH28N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXGH28N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 66A 190000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH28N60B3D1IXYSDescription: IGBT 600V 66A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 340µJ (on), 650µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
1+355.82 грн
30+ 273.63 грн
IXGH28N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
товар відсутній
IXGH28N60B3D1IXYSIGBTs 28 Amps 600V
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
1+387.86 грн
30+ 351.6 грн
IXGH28N60BD1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/175ns
Switching Energy: 2mJ (off)
Test Condition: 480V, 28A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH28N90BIXYSIGBT Transistors 51 Amps 900V 2.5 Rds
товар відсутній
IXGH28N90BIXYSDescription: IGBT 900V 51A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 1.2mJ (off)
Test Condition: 720V, 28A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH2N250IXYSIGBTs TO247 2500V 2A IGBT
на замовлення 636 шт:
термін постачання 21-30 дні (днів)
1+1243.94 грн
10+ 1079.87 грн
30+ 863.81 грн
60+ 863.11 грн
120+ 811.8 грн
510+ 749.25 грн
IXGH2N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
на замовлення 287 шт:
термін постачання 21-30 дні (днів)
1+1063.63 грн
2+ 783.39 грн
3+ 740.2 грн
30+ 730.68 грн
IXGH2N250IXYSDescription: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
1+1141.21 грн
30+ 889.43 грн
120+ 837.1 грн
IXGH2N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 287 шт:
термін постачання 14-21 дні (днів)
1+1276.36 грн
2+ 976.23 грн
3+ 888.24 грн
30+ 876.81 грн
IXGH2N250LittelfuseTrans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH2N250LittelfuseTrans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N120B3LittelfuseTrans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N120B3IXYSIGBTs IGBT PT-MID FREQUNCY
товар відсутній
IXGH30N120B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120B3D1IXYSIGBTs 60 Amps 1200V
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
1+724.88 грн
30+ 632.89 грн
IXGH30N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120B3D1IXYSDescription: IGBT 1200V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
1+665.26 грн
30+ 537.12 грн
IXGH30N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120B3D1 Транзистор IGBT 1200V 300W TO247AD
Код товару: 162398		Транзистори > IGBT
товар відсутній
IXGH30N120BD1IXYSDescription: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH30N120BD1IXYSMOSFET 50 Amps 1200V 3.5 V Rds
товар відсутній
IXGH30N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
товар відсутній
IXGH30N120C3H1IXYSIGBTs High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGH30N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120C3H1IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
товар відсутній
IXGH30N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
кількість в упаковці: 1 шт
товар відсутній
IXGH30N120IHIXYSDescription: IGBT 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH30N60AIXYSDescription: IGBT 600V 50A 200W TO247AD
товар відсутній
IXGH30N60BIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH30N60B2IXYSDescription: IGBT 600V 70A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/110ns
Switching Energy: 320µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH30N60B2IXYSIGBT Transistors 30 Amps 600V 1.8 V Rds
товар відсутній
IXGH30N60B2D1
Код товару: 30215		Транзистори > IGBT
товар відсутній
IXGH30N60B2D1IXYSDescription: IGBT 600V 70A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/110ns
Switching Energy: 320µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH30N60B4IXYSDescription: IGBT 600V 66A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 440µJ (on), 700µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 190 W
товар відсутній
IXGH30N60BD1IXYSDescription: IGBT 600V 60A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH30N60BU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH30N60BU1IXYSIGBT Transistors 60 Amps 600V 1.8 Rds
товар відсутній
IXGH30N60C2IXYSDescription: IGBT 600V 70A 190W TO247
товар відсутній
IXGH30N60C2D1IXYSDescription: IGBT 600V 70A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/70ns
Switching Energy: 190µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH30N60C2D4IXYSDescription: IGBT 600V 60A TO247AD
товар відсутній
IXGH30N60C3LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3IXYSIGBT Modules 30 Amps 600V
товар відсутній
IXGH30N60C3IXYS/LittelfuseТранзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
на замовлення 27 шт:
термін постачання 3-4 дні (днів)
6+113.05 грн
10+ 105.52 грн
100+ 97.98 грн
Мінімальне замовлення: 6
IXGH30N60C3IXYSDescription: IGBT 600V 60A 220W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3C1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH30N60C3C1 - IGBT, Einzeltransistor, Siliziumkarbid, 60A, 3V, 220W, 600V, TO-247, 3 Pins
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 220
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 3
Kollektorstrom: 60
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGH30N60C3C1IXYSDescription: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
IXGH30N60C3D1
Код товару: 164623		Транзистори > IGBT
товар відсутній
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3D1IXYSIGBTs High Frequency Range 40khz C-IGBT w/Diod
на замовлення 410 шт:
термін постачання 21-30 дні (днів)
1+469.04 грн
10+ 428.39 грн
30+ 324.72 грн
120+ 312.77 грн
510+ 276.22 грн
1020+ 250.22 грн
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
3+210.06 грн
Мінімальне замовлення: 3
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
20+611.11 грн
25+ 584.86 грн
50+ 562.58 грн
100+ 524.08 грн
250+ 470.54 грн
Мінімальне замовлення: 20
IXGH30N60C3D1LITTELFUSEDescription: LITTELFUSE - IXGH30N60C3D1 - IGBT, 60 A, 2.6 V, 220 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.6V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 220W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: Boric acid (14-Jun-2023)
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
2+485.69 грн
5+ 436.81 грн
10+ 387.92 грн
50+ 341.18 грн
100+ 297.36 грн
Мінімальне замовлення: 2
IXGH30N60C3D1IXYSDescription: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
1+468.35 грн
30+ 360.53 грн
120+ 322.59 грн
510+ 267.12 грн
1020+ 240.41 грн
2010+ 225.27 грн
IXGH31N60IXYSIGBT Transistors 60 Amps 600V 1.7 Rds
товар відсутній
IXGH31N60IXYSDescription: IGBT 600V 60A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/400ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH31N60D1IXYSDescription: IGBT 600V 60A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/400ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH31N60D1IXYSIGBT Transistors 60 Amps 600V 1.7 Rds
товар відсутній
IXGH31N60U1IXYSIGBT Transistors
товар відсутній
IXGH32N100A3IXYSDescription: IGBT 1000V 75A 300W TO247AD
товар відсутній
IXGH32N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
кількість в упаковці: 1 шт
товар відсутній
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+808.9 грн
Мінімальне замовлення: 30
IXGH32N120A3IXYSDescription: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
1+818.85 грн
30+ 629.45 грн
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
2+503.83 грн
10+ 475.85 грн
25+ 455.23 грн
50+ 434.58 грн
100+ 362.11 грн
Мінімальне замовлення: 2
IXGH32N120A3LITTELFUSEDescription: LITTELFUSE - IXGH32N120A3 - IGBT, 75 A, 2.35 V, 300 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.35V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: Boric acid (14-Jun-2023)
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
1+865.73 грн
5+ 778.21 грн
10+ 690.69 грн
50+ 607.68 грн
100+ 529.17 грн
250+ 518.36 грн
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+497.39 грн
Мінімальне замовлення: 30
IXGH32N120A3IXYSIGBTs 32 Amps 1200V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+892.16 грн
10+ 754.13 грн
30+ 593.91 грн
120+ 546.12 грн
270+ 513.79 грн
510+ 481.46 грн
1020+ 465.99 грн
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300000mW 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
IXGH32N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
товар відсутній
IXGH32N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH32N170 - IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 2.5
MSL: MSL 1 - unbegrenzt
Verlustleistung: 350
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 75
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGH32N170LittelfuseTrans IGBT Chip N-CH 1700V 75A 350W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170IXYSIGBTs 72 Amps 1700 V 3.3 V Rds
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
1+1541.6 грн
IXGH32N170LittelfuseTrans IGBT Chip N-CH 1700V 75A 350000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1293.08 грн
2+ 1135.55 грн
IXGH32N170
Код товару: 140302		Різні комплектуючі > Різні комплектуючі 3
товар відсутній
IXGH32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
1+1551.69 грн
2+ 1415.07 грн
IXGH32N170IXYSDescription: IGBT 1700V 75A 350W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
товар відсутній
IXGH32N170ALittelfuseTrans IGBT Chip N-CH 1700V 32A 350000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH32N170A
Код товару: 129525		Транзистори > IGBT
Корпус: TO-247
Vces: 1700 V
Vce: 5 V
Ic 25: 32 A
Ic 100: 21 A
td(on)/td(off) 100-150 град: 46/260
товар відсутній
IXGH32N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH32N170AIXYSDescription: IGBT 1700V 32A 350W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
товар відсутній
IXGH32N170ALittelfuseTrans IGBT Chip N-CH 1700V 32A 350W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170AIXYSIGBTs VRY HI VOLT NPT IGBT 1700V, 72A
на замовлення 300 шт:
термін постачання 266-275 дні (днів)
1+1615.4 грн
10+ 1591.51 грн
IXGH32N60AIXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGH32N60AU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/120ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60AU1IXYSIGBT Transistors 32 Amps 600V
товар відсутній
IXGH32N60BIXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGH32N60BIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 800µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60BD1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60BU1IXYSIGBT Transistors 60 Amps 600V 2.3 Rds
товар відсутній
IXGH32N60BU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60CIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60CIXYSIGBT Transistors 60 Amps 600V 2.5 Rds
товар відсутній
IXGH32N60CD1IXYSMODULE
на замовлення 59 шт:
термін постачання 14-28 дні (днів)
IXGH32N60CD1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60CD1IXYSIGBT Transistors 60 Amps 600V 2.5 Rds
товар відсутній
IXGH32N60CD1 (IGBT-транзистор)
Код товару: 49455		Різні комплектуючі > Різні комплектуючі 2
товар відсутній
IXGH32N90B2IXYSDescription: IGBT 900V 64A 300W TO247
товар відсутній
IXGH32N90B2IXYSIGBTs 32 Amps 900V 2.7 Rds
товар відсутній
IXGH32N90B2D1IXYSDescription: IGBT 900V 64A 300W TO247
товар відсутній
IXGH32N90B2D1IXYSIGBT Transistors 32 Amps 900V 2.7 Rds
товар відсутній
IXGH34N60B2IXYSDescription: IGBT 600V 70A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 13ns/150ns
Switching Energy: 640µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH35N120BIXYSIGBT Transistors 70 Amps 1200V 3.3 Rds
товар відсутній
IXGH35N120BIXYSDescription: IGBT 1200V 70A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
IXGH35N120CIXYSDescription: IGBT 1200V 70A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
IXGH35N120CIXYSMODULE
на замовлення 86 шт:
термін постачання 14-28 дні (днів)
IXGH35N120C транзистор IGBT
Код товару: 109599		Транзистори > IGBT
товар відсутній
IXGH36N60A3IXYSDescription: IGBT 600V 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товар відсутній
IXGH36N60A3IXYSIGBT Transistors GenX3 600V IGBTs
товар відсутній
IXGH36N60A3D4IXYSDescription: IGBT 600V 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 3 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товар відсутній
IXGH36N60A3D4IXYSIGBT Transistors 36 Amps 600V 2 Rds
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
IXGH36N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 14-21 дні (днів)
1+391.71 грн
4+ 312.03 грн
10+ 283.78 грн
120+ 275.87 грн
IXGH36N60B3LittelfuseTrans IGBT Chip N-CH 600V 92A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH36N60B3LittelfuseTrans IGBT Chip N-CH 600V 92A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH36N60B3LITTELFUSEDescription: LITTELFUSE - IXGH36N60B3 - TRANSISTOR, IGBT, 600V, 92A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 250
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 92
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.5
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
товар відсутній
IXGH36N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
2+326.42 грн
4+ 250.39 грн
10+ 236.48 грн
120+ 229.89 грн
Мінімальне замовлення: 2
IXGH36N60B3IXYSDescription: IGBT PT 600V 92A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
на замовлення 271 шт:
термін постачання 21-31 дні (днів)
1+347.46 грн
30+ 265.35 грн
120+ 227.45 грн
IXGH36N60B3IXYSIGBTs GenX3 600V IGBTs
на замовлення 346 шт:
термін постачання 21-30 дні (днів)
1+377.2 грн
10+ 340.29 грн
30+ 256.54 грн
120+ 220.7 грн
510+ 196.1 грн
1020+ 160.95 грн
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250W 3-Pin(3+Tab) TO-247
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+2347.55 грн
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH36N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+3160.15 грн
IXGH36N60B3C1IXYSDescription: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH36N60B3C1IXYSIGBT Transistors 75Amps 600V
товар відсутній
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250W 3-Pin(3+Tab) TO-247
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
5+2528.13 грн
Мінімальне замовлення: 5
IXGH36N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+3792.18 грн
IXGH36N60B3D1IXYSDescription: IGBT 600V 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH36N60B3D1IXYSIGBT Transistors 36 Amps 600V
товар відсутній
IXGH36N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 36A 250000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH36N60B3D4IXYSDescription: IGBT 600V 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH36N60B3D4IXYSIGBT Transistors 200 Amps 600V
товар відсутній
IXGH38N60IXYSDescription: IGBT 600V 76A 200W TO247AD
товар відсутній
IXGH38N60U1IXYSDescription: IGBT 600V 76A 200W TO247AD
товар відсутній
IXGH39N60BIXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/250ns
Switching Energy: 4mJ (off)
Test Condition: 480V, 39A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
товар відсутній
IXGH39N60BD1IXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/250ns
Switching Energy: 4mJ (off)
Test Condition: 480V, 39A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
товар відсутній
IXGH39N60BD1
Код товару: 25259		Транзистори > IGBT
товар відсутній
IXGH39N60BD1
на замовлення 20 шт:
термін постачання 14-28 дні (днів)
IXGH40N120A2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120A2IXYSIGBTs SGL IGBT 1200V, 80A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+1391.54 грн
10+ 1208.39 грн
30+ 952.37 грн
60+ 927.77 грн
IXGH40N120A2LittelfuseTrans IGBT Chip N-CH 1200V 75A 360000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH40N120A2IXYSDescription: IGBT 1200V 75A 360W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/420ns
Switching Energy: 15mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 360 W
товар відсутній
IXGH40N120A2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
товар відсутній
IXGH40N120B2D1LittelfuseTrans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH40N120B2D1IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/290ns
Switching Energy: 4.5mJ (on), 3mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
300+725.39 грн
Мінімальне замовлення: 300
