Технічний опис APTM50SKM19G Microchip Technology
Description: MOSFET N-CH 500V 163A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 163A (Tc), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V, Power Dissipation (Max): 1136W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V.
Інші пропозиції APTM50SKM19G
Фото | Назва | Виробник | Інформація |
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APTM50SKM19G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper Case: SP6C Electrical mounting: FASTON connectors; screw Power dissipation: 1136W Technology: POWER MOS 7® Mechanical mounting: screw Pulsed drain current: 652A Drain current: 122A Gate-source voltage: ±30V Drain-source voltage: 500V On-state resistance: 22.5mΩ кількість в упаковці: 1 шт |
товар відсутній |
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APTM50SKM19G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V |
товар відсутній |
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APTM50SKM19G | Виробник : Microchip Technology |
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товар відсутній |
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APTM50SKM19G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper Case: SP6C Electrical mounting: FASTON connectors; screw Power dissipation: 1136W Technology: POWER MOS 7® Mechanical mounting: screw Pulsed drain current: 652A Drain current: 122A Gate-source voltage: ±30V Drain-source voltage: 500V On-state resistance: 22.5mΩ |
товар відсутній |