Фото | Назва | Виробник | Інформація |
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FMM22-06PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A Mounting: THT Kind of package: tube Gate charge: 58nC Technology: PolarHV™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 66A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.35Ω Type of transistor: N-MOSFET x2 Power dissipation: 130W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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FMM50-025TF | IXYS |
![]() Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A Polarisation: unipolar Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 84ns Drain-source voltage: 250V Drain current: 30A On-state resistance: 60mΩ Type of transistor: N-MOSFET x2 Power dissipation: 125W Kind of package: tube Gate charge: 78nC Technology: HiPerFET™; Trench Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 130A Mounting: THT кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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FMM75-01F | IXYS |
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на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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FUE30-12N1 | IXYS |
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товар відсутній |
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FUO22-12N | IXYS |
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на замовлення 272 шт: термін постачання 14-21 дні (днів) |
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FUO22-16N | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a кількість в упаковці: 1 шт |
на замовлення 152 шт: термін постачання 14-21 дні (днів) |
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FUO50-16N | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 50A Max. forward impulse current: 270A Electrical mounting: THT Max. forward voltage: 1.04V Case: ISOPLUS i4-pac™ x024a кількість в упаковці: 1 шт |
на замовлення 189 шт: термін постачання 14-21 дні (днів) |
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GBO25-12NO1 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Kind of package: tube Version: flat Leads: flat pin Max. off-state voltage: 1.2kV Load current: 25A Max. forward impulse current: 370A Electrical mounting: THT Type of bridge rectifier: single-phase Case: GBFP кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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GBO25-16NO1 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Kind of package: tube Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Case: GBFP кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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GUO40-08NO1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 800V; If: 40A; Ifsm: 370A; THT Case: GUFP Max. forward voltage: 1.06V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Leads: flat pin Max. off-state voltage: 0.8kV кількість в упаковці: 1 шт |
товар відсутній |
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GUO40-12NO1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Max. forward voltage: 1.06V Leads: flat pin Case: GUFP кількість в упаковці: 1 шт |
на замовлення 126 шт: термін постачання 14-21 дні (днів) |
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GUO40-16NO1 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A Case: GUFP Max. forward voltage: 1.06V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Leads: flat pin Max. off-state voltage: 1.6kV кількість в упаковці: 1 шт |
на замовлення 94 шт: термін постачання 14-21 дні (днів) |
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ITF48IF1200HR | IXYS |
![]() Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Mounting: THT Kind of package: tube Case: ISO247™ Power dissipation: 390W Technology: Trench; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT Gate charge: 175nC кількість в упаковці: 1 шт |
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IX2113G | IXYS |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP14; -2÷2A Mounting: THT Operating temperature: -40...125°C Integrated circuit features: 3,3V logic compatible; propagation delays matching: 20ns; tolerant to negative voltage transient: du/dt immune; UVLO (UnderVoltage LockOut) Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V Case: DIP14 Supply voltage: 10...20V Output current: -2...2A Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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IX2120B | IXYS |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28 Output current: -2...2A Number of channels: 2 Supply voltage: 15...20V Mounting: SMD Operating temperature: -40...150°C Kind of package: tube Voltage class: 1.2kV кількість в упаковці: 1 шт |
на замовлення 232 шт: термін постачання 14-21 дні (днів) |
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IX2127G | IXYS |
![]() Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -500...250mA Number of channels: 1 Supply voltage: 9...12V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V кількість в упаковці: 1 шт |
на замовлення 352 шт: термін постачання 14-21 дні (днів) |
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IX2127N | IXYS |
![]() Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -500...250mA Number of channels: 1 Supply voltage: 9...12V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V кількість в упаковці: 1 шт |
на замовлення 852 шт: термін постачання 14-21 дні (днів) |
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IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 5...24V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
товар відсутній |
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IX4310NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 5...24V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 4000 шт |
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IX4310TTR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: SOT23-5 Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side Output current: -2...2A Supply voltage: 5...24V Kind of output: non-inverting кількість в упаковці: 3000 шт |
товар відсутній |
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IX4340N | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 1141 шт: термін постачання 14-21 дні (днів) |
