Технічний опис APTM60A11FT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Case: SP1, On-state resistance: 110mΩ, Gate-source voltage: ±30V, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 245A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 8®, Drain current: 30A, Drain-source voltage: 600V, кількість в упаковці: 1 шт.
Інші пропозиції APTM60A11FT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM60A11FT1G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 110mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 245A Power dissipation: 390W Technology: FREDFET; POWER MOS 8® Drain current: 30A Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTM60A11FT1G | Виробник : Microsemi Corporation |
Description: MOSFET 2N-CH 600V 40A SP1 |
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| APTM60A11FT1G | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules DOR CC8117 |
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| APTM60A11FT1G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC8117 |
товар відсутній |
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| APTM60A11FT1G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 110mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 245A Power dissipation: 390W Technology: FREDFET; POWER MOS 8® Drain current: 30A Drain-source voltage: 600V |
товар відсутній |