Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2291 з 2324
| Фото | Назва | Виробник | Інформація |
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| ITS4200SMEPHUMA1 | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 On-state resistance: 0.15Ω Kind of package: reel; tape Supply voltage: 11...45V DC Technology: Industrial PROFET Operating temperature: -40...125°C |
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IPP086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRLR8256TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 81A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRS2184SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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| IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Kind of package: reel; tape DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: I2C; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of integrated circuit: POL converter Topology: buck Mounting: SMD Operating temperature: -40...125°C Case: PQFN5X7 |
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IDWD15G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 200W; TO247-2 Case: TO247-2 Mounting: THT Power dissipation: 200W Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 170A Technology: CoolSiC™ 5G; SiC |
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BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz |
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TLD1120ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.36A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
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IRFP4710PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 72A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| IPD70N10S312ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 280A Power dissipation: 125W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Kind of channel: enhanced |
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IRF7504TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.7A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AIGW40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns |
на замовлення 234 шт: термін постачання 21-30 дні (днів) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 160ns |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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AIKW40N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns Features of semiconductor devices: integrated anti-parallel diode |
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AIKW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 164ns Features of semiconductor devices: integrated anti-parallel diode |
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IRFH5010TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5015TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 10A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFB4137PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 341W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhanced |
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IRF6665TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.2A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IKW30N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 39.5A; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 39.5A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 29ns Turn-off time: 154ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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AIKW50N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 22ns Turn-off time: 256ns Features of semiconductor devices: integrated anti-parallel diode |
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AIKW50N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns Features of semiconductor devices: integrated anti-parallel diode |
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IRFB38N20DPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 399 шт: термін постачання 21-30 дні (днів) |
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BTS4141N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SOT223-4 On-state resistance: 0.175Ω Technology: Classic PROFET Output voltage: 12...45V |
на замовлення 3889 шт: термін постачання 21-30 дні (днів) |
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ITS4141NHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.2Ω Kind of package: reel; tape Supply voltage: 12...45V DC Technology: Industrial PROFET Operating temperature: -30...85°C Power dissipation: 1.4W Turn-on time: 150µs Turn-off time: 0.1ms |
на замовлення 5830 шт: термін постачання 21-30 дні (днів) |
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XMC1404F064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Case: PG-LQFP-64 Operating temperature: -40...105°C Memory: 16kB SRAM; 64kB FLASH Family: XMC1400 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Type of integrated circuit: ARM microcontroller |
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XMC1404F064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Case: PG-LQFP-64 Operating temperature: -40...105°C Memory: 16kB SRAM; 128kB FLASH Family: XMC1400 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Type of integrated circuit: ARM microcontroller |
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XMC1404F064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Case: PG-LQFP-64 Operating temperature: -40...105°C Memory: 16kB SRAM; 200kB FLASH Family: XMC1400 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Type of integrated circuit: ARM microcontroller |
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XMC1404Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1404Q048X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 200kB FLASH |
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XMC1404Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH |
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| XMC1404Q064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 128kB FLASH |
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XMC1404Q064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 200kB FLASH |
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BSP92PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.26A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 1014 шт: термін постачання 21-30 дні (днів) |
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IR2011PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -1...1A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 80ns Turn-off time: 60ns |
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IR2011SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1...1A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 80ns Turn-off time: 60ns |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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IRF7854TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 10A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 10A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| BSZ084N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhanced |
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BSZ088N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ |
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BSZ088N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ |
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IRG4RC10KDTRPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 9A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 9A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Features of semiconductor devices: integrated anti-parallel diode |
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IRG4RC10UDPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode |
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AIHD06N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 100W; DPAK Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 48nC Technology: TRENCHSTOP™ Case: DPAK Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 18A Turn-on time: 16ns Turn-off time: 127ns Type of transistor: IGBT Power dissipation: 100W |
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IRG4BC40W-LPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 160W; TO262 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: TO262 Mounting: THT Kind of package: tube |
товар відсутній |
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IRG4BC40W-STRRP | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of package: reel |
товар відсутній |
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IRL530NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 844 шт: термін постачання 21-30 дні (днів) |
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| TD280N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 280A Max. load current: 280A Case: BG-PB50SB-1 Max. forward voltage: 1.77V Max. forward impulse current: 9kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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| TD280N18SOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 280A; BG-PB50SB-1; Ufmax: 1.77V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 280A Max. load current: 280A Case: BG-PB50SB-1 Max. forward voltage: 1.77V Max. forward impulse current: 9kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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IRS21271SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current sensor; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 190ns |
товар відсутній |
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IRS2127PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor,high-side; DIP8; -600÷290mA; 1W; Ch: 1 Mounting: THT Kind of package: tube Kind of integrated circuit: current sensor; high-side Voltage class: 600V Operating temperature: -40...125°C Case: DIP8 Power: 1W Supply voltage: 12...20V DC Turn-on time: 0.2µs Turn-off time: 190ns Output current: -600...290mA Type of integrated circuit: driver Number of channels: 1 |
товар відсутній |
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TD162N16KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 162A; BG-PB34-1; Ufmax: 1.41V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 162A Case: BG-PB34-1 Max. forward voltage: 1.41V Max. forward impulse current: 5.2kA Gate current: 150mA Electrical mounting: screw Max. load current: 260A Mechanical mounting: screw |
товар відсутній |
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IPP60R099P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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IRL3803STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 140A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |
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IRFR1205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Power dissipation: 107W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 37A Drain-source voltage: 55V Technology: HEXFET® Kind of channel: enhanced |
на замовлення 1324 шт: термін постачання 21-30 дні (днів) |
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IPB009N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 180A On-state resistance: 0.95mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: logic level |
товар відсутній |
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| IPD33CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 108A Power dissipation: 58W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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IRFSL7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 1kA Power dissipation: 230W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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IPA105N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 37A Power dissipation: 40.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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BSC009NE2LS5IATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
| ITS4200SMEPHUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.15Ω
Kind of package: reel; tape
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.15Ω
Kind of package: reel; tape
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
товар відсутній
| IPP086N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRLR8256TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRS2184SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
| IR38265MTRPBFAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
товар відсутній
| IDWD15G120C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 200W; TO247-2
Case: TO247-2
Mounting: THT
Power dissipation: 200W
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 170A
Technology: CoolSiC™ 5G; SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 200W; TO247-2
Case: TO247-2
Mounting: THT
Power dissipation: 200W
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 170A
Technology: CoolSiC™ 5G; SiC
товар відсутній
| BSP61H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
товар відсутній
| TLD1120ELXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.26 грн |
| 9+ | 45.56 грн |
| 23+ | 39.71 грн |
| 61+ | 37.47 грн |
| 500+ | 36.04 грн |
| IRFP4710PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPD70N10S312ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7504TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AIGW40N65F5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
на замовлення 234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 543.07 грн |
| 2+ | 439.84 грн |
| 6+ | 415.86 грн |
| 90+ | 397.13 грн |
| AIGW40N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
на замовлення 188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.13 грн |
| 3+ | 334.94 грн |
| 8+ | 316.96 грн |
| AIKW40N65DF5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AIKW40N65DH5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFH5010TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5015TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFB4137PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF6665TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IKW30N65ES5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 154ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 154ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 363.93 грн |
| 3+ | 304.22 грн |
| 4+ | 234.53 грн |
| 11+ | 221.79 грн |
| AIKW50N65DH5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 22ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 22ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AIKW50N65DF5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFB38N20DPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.95 грн |
| 10+ | 119.89 грн |
| 12+ | 75.68 грн |
| 32+ | 71.93 грн |
| BSP89H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 399 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.73 грн |
| 15+ | 26.3 грн |
| 25+ | 22.33 грн |
| 47+ | 18.96 грн |
| 127+ | 17.98 грн |
| 250+ | 17.91 грн |
| BTS4141N | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
на замовлення 3889 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.69 грн |
| 10+ | 92.91 грн |
| 26+ | 87.67 грн |
| ITS4141NHUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
на замовлення 5830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.11 грн |
| 10+ | 107.15 грн |
| 11+ | 80.18 грн |
| 31+ | 75.68 грн |
| 500+ | 72.68 грн |
| XMC1404F064X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Case: PG-LQFP-64
Operating temperature: -40...105°C
Memory: 16kB SRAM; 64kB FLASH
Family: XMC1400
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Case: PG-LQFP-64
Operating temperature: -40...105°C
Memory: 16kB SRAM; 64kB FLASH
Family: XMC1400
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
товар відсутній
| XMC1404F064X0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Case: PG-LQFP-64
Operating temperature: -40...105°C
Memory: 16kB SRAM; 128kB FLASH
Family: XMC1400
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Case: PG-LQFP-64
Operating temperature: -40...105°C
Memory: 16kB SRAM; 128kB FLASH
Family: XMC1400
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
товар відсутній
| XMC1404F064X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Case: PG-LQFP-64
Operating temperature: -40...105°C
Memory: 16kB SRAM; 200kB FLASH
Family: XMC1400
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Case: PG-LQFP-64
Operating temperature: -40...105°C
Memory: 16kB SRAM; 200kB FLASH
Family: XMC1400
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
товар відсутній
| XMC1404Q048X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1404Q048X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 200kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 200kB FLASH
товар відсутній
| XMC1404Q064X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
товар відсутній
| XMC1404Q064X0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 128kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 128kB FLASH
товар відсутній
| XMC1404Q064X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 200kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 200kB FLASH
товар відсутній
| BSP92PH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.26A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.26A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1014 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.38 грн |
| 12+ | 33.12 грн |
| 50+ | 25.1 грн |
| 65+ | 13.56 грн |
| 177+ | 12.89 грн |
| IR2011PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
товар відсутній
| IR2011SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.77 грн |
| 5+ | 210.55 грн |
| 6+ | 160.35 грн |
| 15+ | 152.11 грн |
| IRF7854TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BSZ084N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ088N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
товар відсутній
| BSZ088N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
товар відсутній
| IRG4RC10KDTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRG4RC10UDPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AIHD06N60RFATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 48nC
Technology: TRENCHSTOP™
Case: DPAK
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 18A
Turn-on time: 16ns
Turn-off time: 127ns
Type of transistor: IGBT
Power dissipation: 100W
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 48nC
Technology: TRENCHSTOP™
Case: DPAK
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 18A
Turn-on time: 16ns
Turn-off time: 127ns
Type of transistor: IGBT
Power dissipation: 100W
товар відсутній
| IRG4BC40W-LPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: TO262
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: TO262
Mounting: THT
Kind of package: tube
товар відсутній
| IRG4BC40W-STRRP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
товар відсутній
| IRL530NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 844 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.03 грн |
| 10+ | 75.08 грн |
| 24+ | 37.47 грн |
| 65+ | 35.44 грн |
| TD280N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Max. load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Max. load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TD280N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Max. load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Max. load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IRS21271SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
товар відсутній
| IRS2127PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; DIP8; -600÷290mA; 1W; Ch: 1
Mounting: THT
Kind of package: tube
Kind of integrated circuit: current sensor; high-side
Voltage class: 600V
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 12...20V DC
Turn-on time: 0.2µs
Turn-off time: 190ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; DIP8; -600÷290mA; 1W; Ch: 1
Mounting: THT
Kind of package: tube
Kind of integrated circuit: current sensor; high-side
Voltage class: 600V
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 12...20V DC
Turn-on time: 0.2µs
Turn-off time: 190ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 1
товар відсутній
| TD162N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 162A; BG-PB34-1; Ufmax: 1.41V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34-1
Max. forward voltage: 1.41V
Max. forward impulse current: 5.2kA
Gate current: 150mA
Electrical mounting: screw
Max. load current: 260A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 162A; BG-PB34-1; Ufmax: 1.41V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34-1
Max. forward voltage: 1.41V
Max. forward impulse current: 5.2kA
Gate current: 150mA
Electrical mounting: screw
Max. load current: 260A
Mechanical mounting: screw
товар відсутній
| IPP60R099P7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 326.81 грн |
| 3+ | 272.75 грн |
| 4+ | 263.76 грн |
| 10+ | 248.77 грн |
| 50+ | 239.03 грн |
| IRL3803STRLPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRFR1205TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Power dissipation: 107W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 37A
Drain-source voltage: 55V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Power dissipation: 107W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 37A
Drain-source voltage: 55V
Technology: HEXFET®
Kind of channel: enhanced
на замовлення 1324 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 83.92 грн |
| 10+ | 51.7 грн |
| 29+ | 31.17 грн |
| 78+ | 29.45 грн |
| IPB009N03LGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 180A
On-state resistance: 0.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 180A
On-state resistance: 0.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: logic level
товар відсутній
| IPD33CN10NGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFSL7437PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.41 грн |
| 10+ | 83.17 грн |
| 14+ | 65.94 грн |
| 37+ | 62.19 грн |
| IPA105N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 37A
Power dissipation: 40.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 37A
Power dissipation: 40.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 419.61 грн |
| 3+ | 335.69 грн |
| 4+ | 256.26 грн |
| 10+ | 242.03 грн |
| 100+ | 233.78 грн |
| BSC009NE2LS5IATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній