Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2284 з 2324
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IRFH5301TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5302TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5304TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR3710ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 1710 шт: термін постачання 21-30 дні (днів) |
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IPB200N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 120V Drain current: 45A Power dissipation: 78W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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AIHD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 26ns Turn-off time: 319ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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AIHD15N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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| IRF200B211 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 34A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced |
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IRF200P222 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 129A Power dissipation: 556W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhanced |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IRF200P223 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 71A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IRF2204PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Power dissipation: 330W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 133 шт: термін постачання 21-30 дні (днів) |
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| DZ1070N22K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw Type of module: diode Electrical mounting: screw Mechanical mounting: screw Case: BG-PB70AT-1 Max. off-state voltage: 2.2kV Max. forward voltage: 0.75V Load current: 1.07kA Semiconductor structure: single diode Max. forward impulse current: 41kA |
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| DZ1070N26K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw Type of module: diode Electrical mounting: screw Mechanical mounting: screw Case: BG-PB70AT-1 Max. off-state voltage: 2.6kV Max. forward voltage: 0.75V Load current: 1.07kA Semiconductor structure: single diode Max. forward impulse current: 41kA |
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| DZ1070N28K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw Type of module: diode Electrical mounting: screw Mechanical mounting: screw Case: BG-PB70AT-1 Max. off-state voltage: 2.8kV Max. forward voltage: 0.75V Load current: 1.07kA Semiconductor structure: single diode Max. forward impulse current: 41kA |
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AUIRF7640S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 30W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7647S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Power dissipation: 41W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7648M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Power dissipation: 63W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7665S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 14.4A Power dissipation: 30W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7669L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Power dissipation: 100W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7675M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 45W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7736M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Kind of package: reel Drain-source voltage: 40V Drain current: 108A Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
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AUIRF7737L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 156A Power dissipation: 83W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7739L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRL7732S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Power dissipation: 41W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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AUIRL7736M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 112A Power dissipation: 63W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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AUIRL7766M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Power dissipation: 62.5W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRF6613TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6617TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6618TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6620TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 27A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6623TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET Kind of package: reel Drain-source voltage: 20V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
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IRF6636TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 18A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6641TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.6A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6643TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 6.2A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 6.2A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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IPN80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223 Power dissipation: 7W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 10nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V Drain current: 2.7A On-state resistance: 1.4Ω Type of transistor: N-MOSFET |
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BTS4142N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.15Ω Supply voltage: 12...45V DC Technology: Classic PROFET |
на замовлення 1495 шт: термін постачання 21-30 дні (днів) |
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IHW30N135R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Turn-off time: 680ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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| BGSX24MU16E6327XUSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz Type of integrated circuit: RF switch Mounting: SMD Case: ULGA16-1 Supply voltage: 1.65...3.4V DC Application: telecommunication Interface: MIPI Bandwidth: 0.1...5GHz Output configuration: DP4T |
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| BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Type of integrated circuit: RF switch Number of channels: 4 Mounting: SMD Case: ATSLP-9-3 Supply voltage: 1.65...1.95V DC Application: telecommunication Interface: MIPI Bandwidth: 0.05...6GHz Output configuration: SP4T |
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BSP762T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 70mΩ Technology: Classic PROFET Output voltage: 40V |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BSP76E6433 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SOT223-4 Technology: HITFET® Output voltage: 42V |
на замовлення 4055 шт: термін постачання 21-30 дні (днів) |
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IPB027N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced |
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IPB027N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced |
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IRLR3636TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Power dissipation: 143W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 1864 шт: термін постачання 21-30 дні (днів) |
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IRF1018EPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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IRF7420TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -11.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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ITS4142N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Mounting: SMD Supply voltage: 12...45V DC Number of channels: 1 Case: SOT223 Operating temperature: -30...85°C Kind of package: reel; tape Output current: 0.7A Kind of output: N-Channel Turn-off time: 0.1ms Power dissipation: 1.4W Technology: Industrial PROFET On-state resistance: 0.2Ω Turn-on time: 150µs |
на замовлення 3863 шт: термін постачання 21-30 дні (днів) |
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ITS716G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20 Mounting: SMD Supply voltage: 5.5...40V DC Output current: 2.3A Type of integrated circuit: power switch Number of channels: 4 Kind of output: N-Channel Technology: Industrial PROFET Kind of integrated circuit: high-side Case: SO20 On-state resistance: 0.11Ω |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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ITS5215L | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Technology: Industrial PROFET Mounting: SMD Case: BSOP12 Kind of integrated circuit: high-side Supply voltage: 5.5...40V DC On-state resistance: 70mΩ Output current: 3.7A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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BTS3405G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET® Mounting: SMD Kind of output: N-Channel Technology: HITFET® Kind of integrated circuit: low-side Case: PG-DSO-8-25 On-state resistance: 0.35Ω Output voltage: 10V Output current: 0.35A Type of integrated circuit: power switch Number of channels: 2 |
на замовлення 2237 шт: термін постачання 21-30 дні (днів) |
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BTS6163D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD Supply voltage: 5.5...62V DC On-state resistance: 20mΩ Output current: 5.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Mounting: SMD Case: PG-TO252-5-11 |
на замовлення 2687 шт: термін постачання 21-30 дні (днів) |
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BSP78 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V |
товар відсутній |
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BSP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Technology: Classic PROFET Output voltage: 52V |
на замовлення 327 шт: термін постачання 21-30 дні (днів) |
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BSP772T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
на замовлення 1962 шт: термін постачання 21-30 дні (днів) |
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BTS441RG | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Technology: Classic PROFET Output voltage: 4.75...43V |
товар відсутній |
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BTS5210L | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.8A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: BSOP12 On-state resistance: 0.11Ω Supply voltage: 5.5...40V DC Technology: Classic PROFET |
на замовлення 679 шт: термін постачання 21-30 дні (днів) |
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BTS716GXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20 Mounting: SMD Kind of output: N-Channel Power dissipation: 3.6W Technology: Classic PROFET Kind of integrated circuit: high-side Case: SO20 Supply voltage: 5.5...40V DC On-state resistance: 35mΩ Turn-on time: 270µs Turn-off time: 0.25ms Output current: 2.6...5.3A Type of integrated circuit: power switch Number of channels: 4 |
на замовлення 525 шт: термін постачання 21-30 дні (днів) |
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BTS4175SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.175Ω Supply voltage: 6...52V DC Technology: Classic PROFET |
товар відсутній |
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BTS5016SDA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 16mΩ Technology: High Current PROFET |
товар відсутній |
| IRFH5301TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5302TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5304TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFR3710ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1710 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.9 грн |
| 17+ | 52.45 грн |
| 46+ | 49.45 грн |
| 1000+ | 47.96 грн |
| IPB200N15N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 45A
Power dissipation: 78W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 45A
Power dissipation: 78W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| SPA15N60C3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.12 грн |
| 6+ | 158.85 грн |
| AIHD15N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| AIHD15N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| IRF200B211 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 34A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 34A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF200P222 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 129A
Power dissipation: 556W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 129A
Power dissipation: 556W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 614.89 грн |
| 2+ | 447.34 грн |
| 6+ | 422.61 грн |
| IRF200P223 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 404.28 грн |
| 3+ | 292.98 грн |
| IRF2204PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.06 грн |
| 11+ | 84.67 грн |
| 29+ | 80.18 грн |
| DZ1070N22K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB70AT-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB70AT-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
товар відсутній
| DZ1070N26K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB70AT-1
Max. off-state voltage: 2.6kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB70AT-1
Max. off-state voltage: 2.6kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
товар відсутній
| DZ1070N28K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB70AT-1
Max. off-state voltage: 2.8kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB70AT-1
Max. off-state voltage: 2.8kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
товар відсутній
| AUIRF7640S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7647S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7648M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7665S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7669L2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Power dissipation: 100W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Power dissipation: 100W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7675M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 45W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 45W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7736M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Kind of package: reel
Drain-source voltage: 40V
Drain current: 108A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Kind of package: reel
Drain-source voltage: 40V
Drain current: 108A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
товар відсутній
| AUIRF7737L2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Power dissipation: 83W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Power dissipation: 83W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7739L2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRL7732S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| AUIRL7736M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| AUIRL7766M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRF6613TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6617TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6618TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6620TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 27A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 27A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6623TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Kind of package: reel
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Kind of package: reel
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
товар відсутній
| IRF6636TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 18A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 18A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6641TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6643TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 6.2A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 6.2A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 6.2A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 6.2A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPN80R1K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223
Power dissipation: 7W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223
Power dissipation: 7W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
товар відсутній
| BTS4142N |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.15Ω
Supply voltage: 12...45V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.15Ω
Supply voltage: 12...45V DC
Technology: Classic PROFET
на замовлення 1495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.99 грн |
| 5+ | 113.15 грн |
| 9+ | 98.16 грн |
| 25+ | 92.91 грн |
| 500+ | 91.42 грн |
| IHW30N135R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.33 грн |
| 5+ | 182.83 грн |
| 14+ | 173.09 грн |
| 30+ | 170.09 грн |
| 60+ | 165.6 грн |
| BGSX24MU16E6327XUSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.1...5GHz
Output configuration: DP4T
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.1...5GHz
Output configuration: DP4T
товар відсутній
| BGS14MPA9E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.05...6GHz
Output configuration: SP4T
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.05...6GHz
Output configuration: SP4T
товар відсутній
| BSP762T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.69 грн |
| 5+ | 134.88 грн |
| 10+ | 92.91 грн |
| 26+ | 87.67 грн |
| 2500+ | 84.67 грн |
| BSP76E6433 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
Technology: HITFET®
Output voltage: 42V
на замовлення 4055 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.18 грн |
| 13+ | 68.94 грн |
| 35+ | 65.19 грн |
| IPB027N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB027N10N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRLR3636TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1864 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.41 грн |
| 6+ | 70.43 грн |
| 23+ | 39.71 грн |
| 61+ | 37.47 грн |
| IRF1018EPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.52 грн |
| 10+ | 50.2 грн |
| 29+ | 30.27 грн |
| 80+ | 28.7 грн |
| IRF7420TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| ITS4142N |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 12...45V DC
Number of channels: 1
Case: SOT223
Operating temperature: -30...85°C
Kind of package: reel; tape
Output current: 0.7A
Kind of output: N-Channel
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
On-state resistance: 0.2Ω
Turn-on time: 150µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 12...45V DC
Number of channels: 1
Case: SOT223
Operating temperature: -30...85°C
Kind of package: reel; tape
Output current: 0.7A
Kind of output: N-Channel
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
On-state resistance: 0.2Ω
Turn-on time: 150µs
на замовлення 3863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.66 грн |
| 10+ | 102.65 грн |
| 12+ | 78.68 грн |
| 25+ | 77.93 грн |
| 31+ | 74.18 грн |
| 1000+ | 73.43 грн |
| ITS716G |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Mounting: SMD
Supply voltage: 5.5...40V DC
Output current: 2.3A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Case: SO20
On-state resistance: 0.11Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Mounting: SMD
Supply voltage: 5.5...40V DC
Output current: 2.3A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Case: SO20
On-state resistance: 0.11Ω
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 367.16 грн |
| 5+ | 176.84 грн |
| 14+ | 167.84 грн |
| 50+ | 167.1 грн |
| ITS5215L |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Technology: Industrial PROFET
Mounting: SMD
Case: BSOP12
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Technology: Industrial PROFET
Mounting: SMD
Case: BSOP12
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.89 грн |
| 3+ | 202.31 грн |
| 6+ | 154.36 грн |
| 16+ | 146.11 грн |
| 250+ | 142.37 грн |
| BTS3405G |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Mounting: SMD
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Output voltage: 10V
Output current: 0.35A
Type of integrated circuit: power switch
Number of channels: 2
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Mounting: SMD
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Output voltage: 10V
Output current: 0.35A
Type of integrated circuit: power switch
Number of channels: 2
на замовлення 2237 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 83.92 грн |
| 11+ | 80.18 грн |
| 25+ | 73.43 грн |
| BTS6163D |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Supply voltage: 5.5...62V DC
On-state resistance: 20mΩ
Output current: 5.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: PG-TO252-5-11
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Supply voltage: 5.5...62V DC
On-state resistance: 20mΩ
Output current: 5.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: PG-TO252-5-11
на замовлення 2687 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 321.97 грн |
| 5+ | 212.05 грн |
| 12+ | 200.81 грн |
| 500+ | 197.82 грн |
| 1000+ | 193.32 грн |
| BSP78 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
товар відсутній
| BSP752R |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
на замовлення 327 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.16 грн |
| 10+ | 88.42 грн |
| 28+ | 83.92 грн |
| BSP772T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
на замовлення 1962 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.62 грн |
| 5+ | 137.12 грн |
| 8+ | 117.64 грн |
| 21+ | 111.65 грн |
| BTS441RG |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
товар відсутній
| BTS5210L |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
на замовлення 679 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.91 грн |
| 5+ | 182.08 грн |
| 6+ | 158.1 грн |
| 16+ | 149.86 грн |
| BTS716GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Mounting: SMD
Kind of output: N-Channel
Power dissipation: 3.6W
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Turn-off time: 0.25ms
Output current: 2.6...5.3A
Type of integrated circuit: power switch
Number of channels: 4
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Mounting: SMD
Kind of output: N-Channel
Power dissipation: 3.6W
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Turn-off time: 0.25ms
Output current: 2.6...5.3A
Type of integrated circuit: power switch
Number of channels: 4
на замовлення 525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 326.01 грн |
| 5+ | 176.09 грн |
| 14+ | 166.35 грн |
| BTS4175SGA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
товар відсутній
| BTS5016SDA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
товар відсутній