Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (140088) > Сторінка 2289 з 2335
| Фото | Назва | Виробник | Інформація |
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| BSB165N15NZ3GXUMA3 | Infineon Technologies |
 BSB165N15NZ3GXUMA3 |
товару немає в наявності |
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| BSB165N15NZ3GXUMA2 | Infineon Technologies |
BSB165N15NZ3GXUMA2 |
товару немає в наявності |
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CY5677 | Infineon Technologies |
CYBL11573-56LQX Bluetooth Development Board |
товару немає в наявності |
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SLB9672VU20FW1523XTMA1 | Infineon Technologies |
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R |
товару немає в наявності |
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SLB9672AU20FW1610XTMA1 | Infineon Technologies |
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R |
товару немає в наявності |
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| SLB9672XU20FW1523XTMA1 | Infineon Technologies |
TPM |
товару немає в наявності |
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SLB9672XU20FW1613XTMA1 | Infineon Technologies |
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R |
товару немає в наявності |
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| SLB9672AU20FW1612XTMA1 | Infineon Technologies | SP005750322 |
товару немає в наявності |
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SLB9672AU20FW1613XTMA1 | Infineon Technologies |
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R |
товару немає в наявності |
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| SLB9672VU20FW1522XTMA1 | Infineon Technologies |
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R |
товару немає в наявності |
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| IPTC025N15NM6ATMA1 | Infineon Technologies |
IPTC025N15NM6ATMA1 |
товару немає в наявності |
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| IPT025N15NM6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R |
товару немає в наявності |
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| ISC055N15NM6ATMA1 | Infineon Technologies | ISC055N15NM6ATMA1 |
товару немає в наявності |
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| ISC044N15NM6ATMA1 | Infineon Technologies | ISC044N15NM6ATMA1 |
товару немає в наявності |
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| IPF026N15NM6ATMA1 | Infineon Technologies | IPF026N15NM6ATMA1 |
товару немає в наявності |
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| IPP089N15NM6AKSA1 | Infineon Technologies | IPP089N15NM6AKSA1 |
товару немає в наявності |
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| T3401N33TOFS20XPSA1 | Infineon Technologies | SP000091136 |
товару немає в наявності |
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| BSL215C H6327 | Infineon Technologies |
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R |
товару немає в наявності |
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IGB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 170W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
товару немає в наявності |
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IGP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 170W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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IGW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 170W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IKB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 85W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 36ns Turn-off time: 205ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
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IKB20N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 166W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
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IKP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 85W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 0.12µC Kind of package: tube Manufacturer series: H3 Turn-on time: 31ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
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IKP20N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 36ns Turn-off time: 299ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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IKW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 85W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 28ns Turn-off time: 205ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IKW20N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 36ns Turn-off time: 299ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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SPA20N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 34.5W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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SPA20N60CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 35W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhanced |
товару немає в наявності |
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SPB20N60C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 927 шт: термін постачання 21-30 дні (днів) |
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SPB20N60S5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
товару немає в наявності |
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IRL3103STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
товару немає в наявності |
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IRLML0030TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 7420 шт: термін постачання 21-30 дні (днів) |
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IRFR220NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товару немає в наявності |
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IRFR220NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 2955 шт: термін постачання 21-30 дні (днів) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SC79 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.25W Kind of package: reel; tape |
на замовлення 3791 шт: термін постачання 21-30 дні (днів) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape |
на замовлення 3374 шт: термін постачання 21-30 дні (днів) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape |
на замовлення 17022 шт: термін постачання 21-30 дні (днів) |
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IRFZ48NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 94W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced |
на замовлення 544 шт: термін постачання 21-30 дні (днів) |
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IRFZ48NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товару немає в наявності |
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IRFB7545PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 95A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET |
на замовлення 277 шт: термін постачання 21-30 дні (днів) |
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IRLML5203TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 7529 шт: термін постачання 21-30 дні (днів) |
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BC857AE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2823 шт: термін постачання 21-30 дні (днів) |
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IRF9Z34NPBF | INFINEON TECHNOLOGIES |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -19A Power dissipation: 68W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 23.3nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1212 шт: термін постачання 21-30 дні (днів) |
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IKP15N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 18A Power dissipation: 52.5W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 38nC Kind of package: tube Manufacturer series: H5 Turn-on time: 24ns Turn-off time: 166ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
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IR2104PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -270...130mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
на замовлення 183 шт: термін постачання 21-30 дні (днів) |
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IR2104SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
на замовлення 309 шт: термін постачання 21-30 дні (днів) |
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IR2104STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
на замовлення 2102 шт: термін постачання 21-30 дні (днів) |
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IRFB3806PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 71W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced |
на замовлення 341 шт: термін постачання 21-30 дні (днів) |
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IGB50N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 333W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
товару немає в наявності |
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IGP50N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 333W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
товару немає в наявності |
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IGW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 333W Kind of package: tube Manufacturer series: H3 Technology: TRENCHSTOP™ 3 Mounting: THT Case: TO247-3 |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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IGW50N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 333W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Kind of package: tube |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IKW50N60DTPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 61A Pulsed collector current: 150A Turn-on time: 50ns Turn-off time: 233ns Type of transistor: IGBT Power dissipation: 159.6W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 249nC Technology: TRENCHSTOP™ Mounting: THT |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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IKW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 315nC Kind of package: tube Manufacturer series: H3 Turn-on time: 54ns Turn-off time: 297ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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IKW50N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 333W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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AIKW50N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 333W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 310nC Kind of package: tube Turn-on time: 55ns Turn-off time: 328ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
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IKFW50N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 95W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 60ns Turn-off time: 192ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IKFW50N60ETXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 59A Power dissipation: 120W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 290nC Kind of package: tube Turn-on time: 61ns Turn-off time: 332ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
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| IPD50N06S409ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced |
товару немає в наявності |
| CY5677 |
|
Виробник: Infineon Technologies
CYBL11573-56LQX Bluetooth Development Board
CYBL11573-56LQX Bluetooth Development Board
товару немає в наявності
| SLB9672VU20FW1523XTMA1 |
|
Виробник: Infineon Technologies
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
товару немає в наявності
| SLB9672AU20FW1610XTMA1 |
|
Виробник: Infineon Technologies
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
товару немає в наявності
| SLB9672XU20FW1613XTMA1 |
|
Виробник: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
товару немає в наявності
| SLB9672AU20FW1613XTMA1 |
|
Виробник: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
товару немає в наявності
| SLB9672VU20FW1522XTMA1 |
|
Виробник: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
товару немає в наявності
| IPT025N15NM6ATMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R
Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R
товару немає в наявності
| BSL215C H6327 |
|
Виробник: Infineon Technologies
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
товару немає в наявності
| IGB20N60H3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 170W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 170W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
товару немає в наявності
| IGP20N60H3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 170W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 170W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
на замовлення 485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.59 грн |
| 10+ | 87.98 грн |
| 11+ | 84.28 грн |
| 29+ | 79.84 грн |
| 250+ | 76.89 грн |
| IGW20N60H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 170W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 170W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.25 грн |
| 8+ | 116.81 грн |
| 21+ | 110.15 грн |
| IKB20N60H3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 85W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 85W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
| IKB20N60TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