IXGH40N120B2D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH40N120B2D1 - IGBT, 75 A, 2.9 V, 380 W, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 2.9
MSL: MSL 1 - unbegrenzt
Verlustleistung: 380
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 75
SVHC: No SVHC (07-Jul-2017)
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+928.02 грн
5+ 909.1 грн
10+ 890.96 грн
50+ 809.75 грн
100+ 731.92 грн
IXGH40N120B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
товар відсутній
IXGH40N120B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120B2D1IXYSIGBTs IGBT, Diode 1200V, 75A
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
1+1342.34 грн
10+ 1165.55 грн
30+ 958.7 грн
60+ 903.17 грн
120+ 877.87 грн
510+ 794.23 грн
IXGH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
товар відсутній
IXGH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 380W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH40N120C3IXYSIGBTs 75Amps 1200V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1107.82 грн
10+ 961.86 грн
30+ 814.61 грн
60+ 768.22 грн
120+ 723.24 грн
270+ 700.75 грн
2520+ 688.8 грн
IXGH40N120C3IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
товар відсутній
IXGH40N120C3D1IXYSIGBTs 75Amps 1200V
на замовлення 433 шт:
термін постачання 21-30 дні (днів)
1+952.84 грн
30+ 830.11 грн
IXGH40N120C3D1IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+873.59 грн
30+ 705.59 грн
IXGH40N120C3D1
Код товару: 182236		Різні комплектуючі > Різні комплектуючі 1
товар відсутній
IXGH40N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
товар відсутній
IXGH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH40N120C3D1 - IGBT, 75 A, 4.4 V, 380 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 4.4V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 380W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: No SVHC (12-Jan-2017)
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
1+891.75 грн
5+ 880.71 грн
10+ 870.46 грн
50+ 798.04 грн
100+ 727.86 грн
250+ 718.4 грн
IXGH40N30BD1IXYSMODULE
на замовлення 44 шт:
термін постачання 14-28 дні (днів)
IXGH40N60IXYSIGBT Transistors G-series
товар відсутній
IXGH40N60IXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60AIXYSIGBT Transistors G-series
товар відсутній
IXGH40N60AIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60A3D1IXYSDescription: IGBT 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXGH40N60A3D1Littelfuse- TO-247
товар відсутній
IXGH40N60A3D1IXYSMOSFET 40 Amps 600V 1.25 Rds
товар відсутній
IXGH40N60BIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 2.7mJ (off)
Test Condition: 480V, 40A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60B2IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/130ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 30A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60B2D1
Код товару: 67024		Транзистори > IGBT
товар відсутній
IXGH40N60B2D1IXYSIGBT Transistors 40 Amps 600V 1.7 V Rds
товар відсутній
IXGH40N60B2D1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/130ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 30A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60CIXYSIGBT Transistors 75 Amps 600V 2.5 Rds
товар відсутній
IXGH40N60CIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 850µJ (off)
Test Condition: 480V, 40A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60C2
на замовлення 17 шт:
термін постачання 14-28 дні (днів)
IXGH40N60C2IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60C2IXYSIGBTs 40 Amps 600V 2.7 V Rds
товар відсутній
IXGH40N60C2
Код товару: 30177		Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 75 A
Ic 100: 40 A
товар відсутній
IXGH40N60C2D1IXYSIGBT Transistors 75 Amps 600V 2.7 V Rds
товар відсутній
IXGH40N60C2D1IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH41N60IXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 41A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/600ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 41A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
товар відсутній
IXGH42N30C3IXYSIGBT Transistors 42 Amps 300V
товар відсутній
IXGH42N30C3IXYSDescription: IGBT 300V 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/113ns
Switching Energy: 120µJ (on), 150µJ (off)
Test Condition: 200V, 21A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 223 W
товар відсутній
IXGH45N120IXYSDescription: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXGH48N60A3IXYSDescription: IGBT 600V 120A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 2189 шт:
термін постачання 21-31 дні (днів)
1+340.62 грн
30+ 262.06 грн
120+ 242.82 грн
IXGH48N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
IXGH48N60A3IXYSIGBTs 75 Amps 600V 1.05 V Rds
на замовлення 516 шт:
термін постачання 21-30 дні (днів)
1+371.46 грн
30+ 293.41 грн
120+ 245.3 грн
IXGH48N60A3
Код товару: 133424		Транзистори > IGBT
товар відсутній
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 120A 300W 3-Pin(3+Tab) TO-247
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
32+382.51 грн
Мінімальне замовлення: 32
IXGH48N60A3LITTELFUSEDescription: LITTELFUSE - IXGH48N60A3 - TRANSISTOR, IGBT, 600V, 120A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 120
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.18
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
товар відсутній
IXGH48N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 120A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3D1IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
товар відсутній
IXGH48N60A3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60A3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3D1IXYSDescription: IGBT 600V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
1+539.05 грн
30+ 414.39 грн
120+ 370.77 грн
IXGH48N60A3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
IXGH48N60B3IXYSDescription: IGBT 600V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60B3IXYSIGBT Modules 48 Amps 600V
товар відсутній
IXGH48N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
товар відсутній
IXGH48N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1458.65 грн
IXGH48N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
1+1750.38 грн
IXGH48N60B3C1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+510.13 грн
3+ 411.46 грн
6+ 388.77 грн
25+ 381.45 грн
30+ 375.59 грн
IXGH48N60B3D1LITTELFUSEDescription: LITTELFUSE - IXGH48N60B3D1 - TRANSISTOR, IGBT, 600V, 48A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 48
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.8
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
товар відсутній
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 14-21 дні (днів)
1+612.16 грн
3+ 512.75 грн
6+ 466.52 грн
25+ 457.74 грн
30+ 450.71 грн
90+ 445.44 грн
IXGH48N60B3D1IXYSDescription: IGBT 600V 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
2+538.23 грн
10+ 485.93 грн
25+ 429.14 грн
50+ 380.14 грн
100+ 304.34 грн
Мінімальне замовлення: 2
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3D1IXYSIGBTs 75 Amps 600V 1.05 V Rds
на замовлення 606 шт:
термін постачання 21-30 дні (днів)
1+560.88 грн
10+ 483.35 грн
30+ 378.14 грн
120+ 342.99 грн
270+ 328.94 грн
510+ 306.45 грн
1020+ 267.09 грн
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
21+579.64 грн
24+ 523.3 грн
27+ 462.15 грн
50+ 409.38 грн
100+ 327.75 грн
Мінімальне замовлення: 21
IXGH48N60C3
Код товару: 155510		Транзистори > IGBT
товар відсутній
IXGH48N60C3IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3IXYSIGBT Transistors 48 Amps 600V
товар відсутній
IXGH48N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60C3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH48N60C3 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 75
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.3
Betriebstemperatur, max.: 150
Produktpalette: GenX3
SVHC: No SVHC (16-Jan-2020)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
IXGH48N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60C3C1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3C1IXYSIGBT Transistors 75Amps 600V
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
IXGH48N60C3D1IXYSDescription: IGBT PT 600V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
1+685.03 грн
30+ 526.39 грн
120+ 470.98 грн
IXGH48N60C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH48N60C3D1 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.3V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: No SVHC (12-Jan-2017)
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
2+709.62 грн
5+ 637.87 грн
10+ 566.12 грн
50+ 497.86 грн
100+ 433.88 грн
250+ 425.09 грн
Мінімальне замовлення: 2
IXGH48N60C3D1IXYSIGBTs 30 Amps 600V
на замовлення 1095 шт:
термін постачання 21-30 дні (днів)
1+746.2 грн
10+ 630.46 грн
30+ 470.91 грн
120+ 456.86 грн
510+ 394.3 грн
1020+ 362.67 грн
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH48N60C3D1
Код товару: 108583		Транзистори > IGBT
товар відсутній
IXGH48N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
на замовлення 301 шт:
термін постачання 21-30 дні (днів)
1+640.23 грн
2+ 429.04 грн
6+ 405.61 грн
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH48N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
кількість в упаковці: 1 шт
на замовлення 301 шт:
термін постачання 14-21 дні (днів)
1+768.28 грн
2+ 534.64 грн
6+ 486.73 грн
IXGH4N250CIXYSIGBT Modules High Voltage IGBTs
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
IXGH4N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXGH4N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGH4N250CIXYSDescription: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
товар відсутній
IXGH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
IXGH50N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 460W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH50N120C3IXYSDescription: IGBT 1200V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+1113.08 грн
IXGH50N120C3IXYSIGBTs 75Amps 1200V
товар відсутній
IXGH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
товар відсутній
IXGH50N60AIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH50N60BIXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH50N60B2IXYSDescription: IGBT 600V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/190ns
Switching Energy: 550µJ (off)
Test Condition: 480V, 40A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGH50N60C2IXYSDescription: IGBT 600V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/115ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 400 W
товар відсутній
IXGH50N60C4IXYSDescription: IGBT 600V 90A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/270ns
Switching Energy: 950µJ (on), 840µJ (off)
Test Condition: 400V, 36A, 10Ohm, 15V
Gate Charge: 113 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 300 W
товар відсутній
IXGH50N90B2IXYSDescription: IGBT 900V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
300+657.97 грн
Мінімальне замовлення: 300
IXGH50N90B2IXYSIGBTs 50 Amps 900V 2.7 Rds
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+972.52 грн
10+ 843.85 грн
30+ 714.1 грн
60+ 674.04 грн
120+ 663.5 грн
IXGH50N90B2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
1+599.23 грн
3+ 397.55 грн
6+ 376.32 грн
IXGH50N90B2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
на замовлення 179 шт:
термін постачання 14-21 дні (днів)
1+719.08 грн
3+ 495.41 грн
6+ 451.59 грн
IXGH50N90B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+743.52 грн
2+ 494.2 грн
5+ 467.11 грн
IXGH50N90B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
1+892.22 грн
2+ 615.84 грн
5+ 560.53 грн
IXGH50N90B2D1LittelfuseTrans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH50N90B2D1IXYSDescription: IGBT PT 900V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
1+1132.09 грн
30+ 882.38 грн
IXGH50N90B2D1LittelfuseTrans IGBT Chip N-CH 900V 75A 400W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH50N90B2D1LITTELFUSEDescription: LITTELFUSE - IXGH50N90B2D1 - IGBT, 75 A, 2.2 V, 400 W, 900 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 400W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: HiPerFAST Series
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: Boric acid (14-Jun-2023)
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
1+1196.1 грн
5+ 1082.56 грн
10+ 968.23 грн
50+ 872.71 грн
100+ 781.25 грн
250+ 765.71 грн
IXGH50N90B2D1IXYSIGBTs 50 Amps 900V 2.7 Rds
на замовлення 234 шт:
термін постачання 21-30 дні (днів)
1+1234.1 грн
10+ 1071.79 грн
30+ 848.35 грн
60+ 827.97 грн
120+ 794.23 грн
270+ 790.71 грн
510+ 778.06 грн
IXGH56N60A3LittelfuseTrans IGBT Chip N-CH 600V 150A 330000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH56N60A3IXYSDescription: IGBT 600V 150A 330W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
товар відсутній
IXGH56N60A3IXYSIGBT Modules GenX3 600V IGBTs
товар відсутній
IXGH56N60B3IXYSIGBT Transistors Disc IGBT PT-Mid Frequency TO-247AD
товар відсутній
IXGH56N60B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-24
товар відсутній
IXGH56N60B3D1IXYSDescription: IGBT 600V 330W TO247
товар відсутній
IXGH56N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 56A 330000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH56N60B3D1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGH60N30C3LittelfuseTrans IGBT Chip N-CH 300V 75A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N30C3IXYSIGBT Transistors 60 Amps 300V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
IXGH60N30C3LittelfuseTrans IGBT Chip N-CH 300V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
4+195.18 грн
10+ 189.5 грн
25+ 186.01 грн
50+ 173.82 грн
Мінімальне замовлення: 4
IXGH60N30C3IXYSDescription: IGBT 300V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/108ns
Switching Energy: 150µJ (on), 300µJ (off)
Test Condition: 200V, 30A, 5Ohm, 15V
Gate Charge: 101 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 300 W
товар відсутній
IXGH60N60IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH60N60IXYSIGBT Transistors HIGH SPEED IGBT N-CHAN 600V 75A
товар відсутній
IXGH60N60B2IXYSDescription: IGBT 600V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
IXGH60N60C2
Код товару: 30178		Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 75 A
Ic 100: 60 A
Pd 25: 480 W
товар відсутній
IXGH60N60C2IXYSIGBT Transistors 60 Amps 600V 2.5 V Rds
товар відсутній
IXGH60N60C2IXYSDescription: IGBT 600V 75A 480W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
IXGH60N60C3IXYSIGBTs GenX3 600V IGBT
товар відсутній
IXGH60N60C3IXYSDescription: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 380 W
товар відсутній
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
товар відсутній
IXGH60N60C3
Код товару: 113398		Транзистори > IGBT
товар відсутній
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 380W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH60N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
на замовлення 353 шт:
термін постачання 21-30 дні (днів)
1+816.06 грн
2+ 615.73 грн
4+ 582.05 грн
30+ 576.93 грн
IXGH60N60C3D1
Код товару: 148221		Транзистори > IGBT
товар відсутній
IXGH60N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH60N60C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH60N60C3D1 - IGBT, 75 A, 2.2 V, 380 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 380W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: No SVHC (12-Jan-2017)
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+904.37 грн
5+ 818.42 грн
10+ 731.69 грн
50+ 659.66 грн
100+ 590.67 грн
IXGH60N60C3D1IXYSIGBTs 60 Amps 600V
на замовлення 154 шт:
термін постачання 21-30 дні (днів)
1+952.02 грн
10+ 826.88 грн
30+ 699.34 грн
60+ 659.28 грн
120+ 633.98 грн
270+ 619.22 грн
IXGH60N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
кількість в упаковці: 1 шт
на замовлення 353 шт:
термін постачання 14-21 дні (днів)
1+979.27 грн
2+ 767.3 грн
4+ 698.46 грн
30+ 692.31 грн
510+ 671.23 грн
IXGH60N60C3D1IXYSDescription: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 380 W
товар відсутній
IXGH64N60A3LittelfuseTrans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH64N60A3IXYSIGBT Modules GenX3 600V IGBTs
товар відсутній
IXGH64N60A3IXYSDescription: IGBT 600V 460W TO247
товар відсутній
IXGH64N60B3IXYSDescription: IGBT 600V 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGH64N60B3IXYSIGBTs GenX3 600V IGBTs
товар відсутній
IXGH6N170IXYSIGBTs 12 Amps 1700 V 4 V Rds
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
1+806.06 грн
10+ 681.38 грн
30+ 484.27 грн
120+ 462.48 грн
270+ 461.78 грн
510+ 435.07 грн
1020+ 399.22 грн
IXGH6N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH6N170LittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH6N170IXYSDescription: IGBT 1700V 12A 75W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/250ns
Switching Energy: 1.5mJ (off)
Test Condition: 1360V, 6A, 33Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 75 W
на замовлення 1320 шт:
термін постачання 21-31 дні (днів)
1+739.01 грн
30+ 568.27 грн
120+ 508.45 грн
510+ 421.03 грн
1020+ 378.92 грн
IXGH6N170LittelfuseTrans IGBT Chip N-CH 1700V 12A 75W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH6N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
товар відсутній
IXGH6N170AIXYSIGBTs 12 Amps 1700 V 7 V Rds
на замовлення 300 шт:
термін постачання 266-275 дні (днів)
1+754.4 грн
10+ 695.93 грн
30+ 493.41 грн
IXGH6N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH6N170AIXYSDescription: IGBT 1700V 6A 75W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 590µJ (on), 180µJ (off)
Test Condition: 850V, 6A, 33Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 14 A
Power - Max: 75 W
товар відсутній
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75W 3-Pin(3+Tab) TO-247AD
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
1+729.49 грн
10+ 683.97 грн
25+ 559.72 грн
50+ 534.34 грн
100+ 437.53 грн
IXGH6N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75W 3-Pin(3+Tab) TO-247AD
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
16+785.6 грн
17+ 736.58 грн
25+ 602.78 грн
50+ 575.44 грн
100+ 471.18 грн
Мінімальне замовлення: 16
IXGH72N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
товар відсутній
IXGH72N60A3LittelfuseTrans IGBT Chip N-CH 600V 75A 540W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60A3IXYSIGBTs 72 Amps 600V 1.35 Rds
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+746.2 грн
10+ 553.68 грн
120+ 406.25 грн
IXGH72N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
IXGH72N60A3LittelfuseTrans IGBT Chip N-CH 600V 78A 540000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60A3IXYSDescription: IGBT 600V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
1+746.62 грн
10+ 496.25 грн
100+ 370.29 грн
500+ 313.94 грн
IXGH72N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 540000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60B3IXYSDescription: IGBT 600V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/150ns
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXGH72N60C3IXYSDescription: IGBT 600V 75A 540W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 174 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 540 W
товар відсутній
IXGH72N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 540W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH72N60C3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A
товар відсутній
IXGH72N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
товар відсутній
IXGH72N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товар відсутній
IXGH72N60C3
Код товару: 73163		Транзистори > IGBT
товар відсутній
IXGH85N30C3IXYSDescription: IGBT 300V 75A 333W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 200µJ (on), 390µJ (off)
Test Condition: 200V, 42.5A, 3.3Ohm, 15V
Gate Charge: 136 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 333 W
товар відсутній
IXGH85N30C3IXYSIGBTs 85 Amps 300V
товар відсутній
IXGH90N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 660000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH90N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
товар відсутній
IXGH90N60B3IXYSDescription: IGBT 600V 75A 660W TO247
товар відсутній
IXGH90N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
товар відсутній
IXGI48N60C3IXYSLittelfuse
товар відсутній
IXGJ40N60C2D1IXYSIGBT Transistors 40 Amps 600V 2.7 V Rds
товар відсутній
IXGJ40N60C2D1IXYSDescription: IGBT 600V 75A 300W TO268
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK 50N60A2D1IXYSLittelfuse
товар відсутній
IXGK100N170IXYSIGBTs HIGH VOLT NPT IGBTS 1700V 100A
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
1+3947.48 грн
10+ 3656.68 грн
25+ 2892.26 грн
100+ 2699.67 грн
250+ 2646.26 грн
IXGK100N170IXYSDescription: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+3621.32 грн
IXGK100N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
кількість в упаковці: 1 шт
товар відсутній
IXGK100N170LittelfuseTrans IGBT Chip N-CH 1700V 170A 830000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK100N170LittelfuseTrans IGBT Chip N-CH 1700V 170A 830W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK100N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
товар відсутній
IXGK120N120A3IXYSDescription: IGBT PT 1200V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+3552.13 грн
25+ 3005.83 грн
100+ 2798.54 грн
IXGK120N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
кількість в упаковці: 1 шт
товар відсутній
IXGK120N120A3LittelfuseTrans IGBT Chip N-CH 1200V 240A 830000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK120N120A3LittelfuseTrans IGBT Chip N-CH 1200V 240A 830W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK120N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
IXGK120N120A3IXYSIGBT Transistors 120 Amps 1200V
товар відсутній
IXGK120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
товар відсутній
IXGK120N120B3IXYSIGBTs 200Amps 1200V
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+4013.08 грн
10+ 3524.93 грн
25+ 2968.87 грн
IXGK120N120B3IXYSDescription: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
300+1846.45 грн
Мінімальне замовлення: 300
IXGK120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
IXGK120N60BIXYSDescription: IGBT 600V 200A 660W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
товар відсутній
IXGK120N60B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
IXGK120N60C2IXYSDescription: IGBT 600V 75A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/120ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 370 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 830 W
товар відсутній
IXGK28N140B3H1IXYSIGBT Transistors 28 Amps 1400V
товар відсутній
IXGK28N140B3H1IXYSDescription: IGBT 1400V 60A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGK28N140B3H1
на замовлення 2500 шт:
термін постачання 14-28 дні (днів)
IXGK300N60B3IXYSIGBT Modules 300 Amps 600V 1.6 Rds
товар відсутній
IXGK300N60B3IXYSDescription: IGBT 600V 1000W TO264AA
Packaging: Tube
товар відсутній
IXGK320N60A3IXYSIGBT Transistors 320 Amps 600V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
IXGK320N60A3IXYSDescription: IGBT 600V 320A 1000W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Gate Charge: 560 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1000 W
товар відсутній
IXGK320N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товар відсутній
IXGK320N60B3LittelfuseTrans IGBT Chip N-CH 600V 500A 1700000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK320N60B3IXYSIGBTs GenX3 600V IGBTs
на замовлення 152 шт:
термін постачання 21-30 дні (днів)
1+2934.78 грн
10+ 2718.26 грн
25+ 2171.13 грн
IXGK320N60B3IXYSDescription: IGBT 600V 500A 1700W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
на замовлення 744 шт:
термін постачання 21-31 дні (днів)
1+2691.47 грн
25+ 2172.12 грн
100+ 2027.33 грн
IXGK320N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
товар відсутній
IXGK35N120BIXYSIGBT Transistors 70 Amps 1200V 3.3 V Rds
товар відсутній
IXGK35N120BIXYSDescription: IGBT 1200V 70A 350W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
товар відсутній
IXGK35N120BD1IXYSDescription: IGBT 1200V 70A 350W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
товар відсутній
