IXFH80N60X2A IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 80A; Idm: 160A; 890W, Type of transistor: N-MOSFET, Technology: HiPerFET™; X2-Class, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 80A, Pulsed drain current: 160A, Power dissipation: 890W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 38mΩ, Mounting: THT, Gate charge: 0.14µC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Application: automotive industry, Reverse recovery time: 200ns.