APTMC60TLM14CAG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
кількість в упаковці: 1 шт
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Технічний опис APTMC60TLM14CAG MICROCHIP (MICROSEMI)
Description: SIC 4N-CH 1200V 219A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 925W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 219A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V, Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V, Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ), Supplier Device Package: SP6.
Інші пропозиції APTMC60TLM14CAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTMC60TLM14CAG | Виробник : Microchip Technology |
Description: SIC 4N-CH 1200V 219A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 925W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 219A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Supplier Device Package: SP6 |
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| APTMC60TLM14CAG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
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| APTMC60TLM14CAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W Power dissipation: 925W Semiconductor structure: SiC diode/transistor Case: SP6C Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor On-state resistance: 12mΩ Topology: three-level inverter; single-phase Pulsed drain current: 440A Drain current: 164A |
товар відсутній |