Технічний опис APT200GN60B2G Microchip Technology
Description: IGBT TRENCH FIELD STOP 600V 283A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/560ns, Switching Energy: 13mJ (on), 11mJ (off), Test Condition: 400V, 200A, 1Ohm, 15V, Gate Charge: 1180 nC, Current - Collector (Ic) (Max): 283 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 682 W.
Інші пропозиції APT200GN60B2G
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APT200GN60B2G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 600V 283A 682W 3-Pin(3+Tab) T-MAX Tube |
товар відсутній |
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APT200GN60B2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Case: T-Max Mounting: THT Kind of package: tube Technology: Field Stop Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Type of transistor: IGBT Power dissipation: 682W Gate charge: 1180nC Collector-emitter voltage: 600V кількість в упаковці: 1 шт |
товар відсутній |
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APT200GN60B2G | Виробник : Microchip Technology |
Description: IGBT TRENCH FIELD STOP 600V 283A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/560ns Switching Energy: 13mJ (on), 11mJ (off) Test Condition: 400V, 200A, 1Ohm, 15V Gate Charge: 1180 nC Current - Collector (Ic) (Max): 283 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 682 W |
товар відсутній |
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APT200GN60B2G | Виробник : Microchip Technology |
IGBTs IGBT Fieldstop Low Frequency Single 600 V 200 A TO-247 MAX |
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APT200GN60B2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Case: T-Max Mounting: THT Kind of package: tube Technology: Field Stop Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Type of transistor: IGBT Power dissipation: 682W Gate charge: 1180nC Collector-emitter voltage: 600V |
товар відсутній |