Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6100) > Сторінка 101 з 102
Фото | Назва | Виробник | Інформація |
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MUR560J | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.35V Max. forward impulse current: 130A Kind of package: reel; tape |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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BYV30-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; SOD59,TO220AC Mounting: THT Case: SOD59; TO220AC Kind of package: tube Max. forward impulse current: 290A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 0.98V Load current: 30A Semiconductor structure: single diode |
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BYV30W-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2 Mounting: THT Case: TO247-2 Kind of package: tube Max. forward impulse current: 290A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 0.98V Load current: 30A Semiconductor structure: single diode |
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BYV30W-600PT2Q | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2 Mounting: THT Case: TO247-2 Kind of package: tube Max. forward impulse current: 290A Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 0.98V Load current: 30A Semiconductor structure: single diode |
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BYV40W-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 40A; tube; Ifsm: 290A; TO247-2 Max. off-state voltage: 0.6kV Max. forward voltage: 0.97V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 290A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: THT Case: TO247-2 |
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BYC15-1200PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2V Reverse recovery time: 61ns |
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BYC15M-650PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: SOD59; TO220AC Max. forward voltage: 2.3V Reverse recovery time: 14ns |
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BYC15X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
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WNS40H100CBJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 380A |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
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WNS40H100CGQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V |
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WNS40H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 380A Max. forward voltage: 0.68V |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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ACTT8-800CTNQ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; TO220AB; THT; tube Max. off-state voltage: 0.8kV Case: TO220AB Kind of package: tube Max. load current: 8A Mounting: THT Type of thyristor: AC switch Gate current: 35mA |
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ACTT4S-800C,118 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 35mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
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ACTT6B-800CNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 35mA; D2PAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape |
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ACTT6B-800E,118 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: D2PAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 835 шт: термін постачання 21-30 дні (днів) |
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ACTT6G-800E,127 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: I2PAK Gate current: 10mA Mounting: THT Kind of package: tube |
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ACTT8B-800CTNJ | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; D2PAK; SMD Max. off-state voltage: 0.8kV Case: D2PAK Kind of package: reel; tape Max. load current: 8A Mounting: SMD Type of thyristor: AC switch Gate current: 35mA |
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BT139-800E.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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WNSC2D10650BJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Max. forward voltage: 2.2V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A |
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WNSC2D10650DJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A |
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WNSC2D10650TJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 50A |
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WNSC2D10650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A |
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WNSC6D10650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 80A |
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WNSC6D10650Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 75A |
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MUR320J | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 160A Case: SMC |
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BYV5ED-600PJ | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward impulse current: 70A Kind of package: reel; tape |
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BYV40E-150,115 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 150V; 750mAx2; 25ns; SOT223; Ufmax: 1V Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 150V Max. load current: 1.5A Max. forward voltage: 1V Load current: 750mA x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 6.6A |
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BYV415W-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3 Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1.1V Case: TO247-3 Max. load current: 30A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Load current: 15A x2 Max. off-state voltage: 0.6kV |
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BYV430W-300PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 1V Case: TO247-3 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward impulse current: 330A Reverse recovery time: 50ns Load current: 15A x2 Max. off-state voltage: 300V |
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BYV430W-600PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns Type of diode: rectifying Mounting: THT Kind of package: tube Max. forward voltage: 2V Case: TO247-3 Max. load current: 60A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 180A Reverse recovery time: 90ns Load current: 30A x2 Max. off-state voltage: 0.6kV |
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BYQ28X-200,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 55A Max. load current: 10A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Mounting: THT Load current: 5A x2 |
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BT139-800.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYT28-300,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 55A Max. load current: 10A Max. off-state voltage: 300V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 1.4V Mounting: THT Load current: 5A x2 |
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BT136-800E.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYC30B-600PJ | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 300A Case: D2PAK; SOT404 Max. forward voltage: 2.75V Reverse recovery time: 35ns |
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BT137S-600D.118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD |
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WNSC04650T6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 24A |
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NXPSC046506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Mounting: THT Kind of package: tube Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A Type of diode: Schottky rectifying |
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NXPSC04650B | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: D2PAK Max. off-state voltage: 650V Max. load current: 8A Max. forward voltage: 1.5V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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NXPSC04650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Mounting: SMD Kind of package: reel; tape Technology: SiC Case: D2PAK Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A Type of diode: Schottky rectifying |
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NXPSC04650D6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Mounting: SMD Kind of package: reel; tape Technology: SiC Case: DPAK Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A Type of diode: Schottky rectifying |
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NXPSC04650X6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Kind of package: tube Technology: SiC Case: TO220FP-2 Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 24A Type of diode: Schottky rectifying |
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WNSC2D04650DJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 24A |
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WNSC2D04650Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A Max. forward voltage: 2.2V |
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WNSC2D04650TJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 24A |
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WNSC2D04650XQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 20A |
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WNSC5D046506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 28A Max. forward voltage: 2.2V |
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WNSC5D04650D6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 26A Max. forward voltage: 2.2V |
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WNSC6D046506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 36A Max. forward voltage: 1.55V |
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WNSC6D04650Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 30A |
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WNS20H100CBJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 0.7V |
на замовлення 810 шт: термін постачання 21-30 дні (днів) |
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WNS20H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 0.7V |
на замовлення 468 шт: термін постачання 21-30 дні (днів) |
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BT137X-600.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
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BYV25D-600,118 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 66A Case: DPAK Max. forward voltage: 1.11V Reverse recovery time: 50ns |
товар відсутній |
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WNSC201200WQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.4V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 220A Kind of package: tube |
товар відсутній |
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WNSC2D08650DJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A |
товар відсутній |
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WNSC2D08650TJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 48A Load current: 8A |
товар відсутній |
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WNSC2D101200WQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.88V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 72A Kind of package: tube |
товар відсутній |
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WNSC2D401200CWQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 125A Kind of package: tube |
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WNSC2D401200W6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Mounting: THT Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 80A Max. forward voltage: 2.5V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 350A Kind of package: tube |
товар відсутній |
MUR560J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 18.16 грн |
26+ | 14.11 грн |
BYV30-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; SOD59,TO220AC
Mounting: THT
Case: SOD59; TO220AC
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
товар відсутній
BYV30W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
товар відсутній
BYV30W-600PT2Q |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 290A; TO247-2
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 290A
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.98V
Load current: 30A
Semiconductor structure: single diode
товар відсутній
BYV40W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; tube; Ifsm: 290A; TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.97V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 290A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; tube; Ifsm: 290A; TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 0.97V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 290A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
товар відсутній
BYC15-1200PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 61ns
товар відсутній
BYC15M-650PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; Ifsm: 180A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Max. forward voltage: 2.3V
Reverse recovery time: 14ns
товар відсутній
BYC15X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
товар відсутній
WNS40H100CBJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 380A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 380A
на замовлення 430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 60.8 грн |
8+ | 50.81 грн |
23+ | 38.41 грн |
62+ | 36.33 грн |
WNS40H100CGQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
товар відсутній
WNS40H100CQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 380A
Max. forward voltage: 0.68V
на замовлення 970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 72 грн |
7+ | 60.17 грн |
20+ | 43.83 грн |
54+ | 41.6 грн |
ACTT8-800CTNQ |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; TO220AB; THT; tube
Max. off-state voltage: 0.8kV
Case: TO220AB
Kind of package: tube
Max. load current: 8A
Mounting: THT
Type of thyristor: AC switch
Gate current: 35mA
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; TO220AB; THT; tube
Max. off-state voltage: 0.8kV
Case: TO220AB
Kind of package: tube
Max. load current: 8A
Mounting: THT
Type of thyristor: AC switch
Gate current: 35mA
товар відсутній
ACTT4S-800C,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
товар відсутній
ACTT6B-800CNJ |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 35mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
товар відсутній
ACTT6B-800E,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; D2PAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 835 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 56 грн |
10+ | 39.37 грн |
25+ | 34.91 грн |
30+ | 28.6 грн |
83+ | 27.04 грн |
ACTT6G-800E,127 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
товар відсутній
ACTT8B-800CTNJ |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; D2PAK; SMD