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IX4340NE | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 1128 шт: термін постачання 14-21 дні (днів) |
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IX4340NETR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 4000 шт |
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IX4340NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 4000 шт |
товар відсутній |
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IX4340UE | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -5...5A Number of channels: 2 Kind of output: non-inverting Mounting: SMD Case: MSOP8 Kind of package: tube Supply voltage: 5...20V Operating temperature: -40...125°C кількість в упаковці: 1 шт |
на замовлення 2020 шт: термін постачання 14-21 дні (днів) |
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IX4340UETR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -5...5A Number of channels: 2 Kind of output: non-inverting Mounting: SMD Case: MSOP8 Kind of package: reel; tape Supply voltage: 5...20V Operating temperature: -40...125°C кількість в упаковці: 5000 шт |
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IX4351NE | IXYS |
![]() Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver Case: SO16-EP Output current: -9...9A Number of channels: 2 Supply voltage: -10...25V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
товар відсутній |
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IX4351NETR | IXYS |
![]() Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver Case: SO16-EP Output current: -9...9A Number of channels: 2 Supply voltage: -10...25V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 2000 шт |
товар відсутній |
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IX4426MTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -1.5...1.5A Number of channels: 2 Kind of output: inverting Mounting: SMD Case: DFN8 Kind of package: reel; tape Supply voltage: 4.5...30V Operating temperature: -40...125°C кількість в упаковці: 1 шт |
на замовлення 609 шт: термін постачання 14-21 дні (днів) |
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IX4426N | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting кількість в упаковці: 1 шт |
на замовлення 2138 шт: термін постачання 14-21 дні (днів) |
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IX4426NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting кількість в упаковці: 2000 шт |
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IX4427MTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...30V Output current: -1.5...1.5A Kind of output: non-inverting Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver кількість в упаковці: 1 шт |
на замовлення 2000 шт: термін постачання 14-21 дні (днів) |
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IX4427N | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Output current: -1.5...1.5A Kind of output: non-inverting Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver кількість в упаковці: 1 шт |
на замовлення 128 шт: термін постачання 14-21 дні (днів) |
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IX4427NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Output current: -1.5...1.5A Kind of output: non-inverting Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver кількість в упаковці: 1 шт |
на замовлення 1234 шт: термін постачання 14-21 дні (днів) |
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IX4428MTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -1.5...1.5A Number of channels: 2 Kind of output: inverting; non-inverting Mounting: SMD Case: DFN8 Kind of package: reel; tape Supply voltage: 4.5...30V Operating temperature: -40...125°C кількість в упаковці: 1 шт |
на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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IX4428N | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of output: inverting; non-inverting Kind of package: tube Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 1 шт |
на замовлення 175 шт: термін постачання 14-21 дні (днів) |
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IX4428NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 2000 шт |
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IX9907N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Output current: 1.7A Case: SO8 Mounting: SMD Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: tube Operating voltage: 650V Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver кількість в упаковці: 1 шт |
на замовлення 498 шт: термін постачання 14-21 дні (днів) |
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IX9907NTR | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Output current: 1.7A Case: SO8 Mounting: SMD Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Operating voltage: 650V Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver кількість в упаковці: 2000 шт |
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IX9908N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Output current: 1.7A Case: SO8 Mounting: SMD Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: tube Operating voltage: 650V Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver кількість в упаковці: 1 шт |
на замовлення 289 шт: термін постачання 14-21 дні (днів) |
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IX9908NTR | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Output current: 1.7A Case: SO8 Mounting: SMD Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Operating voltage: 650V Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver кількість в упаковці: 2000 шт |
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IX9915N | IXYS |
![]() Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA Kind of package: tube Mounting: SMD Supply voltage: 1.3...12.5V DC Collector-emitter voltage: 350V Output current: 20mA Type of integrated circuit: driver Reference voltage: 1.299V Case: SO8 Kind of integrated circuit: error amplifier and Darlington transistor Collector current: 0.2A кількість в упаковці: 1 шт |
на замовлення 275 шт: термін постачання 14-21 дні (днів) |
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IXA12IF1200HB | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 85W Kind of package: tube Gate charge: 27nC Technology: Planar; Sonic FRD™; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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IXA12IF1200PB | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 85W Kind of package: tube Gate charge: 27nC Technology: Planar; Sonic FRD™; XPT™ Case: TO220-3 Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 231 шт: термін постачання 14-21 дні (днів) |
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IXA17IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 18A Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 100W Kind of package: tube Gate charge: 47nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: PLUS247™ Collector-emitter voltage: 1.2kV кількість в упаковці: 300 шт |
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IXA20I1200PB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 22A Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 165W Kind of package: tube Gate charge: 47nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: TO220-3 Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
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IXA20IF1200HB | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 22A Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 165W Kind of package: tube Gate charge: 47nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
товар відсутній |
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IXA20PG1200DHGLB | IXYS |
![]() ![]() Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 23A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Technology: ISOPLUS™; Sonic FRD™ кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
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IXA27IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 27A Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 150W Kind of package: tube Gate charge: 76nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: PLUS247™ Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
товар відсутній |
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IXA30PG1200DHGLB | IXYS |
![]() ![]() Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 150W Technology: ISOPLUS™; Sonic FRD™ кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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IXA30RG1200DHGLB | IXYS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 147W Technology: ISOPLUS™; Sonic FRD™ кількість в упаковці: 1 шт |
на замовлення 53 шт: термін постачання 14-21 дні (днів) |
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IXA33IF1200HB | IXYS |
![]() Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 76nC Technology: Sonic FRD™; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV кількість в упаковці: 300 шт |
товар відсутній |
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IXA37IF1200HJ | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 37A Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 195W Kind of package: tube Gate charge: 106nC Technology: Planar; Sonic FRD™; XPT™ Case: PLUS247™ Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
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IXA40RG1200DHGLB | IXYS |
![]() ![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 43A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 105A Power dissipation: 215W Technology: ISOPLUS™; Sonic FRD™ кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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IXA45IF1200HB | IXYS |
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товар відсутній |
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IXA4I1200UC-TRL | IXYS |
![]() Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Mounting: SMD Gate charge: 12nC Collector-emitter voltage: 1.2kV Collector current: 9A Gate-emitter voltage: ±20V Pulsed collector current: 9A Case: TO252 Technology: XPT™ Turn-on time: 70ns Turn-off time: 250ns Power dissipation: 45W Type of transistor: IGBT |
товар відсутній |
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IXA4IF1200TC | IXYS |
![]() Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268 Mounting: SMD Gate-emitter voltage: ±20V Collector current: 5A Pulsed collector current: 9A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 45W Kind of package: tube Gate charge: 12nC Technology: Planar; Sonic FRD™; XPT™ Case: TO268 Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
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IXA55I1200HJ | IXYS |
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товар відсутній |
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IXA60IF1200NA | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 56A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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IXA70I1200NA | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 65A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 350W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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FMM22-06PF |
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Mounting: THT
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A
Mounting: THT
Kind of package: tube
Gate charge: 58nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 66A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET x2
Power dissipation: 130W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1665.22 грн |
2+ | 1518 грн |
FMM50-025TF |
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Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1369.7 грн |
3+ | 1248.41 грн |
FMM75-01F |
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Виробник: IXYS
FMM75-01F Multi channel transistors
FMM75-01F Multi channel transistors
на замовлення 25 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1335.46 грн |
3+ | 1262.28 грн |
FUO22-12N |
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Виробник: IXYS
FUO22-12N Three phase diode bridge rectifiers
FUO22-12N Three phase diode bridge rectifiers
на замовлення 272 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1229.18 грн |
3+ | 1162.1 грн |
FUO22-16N |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
кількість в упаковці: 1 шт
на замовлення 152 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1325.61 грн |
3+ | 1208.61 грн |
FUO50-16N |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
кількість в упаковці: 1 шт
