Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2285 з 2324
Фото | Назва | Виробник | Інформація |
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IMW120R220M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W Mounting: THT Drain-source voltage: 1.2kV Drain current: 9.5A On-state resistance: 416mΩ Type of transistor: N-MOSFET Power dissipation: 37.5W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 21A Case: TO247 |
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IMZ120R220M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W Mounting: THT Drain-source voltage: 1.2kV Drain current: 9.5A On-state resistance: 416mΩ Type of transistor: N-MOSFET Power dissipation: 37.5W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 21A Case: TO247-4 |
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IRFR5410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 3978 шт: термін постачання 21-30 дні (днів) |
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IRFR5410TRRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPW60R099C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 110W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R099CPFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R099P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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ESD101B102ELSE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Case: TSSLP-2-4 Features of semiconductor devices: ESD protection Leakage current: 20nA Max. forward impulse current: 2A Kind of package: reel; tape Peak pulse power dissipation: 30W Breakdown voltage: 6.1V |
на замовлення 8340 шт: термін постачання 21-30 дні (днів) |
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BSP742R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET |
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IRGP4066DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Power dissipation: 454W Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Collector-emitter voltage: 600V |
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AUIRGP4066D1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC Technology: Trench Mounting: THT Case: TO247AC Kind of package: tube Turn-on time: 115ns Turn-off time: 320ns Power dissipation: 227W Type of transistor: IGBT Gate charge: 225nC Collector current: 90A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Pulsed collector current: 225A |
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 69ns Turn-off time: 401ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IRGPS40B120UDP | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 595W; SUPER247; single transistor Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 595W Case: SUPER247 Mounting: THT Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
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IRFS7730TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 174A Pulsed drain current: 984A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 407nC Kind of package: reel Kind of channel: enhanced |
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IRFR3910TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 2412 шт: термін постачання 21-30 дні (днів) |
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IRFR120ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.7A Power dissipation: 35W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFL4105TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.7A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IRFL4315TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.6A Power dissipation: 2.8W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 On-state resistance: 10Ω Drain current: 0.15A Drain-source voltage: 100V Power dissipation: 0.5W Gate charge: 0.6nC Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.77A Type of transistor: N-MOSFET |
на замовлення 3815 шт: термін постачання 21-30 дні (днів) |
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IRF5803TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.4A Power dissipation: 1.3W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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IPB60R160C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhanced |
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2EDF7275FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-16 Output current: -8...4A Number of channels: 2 Supply voltage: 3...3.5V; 4.5...20V Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 650V |
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IPA60R160C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R060P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R080P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 83A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
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IPA60R099P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R125C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R125CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R125P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R160P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R165CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R170CFD7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A Type of transistor: N-MOSFET Technology: CoolMOS™ CFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 51A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced |
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IPA60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
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IPA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPA60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R190P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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IPA60R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 34W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ CP Kind of channel: enhanced Gate-source voltage: ±20V |
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IPA60R230P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16.8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 331 шт: термін постачання 21-30 дні (днів) |
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IR2213SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...1.7A Power: 1.25W Number of channels: 2 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 280ns Turn-off time: 225ns |
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IPB60R190C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Technology: CoolMOS™ C6 Kind of channel: enhanced Gate-source voltage: ±20V |
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IPI60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3 Mounting: THT Case: PG-TO262-3 Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Technology: CoolMOS™ C6 Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IPP60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ C6 Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IPW60R190C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Mounting: THT Case: PG-TO247-3 Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ C6 Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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PVDZ172NPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET Case: DIP8 On-state resistance: 0.25Ω Operating temperature: -40...85°C Contacts configuration: SPST-NO Max. operating current: 1.5A Type of relay: solid state Relay variant: MOSFET Relay series: PVDZ172NPbF Control current: 5...25mA Operate time: 2ms Release time: 0.5ms Switched voltage: 0...60V DC Mounting: THT |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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IMW65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 100A Power dissipation: 125W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 63mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 36A On-state resistance: 59mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -10...20V Pulsed drain current: 130A Case: TO247 |
товар відсутній |
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AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 36A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 130A Case: TO247 |
товар відсутній |
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FS10R12VT3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W |
товар відсутній |
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IPP50R380CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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TT142N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 142A Case: BG-PB34-1 Max. forward voltage: 1.56V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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IRS21867SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
на замовлення 2028 шт: термін постачання 21-30 дні (днів) |
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IRFB5615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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2EDF7175FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Kind of package: reel; tape Output current: -2...1A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; MOSFET gate driver Topology: MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-16 Supply voltage: 3...3.5V; 4.5...20V |
товар відсутній |
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2EDL05N06PFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
на замовлення 1462 шт: термін постачання 21-30 дні (днів) |
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2EDL05N06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-14 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
товар відсутній |
IMW120R220M1HXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247
товар відсутній
IMZ120R220M1HXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247-4
товар відсутній
IRFR5410TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 3978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 94.41 грн |
10+ | 72.68 грн |
30+ | 29.37 грн |
83+ | 27.8 грн |
IRFR5410TRRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPW60R099C6FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPW60R099C7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPW60R099CPFKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPW60R099P6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
ESD101B102ELSE6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Case: TSSLP-2-4
Features of semiconductor devices: ESD protection
Leakage current: 20nA
Max. forward impulse current: 2A
Kind of package: reel; tape
Peak pulse power dissipation: 30W
Breakdown voltage: 6.1V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Case: TSSLP-2-4
Features of semiconductor devices: ESD protection
Leakage current: 20nA
Max. forward impulse current: 2A
Kind of package: reel; tape
Peak pulse power dissipation: 30W
Breakdown voltage: 6.1V
на замовлення 8340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 31.47 грн |
33+ | 11.61 грн |
41+ | 9.29 грн |
100+ | 6.52 грн |
171+ | 5.17 грн |
468+ | 4.87 грн |
1300+ | 4.72 грн |
BSP742R |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 129.11 грн |
5+ | 100.41 грн |
13+ | 72.68 грн |
34+ | 68.19 грн |
1000+ | 66.69 грн |
2500+ | 65.19 грн |
BSP742RIXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
товар відсутній
IRGP4066DPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 454W
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 454W
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Collector-emitter voltage: 600V
товар відсутній
AUIRGP4066D1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Technology: Trench
Mounting: THT
Case: TO247AC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 320ns
Power dissipation: 227W
Type of transistor: IGBT
Gate charge: 225nC
Collector current: 90A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 225A
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Technology: Trench
Mounting: THT
Case: TO247AC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 320ns
Power dissipation: 227W
Type of transistor: IGBT
Gate charge: 225nC
Collector current: 90A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 225A
товар відсутній
IKW75N60TFKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 579.39 грн |
3+ | 413.62 грн |
6+ | 390.39 грн |
IRGPS40B120UDP |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 595W; SUPER247; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 595W
Case: SUPER247
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 595W; SUPER247; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 595W
Case: SUPER247
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRFS7730TRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFR3910TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2412 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 71.01 грн |
28+ | 31.4 грн |
77+ | 29.75 грн |
1000+ | 29.37 грн |
2000+ | 28.55 грн |
IRFR120ZTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFL4105TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 50.84 грн |
40+ | 22.18 грн |
IRFL4315TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BSS123NH6433XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
On-state resistance: 10Ω
Drain current: 0.15A
Drain-source voltage: 100V
Power dissipation: 0.5W
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
Case: SOT23
On-state resistance: 10Ω
Drain current: 0.15A
Drain-source voltage: 100V
Power dissipation: 0.5W
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Type of transistor: N-MOSFET
на замовлення 3815 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.98 грн |
27+ | 13.94 грн |
56+ | 6.74 грн |
100+ | 5.48 грн |
250+ | 4.35 грн |
294+ | 3 грн |
806+ | 2.83 грн |
IRF5803TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 27.44 грн |
50+ | 18.58 грн |
84+ | 10.57 грн |
230+ | 9.97 грн |
IPB60R160C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
2EDF7275FXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
товар відсутній
IPA60R160C6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R060P7 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R080P7 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R099C7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Pulsed drain current: 83A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Pulsed drain current: 83A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R099P7 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R125C6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R125CPXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R125P6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R160P6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R165CPXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R170CFD7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R180P7SXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R180P7XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPA60R190C6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R190E6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R190P6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 145.25 грн |
4+ | 120.64 грн |
8+ | 116.89 грн |
10+ | 112.4 грн |
21+ | 110.15 грн |
IPA60R199CPXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPA60R230P6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 331 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 159.6 грн |
9+ | 105.65 грн |
23+ | 100.41 грн |
IR2213SPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
товар відсутній
IPB60R190C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPI60R190C6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 18 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 265.48 грн |
3+ | 211.3 грн |
6+ | 158.1 грн |
16+ | 149.11 грн |
IPP60R190C6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 318.74 грн |
3+ | 261.51 грн |
4+ | 227.04 грн |
10+ | 226.29 грн |
11+ | 214.3 грн |
IPW60R190C6FKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 229.17 грн |
3+ | 188.08 грн |
6+ | 162.6 грн |
15+ | 153.61 грн |
PVDZ172NPBF |
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVDZ172NPbF
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...60V DC
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVDZ172NPbF
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...60V DC
Mounting: THT
на замовлення 35 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 965.91 грн |
3+ | 434.6 грн |
6+ | 410.62 грн |
IMW65R048M1HXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IMW120R045M1XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247
товар відсутній
AIMW120R045M1XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 130A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 130A
Case: TO247
товар відсутній
FS10R12VT3BOMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
товар відсутній
IPP50R380CEXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
TT142N14KOF |
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IRS21867SPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 403.47 грн |
IRS21867STRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
на замовлення 2028 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 167.84 грн |
5+ | 138.62 грн |
8+ | 119.89 грн |
21+ | 113.15 грн |
500+ | 108.65 грн |
IRFB5615PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 108.13 грн |
10+ | 74.93 грн |
17+ | 54.7 грн |
45+ | 51.7 грн |
2EDF7175FXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
товар відсутній
2EDL05N06PFXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
на замовлення 1462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 109.74 грн |
5+ | 90.67 грн |
12+ | 77.93 грн |
31+ | 74.18 грн |
500+ | 71.18 грн |
2EDL05N06PJXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
товар відсутній