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IXTH2N150L IXTH2N150L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixth2n150l_datasheet.pdf.pdf Description: MOSFET N-CH 1500V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 8.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 1386 шт:
термін постачання 21-31 дні (днів)
1+1034.91 грн
10+ 915.8 грн
100+ 773.5 грн
500+ 645.74 грн
1000+ 592.3 грн
IXTH3N200P3HV IXTH3N200P3HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n200p3hv_datasheet.pdf.pdf Description: MOSFET N-CH 2000V 3A TO247
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
IXXH150N60C3 IXXH150N60C3 IXYS littelfuse_discrete_igbts_xpt_ixxh150n60c3_datasheet.pdf.pdf Description: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+962.54 грн
IXXH30N60B3 IXXH30N60B3 IXYS littelfuse_discrete_igbts_xpt_ixxh30n60b3_datasheet.pdf.pdf Description: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
товар відсутній
IXXH40N65B4H1 IXXH40N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxh40n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товар відсутній
IXXH75N60C3D1 IXXH75N60C3D1 IXYS littelfuse_discrete_igbts_xpt_ixxh75n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 150A 750W TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+516.68 грн
IXYF30N450 IXYF30N450 IXYS media?resourcetype=datasheets&itemid=4f39dc18-3fb1-4634-aa0a-11afa7e8bce7&filename=littelfuse-discrete-igbts-xpt-ixyf30n450-datasheet Description: IGBT 4500V 23A 230W ISOPLUS
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 230 W
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
1+9857.29 грн
10+ 9076.04 грн
IXYN100N120B3H1 IXYN100N120B3H1 IXYS littelfuse_discrete_igbts_xpt_ixyn100n120b3h1_datasheet.pdf.pdf Description: IGBT MOD 1200V 165A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2903.18 грн
10+ 2608.71 грн
IXYN100N65A3 IXYN100N65A3 IXYS littelfuse_discrete_igbts_xpt_ixyn100n65a3_datasheet.pdf.pdf Description: IGBT MOD 650V 170A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 25 µA
товар відсутній
IXYN120N120C3 IXYN120N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyn120n120c3_datasheet.pdf.pdf Description: IGBT MOD 1200V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B - miniBLOC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 25 µA
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
1+2811.37 грн
10+ 2412.24 грн
100+ 2117.35 грн
IXYP15N65C3D1 IXYP15N65C3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_15n65c3d1_datasheet.pdf.pdf Description: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP20N65C3D1 IXYP20N65C3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_20n65c3d1_datasheet.pdf.pdf Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
2+256 грн
50+ 195.16 грн
100+ 167.29 грн
500+ 139.55 грн
Мінімальне замовлення: 2
IXYX100N120B3 IXYX100N120B3 IXYS littelfuse_discrete_igbts_xpt_ixy_100n120b3_datasheet.pdf.pdf Description: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
1+1772.57 грн
10+ 1516.82 грн
100+ 1326.64 грн
500+ 1062.4 грн
IXYX100N65B3D1 IXYX100N65B3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf Description: IGBT PT 650V 225A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 1.37mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товар відсутній
MCNA120P2200TA MCNA120P2200TA IXYS media?resourcetype=datasheets&itemid=17E2C36A-E8EE-4365-9325-B305242F604D&filename=Littelfuse-Power-Semiconductors-MCNA120P2200TA-Datasheet Description: MOD THYRISTOR TRI 22KV TO-240
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
товар відсутній
MMIX4B20N300 MMIX4B20N300 IXYS littelfuse_discrete_igbts_smpd_packages_mmix4b20n300_datasheet.pdf.pdf Description: IGBT F BRIDGE 3000V 34A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+7618.62 грн
MMIX4G20N250 IXYS littelfuse_discrete_igbts_smpd_packages_mmix4g20n250_datasheet.pdf.pdf Description: IGBT F BRIDGE 2500V 23A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 1.19 nF @ 15 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+8065.27 грн
VMM90-09P IXYS Description: MOSFET 2N-CH 900V 85A Y3-LI
товар відсутній
IXYH30N450HV IXYH30N450HV IXYS littelfuse_discrete_igbts_xpt_ixy_30n450hv_datasheet.pdf.pdf Description: IGBT 4500V 30A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-247HV
IGBT Type: PT
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 969 шт:
термін постачання 21-31 дні (днів)
1+4116.28 грн
10+ 3018.13 грн
100+ 2895.47 грн
IXTP270N04T4 IXTP270N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
2+303.47 грн
50+ 231.58 грн
100+ 198.48 грн
Мінімальне замовлення: 2
IXTH270N04T4 IXTH270N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
товар відсутній
IXTA270N04T4 IXTA270N04T4 IXYS DS100705A(IXTA270N04T4-7).pdf Description: MOSFET N-CH 40V 270A
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
IXTA340N04T4 IXTA340N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta340n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 340A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
1+416.3 грн
50+ 317.75 грн
100+ 272.37 грн
IXTA340N04T4-7 IXTA340N04T4-7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta340n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 340A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
товар відсутній
IXTH340N04T4 IXTH340N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_340n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 340A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
товар відсутній
IXTP340N04T4 IXTP340N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_340n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 340A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+399.18 грн
50+ 304.5 грн
100+ 261.01 грн
IXFA20N85XHV IXFA20N85XHV IXYS DS100897A(IXFA20N85XHV)_.pdf Description: MOSFET N-CH 850V 20A TO263
товар відсутній
IXFT50N85XHV IXFT50N85XHV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
на замовлення 1259 шт:
термін постачання 21-31 дні (днів)
1+1332.15 грн
30+ 1038.26 грн
120+ 977.18 грн
510+ 831.07 грн
IXFP7N60P3 IXFP7N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 500mA, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
товар відсутній
IXTT440N04T4HV IXTT440N04T4HV IXYS media?resourcetype=datasheets&itemid=0F61C3AB-47F3-4A3C-88DD-1B1C934123C7&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTT440N04T4HV-Datasheet.PDF Description: MOSFET N-CH 40V 440A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+841.93 грн
30+ 646.83 грн
IXTN660N04T4 IXTN660N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn660n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 660A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
1+2174.08 грн
10+ 1860.45 грн
100+ 1627.24 грн
IXFB90N85X IXFB90N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfb90n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 90A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 500mA, 10V
Power Dissipation (Max): 1785W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+3157.63 грн
10+ 2836.65 грн
MMIX1T132N50P3 MMIX1T132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A POLAR3
Packaging: Tube
Package / Case: 24-PowerSMD, 22 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: Polar3™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
товар відсутній
IXTF1R4N450 IXTF1R4N450 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtf1r4n450_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 1.4A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товар відсутній
IXTH04N300P3HV IXTH04N300P3HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth04n300p3hv_datasheet.pdf.pdf Description: MOSFET N-CH 3000V 400MA TO247HV
товар відсутній
IXTT1N300P3HV IXTT1N300P3HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n300p3hv_datasheet.pdf.pdf Description: MOSFET N-CH 3000V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V
товар відсутній
IXTX1R4N450HV IXTX1R4N450HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtx1r4n450hv_datasheet.pdf.pdf Description: MOSFET N-CH 4500V 1.4A TO247PLUS
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+4915.42 грн
IXFN94N50P2 IXFN94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn94n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 68A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
1+2430.08 грн
10+ 2158.15 грн
100+ 1842.89 грн
IXFQ24N50P2 IXFQ24N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfq24n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
товар відсутній
IXFH40N85X IXFH40N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_40n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
1+1000.67 грн
30+ 780.2 грн
IXTA3N120HV IXTA3N120HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta3n120hv_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
1+559.47 грн
50+ 430.49 грн
100+ 385.18 грн
IXXX200N60C3 IXXX200N60C3 IXYS littelfuse_discrete_igbts_xpt_ixx_200n60c3_datasheet.pdf.pdf Description: IGBT 600V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
1+1865.94 грн
10+ 1657.39 грн
IXYN30N170CV1 IXYN30N170CV1 IXYS littelfuse_discrete_igbts_xpt_ixyn30n170cv1_datasheet.pdf.pdf Description: 1700V/85A HIGH VOLTAGE XPT IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 680 W
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
1+2685.31 грн
10+ 1922.87 грн
100+ 1718.37 грн
IXYX30N170CV1 IXYX30N170CV1 IXYS littelfuse_discrete_igbts_xpt_ixy_30n170cv1_datasheet.pdf.pdf Description: IGBT 1700V 108A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+1751.56 грн
30+ 1398.38 грн
IXFP220N06T3 IXFP220N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
товар відсутній
IXFP270N06T3 IXFP270N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
товар відсутній
IXFA270N06T3 IXFA270N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 270A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+285.48 грн
Мінімальне замовлення: 300
IXFH270N06T3 IXFH270N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
1+613.16 грн
10+ 402.98 грн
100+ 296.7 грн
500+ 240.81 грн
IXIDM1401_1505_O IXIDM1401_1505_O IXYS IXIDM1401_O_12Sep2017_DS.pdf Description: POWER MODULE H-BRIDGE 15V 10A
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
IXFA14N85XHV IXFA14N85XHV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_14n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
300+304.87 грн
Мінімальне замовлення: 300
IXTY8N70X2 IXTY8N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
2+248.22 грн
10+ 200.59 грн
100+ 162.25 грн
500+ 135.35 грн
1000+ 115.9 грн
Мінімальне замовлення: 2
IXTU8N70X2 IXTU8N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf Description: MOSFET N-CH 700V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
2+310.47 грн
10+ 250.72 грн
Мінімальне замовлення: 2
IXTP8N70X2 IXTP8N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf Description: MOSFET N-CH 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+319.03 грн
10+ 258.21 грн
SLMD960H09L SLMD960H09L IXYS SLMD960H09L_Nov16.pdf Description: MONOCRYST SOLAR CELL 162MW 5.67V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
IXYT25N250CHV IXYT25N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_25n250chv_datasheet.pdf.pdf Description: IGBT 2500V 95A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
1+2497 грн
30+ 1993.48 грн
120+ 1868.9 грн
IXFH12N50F IXFH12N50F IXYS Description: MOSFET N-CH 500V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
товар відсутній
IXFH21N50F IXFH21N50F IXYS Description: MOSFET N-CH 500V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товар відсутній
IXFH6N100F IXFH6N100F IXYS DS98732A(IXFH-FT6N100F).pdf Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
IXFK24N100F IXFK24N100F IXYS DS98874B(IXFK-FX24N100F).pdf Description: MOSFET N-CH 1000V 24A TO264
товар відсутній
IXFK55N50F IXFK55N50F IXYS DS98855A(IXFK-FX55N50F).pdf Description: MOSFET N-CH 500V 55A TO264
товар відсутній
IXTH2N150L littelfuse_discrete_mosfets_n-channel_linear_ixth2n150l_datasheet.pdf.pdf
IXTH2N150L
Виробник: IXYS
Description: MOSFET N-CH 1500V 2A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 8.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 1386 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1034.91 грн
10+ 915.8 грн
100+ 773.5 грн
500+ 645.74 грн
1000+ 592.3 грн
IXTH3N200P3HV littelfuse_discrete_mosfets_n-channel_standard_ixt_3n200p3hv_datasheet.pdf.pdf
IXTH3N200P3HV
Виробник: IXYS
Description: MOSFET N-CH 2000V 3A TO247
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
IXXH150N60C3 littelfuse_discrete_igbts_xpt_ixxh150n60c3_datasheet.pdf.pdf
IXXH150N60C3
Виробник: IXYS
Description: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+962.54 грн
IXXH30N60B3 littelfuse_discrete_igbts_xpt_ixxh30n60b3_datasheet.pdf.pdf
IXXH30N60B3
Виробник: IXYS
Description: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
товар відсутній
IXXH40N65B4H1 littelfuse_discrete_igbts_xpt_ixxh40n65b4h1_datasheet.pdf.pdf
IXXH40N65B4H1
Виробник: IXYS
Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товар відсутній
IXXH75N60C3D1 littelfuse_discrete_igbts_xpt_ixxh75n60c3d1_datasheet.pdf.pdf
IXXH75N60C3D1
Виробник: IXYS
Description: IGBT 600V 150A 750W TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+516.68 грн
IXYF30N450 media?resourcetype=datasheets&itemid=4f39dc18-3fb1-4634-aa0a-11afa7e8bce7&filename=littelfuse-discrete-igbts-xpt-ixyf30n450-datasheet
IXYF30N450
Виробник: IXYS
Description: IGBT 4500V 23A 230W ISOPLUS
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 230 W
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+9857.29 грн
10+ 9076.04 грн
IXYN100N120B3H1 littelfuse_discrete_igbts_xpt_ixyn100n120b3h1_datasheet.pdf.pdf
IXYN100N120B3H1
Виробник: IXYS
Description: IGBT MOD 1200V 165A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2903.18 грн
10+ 2608.71 грн
IXYN100N65A3 littelfuse_discrete_igbts_xpt_ixyn100n65a3_datasheet.pdf.pdf
IXYN100N65A3
Виробник: IXYS
Description: IGBT MOD 650V 170A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 25 µA
товар відсутній
IXYN120N120C3 littelfuse_discrete_igbts_xpt_ixyn120n120c3_datasheet.pdf.pdf
IXYN120N120C3
Виробник: IXYS
Description: IGBT MOD 1200V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B - miniBLOC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 25 µA
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2811.37 грн
10+ 2412.24 грн
100+ 2117.35 грн
IXYP15N65C3D1 littelfuse_discrete_igbts_xpt_ixy_15n65c3d1_datasheet.pdf.pdf
IXYP15N65C3D1
Виробник: IXYS
Description: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP20N65C3D1 littelfuse_discrete_igbts_xpt_ixy_20n65c3d1_datasheet.pdf.pdf
IXYP20N65C3D1
Виробник: IXYS
Description: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+256 грн
50+ 195.16 грн
100+ 167.29 грн
500+ 139.55 грн
Мінімальне замовлення: 2
IXYX100N120B3 littelfuse_discrete_igbts_xpt_ixy_100n120b3_datasheet.pdf.pdf
IXYX100N120B3
Виробник: IXYS
Description: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1772.57 грн
10+ 1516.82 грн
100+ 1326.64 грн
500+ 1062.4 грн
IXYX100N65B3D1 littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf
IXYX100N65B3D1
Виробник: IXYS
Description: IGBT PT 650V 225A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 1.37mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товар відсутній
MCNA120P2200TA media?resourcetype=datasheets&itemid=17E2C36A-E8EE-4365-9325-B305242F604D&filename=Littelfuse-Power-Semiconductors-MCNA120P2200TA-Datasheet
MCNA120P2200TA
Виробник: IXYS
Description: MOD THYRISTOR TRI 22KV TO-240
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
товар відсутній
MMIX4B20N300 littelfuse_discrete_igbts_smpd_packages_mmix4b20n300_datasheet.pdf.pdf
MMIX4B20N300
Виробник: IXYS
Description: IGBT F BRIDGE 3000V 34A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7618.62 грн
MMIX4G20N250 littelfuse_discrete_igbts_smpd_packages_mmix4g20n250_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT F BRIDGE 2500V 23A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 1.19 nF @ 15 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8065.27 грн
VMM90-09P
Виробник: IXYS
Description: MOSFET 2N-CH 900V 85A Y3-LI
товар відсутній
IXYH30N450HV littelfuse_discrete_igbts_xpt_ixy_30n450hv_datasheet.pdf.pdf
IXYH30N450HV
Виробник: IXYS
Description: IGBT 4500V 30A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-247HV
IGBT Type: PT
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 969 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4116.28 грн
10+ 3018.13 грн
100+ 2895.47 грн
IXTP270N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf
IXTP270N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+303.47 грн
50+ 231.58 грн
100+ 198.48 грн
Мінімальне замовлення: 2
IXTH270N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf
IXTH270N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
товар відсутній
IXTA270N04T4 DS100705A(IXTA270N04T4-7).pdf
IXTA270N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 270A
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
IXTA340N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta340n04t4_datasheet.pdf.pdf
IXTA340N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 340A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+416.3 грн
50+ 317.75 грн
100+ 272.37 грн
IXTA340N04T4-7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta340n04t4_datasheet.pdf.pdf
IXTA340N04T4-7
Виробник: IXYS
Description: MOSFET N-CH 40V 340A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
товар відсутній
IXTH340N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_340n04t4_datasheet.pdf.pdf
IXTH340N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 340A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
товар відсутній
IXTP340N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_340n04t4_datasheet.pdf.pdf
IXTP340N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 340A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+399.18 грн
50+ 304.5 грн
100+ 261.01 грн
IXFA20N85XHV DS100897A(IXFA20N85XHV)_.pdf
IXFA20N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 20A TO263
товар відсутній
IXFT50N85XHV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n85x_datasheet.pdf.pdf
IXFT50N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
на замовлення 1259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1332.15 грн
30+ 1038.26 грн
120+ 977.18 грн
510+ 831.07 грн
IXFP7N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf
IXFP7N60P3
Виробник: IXYS
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 500mA, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
товар відсутній
IXTT440N04T4HV media?resourcetype=datasheets&itemid=0F61C3AB-47F3-4A3C-88DD-1B1C934123C7&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTT440N04T4HV-Datasheet.PDF
IXTT440N04T4HV
Виробник: IXYS
Description: MOSFET N-CH 40V 440A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+841.93 грн
30+ 646.83 грн
IXTN660N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn660n04t4_datasheet.pdf.pdf
IXTN660N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 660A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2174.08 грн
10+ 1860.45 грн
100+ 1627.24 грн
IXFB90N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfb90n85x_datasheet.pdf.pdf
IXFB90N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 90A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 500mA, 10V
Power Dissipation (Max): 1785W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3157.63 грн
10+ 2836.65 грн
MMIX1T132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1t132n50p3_datasheet.pdf.pdf
MMIX1T132N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 63A POLAR3
Packaging: Tube
Package / Case: 24-PowerSMD, 22 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: Polar3™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
товар відсутній
IXTF1R4N450 littelfuse_discrete_mosfets_n-channel_standard_ixtf1r4n450_datasheet.pdf.pdf
IXTF1R4N450
Виробник: IXYS
Description: MOSFET N-CH 4500V 1.4A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товар відсутній
IXTH04N300P3HV littelfuse_discrete_mosfets_n-channel_standard_ixth04n300p3hv_datasheet.pdf.pdf
IXTH04N300P3HV
Виробник: IXYS
Description: MOSFET N-CH 3000V 400MA TO247HV
товар відсутній
IXTT1N300P3HV littelfuse_discrete_mosfets_n-channel_standard_ixt_1n300p3hv_datasheet.pdf.pdf
IXTT1N300P3HV
Виробник: IXYS
Description: MOSFET N-CH 3000V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V
товар відсутній
IXTX1R4N450HV littelfuse_discrete_mosfets_n-channel_standard_ixtx1r4n450hv_datasheet.pdf.pdf
IXTX1R4N450HV
Виробник: IXYS
Description: MOSFET N-CH 4500V 1.4A TO247PLUS
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4915.42 грн
IXFN94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn94n50p2_datasheet.pdf.pdf
IXFN94N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 68A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2430.08 грн
10+ 2158.15 грн
100+ 1842.89 грн
IXFQ24N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfq24n50p2_datasheet.pdf.pdf
IXFQ24N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
товар відсутній
IXFH40N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_40n85x_datasheet.pdf.pdf
IXFH40N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1000.67 грн
30+ 780.2 грн
IXTA3N120HV littelfuse_discrete_mosfets_n-channel_standard_ixta3n120hv_datasheet.pdf.pdf
IXTA3N120HV
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+559.47 грн
50+ 430.49 грн
100+ 385.18 грн
IXXX200N60C3 littelfuse_discrete_igbts_xpt_ixx_200n60c3_datasheet.pdf.pdf
IXXX200N60C3
Виробник: IXYS
Description: IGBT 600V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1865.94 грн
10+ 1657.39 грн
IXYN30N170CV1 littelfuse_discrete_igbts_xpt_ixyn30n170cv1_datasheet.pdf.pdf
IXYN30N170CV1
Виробник: IXYS
Description: 1700V/85A HIGH VOLTAGE XPT IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 680 W
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2685.31 грн
10+ 1922.87 грн
100+ 1718.37 грн
IXYX30N170CV1 littelfuse_discrete_igbts_xpt_ixy_30n170cv1_datasheet.pdf.pdf
IXYX30N170CV1
Виробник: IXYS
Description: IGBT 1700V 108A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1751.56 грн
30+ 1398.38 грн
IXFP220N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf
IXFP220N06T3
Виробник: IXYS
Description: MOSFET N-CH 60V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
товар відсутній
IXFP270N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf
IXFP270N06T3
Виробник: IXYS
Description: MOSFET N-CH 60V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
товар відсутній
IXFA270N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf
IXFA270N06T3
Виробник: IXYS
Description: MOSFET N-CH 60V 270A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+285.48 грн
Мінімальне замовлення: 300
IXFH270N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf
IXFH270N06T3
Виробник: IXYS
Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+613.16 грн
10+ 402.98 грн
100+ 296.7 грн
500+ 240.81 грн
IXIDM1401_1505_O IXIDM1401_O_12Sep2017_DS.pdf
IXIDM1401_1505_O
Виробник: IXYS
Description: POWER MODULE H-BRIDGE 15V 10A
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
IXFA14N85XHV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_14n85x_datasheet.pdf.pdf
IXFA14N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+304.87 грн
Мінімальне замовлення: 300
IXTY8N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf
IXTY8N70X2
Виробник: IXYS
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+248.22 грн
10+ 200.59 грн
100+ 162.25 грн
500+ 135.35 грн
1000+ 115.9 грн
Мінімальне замовлення: 2
IXTU8N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf
IXTU8N70X2
Виробник: IXYS
Description: MOSFET N-CH 700V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+310.47 грн
10+ 250.72 грн
Мінімальне замовлення: 2
IXTP8N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf
IXTP8N70X2
Виробник: IXYS
Description: MOSFET N-CH 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+319.03 грн
10+ 258.21 грн
SLMD960H09L SLMD960H09L_Nov16.pdf
SLMD960H09L
Виробник: IXYS
Description: MONOCRYST SOLAR CELL 162MW 5.67V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
IXYT25N250CHV littelfuse_discrete_igbts_xpt_ixy_25n250chv_datasheet.pdf.pdf
IXYT25N250CHV
Виробник: IXYS
Description: IGBT 2500V 95A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2497 грн
30+ 1993.48 грн
120+ 1868.9 грн
IXFH12N50F
IXFH12N50F
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
товар відсутній
IXFH21N50F
IXFH21N50F
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товар відсутній
IXFH6N100F DS98732A(IXFH-FT6N100F).pdf
IXFH6N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
IXFK24N100F DS98874B(IXFK-FX24N100F).pdf
IXFK24N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 24A TO264
товар відсутній
IXFK55N50F DS98855A(IXFK-FX55N50F).pdf
IXFK55N50F
Виробник: IXYS
Description: MOSFET N-CH 500V 55A TO264
товар відсутній
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