Продукція > IXYS > Всі товари виробника IXYS (19989) > Сторінка 83 з 334

Обрати Сторінку:   [  << Попередня Сторінка ]  1 33 66 78 79 80 81 82 83 84 85 86 87 88 99 132 165 198 231 264 297 330 334  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
W6262ZC200 IXYS media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf Description: DIODE GEN PURP 2KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
товар відсутній
P0848YC04C IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
товар відсутній
K4005EA480 IXYS media?resourcetype=datasheets&amp;itemid=795c785d-f0bc-46a5-92cf-f8e2f0ae9927&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k4005ea480-520_datasheet.pdf Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
товар відсутній
N3597ML040 IXYS media?resourcetype=datasheets&amp;itemid=c9853d53-1646-4292-a3e7-bcf7cec017d2&amp;filename=littelfuse_discrete_thyristors_phase_control_n3597ml0_0_datasheet.pdf Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
товар відсутній
W6262ZC240 IXYS media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf Description: DIODE GEN PURP 2.4KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
товар відсутній
N1581QL160 IXYS media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf Description: SCR 1.6KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.6 kV
товар відсутній
N1581QL180 IXYS media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf Description: SCR 1.8KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.8 kV
товар відсутній
W1411LC360 IXYS media?resourcetype=datasheets&itemid=63c16840-7f43-4a72-afb5-fbbda70431dd&filename=littelfuse_discrete_diodes_rectifier_w1411lc3_0_datasheet.pdf Description: DIODE GEN PURP 3.6KV 1411A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1411A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
товар відсутній
N5415EA320 IXYS Description: PHASE CONTROL THYRISTOR
товар відсутній
P0848YC04B IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
товар відсутній
DSEI12-06AS-TUB DSEI12-06AS-TUB IXYS media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
2+209.08 грн
50+ 159.52 грн
Мінімальне замовлення: 2
ZY180R480 ZY180R480 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SER KEY PLUG W/WIRE 480MM RED
Packaging: Bulk
Part Status: Active
товар відсутній
DSEI120-12AZ-TUB IXYS media?resourcetype=datasheets&itemid=a5bf7040-7812-4c27-a0c7-8610a2274c6c&filename=Littelfuse-Power-Semiconductors-DSEI120-12AZ-Datasheet Description: DIODE GP 1.2KV 109A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+965.58 грн
30+ 752.42 грн
IXBH42N250 IXBH42N250 IXYS media?resourcetype=datasheets&amp;itemid=deeed825-f7c5-420f-8a6b-2589ebdb9560&amp;filename=littelfuse_discrete_igbts_bimosfet_ixbh42n250_datasheet.pdf Description: BIMOSFET TRANS 2500V 42A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+2636.73 грн
10+ 2262.39 грн
100+ 1985.78 грн
ZY180L480 ZY180L480 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SERIES KEY PLUG W/WIRE 480MM
Packaging: Bulk
Part Status: Active
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
2+295.76 грн
10+ 239.41 грн
100+ 193.7 грн
Мінімальне замовлення: 2
DSEP12-12BZ-TUB DSEP12-12BZ-TUB IXYS media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS media?resourcetype=datasheets&itemid=012c4d94-42d0-46bd-b403-cba1fb09e8b0&filename=Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+228.09 грн
Мінімальне замовлення: 2
DSEI12-12AZ-TUB DSEI12-12AZ-TUB IXYS media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
IXFA80N25X3TRL IXFA80N25X3TRL IXYS Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
IXTY1R6N50D2-TRL IXTY1R6N50D2-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 1.6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
DSEP40-03AS-TUB DSEP40-03AS-TUB IXYS media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
IXYH30N65B3D1 IXYS Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
товар відсутній
DCG20B650LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
IXG50I4500KN IXYS Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
товар відсутній
CLA100E1200KB IXYS media?resourcetype=datasheets&itemid=a0930cdd-14b8-43a1-a3f0-53bfd2ca5b7c&filename=Littelfuse-Power-Semiconductors-CLA100E1200KB-Datasheet Description: SCR 1.2KV 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
товар відсутній
IXYH30N120C4 IXYS media?resourcetype=datasheets&itemid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932&filename=littelfuse_discrete_igbts_xpt_ixyh30n120c4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYA20N120A4HV IXYA20N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixy_20n120a4_datasheet.pdf.pdf Description: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
300+238.01 грн
Мінімальне замовлення: 300
IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товар відсутній
DSP25-16AT-TRL IXYS L015.pdf Description: DIODE ARRAY GP 1600V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
CME30E1600PZ-TUB CME30E1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf Description: SCR 1.6KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
товар відсутній
CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Description: TRIAC 1.6KV 88A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
товар відсутній
IXTA20N65X-TRL IXTA20N65X-TRL IXYS Description: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
товар відсутній
IXGP48N60B3 IXGP48N60B3 IXYS media?resourcetype=datasheets&itemid=c729dd1f-0072-44a5-be34-749c6234f065&filename=littelfuse_discrete_igbts_pt_ixg_48n60b3_datasheet.pdf Description: DISC IGBT PT-MID FREQUENCY TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXXH75N60B3 IXYS media?resourcetype=datasheets&itemid=65b0869f-7d80-4345-86e6-e47e8d0b05bf&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
товар відсутній
IXTA3N100D2HV-TRL IXTA3N100D2HV-TRL IXYS Description: MOSFET N-CH 1000V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXGT64N60B3 IXYS media?resourcetype=datasheets&itemid=2327aeab-d06f-45ab-8c72-805732caec63&filename=littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf Description: IGBT PT 600V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
MITA300RF1700PTED IXYS media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf Description: IGBT MODULE - OTHERS E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1390 W
Current - Collector Cutoff (Max): 1.2 mA
товар відсутній
IXFA34N65X2-TRL IXFA34N65X2-TRL IXYS Description: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
товар відсутній
DSSK18-0025BS-TUB DSSK18-0025BS-TUB IXYS Description: POWER DIODE DISCRETES-SCHOTTKY T
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 mA @ 25 V
товар відсутній
IXGP48N60A3 IXGP48N60A3 IXYS media?resourcetype=datasheets&itemid=ffcf00ed-e88e-4ffe-ba28-de9ec4168ec3&filename=littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf Description: IGBT PT 600V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+318.57 грн
IXGT64N60B3-TRL IXYS Description: IGBT PT 600V 64A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXTA120P065T-TRL IXTA120P065T-TRL IXYS Description: MOSFET P-CH 65V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
товар відсутній
IXYP20N65B3D1 IXYP20N65B3D1 IXYS Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
CLA40E1200HR CLA40E1200HR IXYS CLA40E1200HR.pdf Description: SCR 1.2KV 63A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.25 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+845.46 грн
10+ 735.29 грн
MIXG240RF1200PTED IXYS Description: IGBT MODULE - BRAKE E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: PT
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
товар відсутній
CLA40E1200NPZ-TRL CLA40E1200NPZ-TRL IXYS Description: POWER THYRISTOR DISCRETES-SCR TO
товар відсутній
DCG20B650LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
IXYA50N65C3-TRL IXYA50N65C3-TRL IXYS Description: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
DSEI12-06AS-TRL DSEI12-06AS-TRL IXYS media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
IXGA20N120A3-TRL IXGA20N120A3-TRL IXYS Description: IXGA20N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
CLA100E1200HB IXYS media?resourcetype=datasheets&itemid=b7e0eaa6-3220-4f0d-8e86-1f7cf4d2a417&filename=Littelfuse-Power-Semiconductors-CLA100E1200HB-Datasheet Description: SCR 1.2KV 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
1+531.45 грн
30+ 408.68 грн
120+ 365.66 грн
MCMA140PD1600T-NMI IXYS Description: SCR MODULE
Packaging: Box
Part Status: Discontinued at Digi-Key
товар відсутній
MMIX1T660N04T4 IXYS media?resourcetype=datasheets&itemid=30f1d503-ac26-4011-9abc-ad3d4c6bca0f&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1t660n04t4_datasheet.pdf Description: MOSFET N-CH 40V 660A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
товар відсутній
DSEP12-12BZ-TRL DSEP12-12BZ-TRL IXYS media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
ZY200R460 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: ZY200R460
Packaging: Bulk
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+175.41 грн
Мінімальне замовлення: 250
MCC162-16IO1B MCC162-16IO1B IXYS media?resourcetype=datasheets&amp;itemid=39564359-d67a-4cc3-b2ec-a1b9c4f6f8d0&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc162-14io1b_mcc162-16io1b_mcc162-18io1b_mcd162-16io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYH30N120A4 IXYS media?resourcetype=datasheets&itemid=9fce9f90-2af9-4a75-bf7f-be975fe328f4&filename=littelfuse_discrete_igbts_xpt_ixy_30n120a4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
300+386.22 грн
Мінімальне замовлення: 300
IXTA3N150HV-TRL IXTA3N150HV-TRL IXYS Description: MOSFET N-CH 1500V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
товар відсутній
DSS6-015AS-TUB IXYS media?resourcetype=datasheets&itemid=5fbcc22e-8dd2-4cad-af93-9833760e86bf&filename=power_semiconductor_discrete_diode_dss6-015as_datasheet.pdf Description: DIODE SCHOTTKY 150V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
товар відсутній
W6262ZC200 media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 2KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
товар відсутній
P0848YC04C media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
товар відсутній
K4005EA480 media?resourcetype=datasheets&amp;itemid=795c785d-f0bc-46a5-92cf-f8e2f0ae9927&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k4005ea480-520_datasheet.pdf
Виробник: IXYS
Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
товар відсутній
N3597ML040 media?resourcetype=datasheets&amp;itemid=c9853d53-1646-4292-a3e7-bcf7cec017d2&amp;filename=littelfuse_discrete_thyristors_phase_control_n3597ml0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
товар відсутній
W6262ZC240 media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 2.4KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
товар відсутній
N1581QL160 media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.6KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.6 kV
товар відсутній
N1581QL180 media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.8 kV
товар відсутній
W1411LC360 media?resourcetype=datasheets&itemid=63c16840-7f43-4a72-afb5-fbbda70431dd&filename=littelfuse_discrete_diodes_rectifier_w1411lc3_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 3.6KV 1411A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1411A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
товар відсутній
N5415EA320
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
товар відсутній
P0848YC04B media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
товар відсутній
DSEI12-06AS-TUB media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf
DSEI12-06AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+209.08 грн
50+ 159.52 грн
Мінімальне замовлення: 2
ZY180R480 littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY180R480
Виробник: IXYS
Description: X SER KEY PLUG W/WIRE 480MM RED
Packaging: Bulk
Part Status: Active
товар відсутній
DSEI120-12AZ-TUB media?resourcetype=datasheets&itemid=a5bf7040-7812-4c27-a0c7-8610a2274c6c&filename=Littelfuse-Power-Semiconductors-DSEI120-12AZ-Datasheet
Виробник: IXYS
Description: DIODE GP 1.2KV 109A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+965.58 грн
30+ 752.42 грн
IXBH42N250 media?resourcetype=datasheets&amp;itemid=deeed825-f7c5-420f-8a6b-2589ebdb9560&amp;filename=littelfuse_discrete_igbts_bimosfet_ixbh42n250_datasheet.pdf
IXBH42N250
Виробник: IXYS
Description: BIMOSFET TRANS 2500V 42A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2636.73 грн
10+ 2262.39 грн
100+ 1985.78 грн
ZY180L480 littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY180L480
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE 480MM
Packaging: Bulk
Part Status: Active
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+295.76 грн
10+ 239.41 грн
100+ 193.7 грн
Мінімальне замовлення: 2
DSEP12-12BZ-TUB media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf
DSEP12-12BZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEP12-12AZ-TUB media?resourcetype=datasheets&itemid=012c4d94-42d0-46bd-b403-cba1fb09e8b0&filename=Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet
DSEP12-12AZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+228.09 грн
Мінімальне замовлення: 2
DSEI12-12AZ-TUB media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf
DSEI12-12AZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
IXFA80N25X3TRL
IXFA80N25X3TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
IXTY1R6N50D2-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf
IXTY1R6N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
DSEP40-03AS-TUB media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf
DSEP40-03AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
IXYH30N65B3D1
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
товар відсутній
DCG20B650LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
IXG50I4500KN
Виробник: IXYS
Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
товар відсутній
CLA100E1200KB media?resourcetype=datasheets&itemid=a0930cdd-14b8-43a1-a3f0-53bfd2ca5b7c&filename=Littelfuse-Power-Semiconductors-CLA100E1200KB-Datasheet
Виробник: IXYS
Description: SCR 1.2KV 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
товар відсутній
IXYH30N120C4 media?resourcetype=datasheets&itemid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932&filename=littelfuse_discrete_igbts_xpt_ixyh30n120c4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
CMA60MT1600NHR CMA60MT1600NHR.pdf
Виробник: IXYS
Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYA20N120A4HV littelfuse_discrete_igbts_xpt_ixy_20n120a4_datasheet.pdf.pdf
IXYA20N120A4HV
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+238.01 грн
Мінімальне замовлення: 300
IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товар відсутній
DSP25-16AT-TRL L015.pdf
Виробник: IXYS
Description: DIODE ARRAY GP 1600V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
CME30E1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf
CME30E1600PZ-TUB
Виробник: IXYS
Description: SCR 1.6KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
товар відсутній
CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
Виробник: IXYS
Description: TRIAC 1.6KV 88A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
товар відсутній
IXTA20N65X-TRL
IXTA20N65X-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
товар відсутній
IXGP48N60B3 media?resourcetype=datasheets&itemid=c729dd1f-0072-44a5-be34-749c6234f065&filename=littelfuse_discrete_igbts_pt_ixg_48n60b3_datasheet.pdf
IXGP48N60B3
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXXH75N60B3 media?resourcetype=datasheets&itemid=65b0869f-7d80-4345-86e6-e47e8d0b05bf&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
товар відсутній
IXTA3N100D2HV-TRL
IXTA3N100D2HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXGT64N60B3 media?resourcetype=datasheets&itemid=2327aeab-d06f-45ab-8c72-805732caec63&filename=littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf
Виробник: IXYS
Description: IGBT PT 600V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
MITA300RF1700PTED media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf
Виробник: IXYS
Description: IGBT MODULE - OTHERS E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1390 W
Current - Collector Cutoff (Max): 1.2 mA
товар відсутній
IXFA34N65X2-TRL
IXFA34N65X2-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
товар відсутній
DSSK18-0025BS-TUB
DSSK18-0025BS-TUB
Виробник: IXYS
Description: POWER DIODE DISCRETES-SCHOTTKY T
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 mA @ 25 V
товар відсутній
IXGP48N60A3 media?resourcetype=datasheets&itemid=ffcf00ed-e88e-4ffe-ba28-de9ec4168ec3&filename=littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf
IXGP48N60A3
Виробник: IXYS
Description: IGBT PT 600V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+318.57 грн
IXGT64N60B3-TRL
Виробник: IXYS
Description: IGBT PT 600V 64A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXTA120P065T-TRL
IXTA120P065T-TRL
Виробник: IXYS
Description: MOSFET P-CH 65V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
товар відсутній
IXYP20N65B3D1
IXYP20N65B3D1
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
CLA40E1200HR CLA40E1200HR.pdf
CLA40E1200HR
Виробник: IXYS
Description: SCR 1.2KV 63A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.25 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+845.46 грн
10+ 735.29 грн
MIXG240RF1200PTED
Виробник: IXYS
Description: IGBT MODULE - BRAKE E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: PT
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
товар відсутній
CLA40E1200NPZ-TRL
CLA40E1200NPZ-TRL
Виробник: IXYS
Description: POWER THYRISTOR DISCRETES-SCR TO
товар відсутній
DCG20B650LB-TUB
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
IXYA50N65C3-TRL
IXYA50N65C3-TRL
Виробник: IXYS
Description: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
DSEI12-06AS-TRL media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf
DSEI12-06AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
IXGA20N120A3-TRL
IXGA20N120A3-TRL
Виробник: IXYS
Description: IXGA20N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
CLA100E1200HB media?resourcetype=datasheets&itemid=b7e0eaa6-3220-4f0d-8e86-1f7cf4d2a417&filename=Littelfuse-Power-Semiconductors-CLA100E1200HB-Datasheet
Виробник: IXYS
Description: SCR 1.2KV 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+531.45 грн
30+ 408.68 грн
120+ 365.66 грн
MCMA140PD1600T-NMI
Виробник: IXYS
Description: SCR MODULE
Packaging: Box
Part Status: Discontinued at Digi-Key
товар відсутній
MMIX1T660N04T4 media?resourcetype=datasheets&itemid=30f1d503-ac26-4011-9abc-ad3d4c6bca0f&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1t660n04t4_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 40V 660A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
товар відсутній
DSEP12-12BZ-TRL media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf
DSEP12-12BZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
ZY200R460 littelfuse_power_semiconductors_product_catalog.pdf.pdf
Виробник: IXYS
Description: ZY200R460
Packaging: Bulk
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
250+175.41 грн
Мінімальне замовлення: 250
MCC162-16IO1B media?resourcetype=datasheets&amp;itemid=39564359-d67a-4cc3-b2ec-a1b9c4f6f8d0&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc162-14io1b_mcc162-16io1b_mcc162-18io1b_mcd162-16io1b%2520datasheet.pdf
MCC162-16IO1B
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYH30N120A4 media?resourcetype=datasheets&itemid=9fce9f90-2af9-4a75-bf7f-be975fe328f4&filename=littelfuse_discrete_igbts_xpt_ixy_30n120a4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+386.22 грн
Мінімальне замовлення: 300
IXTA3N150HV-TRL
IXTA3N150HV-TRL
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
товар відсутній
DSS6-015AS-TUB media?resourcetype=datasheets&itemid=5fbcc22e-8dd2-4cad-af93-9833760e86bf&filename=power_semiconductor_discrete_diode_dss6-015as_datasheet.pdf
Виробник: IXYS
Description: DIODE SCHOTTKY 150V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 33 66 78 79 80 81 82 83 84 85 86 87 88 99 132 165 198 231 264 297 330 334  [ Наступна Сторінка >> ]