Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2294 з 2324
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XMC1100Q024F0064ABXUMA1 | INFINEON TECHNOLOGIES |
 Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100Q040F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0008ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100 Supply voltage: 1.8...5.5V DC Interface: GPIO Operating temperature: -40...85°C Memory: 8kB FLASH; 16kB SRAM Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of inputs/outputs: 14 Number of A/D channels: 6 Kind of architecture: Cortex M0 Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Family: XMC1100 Number of 16bit timers: 4 |
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XMC1100T016F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Case: PG-TSSOP-38 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Case: PG-TSSOP-38 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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| XMC1202Q024X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-24 Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 |
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| XMC1202Q040X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-40 Number of inputs/outputs: 26 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 |
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BTS723GW | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.9...4.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 53mΩ Supply voltage: 7...58V DC Technology: Classic PROFET |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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| IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhanced |
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IRG7PH44K10D-EPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRG7PH46UD-EP | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 57A Power dissipation: 390W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 0.32µC Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
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IRFR2307ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK Power dissipation: 110W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK Drain-source voltage: 75V Drain current: 53A Type of transistor: N-MOSFET |
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IDW15G120C5BFKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3 Type of diode: Schottky rectifying Mounting: THT Case: PG-TO247-3 Kind of package: tube Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Leakage current: 8µA Power dissipation: 200W |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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IDW20G120C5BFKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 180A Leakage current: 12µA Max. off-state voltage: 1.2kV Power dissipation: 250W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.4V |
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IDW20G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 46A Leakage current: 2µA Max. off-state voltage: 650V Power dissipation: 130W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V |
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| IPD50P03P4L11ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W Drain-source voltage: -30V Drain current: -42A On-state resistance: 10.5mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Case: PG-TO252-3-11 Mounting: SMD Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -5...16V Pulsed drain current: -200A |
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| IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: -16...5V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhanced |
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IPD50R399CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R399CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel Kind of channel: enhanced |
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IPD50R520CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R520CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced |
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IPD50R950CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.3A Power dissipation: 34W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Kind of channel: enhanced |
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TD120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V Case: BG-SB20-1 Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Max. off-state voltage: 1.6kV Max. load current: 190A Max. forward voltage: 1.75V Load current: 120A Semiconductor structure: double series Gate current: 100mA Max. forward impulse current: 2.25kA |
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TT120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 120A; BG-SB20-1; screw Max. off-state voltage: 1.6kV Load current: 120A Max. forward impulse current: 2.25kA Electrical mounting: FASTON connectors; screw Case: BG-SB20-1 Mechanical mounting: screw Max. forward voltage: 1.75V Gate current: 100mA Semiconductor structure: double series Type of module: thyristor |
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IR2114SSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24 Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SSOP24 Output current: -1.5...1A Power: 1.5W Number of channels: 2 Supply voltage: 10.4...20V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 0.6/1.2kV Turn-on time: 440ns Turn-off time: 440ns |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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IPU50R1K4CEBKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK Case: IPAK Mounting: THT Kind of package: tube On-state resistance: 1.4Ω Drain current: 3.1A Drain-source voltage: 500V Technology: CoolMOS™ CE Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V Power dissipation: 25W Polarisation: unipolar |
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IAUS165N08S5N029ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V |
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IAUT165N08S5N029ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V |
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FS75R06KE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Application: Inverter Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 2 Topology: IGBT half-bridge x2; NTC thermistor Case: AG-ECONO2-6 |
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| IPD60R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced |
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BTS3110N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SOT223-4 On-state resistance: 0.2Ω Technology: HITFET®; SIPMOS™ Operating temperature: -40...150°C Output voltage: 42V Turn-on time: 45µs Turn-off time: 60µs |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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IRFR3709ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR3709ZTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPT004N03LATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 300W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: tape Kind of channel: enhanced |
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IPD053N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3 Power dissipation: 83W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: 60V Drain current: 45A On-state resistance: 5.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IPD30N08S222ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 21.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
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| IPD90N06S407ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Pulsed drain current: 360A Power dissipation: 79W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
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IPB090N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced |
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| DDB6U104N16RRBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W Case: AG-ECONO2B Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 350W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoBRIDGE™ |
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| DDB6U134N16RRBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W Case: AG-ECONO2B Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 70A Pulsed collector current: 150A Power dissipation: 500W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoBRIDGE™ |
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FF100R12RT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Pulsed collector current: 200A Power dissipation: 555W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-34MM Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
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IDH09G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 9A; 82W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 9A Power dissipation: 82W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...137mm Max. forward impulse current: 65A Max. forward voltage: 1.8V Leakage current: 1.8µA |
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IPA60R400CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.3A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 276 шт: термін постачання 21-30 дні (днів) |
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BTS5120-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14 Mounting: SMD Supply voltage: 8...18V DC Kind of output: N-Channel Technology: PROFET™+ 12V Kind of integrated circuit: high-side Case: SO14 On-state resistance: 0.22Ω Output current: 2A Type of integrated circuit: power switch Number of channels: 2 |
на замовлення 1959 шт: термін постачання 21-30 дні (днів) |
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IRS2301SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Power: 625mW Case: SO8 Mounting: SMD Kind of package: tube Turn-on time: 330ns Turn-off time: 250ns Output current: -350...200mA Operating temperature: -40...125°C Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 5...20V DC Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side |
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IPB80N04S2H4ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 103nC Kind of channel: enhanced |
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IPP80N04S4L04AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IAUC80N04S6L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
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IPB031N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhanced |
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IPA057N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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IPB057N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.7mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 45A Power dissipation: 83W Polarisation: unipolar Drain-source voltage: 60V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ |
товар відсутній |
| XMC1100Q024F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100Q040F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0008ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Supply voltage: 1.8...5.5V DC
Interface: GPIO
Operating temperature: -40...85°C
Memory: 8kB FLASH; 16kB SRAM
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of inputs/outputs: 14
Number of A/D channels: 6
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Family: XMC1100
Number of 16bit timers: 4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Supply voltage: 1.8...5.5V DC
Interface: GPIO
Operating temperature: -40...85°C
Memory: 8kB FLASH; 16kB SRAM
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of inputs/outputs: 14
Number of A/D channels: 6
Kind of architecture: Cortex M0
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Family: XMC1100
Number of 16bit timers: 4
товар відсутній
| XMC1100T016F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016F0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016X0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T016X0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T038F0016ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T038F0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1100T038X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
товар відсутній
| XMC1202Q024X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
товар відсутній
| XMC1202Q040X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
товар відсутній
| BTS723GW |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 376.04 грн |
| 4+ | 278.74 грн |
| 9+ | 263.01 грн |
| IPD35N10S3L26ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRG7PH44K10D-EPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRG7PH46UD-EP |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 57A
Power dissipation: 390W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 57A; 390W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 57A
Power dissipation: 390W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFR2307ZTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 75V
Drain current: 53A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 75V
Drain current: 53A
Type of transistor: N-MOSFET
товар відсутній
| IDW15G120C5BFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO247-3
Kind of package: tube
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO247-3
Kind of package: tube
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 601.98 грн |
| IDW20G120C5BFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 180A
Leakage current: 12µA
Max. off-state voltage: 1.2kV
Power dissipation: 250W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.4V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 180A
Leakage current: 12µA
Max. off-state voltage: 1.2kV
Power dissipation: 250W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.4V
товар відсутній
| IDW20G65C5BXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 46A
Leakage current: 2µA
Max. off-state voltage: 650V
Power dissipation: 130W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 46A
Leakage current: 2µA
Max. off-state voltage: 650V
Power dissipation: 130W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
товар відсутній
| IPD50P03P4L11ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
товар відсутній
| IPD50P04P413ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50P04P4L11ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
товар відсутній
| IPD50R399CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R399CPBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R500CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPD50R520CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R520CPBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD50R950CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TD120N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
товар відсутній
| TT120N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 120A; BG-SB20-1; screw
Max. off-state voltage: 1.6kV
Load current: 120A
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Case: BG-SB20-1
Mechanical mounting: screw
Max. forward voltage: 1.75V
Gate current: 100mA
Semiconductor structure: double series
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 120A; BG-SB20-1; screw
Max. off-state voltage: 1.6kV
Load current: 120A
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Case: BG-SB20-1
Mechanical mounting: screw
Max. forward voltage: 1.75V
Gate current: 100mA
Semiconductor structure: double series
Type of module: thyristor
товар відсутній
| IR2114SSPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 697.2 грн |
| 2+ | 496.04 грн |
| 3+ | 495.29 грн |
| 5+ | 468.32 грн |
| IPU50R1K4CEBKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
On-state resistance: 1.4Ω
Drain current: 3.1A
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Power dissipation: 25W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
On-state resistance: 1.4Ω
Drain current: 3.1A
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Power dissipation: 25W
Polarisation: unipolar
товар відсутній
| IAUS165N08S5N029ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 660A
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 660A
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IAUT165N08S5N029ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| FS75R06KE3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Application: Inverter
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO2-6
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Application: Inverter
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO2-6
товар відсутній
| IPD60R380C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BTS3110N |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.2Ω
Technology: HITFET®; SIPMOS™
Operating temperature: -40...150°C
Output voltage: 42V
Turn-on time: 45µs
Turn-off time: 60µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.2Ω
Technology: HITFET®; SIPMOS™
Operating temperature: -40...150°C
Output voltage: 42V
Turn-on time: 45µs
Turn-off time: 60µs
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 87.96 грн |
| 6+ | 72.68 грн |
| 14+ | 63.69 грн |
| 38+ | 59.94 грн |
| IRFR3709ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFR3709ZTRRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPT004N03LATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| IPD053N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPD30N08S222ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
товар відсутній
| IPD90N06S407ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPB090N06N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| DDB6U104N16RRBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
товар відсутній
| DDB6U134N16RRBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
товар відсутній
| FF100R12RT4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 555W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-34MM
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 555W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-34MM
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
товар відсутній
| IDH09G65C5 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 9A; 82W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 9A
Power dissipation: 82W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 65A
Max. forward voltage: 1.8V
Leakage current: 1.8µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 9A; 82W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 9A
Power dissipation: 82W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 65A
Max. forward voltage: 1.8V
Leakage current: 1.8µA
товар відсутній
| IPA60R400CEXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 276 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.65 грн |
| 10+ | 89.17 грн |
| 28+ | 83.92 грн |
| 50+ | 80.92 грн |
| BTS5120-2EKA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 8...18V DC
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 0.22Ω
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 8...18V DC
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 0.22Ω
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
на замовлення 1959 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.36 грн |
| 10+ | 92.91 грн |
| 13+ | 71.93 грн |
| 34+ | 68.19 грн |
| 1000+ | 65.94 грн |
| IRS2301SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 330ns
Turn-off time: 250ns
Output current: -350...200mA
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 330ns
Turn-off time: 250ns
Output current: -350...200mA
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
товар відсутній
| IPB80N04S2H4ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
товар відсутній
| IPP80N04S4L04AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IAUC80N04S6L032ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUA180N04S5N012AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPB031N08N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPA057N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 166.23 грн |
| 10+ | 121.39 грн |
| 12+ | 77.18 грн |
| 32+ | 72.68 грн |
| IPB057N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3
Kind of channel: enhanced
On-state resistance: 5.7mΩ
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain current: 45A
Power dissipation: 83W
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3
Kind of channel: enhanced
On-state resistance: 5.7mΩ
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain current: 45A
Power dissipation: 83W
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™
товар відсутній