на замовлення 189 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1568.59 грн |
2+ | 1430.25 грн |
25+ | 1331.98 грн |
GBO25-12NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Kind of package: tube
Version: flat
Leads: flat pin
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBFP
кількість в упаковці: 1 шт
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Kind of package: tube
Version: flat
Leads: flat pin
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBFP
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 944.72 грн |
2+ | 727.34 грн |
3+ | 699.53 грн |
4+ | 662.07 грн |
16+ | 649 грн |
GBO25-16NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
кількість в упаковці: 1 шт
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1042.29 грн |
2+ | 716.48 грн |
5+ | 652.48 грн |
GUO40-08NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 40A; Ifsm: 370A; THT
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 40A; Ifsm: 370A; THT
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
кількість в упаковці: 1 шт
товар відсутній
GUO40-12NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.06V
Leads: flat pin
Case: GUFP
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.06V
Leads: flat pin
Case: GUFP
кількість в упаковці: 1 шт
на замовлення 126 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1509.49 грн |
2+ | 1375.97 грн |
GUO40-16NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 1.6kV
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Case: GUFP
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Leads: flat pin
Max. off-state voltage: 1.6kV
кількість в упаковці: 1 шт
на замовлення 94 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1509.49 грн |
2+ | 1375.97 грн |
ITF48IF1200HR |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
кількість в упаковці: 1 шт
товар відсутній
IX2113G |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP14; -2÷2A
Mounting: THT
Operating temperature: -40...125°C
Integrated circuit features: 3,3V logic compatible; propagation delays matching: 20ns; tolerant to negative voltage transient: du/dt immune; UVLO (UnderVoltage LockOut)
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Case: DIP14
Supply voltage: 10...20V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP14; -2÷2A
Mounting: THT
Operating temperature: -40...125°C
Integrated circuit features: 3,3V logic compatible; propagation delays matching: 20ns; tolerant to negative voltage transient: du/dt immune; UVLO (UnderVoltage LockOut)
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Case: DIP14
Supply voltage: 10...20V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.71 грн |
5+ | 109.46 грн |
25+ | 97.57 грн |
100+ | 95.83 грн |
IX2120B |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Supply voltage: 15...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: tube
Voltage class: 1.2kV
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Supply voltage: 15...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: tube
Voltage class: 1.2kV
кількість в упаковці: 1 шт
на замовлення 232 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 319.91 грн |
3+ | 273.2 грн |
5+ | 226.5 грн |
13+ | 214.3 грн |
IX2127G |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
на замовлення 352 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.23 грн |
10+ | 88.86 грн |
32+ | 83.63 грн |
50+ | 82.76 грн |
IX2127N |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
на замовлення 852 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 132.28 грн |
5+ | 111.27 грн |
11+ | 96.7 грн |
29+ | 91.47 грн |
100+ | 89.73 грн |
IX4310N |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній
IX4310NTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
товар відсутній
IX4310TTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -2...2A
Supply voltage: 5...24V
Kind of output: non-inverting
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -2...2A
Supply voltage: 5...24V
Kind of output: non-inverting
кількість в упаковці: 3000 шт
товар відсутній
IX4340N |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 1141 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.25 грн |
5+ | 62.78 грн |
21+ | 48.78 грн |
58+ | 46.17 грн |
250+ | 44.17 грн |
IX4340NE |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 1128 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.05 грн |
5+ | 61.88 грн |
21+ | 48.78 грн |
58+ | 46.17 грн |
250+ | 44.17 грн |
IX4340NETR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
товар відсутній
IX4340NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
товар відсутній
IX4340UE |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Kind of output: non-inverting
Mounting: SMD
Case: MSOP8
Kind of package: tube
Supply voltage: 5...20V
Operating temperature: -40...125°C
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Kind of output: non-inverting
Mounting: SMD
Case: MSOP8
Kind of package: tube
Supply voltage: 5...20V
Operating temperature: -40...125°C
кількість в упаковці: 1 шт
на замовлення 2020 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.74 грн |
5+ | 61.7 грн |
21+ | 48.22 грн |
58+ | 45.59 грн |
250+ | 43.99 грн |
IX4340UETR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Kind of output: non-inverting
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Supply voltage: 5...20V
Operating temperature: -40...125°C
кількість в упаковці: 5000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Kind of output: non-inverting
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Supply voltage: 5...20V
Operating temperature: -40...125°C
кількість в упаковці: 5000 шт
товар відсутній
IX4351NE |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній
IX4351NETR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 2000 шт
товар відсутній
IX4426MTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Number of channels: 2
Kind of output: inverting
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Supply voltage: 4.5...30V
Operating temperature: -40...125°C
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Number of channels: 2
Kind of output: inverting
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Supply voltage: 4.5...30V
Operating temperature: -40...125°C
кількість в упаковці: 1 шт
на замовлення 609 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 88.19 грн |
5+ | 67.67 грн |
20+ | 50.53 грн |
55+ | 47.83 грн |
IX4426N |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
кількість в упаковці: 1 шт
на замовлення 2138 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.37 грн |
5+ | 60.97 грн |
23+ | 46.17 грн |
61+ | 43.56 грн |
250+ | 42.86 грн |
IX4426NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
кількість в упаковці: 2000 шт
товар відсутній
IX4427MTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
на замовлення 2000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 97.57 грн |
5+ | 67.67 грн |
21+ | 51.05 грн |
56+ | 48.26 грн |
500+ | 47.83 грн |
IX4427N |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
на замовлення 128 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.74 грн |
5+ | 60.97 грн |
23+ | 46.17 грн |
61+ | 43.56 грн |
250+ | 43.03 грн |
IX4427NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
на замовлення 1234 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91 грн |
23+ | 47.95 грн |
61+ | 43.56 грн |
1000+ | 41.9 грн |
IX4428MTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Number of channels: 2
Kind of output: inverting; non-inverting
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Supply voltage: 4.5...30V
Operating temperature: -40...125°C
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Number of channels: 2
Kind of output: inverting; non-inverting
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Supply voltage: 4.5...30V
Operating temperature: -40...125°C
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.37 грн |
5+ | 60.97 грн |
23+ | 45.3 грн |
61+ | 43.56 грн |
500+ | 43.03 грн |
IX4428N |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
на замовлення 175 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.43 грн |
5+ | 60.97 грн |
23+ | 45.3 грн |
61+ | 43.56 грн |
250+ | 43.03 грн |
IX4428NTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2000 шт
товар відсутній
IX9907N |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 1 шт
на замовлення 498 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 114.45 грн |
5+ | 98.61 грн |
14+ | 75.79 грн |
37+ | 72.3 грн |
250+ | 70.56 грн |
IX9907NTR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 2000 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 2000 шт
товар відсутній
IX9908N |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 1 шт
на замовлення 289 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 86.31 грн |
5+ | 75.09 грн |
18+ | 57.5 грн |
50+ | 54.01 грн |
250+ | 53.14 грн |
IX9908NTR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 2000 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
кількість в упаковці: 2000 шт
товар відсутній
IX9915N |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA
Kind of package: tube
Mounting: SMD
Supply voltage: 1.3...12.5V DC
Collector-emitter voltage: 350V
Output current: 20mA
Type of integrated circuit: driver
Reference voltage: 1.299V
Case: SO8
Kind of integrated circuit: error amplifier and Darlington transistor
Collector current: 0.2A
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA
Kind of package: tube
Mounting: SMD
Supply voltage: 1.3...12.5V DC
Collector-emitter voltage: 350V
Output current: 20mA
Type of integrated circuit: driver
Reference voltage: 1.299V
Case: SO8
Kind of integrated circuit: error amplifier and Darlington transistor
Collector current: 0.2A
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.24 грн |
5+ | 63.33 грн |
20+ | 50.53 грн |
54+ | 47.91 грн |
IXA12IF1200HB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 334.92 грн |
3+ | 290.39 грн |
5+ | 221.27 грн |
13+ | 209.07 грн |
120+ | 207.33 грн |
IXA12IF1200PB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 231 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 282.38 грн |
3+ | 245.16 грн |
6+ | 187.3 грн |
15+ | 176.84 грн |
250+ | 174.23 грн |
IXA17IF1200HJ |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
кількість в упаковці: 300 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
кількість в упаковці: 300 шт
товар відсутній
IXA20I1200PB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
IXA20IF1200HB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
IXA20PG1200DHGLB |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 23A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 23A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 944.72 грн |
2+ | 771.66 грн |
4+ | 703.01 грн |
10+ | 695.17 грн |
IXA27IF1200HJ |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 27A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 27A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
IXA30PG1200DHGLB |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 150W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 150W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1256.19 грн |
2+ | 975.21 грн |
3+ | 887.69 грн |
IXA30RG1200DHGLB |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
на замовлення 53 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 777.73 грн |
2+ | 681.2 грн |
3+ | 649.87 грн |
5+ | 620.25 грн |
10+ | 605.44 грн |
45+ | 596.73 грн |
IXA33IF1200HB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 300 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 300 шт
товар відсутній
IXA37IF1200HJ |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Technology: Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Technology: Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1087.32 грн |
2+ | 742.71 грн |
4+ | 676.01 грн |
IXA40RG1200DHGLB |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 43A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 215W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 43A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 215W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1042.29 грн |
2+ | 735.48 грн |
4+ | 669.91 грн |
IXA4I1200UC-TRL |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
товар відсутній
IXA4IF1200TC |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO268
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO268
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
IXA60IF1200NA |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2002.02 грн |
2+ | 1825.58 грн |
IXA70I1200NA |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2268.45 грн |
2+ | 2068.02 грн |
10+ | 1936.55 грн |