| IKP20N60H3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 85W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 85W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
| IKP20N60TXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.78 грн |
| 8+ | 115.33 грн |
| 21+ | 109.41 грн |
| 100+ | 105.72 грн |
| IKW20N60H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.04 грн |
| 3+ | 235.09 грн |
| 5+ | 179.65 грн |
| 14+ | 170.04 грн |
| IKW20N60TFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.06 грн |
| 6+ | 156.73 грн |
| 16+ | 148.6 грн |
| SPA20N60C3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.45 грн |
| 3+ | 229.18 грн |
| 5+ | 197.39 грн |
| 12+ | 187.04 грн |
| SPA20N60CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhanced
товару немає в наявності
| SPB20N60C3 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 249.99 грн |
| 5+ | 177.43 грн |
| 14+ | 167.82 грн |
| 250+ | 165.6 грн |
| SPB20N60S5 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності
| IRL3103STRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товару немає в наявності
| IRLML0030TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 7420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.7 грн |
| 29+ | 13.09 грн |
| 36+ | 10.35 грн |
| 100+ | 7.76 грн |
| 159+ | 5.4 грн |
| 437+ | 5.1 грн |
| 3000+ | 5.03 грн |
| IRFR220NTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
| IRFR220NTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.93 грн |
| 45+ | 19.52 грн |
| 122+ | 18.41 грн |
| BAS1602VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 3791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.17 грн |
| 68+ | 5.47 грн |
| 76+ | 4.91 грн |
| 100+ | 4.13 грн |
| 250+ | 3.72 грн |
| 294+ | 2.92 грн |
| 807+ | 2.76 грн |
| BAS1603WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 3374 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 9.71 грн |
| 90+ | 4.14 грн |
| 100+ | 3.72 грн |
| 285+ | 3.04 грн |
| 500+ | 3.03 грн |
| 780+ | 2.87 грн |
| BAS16E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
на замовлення 17022 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 78+ | 5.13 грн |
| 90+ | 4.14 грн |
| 109+ | 3.4 грн |
| 122+ | 3.05 грн |
| 250+ | 2.83 грн |
| 350+ | 2.45 грн |
| 961+ | 2.31 грн |
| IRFZ48NPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 544 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.14 грн |
| 10+ | 45.84 грн |
| 32+ | 27.35 грн |
| 87+ | 25.88 грн |
| IRFZ48NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товару немає в наявності
| IRFB7545PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 277 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 40.6 грн |
| 12+ | 32.53 грн |
| 34+ | 25.73 грн |
| 92+ | 24.32 грн |
| IRLML5203TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 7529 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.25 грн |
| 24+ | 15.52 грн |
| 50+ | 11.38 грн |
| 100+ | 9.98 грн |
| 151+ | 5.69 грн |
| 415+ | 5.4 грн |
| BC857AE6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 2.76 грн |
| 179+ | 2.07 грн |
| 209+ | 1.77 грн |
| 232+ | 1.6 грн |
| 250+ | 1.48 грн |
| 500+ | 1.4 грн |
| 701+ | 1.23 грн |
| 1926+ | 1.16 грн |
| IRF9Z34NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 43.79 грн |
| 12+ | 32.16 грн |
| 37+ | 23.51 грн |
| 101+ | 22.25 грн |
| 500+ | 21.59 грн |
| 1000+ | 21.29 грн |
| IKP15N65F5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 18A
Power dissipation: 52.5W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 24ns
Turn-off time: 166ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 18A
Power dissipation: 52.5W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 24ns
Turn-off time: 166ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
| IR2104PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
на замовлення 183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.69 грн |
| 8+ | 121.98 грн |
| 20+ | 115.33 грн |
| IR2104SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
на замовлення 309 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.78 грн |
| 10+ | 123.46 грн |
| 11+ | 82.06 грн |
| 29+ | 77.62 грн |
| IR2104STRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
на замовлення 2102 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 86.78 грн |
| 20+ | 44.73 грн |
| 53+ | 42.29 грн |
| IRFB3806PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 341 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.63 грн |
| 8+ | 49.75 грн |
| 10+ | 42.14 грн |
| 25+ | 34.52 грн |
| 69+ | 32.68 грн |
| IGB50N60TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
товару немає в наявності
| IGP50N60TXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
товару немає в наявності
| IGW50N60H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 333W
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 333W
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Mounting: THT
Case: TO247-3
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 333.59 грн |
| 4+ | 220.31 грн |
| 11+ | 208.48 грн |
| IGW50N60TFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Kind of package: tube
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.58 грн |
| 4+ | 221.79 грн |
| 11+ | 209.96 грн |
| IKW50N60DTPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Turn-on time: 50ns
Turn-off time: 233ns
Type of transistor: IGBT
Power dissipation: 159.6W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 249nC
Technology: TRENCHSTOP™
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Turn-on time: 50ns
Turn-off time: 233ns
Type of transistor: IGBT
Power dissipation: 159.6W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 249nC
Technology: TRENCHSTOP™
Mounting: THT
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 196.65 грн |
| 7+ | 125.68 грн |
| 19+ | 118.29 грн |
| IKW50N60H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 186 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 367.82 грн |
| 4+ | 266.14 грн |
| 9+ | 251.36 грн |
| 120+ | 246.18 грн |
| IKW50N60TFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 392.5 грн |
| 3+ | 304.59 грн |
| 8+ | 288.32 грн |
| 30+ | 277.23 грн |
| AIKW50N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
| IKFW50N60DH3EXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 95W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 95W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 441.07 грн |
| 4+ | 269.1 грн |
| IKFW50N60ETXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 59A
Power dissipation: 120W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 59A
Power dissipation: 120W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
| IPD50N06S409ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
товару немає в наявності