APT15GP90BDQ1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Type of transistor: IGBT
Collector current: 21A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Collector-emitter voltage: 900V
Power dissipation: 250W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 60nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Type of transistor: IGBT
Collector current: 21A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 23ns
Turn-off time: 170ns
Collector-emitter voltage: 900V
Power dissipation: 250W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 60nC
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 606.82 грн |
3+ | 427.1 грн |
6+ | 403.88 грн |
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Технічний опис APT15GP90BDQ1G MICROCHIP (MICROSEMI)
Description: IGBT 900V 43A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 9ns/33ns, Switching Energy: 200µJ (off), Test Condition: 600V, 15A, 4.3Ohm, 15V, Gate Charge: 60 nC, Part Status: Active, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 250 W.
Інші пропозиції APT15GP90BDQ1G за ціною від 484.65 грн до 728.19 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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APT15GP90BDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3 Type of transistor: IGBT Collector current: 21A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 60A Turn-on time: 23ns Turn-off time: 170ns Collector-emitter voltage: 900V Power dissipation: 250W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 60nC кількість в упаковці: 1 шт |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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APT15GP90BDQ1G | Виробник : Microchip Technology | Trans IGBT Chip N-CH 900V 43A 250mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT15GP90BDQ1G | Виробник : Microchip Technology |
Description: IGBT 900V 43A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 9ns/33ns Switching Energy: 200µJ (off) Test Condition: 600V, 15A, 4.3Ohm, 15V Gate Charge: 60 nC Part Status: Active Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 60 A Power - Max: 250 W |
товар відсутній |
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APT15GP90BDQ1G | Виробник : Microchip Technology | IGBT Transistors IGBT PT MOS 7 Combi 900 V 15 A TO-247 |
товар відсутній |