IXGK35N120BD1IXYSIGBT Transistors 70 Amps 1200V 3.3 V Rds
товар відсутній
IXGK35N120CD1IXYSIGBT Transistors 70 Amps 1200V 4 V Rds
товар відсутній
IXGK35N120CD1IXYSDescription: IGBT 1200V 70A 350W PLUS247
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
товар відсутній
IXGK400N30A3IXYSIGBT Transistors 400 Amps 300V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1908.96 грн
10+ 1705.48 грн
25+ 1316.45 грн
100+ 1290.45 грн
250+ 1210.32 грн
500+ 1196.26 грн
IXGK400N30A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Mounting: THT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Turn-on time: 0.1µs
Turn-off time: 565ns
Type of transistor: IGBT
Power dissipation: 1kW
Kind of package: tube
Gate charge: 560nC
Technology: GenX3™; PT
Case: TO264
товар відсутній
IXGK400N30A3IXYSDescription: IGBT PT 300V 400A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Gate Charge: 560 nC
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1000 W
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+1792.79 грн
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK400N30A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Mounting: THT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Turn-on time: 0.1µs
Turn-off time: 565ns
Type of transistor: IGBT
Power dissipation: 1kW
Kind of package: tube
Gate charge: 560nC
Technology: GenX3™; PT
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
10+1246.14 грн
Мінімальне замовлення: 10
IXGK400N30B3IXYSIGBT Transistors 400 Amps 300V
товар відсутній
IXGK400N30B3IXYSDescription: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGK400N30C3IXYSIGBT Transistors 400 Amps 300V
товар відсутній
IXGK400N30C3IXYSDescription: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGK50N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXGK50N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
товар відсутній
IXGK50N120C3H1IXYSIGBT Transistors High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGK50N120C3H1IXYSDescription: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGK50N60A2U1IXYSDescription: IGBT 600V 75A 400W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 20ns/410ns
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 50A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGK50N60AU1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60AU1IXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGK50N60BIXYSDescription: IGBT 600V 75A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60B2D1IXYSDescription: IGBT 600V 75A 400W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/190ns
Switching Energy: 550µJ (off)
Test Condition: 480V, 40A, 5Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGK50N60BD1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60BU1IXYSIGBTs 75 Amps 600V 2.3 Rds
товар відсутній
IXGK50N60BU1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60C2D1IXYSIGBTs 50 Amps 600V 2.5V Rds
товар відсутній
IXGK50N60C2D1IXYSDescription: IGBT 600V 75A 480W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/115ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
IXGK50N90B2D1IXYSIGBT Transistors 50 Amps 600V 3 Rds
товар відсутній
IXGK50N90B2D1IXYSDescription: IGBT 900V 75A 400W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGK55N120A3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
товар відсутній
IXGK55N120A3H1IXYSIGBT Modules Low-Frequency Range Low Vcesat w/ Diode
товар відсутній
IXGK55N120A3H1IXYSDescription: IGBT 1200V 125A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK55N120A3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
IXGK60N60IXYSDescription: IGBT 600V 75A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK60N60B2D1IXYSTO-264 09+
на замовлення 400 шт:
термін постачання 14-28 дні (днів)
IXGK60N60B2D1IXYSDescription: IGBT 600V 75A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
IXGK60N60B2D1IXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGK60N60C2D1IXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGK60N60C2D1IXYSDescription: IGBT 600V 75A 480W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
IXGK60N60C2D1IXYSIGBT Transistors 60 Amps 600V 2.5 V Rds
товар відсутній
IXGK64N60B3D1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
IXGK64N60B3D1IXYSDescription: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK64N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK72N60A3H1IXYSIGBT Transistors 75Amps 600V
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
IXGK72N60A3H1IXYSDescription: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXGK72N60B3H1LittelfuseTrans IGBT Chip N-CH 600V 178A 540W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK72N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
кількість в упаковці: 1 шт
товар відсутній
IXGK72N60B3H1IXYSIGBTs Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGK72N60B3H1IXYSDescription: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
300+891.54 грн
Мінімальне замовлення: 300
IXGK72N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товар відсутній
IXGK72N60C3H1IXYSIGBTs 75Amps 600V
товар відсутній
IXGK72N60C3H1IXYSDescription: IGBT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXGK)
Part Status: Active
товар відсутній
IXGK75N250IXYSDescription: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
1+8014.35 грн
25+ 6721.6 грн
100+ 6373.07 грн
IXGK75N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGK75N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
товар відсутній
IXGK75N250LittelfuseTrans IGBT Chip N-CH 2500V 170A 780000mW 3-Pin(3+Tab) TO-264AA
товар відсутній
IXGK75N250LittelfuseTrans IGBT Chip N-CH 2500V 170A 780W 3-Pin(3+Tab) TO-264AA
товар відсутній
IXGK75N250IXYSIGBTs TO264 2500V 75A IGBT
на замовлення 425 шт:
термін постачання 21-30 дні (днів)
1+8631.32 грн
10+ 7833.91 грн
25+ 6497.91 грн
50+ 6354.53 грн
100+ 6284.25 грн
IXGK82N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
товар відсутній
IXGK82N120A3IXYSIGBT Transistors GenX3 1200V IGBTs
товар відсутній
IXGK82N120A3IXYSDescription: IGBT 1200V 260A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
товар відсутній
IXGK82N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
товар відсутній
IXGK82N120B3IXYSIGBT Transistors GenX3 1200V IGBTs
товар відсутній
IXGK82N120B3IXYSDescription: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
товар відсутній
IXGK82N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
кількість в упаковці: 1 шт
товар відсутній
IXGK82N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
товар відсутній
IXGL200N60B3IXYSIGBT Transistors 150Amps 600V
товар відсутній
IXGL200N60B3IXYSDescription: IGBT 600V 150A 400W ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 400 W
товар відсутній
IXGL50N60BD1IXYSDescription: IGBT 600V ISOPLUS264
товар відсутній
IXGL75N250IXYSDescription: IGBT 2500V 110A 430W I5-PAK
товар відсутній
IXGM17N100AIXYSDescription: POWER MOSFET TO-3
товар відсутній
IXGM20N60IXYSDescription: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM20N60AIXYSDescription: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100AIXYSTO-3 9352+
на замовлення 70 шт:
термін постачання 14-28 дні (днів)
IXGM25N100AIXYSDescription: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGM40N60IXYSDescription: IGBT 600V 75A 250W TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGM40N60AIXYSDescription: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
товар відсутній
IXGM40N60ALIXYSDescription: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
товар відсутній
IXGN100N120IXYSIGBT Transistors G-series
товар відсутній
IXGN100N120IXYSDescription: IGBT MODULE 1200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGN100N160AIXYSDescription: IGBT MODULE 1600V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
товар відсутній
IXGN100N160AIXYSIGBT Transistors 100 Amps 1600V
товар відсутній
IXGN100N170LittelfuseTrans IGBT Module N-CH 1700V
товар відсутній
IXGN100N170LittelfuseTrans IGBT Module N-CH 1700V
товар відсутній
IXGN100N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Collector current: 95A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
товар відсутній
IXGN100N170IXYSIGBTs HIGH VOLT NPT IGBTS 1700V 95A
на замовлення 294 шт:
термін постачання 21-30 дні (днів)
1+4251.7 грн
10+ 3810.26 грн
20+ 3240.87 грн
50+ 3233.85 грн
100+ 2982.22 грн
500+ 2981.52 грн
IXGN100N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Collector current: 95A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
кількість в упаковці: 1 шт
товар відсутній
IXGN100N170IXYSDescription: IGBT MOD 1700V 160A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.22 nF @ 25 V
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
1+3899.59 грн
10+ 3414.06 грн
100+ 3072.65 грн
IXGN120N60A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A
товар відсутній
IXGN120N60A3IXYSDescription: IGBT MOD 600V 200A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V
товар відсутній
IXGN120N60A3D1IXYSDescription: IGBT MOD 600V 200A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V
товар відсутній
IXGN120N60A3D1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A
товар відсутній
IXGN120N60A3D1LittelfuseTrans IGBT Module N-CH 600V 200A 595000mW
товар відсутній
IXGN200N170LITTELFUSEDescription: LITTELFUSE - IXGN200N170 - IGBT-Modul, Einfach, 280 A, 2.1 V, 1.25 kW, 150 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: -
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.1V
Dauer-Kollektorstrom: 280A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.1V
Verlustleistung Pd: 1.25kW
euEccn: NLR
Verlustleistung: 1.25kW
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 1.7kV
Produktpalette: TUK SGACK902S Keystone Coupler
Kollektor-Emitter-Spannung, max.: 1.7kV
IGBT-Konfiguration: Einfach
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 280A
Betriebstemperatur, max.: 150°C
SVHC: Boric acid (14-Jun-2023)
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
1+4664.54 грн
5+ 4452.44 грн
10+ 4240.35 грн
50+ 3564.07 грн
IXGN200N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
кількість в упаковці: 1 шт
товар відсутній
IXGN200N170IXYSIGBTs SOT227 1700V 160A IGBT
на замовлення 460 шт:
термін постачання 21-30 дні (днів)
1+4198.4 грн
10+ 3761.76 грн
20+ 3245.79 грн
50+ 3216.27 грн
100+ 3196.59 грн
IXGN200N170IXYSDescription: IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
товар відсутній
IXGN200N170LittelfuseIGBT Module, High Voltage IGBT
товар відсутній
IXGN200N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
товар відсутній
IXGN200N60IXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
IXGN200N60IXYSIGBT Transistors 200 Amps 600V
товар відсутній
IXGN200N60AIXYSMODULE
на замовлення 150 шт:
термін постачання 14-28 дні (днів)
IXGN200N60AIXYS
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
IXGN200N60AIXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
IXGN200N60A2IXYSDescription: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
товар відсутній
IXGN200N60BIXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
IXGN200N60BIXYSMODULE
на замовлення 268 шт:
термін постачання 14-28 дні (днів)
IXGN200N60BIXYSTO220
на замовлення 20000 шт:
термін постачання 14-28 дні (днів)
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
кількість в упаковці: 1 шт
товар відсутній
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
IXGN200N60B3IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
1+4188.56 грн
10+ 3331.75 грн
20+ 2843.06 грн
50+ 2839.54 грн
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
товар відсутній
IXGN200N60B3
Код товару: 176713		Транзистори > IGBT
товар відсутній
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGN200N60B3 - IGBT-Modul, Einfach, 300 A, 1.35 V, 830 W, 150 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: Y-EX
IGBT-Technologie: PT IGBT [Standard]
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.35V
Dauer-Kollektorstrom: 300A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35V
Verlustleistung Pd: 830W
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: IGBT Module GenX3
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Einfach
productTraceability: No
Wandlerpolarität: n-Kanal
DC-Kollektorstrom: 300A
Betriebstemperatur, max.: 150°C
SVHC: Lead (17-Jan-2023)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+3251.62 грн
IXGN200N60B3IXYSDescription: IGBT MOD 600V 300A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
1+3958.89 грн
10+ 2900.02 грн
100+ 2774.84 грн
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B
товар відсутній
IXGN20N90
Код товару: 104856		Транзистори > IGBT
товар відсутній
IXGN320N60A3IXYSIGBTs 320 Amps 600V
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
1+2401.78 грн
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN320N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXGN320N60A3LITTELFUSEDescription: LITTELFUSE - IXGN320N60A3 - TRANSISTOR, IGBT, 600V, 320A, SOT-227B
tariffCode: 85412900
Transistormontage: Panel
rohsCompliant: YES
IGBT-Technologie: -
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.46V
Dauer-Kollektorstrom: 320A
usEccn: EAR99
IGBT-Anschluss: Tab
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.46V
Verlustleistung Pd: 735W
euEccn: NLR
Verlustleistung: 735W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 600V
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Single
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 320A
Betriebstemperatur, max.: 150°C
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
1+2892.87 грн
5+ 2735.17 грн
10+ 2577.48 грн
25+ 2271.11 грн
100+ 2020.04 грн
IXGN320N60A3IXYSDescription: IGBT MOD 600V 320A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 1823 шт:
термін постачання 21-31 дні (днів)
1+2123.52 грн
10+ 2011.56 грн
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735000mW 4-Pin SOT-227B
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN320N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN400N30A3LittelfuseTrans IGBT Module N-CH 300V 400A 735000mW
товар відсутній
IXGN400N30A3IXYSIGBT Transistors 400 Amps 300V 1.15 V Rds
товар відсутній
IXGN400N30A3IXYSDescription: IGBT MOD 300V 400A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
товар відсутній
IXGN400N60A3IXYSIGBTs 400 Amps 600V
на замовлення 301 шт:
термін постачання 21-30 дні (днів)
1+4902.78 грн
10+ 4390.61 грн
IXGN400N60A3LittelfuseTrans IGBT Module N-CH 600V
товар відсутній
IXGN400N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN400N60A3IXYSDescription: IGBT MOD 600V 400A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
товар відсутній
IXGN400N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXGN400N60A3LittelfuseTrans IGBT Module N-CH 600V
товар відсутній
IXGN400N60B3IXYSDescription: IGBT MOD 600V 430A 1000W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
1+4383.9 грн
10+ 3837.6 грн
100+ 3453.84 грн
IXGN400N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
товар відсутній
IXGN400N60B3LittelfuseTrans IGBT Module N-CH 600V 430A 1000000mW 4-Pin SOT-227B
товар відсутній
IXGN400N60B3IXYSIGBT Modules Mid-Frequency Range PT IGBTs
на замовлення 121 шт:
термін постачання 21-30 дні (днів)
1+3804.8 грн
10+ 3341.45 грн
20+ 2732.71 грн
50+ 2641.34 грн
100+ 2550.67 грн
200+ 2509.2 грн
IXGN400N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
кількість в упаковці: 1 шт
товар відсутній
IXGN40N60CD1IXYSDescription: IGBT MODULE 600V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXGN50N120C3H1IXYSDescription: IGBT MOD 1200V 95A 460W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товар відсутній
IXGN50N120C3H1IXYSIGBT Modules High Frequency Range >40khz CIGBT w/Diode
товар відсутній
IXGN50N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
кількість в упаковці: 1 шт
товар відсутній
IXGN50N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
товар відсутній
IXGN50N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 95A 460000mW 4-Pin SOT-227B
товар відсутній
IXGN50N60BIXYSDescription: IGBT MOD 600V 75A 300W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
товар відсутній
IXGN50N60BD2IXYSDescription: IGBT MOD 600V 75A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
товар відсутній
IXGN50N60BD3IXYSDescription: IGBT MOD 600V 75A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
товар відсутній
IXGN50N60BD3ABB07+;
на замовлення 500 шт:
термін постачання 14-28 дні (днів)
IXGN50N60BD3IXYSMODULE
на замовлення 80 шт:
термін постачання 14-28 дні (днів)
IXGN50N60BD3IXYS
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
IXGN60N60IXYS
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
IXGN60N60IXYSDescription: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
IXGN60N60
Код товару: 173038		Транзистори > IGBT
товар відсутній
IXGN60N60ABB07+;
на замовлення 500 шт:
термін постачання 14-28 дні (днів)
IXGN60N60IXYSIGBT Transistors ULTRA LOW VCE 600V 100A
товар відсутній
IXGN60N60C2IXYS60A/600V/IGBT/1U
на замовлення 58 шт:
термін постачання 14-28 дні (днів)
IXGN60N60C2IXYSDescription: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
IXGN60N60C2IXYSIGBT Transistors 60 Amps 600V 1.7 V Rds
товар відсутній
IXGN60N60C2D1IXYSIGBT Transistors 60 Amps 600V 1.7 V Rds
товар відсутній
IXGN60N60C2D1IXYS60A/600V/IGBT/1U
на замовлення 59 шт:
термін постачання 14-28 дні (днів)
IXGN60N60C2D1
Код товару: 36189		Транзистори > IGBT
товар відсутній
IXGN60N60C2D1IXYSSOP8
на замовлення 20000 шт:
термін постачання 14-28 дні (днів)
IXGN60N60C2D1IXYSDescription: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
IXGN72N60A3IXYSDescription: IGBT MOD 600V 160A 360W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
IXGN72N60A3IXYSIGBT Transistors 72 Amps 600V
товар відсутній
IXGN72N60A3LittelfuseTrans IGBT Module N-CH 600V 160A 360000mW
товар відсутній
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
товар відсутній
IXGN72N60C3H1IXYSDescription: IGBT MOD 600V 78A 360W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.78 nF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
10+1810.81 грн
30+ 1626.8 грн
100+ 1525.12 грн
250+ 1335.85 грн
500+ 1221.35 грн
Мінімальне замовлення: 10
IXGN72N60C3H1IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
на замовлення 576 шт:
термін постачання 21-30 дні (днів)
1+2344.38 грн
10+ 1964.94 грн
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
товар відсутній
IXGN72N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
товар відсутній
IXGN72N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN80N60A2IXYSDescription: IGBT MOD 600V 160A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
товар відсутній
IXGN80N60A2D1IXYSDescription: IGBT MOD 600V 160A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 650 µA
товар відсутній
IXGN82N120B3H1LittelfuseTrans IGBT Module N-CH 1200V
товар відсутній
IXGN82N120B3H1LittelfuseTrans IGBT Module N-CH 1200V
товар відсутній
IXGN82N120B3H1IXYSDescription: IGBT MOD 1200V 145A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
товар відсутній
IXGN82N120B3H1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGN82N120C3H1LittelfuseTrans IGBT Module N-CH
товар відсутній
IXGN82N120C3H1IXYSDescription: IGBT MOD 1200V 130A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
товар відсутній
IXGN82N120C3H1IXYSIGBT Transistors 130Amps 1200V
товар відсутній
IXGN82N120C3H1LittelfuseTrans IGBT Module N-CH
товар відсутній
IXGN82N120C3H1
Код товару: 179639		Транзистори > IGBT
товар відсутній
IXGP10N60AIXYSDescription: IGBT 600V 20A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 10A
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
IXGP12N100IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGP12N100IXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N100AIXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N100AIXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGP12N100AU1IXYSIGBTs 24Amps 1000V
товар відсутній
IXGP12N100AU1IXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 4mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N120A2IXYSDescription: IGBT 1200V 24A 75W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/680ns
Switching Energy: 5.4mJ (off)
Test Condition: 960V, 12A, 100Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
товар відсутній
IXGP12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
IXGP12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGP12N120A3IXYSIGBTs GenX3 1200V IGBTs
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
2+306.68 грн
10+ 240.06 грн
50+ 208.05 грн
100+ 178.53 грн
500+ 158.14 грн
1000+ 135.65 грн
2500+ 130.03 грн
Мінімальне замовлення: 2
IXGP12N120A3IXYSDescription: IGBT 1200V 22A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Gate Charge: 20.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
на замовлення 1168 шт:
термін постачання 21-31 дні (днів)
2+285.11 грн
30+ 217.57 грн
120+ 186.49 грн
510+ 155.57 грн
1020+ 133.2 грн
Мінімальне замовлення: 2
IXGP12N60BIXYSDescription: IGBT 600V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N60CIXYSDescription: IGBT 600V 24A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N60CD1IXYSDescription: IGBT 600V 24A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP15N100CIXYSDescription: IGBT 1000V 30A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 850µJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGP15N100CIXYSIGBT Transistors 30 Amps 1000V 3.5 Rds
товар відсутній
IXGP15N120BIXYSDescription: IGBT 1200V 30A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGP15N120CIXYSDescription: IGBT 1200V 30A 200W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
товар відсутній
IXGP16N60B2IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP16N60B2D1
Код товару: 122366		Транзистори > IGBT
товар відсутній
IXGP16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP16N60C2IXYSIGBT Transistors 16 Amps 600V 3.0 V Rds
товар відсутній
IXGP16N60C2IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3.0 V Rds
товар відсутній
IXGP16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP20N100IXYSIGBT Transistors 40 Amps 1000V 3 Rds
товар відсутній
IXGP20N100IXYSDescription: IGBT 1000V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGP20N120IXYSDescription: IGBT 1200V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGP20N120Ixys CorporationTrans IGBT Chip N-CH 1200V 40A 150W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120IXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
товар відсутній
IXGP20N120LittelfuseTrans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 14-21 дні (днів)
1+449.42 грн
3+ 389.58 грн
4+ 298.71 грн
10+ 282.9 грн
IXGP20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120A3IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
на замовлення 600 шт:
термін постачання 420-429 дні (днів)
1+517.42 грн
10+ 469.61 грн
50+ 354.24 грн
100+ 320.5 грн
IXGP20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
2+374.52 грн
3+ 312.62 грн
4+ 248.93 грн
10+ 235.75 грн
Мінімальне замовлення: 2
IXGP20N120A3IXYSDescription: IGBT 1200V 40A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+474.43 грн
IXGP20N120A3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGP20N120A3 - IGBT, 40 A, 2.5 V, 180 W, 1.2 kV, TO-220AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.5V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 180W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 40A
SVHC: No SVHC (17-Jan-2023)
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
2+491.21 грн
5+ 458.1 грн
10+ 424.98 грн
Мінімальне замовлення: 2
IXGP20N120BIXYSDescription: IGBT 1200V 40A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 190 W
товар відсутній
IXGP20N120B3IXYSIGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
товар відсутній
IXGP20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(3+Tab) TO-220
товар відсутній
IXGP20N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
2+374.52 грн
3+ 312.62 грн
4+ 248.93 грн
10+ 235.75 грн
Мінімальне замовлення: 2
IXGP20N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 14-21 дні (днів)
1+449.42 грн
3+ 389.58 грн
4+ 298.71 грн
10+ 282.9 грн
IXGP20N120B3IXYSDescription: IGBT 1200V 36A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
1+463.02 грн
50+ 355.73 грн
100+ 318.29 грн