Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2293 з 2324
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IPAN70R450P7SXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP Power dissipation: 22.7W Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: CoolMOS™ P7 Gate charge: 13.1nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhanced Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 0.45Ω |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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IRS2186SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
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IRFB4510PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 62A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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IRGS6B60KDPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRGS6B60KDTRLP | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: reel Features of semiconductor devices: integrated anti-parallel diode |
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| ICL8810XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V Protection: anti-overvoltage OVP; over current OCP; overheating OTP Output current: -125...250mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: funkcja Soft-Start Kind of integrated circuit: LED controller; PFC controller; SMPS controller Topology: flyback Mounting: SMD Case: PG-DSO-8 Operating voltage: 8.1...23V |
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| ICL8820XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED controller; PFC controller; SMPS controller Case: PG-DSO-8 Output current: -125...250mA Number of channels: 1 Integrated circuit features: funkcja Soft-Start Mounting: SMD Operating voltage: 8.1...23V Protection: anti-overvoltage OVP; over current OCP; overheating OTP |
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IPB039N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 160A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar |
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| IRFH7004TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 164A Pulsed drain current: 1247A Power dissipation: 156W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced |
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BSP295H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223 Mounting: SMD On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Case: SOT223 Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 1.8A |
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BSP296NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223 Mounting: SMD On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Case: SOT223 Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 1.2A |
на замовлення 1093 шт: термін постачання 21-30 дні (днів) |
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BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223 Mounting: SMD Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 200V Drain current: 0.66A On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar |
на замовлення 1002 шт: термін постачання 21-30 дні (днів) |
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| IRFR7440TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 125A Pulsed drain current: 760A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhanced |
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IRFU5305PBF | INFINEON TECHNOLOGIES |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: IPAK Mounting: THT Kind of channel: enhanced |
на замовлення 2092 шт: термін постачання 21-30 дні (днів) |
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| IAUC90N10S5N062ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Pulsed drain current: 360A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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IHW30N110R3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3 Mounting: THT Case: TO247-3 Turn-off time: 470ns Type of transistor: IGBT Power dissipation: 166W Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 180nC Technology: TRENCHSTOP™ Collector-emitter voltage: 1.1kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 90A |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IHW30N65R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 88W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 153nC Kind of package: tube Turn-off time: 228ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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| XMC1201Q040F0200ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH Case: PG-VQFN-40 Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 200kB FLASH Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO |
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XMC1201T038F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Case: PG-TSSOP-38 Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 |
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XMC4800F100K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1.5MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144F2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144K1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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XMC4800F144K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH Operating temperature: -40...125°C Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 26 Kind of architecture: Cortex M4 Memory: 128kB SRAM; 1.5MB FLASH Case: PG-LQFP-144 Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Number of inputs/outputs: 119 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog |
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XMC4800F144K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 |
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IPB083N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Kind of channel: enhanced |
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FF450R12ME4EB11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Topology: IGBT x2; NTC thermistor Pulsed collector current: 900A Application: for UPS; Inverter; motors; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Case: AG-ECONOD-6 Gate-emitter voltage: ±20V Collector current: 450A Technology: EconoDUAL™ 3 Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BSC066N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of channel: enhanced |
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BSC076N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPB026N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced |
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XMC4500E144F1024ACXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-144; 352kBSRAM,1MBFLASH Case: PG-LFBGA-144 Operating temperature: -40...85°C Number of inputs/outputs: 91 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 352kB SRAM; 1MB FLASH Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB |
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XMC4500E144X1024ACXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LFBGA-144; 200kBSRAM,1MBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-144 Memory: 200kB SRAM; 1MB FLASH Number of inputs/outputs: 91 Number of 16bit timers: 26 Supply voltage: 3.3V DC Operating temperature: -40...105°C Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4500 |
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XMC4500F100F1024ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 160kB SRAM; 1MB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...85°C Number of inputs/outputs: 55 Family: XMC4500 Number of A/D channels: 18 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4500F144F1024ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 160kB SRAM; 1MB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-144 Operating temperature: -40...85°C Number of inputs/outputs: 91 Family: XMC4500 Number of A/D channels: 26 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4500F144K1024ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 160kB SRAM; 1MB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-144 Operating temperature: -40...125°C Number of inputs/outputs: 91 Family: XMC4500 Number of A/D channels: 26 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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IRFH5406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFB7540PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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IRFS7540TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced Trade name: StrongIRFET |
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XMC4108F64K64ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...125°C Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Case: PG-LQFP-64 Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog |
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XMC4108Q48K64ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...125°C Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Case: PG-VQFN-48 Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog |
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BSZ042N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced |
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IPI032N06N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Kind of channel: enhanced |
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IPP052N06L3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain current: 80A On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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IRF7501TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Power dissipation: 1.2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7506TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.7A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7507TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 2.4/-1A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±12V On-state resistance: 0.135/0.27Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7509TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.7/-2A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.11/0.2Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB020N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
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IPB020N10N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
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IPT020N10N3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 212A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 156nC Kind of package: tape Kind of channel: enhanced |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Collector-emitter voltage: 40V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Mounting: SMD Case: SOT363 Frequency: 300MHz |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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DD260N16K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 260A Case: BG-PB50-1 Max. forward voltage: 1.32V Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw |
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DD260N18K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 260A; BG-PB50-1; screw Max. off-state voltage: 1.8kV Load current: 260A Case: BG-PB50-1 Max. forward impulse current: 9.5kA Semiconductor structure: double series Mechanical mounting: screw Max. forward voltage: 1.32V Electrical mounting: screw Type of module: diode |
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ND260N14K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.4kV; If: 260A; BG-PB50ND-1; screw Max. off-state voltage: 1.4kV Load current: 260A Case: BG-PB50ND-1 Max. forward impulse current: 9.5kA Semiconductor structure: single diode Mechanical mounting: screw Max. forward voltage: 1.2V Electrical mounting: screw Type of module: diode |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| SAK-TC1797-384F150E | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC Type of integrated circuit: microcontroller Case: BGA416 Memory: 3MB FLASH Mounting: SMD Supply voltage: 3.5...5V DC Interface: I2C; SPI; UART |
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XMC1100Q024F0008ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100 Supply voltage: 1.8...5.5V DC Interface: GPIO Operating temperature: -40...85°C Memory: 8kB FLASH; 16kB SRAM Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of inputs/outputs: 22 Number of A/D channels: 8 Kind of architecture: Cortex M0 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Family: XMC1100 Number of 16bit timers: 4 |
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XMC1100Q024F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100Q024F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
товар відсутній |
| IPAN70R450P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP
Power dissipation: 22.7W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: CoolMOS™ P7
Gate charge: 13.1nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 0.45Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP
Power dissipation: 22.7W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: CoolMOS™ P7
Gate charge: 13.1nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 0.45Ω
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.69 грн |
| 6+ | 64.44 грн |
| 10+ | 56.95 грн |
| 18+ | 50.95 грн |
| 47+ | 47.96 грн |
| IRS2186SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
товар відсутній
| IRFB4510PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.87 грн |
| 10+ | 76.43 грн |
| 18+ | 51.7 грн |
| 47+ | 48.7 грн |
| IRGS6B60KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRGS6B60KDTRLP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| ICL8810XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Output current: -125...250mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 8.1...23V
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Output current: -125...250mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 8.1...23V
товар відсутній
| ICL8820XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товар відсутній
| IPB039N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
товар відсутній
| IRFH7004TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Pulsed drain current: 1247A
Power dissipation: 156W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Pulsed drain current: 1247A
Power dissipation: 156W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSP295H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 1.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 1.8A
товар відсутній
| BSP296NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.2A
на замовлення 1093 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.4 грн |
| 12+ | 33.72 грн |
| 25+ | 26.6 грн |
| 39+ | 22.85 грн |
| 100+ | 22.7 грн |
| 106+ | 21.58 грн |
| 1000+ | 21.13 грн |
| BSP297H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 200V
Drain current: 0.66A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 200V
Drain current: 0.66A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.91 грн |
| 10+ | 46.91 грн |
| 25+ | 40.69 грн |
| 38+ | 23.23 грн |
| 105+ | 21.95 грн |
| 1000+ | 21.88 грн |
| IRFR7440TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFU5305PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
на замовлення 2092 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.4 грн |
| 10+ | 55.45 грн |
| 19+ | 47.21 грн |
| 51+ | 44.96 грн |
| 150+ | 43.46 грн |
| IAUC90N10S5N062ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IHW30N110R3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 470ns
Type of transistor: IGBT
Power dissipation: 166W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 180nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.1kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 470ns
Type of transistor: IGBT
Power dissipation: 166W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 180nC
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.1kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 340.53 грн |
| 3+ | 278.74 грн |
| IHW30N65R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 88W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Turn-off time: 228ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 88W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Turn-off time: 228ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| XMC1201Q040F0200ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 200kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 200kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
товар відсутній
| XMC1201T038F0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
товар відсутній
| XMC4800F100K2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144F1024AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144F1536AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144F2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144K1024AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| XMC4800F144K1536AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
товар відсутній
| XMC4800F144K2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
товар відсутній
| IPB083N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| FF450R12ME4EB11BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2; NTC thermistor
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Case: AG-ECONOD-6
Gate-emitter voltage: ±20V
Collector current: 450A
Technology: EconoDUAL™ 3
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2; NTC thermistor
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Case: AG-ECONOD-6
Gate-emitter voltage: ±20V
Collector current: 450A
Technology: EconoDUAL™ 3
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12930.48 грн |
| BSC066N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC076N06NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB026N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| XMC4500E144F1024ACXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 352kBSRAM,1MBFLASH
Case: PG-LFBGA-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 352kB SRAM; 1MB FLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 352kBSRAM,1MBFLASH
Case: PG-LFBGA-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 352kB SRAM; 1MB FLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
товар відсутній
| XMC4500E144X1024ACXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 200kBSRAM,1MBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 91
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...105°C
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-144; 200kBSRAM,1MBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 91
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Operating temperature: -40...105°C
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
товар відсутній
| XMC4500F100F1024ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4500F144F1024ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4500F144K1024ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...125°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 1MB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...125°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| IRFH5406TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFB7540PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.01 грн |
| 10+ | 58.15 грн |
| 23+ | 39.11 грн |
| IRFS7540TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
товар відсутній
| XMC4108F64K64ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товар відсутній
| XMC4108Q48K64ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товар відсутній
| BSZ042N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPI032N06N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP052N06L3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.69 грн |
| 10+ | 91.42 грн |
| 15+ | 60.69 грн |
| 40+ | 57.7 грн |
| IRF7501TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7506TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7507TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.4/-1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.135/0.27Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.4/-1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.135/0.27Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7509TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11/0.2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11/0.2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB020N10N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB020N10N5LF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPT020N10N3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| SMBT3904SH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Frequency: 300MHz
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.1 грн |
| 100+ | 4.17 грн |
| DD260N16K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DD260N18K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 260A; BG-PB50-1; screw
Max. off-state voltage: 1.8kV
Load current: 260A
Case: BG-PB50-1
Max. forward impulse current: 9.5kA
Semiconductor structure: double series
Mechanical mounting: screw
Max. forward voltage: 1.32V
Electrical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 260A; BG-PB50-1; screw
Max. off-state voltage: 1.8kV
Load current: 260A
Case: BG-PB50-1
Max. forward impulse current: 9.5kA
Semiconductor structure: double series
Mechanical mounting: screw
Max. forward voltage: 1.32V
Electrical mounting: screw
Type of module: diode
товар відсутній
| ND260N14K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.4kV; If: 260A; BG-PB50ND-1; screw
Max. off-state voltage: 1.4kV
Load current: 260A
Case: BG-PB50ND-1
Max. forward impulse current: 9.5kA
Semiconductor structure: single diode
Mechanical mounting: screw
Max. forward voltage: 1.2V
Electrical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; single diode; 1.4kV; If: 260A; BG-PB50ND-1; screw
Max. off-state voltage: 1.4kV
Load current: 260A
Case: BG-PB50ND-1
Max. forward impulse current: 9.5kA
Semiconductor structure: single diode
Mechanical mounting: screw
Max. forward voltage: 1.2V
Electrical mounting: screw
Type of module: diode
товар відсутній
| TT260N22KOFHOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| SAK-TC1797-384F150E |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
товар відсутній
| XMC1100Q024F0008ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Supply voltage: 1.8...5.5V DC
Interface: GPIO
Operating temperature: -40...85°C
Memory: 8kB FLASH; 16kB SRAM
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of inputs/outputs: 22
Number of A/D channels: 8
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Family: XMC1100
Number of 16bit timers: 4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Supply voltage: 1.8...5.5V DC
Interface: GPIO
Operating temperature: -40...85°C
Memory: 8kB FLASH; 16kB SRAM
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of inputs/outputs: 22
Number of A/D channels: 8
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Family: XMC1100
Number of 16bit timers: 4
товар відсутній
| XMC1100Q024F0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100Q024F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній