APT41M80L MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
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Технічний опис APT41M80L MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 800V 43A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V.
Інші пропозиції APT41M80L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT41M80L | Виробник : Microchip Technology | Trans MOSFET N-CH Si 800V 43A 3-Pin(3+Tab) TO-264 Tube |
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APT41M80L | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 43A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V |
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APT41M80L | Виробник : Microchip Technology | Discrete Semiconductor Modules FG, MOSFET, 800V, TO-264 |
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APT41M80L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264 Case: TO264 Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® |
товар відсутній |