Max. off-state voltage: 0.8kV
Case: D2PAK
Kind of package: reel; tape
Max. load current: 8A
Mounting: SMD
Type of thyristor: AC switch
Gate current: 35mA
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 8A; Igt: 35mA; D2PAK; SMD
Max. off-state voltage: 0.8kV
Case: D2PAK
Kind of package: reel; tape
Max. load current: 8A
Mounting: SMD
Type of thyristor: AC switch
Gate current: 35mA
товар відсутній
BT139-800E.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
WNSC2D10650BJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
WNSC2D10650DJ |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
WNSC2D10650TJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
WNSC2D10650XQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 50A
товар відсутній
WNSC6D10650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 80A
товар відсутній
WNSC6D10650Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 75A
товар відсутній
MUR320J |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; Ifsm: 160A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 160A
Case: SMC
товар відсутній
BYV5ED-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward impulse current: 70A
Kind of package: reel; tape
товар відсутній
BYV40E-150,115 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 750mAx2; 25ns; SOT223; Ufmax: 1V
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 150V
Max. load current: 1.5A
Max. forward voltage: 1V
Load current: 750mA x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 6.6A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 750mAx2; 25ns; SOT223; Ufmax: 1V
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 150V
Max. load current: 1.5A
Max. forward voltage: 1V
Load current: 750mA x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 6.6A
товар відсутній
BYV415W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Load current: 15A x2
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 150A; TO247-3
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Load current: 15A x2
Max. off-state voltage: 0.6kV
товар відсутній
BYV430W-300PQ |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Reverse recovery time: 50ns
Load current: 15A x2
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 330A; TO247-3; 50ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 1V
Case: TO247-3
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Reverse recovery time: 50ns
Load current: 15A x2
Max. off-state voltage: 300V
товар відсутній
BYV430W-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Reverse recovery time: 90ns
Load current: 30A x2
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 180A; TO247-3; 90ns
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Max. forward voltage: 2V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Reverse recovery time: 90ns
Load current: 30A x2
Max. off-state voltage: 0.6kV
товар відсутній
BYQ28X-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Mounting: THT
Load current: 5A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Mounting: THT
Load current: 5A x2
товар відсутній
BT139-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYT28-300,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 300V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 55A
Max. load current: 10A
Max. off-state voltage: 300V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 1.4V
Mounting: THT
Load current: 5A x2
товар відсутній
BT136-800E.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYC30B-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 300A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 300A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
товар відсутній
BT137S-600D.118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
товар відсутній
WNSC04650T6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
товар відсутній
NXPSC046506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO220AC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO220AC
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
товар відсутній
NXPSC04650B |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 62.4 грн |
NXPSC04650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Technology: SiC
Case: D2PAK
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Technology: SiC
Case: D2PAK
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
товар відсутній
NXPSC04650D6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Technology: SiC
Case: DPAK
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Technology: SiC
Case: DPAK
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
товар відсутній
NXPSC04650X6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO220FP-2
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO220FP-2
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Type of diode: Schottky rectifying
товар відсутній
WNSC2D04650DJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 24A
товар відсутній
WNSC2D04650Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
товар відсутній
WNSC2D04650TJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Kind of package: reel; tape
Max. forward impulse current: 24A
товар відсутній
WNSC2D04650XQ |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 20A
товар відсутній
WNSC5D046506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 28A
Max. forward voltage: 2.2V
товар відсутній
WNSC5D04650D6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 26A
Max. forward voltage: 2.2V
товар відсутній
WNSC6D046506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.55V
товар відсутній
WNSC6D04650Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 30A
товар відсутній
WNS20H100CBJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.7V
на замовлення 810 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 58.4 грн |
13+ | 29.27 грн |
25+ | 25.85 грн |
39+ | 22.43 грн |
106+ | 21.17 грн |
WNS20H100CQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 0.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 0.7V
на замовлення 468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.8 грн |
15+ | 26.15 грн |
25+ | 23.03 грн |
42+ | 20.95 грн |
100+ | 20.65 грн |
114+ | 19.76 грн |
250+ | 19.24 грн |
BT137X-600.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYV25D-600,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
товар відсутній
WNSC201200WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.4V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Kind of package: tube
товар відсутній
WNSC2D08650DJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
товар відсутній
WNSC2D08650TJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8N; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Max. forward impulse current: 48A
Load current: 8A
товар відсутній
WNSC2D101200WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.88V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.88V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 72A
Kind of package: tube
товар відсутній
WNSC2D401200CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 125A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 125A
Kind of package: tube
товар відсутній
WNSC2D401200W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 80A
Max. forward voltage: 2.5V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 350A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Mounting: THT
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 80A
Max. forward voltage: 2.5V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 350A
Kind of package: tube
товар відсутній