APTMC120AM12CT3AG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB
Power dissipation: 925W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB
Power dissipation: 925W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
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Технічний опис APTMC120AM12CT3AG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB, Power dissipation: 925W, Case: SP3F, Semiconductor structure: SiC diode/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 440A, Drain-source voltage: 1.2kV, Drain current: 165A, On-state resistance: 12mΩ, кількість в упаковці: 1 шт.
Інші пропозиції APTMC120AM12CT3AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTMC120AM12CT3AG | Виробник : Microsemi Power Products Group | Description: MOSFET 2N-CH 1200V 220A SP3F |
товар відсутній |
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APTMC120AM12CT3AG | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules CC3180 |
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APTMC120AM12CT3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB Power dissipation: 925W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ |
товар відсутній |