Технічний опис APTM50TAM65FPG Microchip Technology
Description: MOSFET 6N-CH 500V 51A SP6-P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 51A, Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V, Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP6-P, Part Status: Active.
Інші пропозиції APTM50TAM65FPG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
APTM50TAM65FPG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 38A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 78mΩ Pulsed drain current: 204A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||
![]() |
APTM50TAM65FPG | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P Part Status: Active |
товар відсутній |
|
APTM50TAM65FPG | Виробник : Microchip Technology |
![]() |
товар відсутній |
||
APTM50TAM65FPG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 38A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 78mΩ Pulsed drain current: 204A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |