| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXIDM1401_1505_O | IXYS |
 Description: POWER MODULE H-BRIDGE 15V 10APackaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000VDC Part Status: Obsolete Current: 10 A Voltage: 15 V |
товар відсутній |
|||||||||||
 |
IXFA14N85XHV | IXYS |
Description: MOSFET N-CH 850V 14A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V |
на замовлення 1650 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXTY8N70X2 | IXYS |
Description: MOSFET N-CHANNEL 700V 8A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
на замовлення 1869 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXTU8N70X2 | IXYS |
Description: MOSFET N-CH 700V 8A TO251-3 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXTP8N70X2 | IXYS |
Description: MOSFET N-CH 700V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
SLMD960H09L | IXYS |
Description: MONOCRYST SOLAR CELL 162MW 5.67V |
на замовлення 59 шт: термін постачання 21-31 дні (днів) |
|||||||||||
 |
IXYT25N250CHV | IXYS |
Description: IGBT 2500V 95A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-268 Td (on/off) @ 25°C: 15ns/230ns Switching Energy: 8.3mJ (on), 7.3mJ (off) Test Condition: 1250V, 25A, 5Ohm, 15V Gate Charge: 147 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 235 A Power - Max: 937 W |
на замовлення 294 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXFH12N50F | IXYS |
Description: MOSFET N-CH 500V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFH21N50F | IXYS |
Description: MOSFET N-CH 500V 21A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247 (IXFH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFH6N100F | IXYS |
Description: MOSFET N-CH 1000V 6A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товар відсутній |
|||||||||||
 |
IXFK24N100F | IXYS |
Description: MOSFET N-CH 1000V 24A TO264 |
товар відсутній |
|||||||||||
|
|
IXFK55N50F | IXYS |
Description: MOSFET N-CH 500V 55A TO264 |
товар відсутній |
|||||||||||
 |
IXFN55N50F | IXYS |
 Description: MOSFET N-CH 500V 55A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFT12N100F | IXYS |
Description: MOSFET N-CH 1000V 12A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXYN50N170CV1 | IXYS |
Description: IGBT 1700V 120A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 22ns/236ns Switching Energy: 8.7mJ (on), 5.6mJ (off) Test Condition: 850V, 50A, 1Ohm, 15V Gate Charge: 260 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 485 A Power - Max: 880 W |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
-Series.jpg "IXYH16N170C") |
IXYH16N170C | IXYS |
Description: IGBT 1.7KV 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 11ns/140ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 100 A Power - Max: 310 W |
на замовлення 1219 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IXYH16N170CV1 | IXYS |
Description: IGBT 1.7KV 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 11ns/140ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 100 A Power - Max: 310 W |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXYL40N250CV1 | IXYS |
Description: IGBT 2500V 70A ISOPLUSI5 Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 210 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: ISOPLUSi5-Pak™ Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 11.7mJ (on), 6.9mJ (off) Test Condition: 1250V, 40A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 400 A Power - Max: 577 W |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXYX40N250CHV | IXYS |
Description: IGBT 2.5KV 70A TO247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247PLUS-HV Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 11.7mJ (on), 6.9mJ (off) Test Condition: 1250V, 40A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 380 A Power - Max: 1500 W |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXBT32N300HV | IXYS |
Description: IGBT 3000V 80A 400W TO268 |
товар відсутній |
|||||||||||
 |
IXFP60N25X3M | IXYS |
Description: MOSFET N-CH 250V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-220AB (IXFP) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXFA60N25X3 | IXYS |
Description: MOSFET N-CH 250V 60A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IXFA80N25X3 | IXYS |
Description: MOSFET N-CH 250V 80A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IXFT170N25X3HV | IXYS |
Description: MOSFET N-CH 250V 170A TO268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFN170N25X3 | IXYS |
Description: MOSFET N-CH 250V 170A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
на замовлення 578 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| IXYH12N250C | IXYS |
Description: IGBT 2500V 28A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
товар відсутній |
||||||||||||
 |
IXYH12N250CV1HV | IXYS |
Description: IGBT 2500V 28A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
товар відсутній |
|||||||||||
| IXYH16N250C | IXYS |
Description: IGBT 2500V 35A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 14ns/260ns Switching Energy: 4.75mJ (on), 3.9mJ (off) Test Condition: 1250V, 16A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 126 A Power - Max: 500 W |
товар відсутній |
||||||||||||
 |
IXYH16N250CV1HV | IXYS |
Description: IGBT 2500V 35A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 14ns/260ns Switching Energy: 4.75mJ (on), 3.9mJ (off) Test Condition: 1250V, 16A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 126 A Power - Max: 500 W |
товар відсутній |
|||||||||||
 |
IXFC24N50Q | IXYS |
Description: MOSFET N-CH 500V 21A ISOPLUS220 Packaging: Bulk Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: ISOPLUS220™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
товар відсутній |
|||||||||||
| IXFD23N60Q-72 | IXYS | Description: MOSFET N-CHANNEL 600V DIE |
товар відсутній |
||||||||||||
| IXFD24N50Q-72 | IXYS |
Description: MOSFET N-CH Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||||||||||||
| IXFD26N50Q-72 | IXYS |
Description: MOSFET N-CHANNEL 500V DIE Packaging: Bulk Package / Case: Die Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: Die Part Status: Obsolete Drain to Source Voltage (Vdss): 500 V |
товар відсутній |
||||||||||||
| IXFD26N60Q-8XQ | IXYS |
Description: MOSFET N-CH Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||||||||||||
| IXFD40N30Q-72 | IXYS |
Description: MOSFET N-CHANNEL 300V DIE Packaging: Bulk Package / Case: Die Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: Die Part Status: Obsolete Drain to Source Voltage (Vdss): 300 V |
товар відсутній |
||||||||||||
| IXFJ32N50 | IXYS |
Description: MOSFET N-CH TO-220 Packaging: Tube Part Status: Obsolete |
товар відсутній |
||||||||||||
 |
IXFJ40N30Q | IXYS |
Description: MOSFET N-CHANNEL 300V 40A TO268 Packaging: Tube Package / Case: 3-SIP Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-268 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
товар відсутній |
|||||||||||
| IXFR21N50Q | IXYS |
Description: MOSFET N-CH ISOPLUS247 Packaging: Tube Part Status: Obsolete |
товар відсутній |
||||||||||||
| IXFR32N50 | IXYS |
Description: MOSFET N-CH ISOPLUS247 Packaging: Tube Part Status: Obsolete |
товар відсутній |
||||||||||||
| IXFX60N25Q | IXYS | Description: MOSFET N-CH PLUS247 |
товар відсутній |
||||||||||||
| IXTH21N50Q | IXYS |
Description: MOSFET N-CH 500V 21A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
товар відсутній |
||||||||||||
| IXFT26N50Q TR | IXYS |
Description: MOSFET N-CH 500V 26A TO268 Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
товар відсутній |
||||||||||||
| IXFT40N30Q TR | IXYS |
Description: MOSFET N-CH 300V 40A TO268 Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V |
товар відсутній |
||||||||||||
 |
DCG100X1200NA | IXYS |
Description: DIODE MOD SCHOTTKY 1200V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 49A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 500 µA @ 1200 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
DCG130X1200NA | IXYS |
Description: DIODE MOD SCHOTTKY 1200V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 800 µA @ 1200 V |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXTP140N12T2 | IXYS |
Description: MOSFET N-CH 120V 140A TO220AB |
на замовлення 1309 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXFQ120N25X3 | IXYS |
Description: MOSFET N-CHANNEL 250V 120A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V |
на замовлення 746 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXFT120N25X3HV | IXYS |
Description: MOSFET N-CH 250V 120A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFT150N25X3HV | IXYS |
Description: MOSFET N-CH 250V 150A TO268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V |
товар відсутній |
|||||||||||
| DSA15IM150UC-TRL | IXYS |
Description: DIODE SCHOTTKY 150V 15A TO252 Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 82pF @ 24V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 150 V |
товар відсутній |
||||||||||||
|
|
IXFY36N20X3 | IXYS |
Description: MOSFET N-CH 200V 36A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V |
товар відсутній |
|||||||||||
 |
IXFA36N20X3 | IXYS |
Description: MOSFET N-CH 200V 36A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V |
на замовлення 1696 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXFQ72N20X3 | IXYS |
Description: MOSFET N-CH 200V 72A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IXFA72N20X3 | IXYS |
Description: MOSFET N-CH 200V 72A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
IXFH72N30X3 | IXYS |
Description: MOSFET N-CH 300V 72A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
IXFT100N30X3HV | IXYS |
Description: MOSFET N-CH 300V 100A TO268HV Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFT150N30X3HV | IXYS |
Description: MOSFET N-CH 300V 150A TO268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
товар відсутній |
|||||||||||
|
|
IXFH150N30X3 | IXYS |
Description: MOSFET N-CH 300V 150A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
CS19-12HO1S-TUB | IXYS |
Description: SCR 1200V 31A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.32 V Current - Off State (Max): 50 µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - On State (It (RMS)) (Max): 31 A Voltage - Off State: 1.2 kV |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| DSP8-12AS-TUB | IXYS |
Description: DIODE ARRAY GP 1200V 8A TO263 Packaging: Tube Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товар відсутній |
| IXIDM1401_1505_O |
|
Виробник: IXYS
Description: POWER MODULE H-BRIDGE 15V 10A
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Description: POWER MODULE H-BRIDGE 15V 10A
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
| IXFA14N85XHV |
|
Виробник: IXYS
Description: MOSFET N-CH 850V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
Description: MOSFET N-CH 850V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 298.96 грн |
| IXTY8N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.41 грн |
| 10+ | 196.7 грн |
| 100+ | 159.11 грн |
| 500+ | 132.73 грн |
| 1000+ | 113.65 грн |
| IXTU8N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET N-CH 700V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.45 грн |
| 10+ | 245.86 грн |
| IXTP8N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET N-CH 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 312.85 грн |
| 10+ | 253.21 грн |
| SLMD960H09L |
|
Виробник: IXYS
Description: MONOCRYST SOLAR CELL 162MW 5.67V
Description: MONOCRYST SOLAR CELL 162MW 5.67V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)| IXYT25N250CHV |
|
Виробник: IXYS
Description: IGBT 2500V 95A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
Description: IGBT 2500V 95A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2517.28 грн |
| 30+ | 2009.26 грн |
| 120+ | 1883.68 грн |
| IXFH12N50F |
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
товар відсутній
| IXFH21N50F |
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товар відсутній
| IXFH6N100F |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
| IXFN55N50F | |
Виробник: IXYS
Description: MOSFET N-CH 500V 55A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Description: MOSFET N-CH 500V 55A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
товар відсутній
| IXFT12N100F |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 1000V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
товар відсутній
| IXYN50N170CV1 |
|
Виробник: IXYS
Description: IGBT 1700V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 22ns/236ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 485 A
Power - Max: 880 W
Description: IGBT 1700V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 22ns/236ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 485 A
Power - Max: 880 W
на замовлення 126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3304.74 грн |
| 10+ | 2835.45 грн |
| 100+ | 2488.81 грн |
| IXYH16N170C |
|
Виробник: IXYS
Description: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
Description: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 749.31 грн |
| 10+ | 635.73 грн |
| 100+ | 549.79 грн |
| 500+ | 467.58 грн |
| 1000+ | 428.89 грн |
| IXYH16N170CV1 |
|
Виробник: IXYS
Description: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
Description: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1067.5 грн |
| 10+ | 905.33 грн |
| IXYL40N250CV1 |
|
Виробник: IXYS
Description: IGBT 2500V 70A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 577 W
Description: IGBT 2500V 70A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 577 W
на замовлення 725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6052.46 грн |
| 10+ | 5320.93 грн |
| 100+ | 4813.27 грн |
| IXYX40N250CHV |
|
Виробник: IXYS
Description: IGBT 2.5KV 70A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
Description: IGBT 2.5KV 70A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2775.95 грн |
| 30+ | 2239.74 грн |
| 120+ | 2090.41 грн |
| IXFP60N25X3M |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 582.97 грн |
| 10+ | 481.06 грн |
| 100+ | 400.89 грн |
| 500+ | 331.96 грн |
| IXFA60N25X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 60A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Description: MOSFET N-CH 250V 60A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 590.6 грн |
| 10+ | 487.45 грн |
| IXFA80N25X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Description: MOSFET N-CH 250V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 659.27 грн |
| 10+ | 544.62 грн |
| 100+ | 453.83 грн |
| IXFT170N25X3HV |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 170A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Description: MOSFET N-CH 250V 170A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
товар відсутній
| IXFN170N25X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Description: MOSFET N-CH 250V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 578 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2489.81 грн |
| 10+ | 2130.43 грн |
| 100+ | 1863.34 грн |
| IXYH12N250C |
|
Виробник: IXYS
Description: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
| IXYH12N250CV1HV |
|
Виробник: IXYS
Description: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
| IXYH16N250C |
|
Виробник: IXYS
Description: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
Description: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товар відсутній
| IXYH16N250CV1HV |
|
Виробник: IXYS
Description: IGBT 2500V 35A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
Description: IGBT 2500V 35A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товар відсутній
| IXFC24N50Q |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
| IXFD24N50Q-72 |
товар відсутній
| IXFD26N50Q-72 |
Виробник: IXYS
Description: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Description: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
товар відсутній
| IXFD26N60Q-8XQ |
товар відсутній
| IXFD40N30Q-72 |
Виробник: IXYS
Description: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Description: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
товар відсутній
| IXFJ32N50 |
товар відсутній
| IXFJ40N30Q |
|
Виробник: IXYS
Description: MOSFET N-CHANNEL 300V 40A TO268
Packaging: Tube
Package / Case: 3-SIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET N-CHANNEL 300V 40A TO268
Packaging: Tube
Package / Case: 3-SIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
| IXFR21N50Q |
товар відсутній
| IXFR32N50 |
товар відсутній
| IXTH21N50Q |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
| IXFT26N50Q TR |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
товар відсутній
| IXFT40N30Q TR |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
Description: MOSFET N-CH 300V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
товар відсутній
| DCG100X1200NA |
|
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 49A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 49A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11150.35 грн |
| DCG130X1200NA |
|
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17411.13 грн |
| IXTP140N12T2 |
|
Виробник: IXYS
Description: MOSFET N-CH 120V 140A TO220AB
Description: MOSFET N-CH 120V 140A TO220AB
на замовлення 1309 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 501.32 грн |
| 10+ | 433.74 грн |
| 100+ | 355.36 грн |
| 500+ | 283.89 грн |
| 1000+ | 239.42 грн |
| IXFQ120N25X3 |
|
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 120A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
Description: MOSFET N-CHANNEL 250V 120A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 890.47 грн |
| 10+ | 788.05 грн |
| 100+ | 665.55 грн |
| 500+ | 555.62 грн |
| IXFT120N25X3HV |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
Description: MOSFET N-CH 250V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
товар відсутній
| IXFT150N25X3HV |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 150A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Description: MOSFET N-CH 250V 150A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
| DSA15IM150UC-TRL |
|
Виробник: IXYS
Description: DIODE SCHOTTKY 150V 15A TO252
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Description: DIODE SCHOTTKY 150V 15A TO252
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
товар відсутній
| IXFY36N20X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Description: MOSFET N-CH 200V 36A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
товар відсутній
| IXFA36N20X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Description: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
на замовлення 1696 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.82 грн |
| 10+ | 306.92 грн |
| 100+ | 251.44 грн |
| 500+ | 200.87 грн |
| 1000+ | 169.41 грн |
| IXFQ72N20X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Description: MOSFET N-CH 200V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 732.52 грн |
| 10+ | 637.2 грн |
| IXFA72N20X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Description: MOSFET N-CH 200V 72A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 632.56 грн |
| 10+ | 549.84 грн |
| 100+ | 455.21 грн |
| IXFH72N30X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Description: MOSFET N-CH 300V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 837.82 грн |
| 10+ | 691.36 грн |
| IXFT100N30X3HV |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товар відсутній
| IXFT150N30X3HV |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 150A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET N-CH 300V 150A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
товар відсутній
| IXFH150N30X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET N-CH 300V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1375.77 грн |
| 30+ | 1098.7 грн |
| 120+ | 1030.02 грн |
| CS19-12HO1S-TUB |
|
Виробник: IXYS
Description: SCR 1200V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.2 kV
Description: SCR 1200V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 231.97 грн |
| 50+ | 176.98 грн |
| DSP8-12AS-TUB |
|
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 8A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 8A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній