APT40GF120JRD Microchip Technology
Виробник: Microchip Technology
Description: IGBT NPT COMBI 1200V 40A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227 (ISOTOP®)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT NPT COMBI 1200V 40A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227 (ISOTOP®)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2990.37 грн |
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Технічний опис APT40GF120JRD Microchip Technology
Description: IGBT NPT COMBI 1200V 40A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SOT-227 (ISOTOP®), Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 390 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V.
Інші пропозиції APT40GF120JRD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT40GF120JRD | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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| APT40GF120JRD | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: NPT Mechanical mounting: screw |
товар відсутній |