Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6219) > Сторінка 96 з 104
Фото | Назва | Виробник | Інформація |
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BTA316-600D,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature; sensitive gate Gate current: 5mA Type of thyristor: triac Max. forward impulse current: 140A Max. load current: 16A |
на замовлення 780 шт: термін постачання 21-30 дні (днів) |
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BTA316-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Type of thyristor: triac Case: TO220AB Max. off-state voltage: 0.6kV Max. load current: 16A Gate current: 10mA Max. forward impulse current: 140A Features of semiconductor devices: high temperature; sensitive gate |
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BTA316-600ET,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature; sensitive gate Gate current: 10mA Type of thyristor: triac Max. forward impulse current: 140A Max. load current: 16A |
на замовлення 888 шт: термін постачання 21-30 дні (днів) |
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BTA316-600ET/DGQ | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 150A; 3Q,Hi-Com Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Type of thyristor: triac Case: TO220AB Max. off-state voltage: 0.6kV Max. load current: 16A Gate current: 10mA Max. forward impulse current: 150A Features of semiconductor devices: high temperature |
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BTA316B-600B,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Mounting: SMD Kind of package: reel; tape Technology: 3Q; Hi-Com Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.6kV Max. load current: 16A Gate current: 50mA Max. forward impulse current: 140A Features of semiconductor devices: sensitive gate |
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BTA316B-600C,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.6kV Features of semiconductor devices: sensitive gate Gate current: 35mA Type of thyristor: triac Max. forward impulse current: 140A Max. load current: 16A |
на замовлення 739 шт: термін постачання 21-30 дні (днів) |
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BTA316B-600CTJ | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com Mounting: SMD Kind of package: reel; tape Technology: 3Q; Hi-Com Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.6kV Max. load current: 16A Gate current: 35mA Max. forward impulse current: 150A Features of semiconductor devices: high temperature |
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BTA316B-600E,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.6kV Features of semiconductor devices: sensitive gate Gate current: 10mA Type of thyristor: triac Max. forward impulse current: 140A Max. load current: 16A |
на замовлення 768 шт: термін постачання 21-30 дні (днів) |
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BTA316B-800B,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Mounting: SMD Kind of package: reel; tape Technology: 3Q; Hi-Com Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.8kV Max. load current: 16A Gate current: 50mA Max. forward impulse current: 140A Features of semiconductor devices: sensitive gate |
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BTA316B-800C,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Gate current: 35mA Type of thyristor: triac Max. forward impulse current: 140A Max. load current: 16A |
на замовлення 593 шт: термін постачання 21-30 дні (днів) |
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BTA316B-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Mounting: SMD Kind of package: reel; tape Technology: 3Q; Hi-Com Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.8kV Max. load current: 16A Gate current: 10mA Max. forward impulse current: 140A Features of semiconductor devices: sensitive gate |
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BT150-500R,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 35A Turn-on time: 2µs |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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BT155K-1200TQ | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1259; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 483 шт: термін постачання 21-30 дні (днів) |
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SMBJ26AJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 29.12...31.67V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
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BT151X-500C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 100A Turn-on time: 2µs |
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BT151X-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
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BTA216-600BT,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 150A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
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BTA216-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA216-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA216-600F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 25mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BYW29E-100,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.895V Reverse recovery time: 25ns |
на замовлення 752 шт: термін постачання 21-30 дні (днів) |
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BYW29E-150,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.8V Heatsink thickness: 1.15...1.4mm Reverse recovery time: 25ns |
на замовлення 994 шт: термін постачання 21-30 дні (днів) |
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BYW29E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.8V Heatsink thickness: 1.15...1.4mm Reverse recovery time: 25ns |
на замовлення 1443 шт: термін постачання 21-30 дні (днів) |
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BYW29ED-200,118 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A Mounting: SMD Case: DPAK Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 200V Max. forward voltage: 0.8V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 80A |
на замовлення 1581 шт: термін постачання 21-30 дні (днів) |
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BYW29EX-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD113; TO220FP-2 Max. forward voltage: 0.8V Reverse recovery time: 25ns |
на замовлення 471 шт: термін постачання 21-30 дні (днів) |
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BYV410-600,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 132A |
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BYC10B-600,118 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 71A Case: D2PAK; SOT404 Max. forward voltage: 1.4V Reverse recovery time: 55ns |
на замовлення 587 шт: термін постачання 21-30 дні (днів) |
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MURS360BJ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.88V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 5999 шт: термін постачання 21-30 дні (днів) |
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NXPSC206506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 100A Kind of package: tube |
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NXPSC20650W-AQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.1V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube Application: automotive industry |
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NXPSC20650W6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube |
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WNSC2D20650CJQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube |
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WNSC2D20650CWQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube |
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WNSC5D20650X6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. load current: 40A Max. forward impulse current: 80A Kind of package: tube |
на замовлення 998 шт: термін постачання 21-30 дні (днів) |
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WNSC6D20650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 120A Kind of package: reel; tape |
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WNSC6D20650WQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 155A Kind of package: tube |
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NXPLQSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 48A Kind of package: tube |
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BTA212-800B,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 4865 шт: термін постачання 21-30 дні (днів) |
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BTA312-800B,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 810 шт: термін постачання 21-30 дні (днів) |
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BTA312-800C,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312-800CT,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1923 шт: термін постачання 21-30 дні (днів) |
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BTA312-800E,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312-800ET,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA212B-800B,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 634 шт: термін постачання 21-30 дні (днів) |
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BTA212B-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 693 шт: термін постачання 21-30 дні (днів) |
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BTA212X-800B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 962 шт: термін постачання 21-30 дні (днів) |
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BTA212X-800E,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA312B-800B,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 760 шт: термін постачання 21-30 дні (днів) |
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BTA312B-800C,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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BTA312B-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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BTA312B-800ET,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 471 шт: термін постачання 21-30 дні (днів) |
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BTA312X-800B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 421 шт: термін постачання 21-30 дні (днів) |
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BYV72EW-200,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns Semiconductor structure: common cathode; double Reverse recovery time: 28ns Max. forward impulse current: 185A Max. load current: 30A Max. off-state voltage: 200V Kind of package: tube Type of diode: rectifying Case: TO247-3 Max. forward voltage: 1.2V Mounting: THT Load current: 15A x2 |
на замовлення 226 шт: термін постачання 21-30 дні (днів) |
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BUJ302A,127 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 4A Power dissipation: 80W Case: TO220AB Current gain: 25...50 Mounting: THT Kind of package: tube |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
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BUJ302AD,118 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 4A Power dissipation: 80W Case: DPAK Current gain: 25...50 Mounting: SMD Kind of package: reel; tape |
на замовлення 1579 шт: термін постачання 21-30 дні (днів) |
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BUJ302AX,127 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 4A Power dissipation: 26W Case: TO220FP Current gain: 25...50 Mounting: THT Kind of package: tube |
товар відсутній |
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BTA225B-800B,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1023 шт: термін постачання 21-30 дні (днів) |
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BTA225B-800BTJ | WeEn Semiconductors |
![]() Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товар відсутній |
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NCR100Q-6MX | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 100uA; SOT89; SMD; Ifsm: 9A Mounting: SMD Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT89 Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.51A Gate current: 100µA Max. forward impulse current: 9A |
товар відсутній |
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NCR100W-10LX | WeEn Semiconductors |
![]() Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A Mounting: SMD Max. off-state voltage: 850V Max. load current: 1.1A Load current: 0.8A Gate current: 50µA Max. forward impulse current: 11A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 |
товар відсутній |
BTA316-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 5mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 5mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
на замовлення 780 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.68 грн |
25+ | 34.78 грн |
29+ | 30.16 грн |
78+ | 28.55 грн |
BTA316-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 10mA
Max. forward impulse current: 140A
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 10mA
Max. forward impulse current: 140A
Features of semiconductor devices: high temperature; sensitive gate
товар відсутній
BTA316-600ET,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
на замовлення 888 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.62 грн |
10+ | 42.1 грн |
27+ | 32.21 грн |
73+ | 30.46 грн |
500+ | 29.29 грн |
BTA316-600ET/DGQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 150A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 10mA
Max. forward impulse current: 150A
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 150A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 10mA
Max. forward impulse current: 150A
Features of semiconductor devices: high temperature
товар відсутній
BTA316B-600B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Max. forward impulse current: 140A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 50mA
Max. forward impulse current: 140A
Features of semiconductor devices: sensitive gate
товар відсутній
BTA316B-600C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Gate current: 35mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Gate current: 35mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
на замовлення 739 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.92 грн |
8+ | 50.08 грн |
22+ | 40.05 грн |
59+ | 37.85 грн |
400+ | 36.46 грн |
BTA316B-600CTJ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 150A
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 150A
Features of semiconductor devices: high temperature
товар відсутній
BTA316B-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
на замовлення 768 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 72.54 грн |
10+ | 54.91 грн |
22+ | 40.05 грн |
59+ | 37.85 грн |
500+ | 37.49 грн |
BTA316B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 50mA
Max. forward impulse current: 140A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 50mA
Max. forward impulse current: 140A
Features of semiconductor devices: sensitive gate
товар відсутній
BTA316B-800C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Gate current: 35mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Gate current: 35mA
Type of thyristor: triac
Max. forward impulse current: 140A
Max. load current: 16A
на замовлення 593 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 58.35 грн |
8+ | 48.03 грн |
21+ | 41.44 грн |
57+ | 39.1 грн |
500+ | 37.63 грн |
BTA316B-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 10mA
Max. forward impulse current: 140A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Mounting: SMD
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 10mA
Max. forward impulse current: 140A
Features of semiconductor devices: sensitive gate
товар відсутній
BT150-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 35A
Turn-on time: 2µs
на замовлення 900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
17+ | 21.67 грн |
25+ | 17.5 грн |
57+ | 15.23 грн |
155+ | 14.42 грн |
BT155K-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 483 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 156.9 грн |
5+ | 128.86 грн |
8+ | 112.02 грн |
21+ | 105.43 грн |
450+ | 101.77 грн |
SMBJ26AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товар відсутній
BT151X-500C,127 |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
товар відсутній
BT151X-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
товар відсутній
BTA216-600BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216-600F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYW29E-100,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
на замовлення 752 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
13+ | 29.14 грн |
25+ | 25.77 грн |
36+ | 23.36 грн |
100+ | 22.04 грн |
250+ | 21.52 грн |
BYW29E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
на замовлення 994 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
12+ | 30.6 грн |
25+ | 27.82 грн |
39+ | 21.67 грн |
107+ | 20.5 грн |
500+ | 20.43 грн |
BYW29E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
на замовлення 1443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 54.4 грн |
12+ | 31.92 грн |
25+ | 25.77 грн |
37+ | 23.06 грн |
100+ | 22.99 грн |
101+ | 21.82 грн |
500+ | 20.94 грн |
BYW29ED-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Max. forward voltage: 0.8V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 80A
на замовлення 1581 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 61.5 грн |
11+ | 35.44 грн |
42+ | 20.5 грн |
115+ | 19.33 грн |
BYW29EX-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
на замовлення 471 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
15+ | 25.77 грн |
25+ | 20.87 грн |
45+ | 18.82 грн |
123+ | 17.79 грн |
BYV410-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 132A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 132A
товар відсутній
BYC10B-600,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
на замовлення 587 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 60.71 грн |
9+ | 43.05 грн |
25+ | 34.78 грн |
27+ | 31.7 грн |
74+ | 29.94 грн |
MURS360BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 5999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 17.9 грн |
39+ | 9.44 грн |
100+ | 8.35 грн |
113+ | 7.61 грн |
310+ | 7.18 грн |
3000+ | 7.03 грн |
NXPSC206506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
товар відсутній
NXPSC20650W-AQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
товар відсутній
NXPSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
товар відсутній
WNSC2D20650CJQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
товар відсутній
WNSC2D20650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
товар відсутній
WNSC5D20650X6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. load current: 40A
Max. forward impulse current: 80A
Kind of package: tube
на замовлення 998 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 165.58 грн |
5+ | 137.64 грн |
9+ | 105.43 грн |
23+ | 99.57 грн |
WNSC6D20650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 120A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 120A
Kind of package: reel; tape
товар відсутній
WNSC6D20650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
товар відсутній
NXPLQSC20650W6Q |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
товар відсутній
BTA212-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 4865 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.98 грн |
9+ | 42.46 грн |
10+ | 38.14 грн |
28+ | 31.63 грн |
75+ | 29.87 грн |
BTA312-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 810 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.83 грн |
9+ | 45.39 грн |
25+ | 40.78 грн |
27+ | 32.73 грн |
72+ | 30.97 грн |
BTA312-800C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA312-800CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
9+ | 42.24 грн |
10+ | 37.12 грн |
26+ | 33.46 грн |
30+ | 33.39 грн |
71+ | 31.63 грн |
100+ | 31.19 грн |
BTA312-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA312-800ET,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA212B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 634 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
9+ | 41 грн |
25+ | 34.92 грн |
68+ | 33.02 грн |
100+ | 32.73 грн |
BTA212B-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 693 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.68 грн |
25+ | 34.78 грн |
26+ | 33.75 грн |
70+ | 31.92 грн |
100+ | 31.34 грн |
BTA212X-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 962 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.68 грн |
25+ | 34.78 грн |
29+ | 30.02 грн |
78+ | 28.55 грн |
BTA212X-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA312B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.77 грн |
8+ | 47.3 грн |
22+ | 39.46 грн |
60+ | 37.34 грн |
BTA312B-800C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.77 грн |
8+ | 47.37 грн |
10+ | 41.81 грн |
22+ | 39.39 грн |
30+ | 37.56 грн |
60+ | 37.27 грн |
100+ | 35.8 грн |
BTA312B-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 136 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 54.4 грн |
10+ | 37.92 грн |
25+ | 34.19 грн |
31+ | 28.19 грн |
84+ | 26.65 грн |
BTA312B-800ET,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 471 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.68 грн |
25+ | 35.44 грн |
29+ | 30.31 грн |
78+ | 28.7 грн |
BTA312X-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 421 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 51.25 грн |
9+ | 40.78 грн |
11+ | 35.95 грн |
27+ | 32.51 грн |
30+ | 32.36 грн |
73+ | 30.75 грн |
100+ | 30.16 грн |
BYV72EW-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Max. load current: 30A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. forward voltage: 1.2V
Mounting: THT
Load current: 15A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Max. load current: 30A
Max. off-state voltage: 200V
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. forward voltage: 1.2V
Mounting: THT
Load current: 15A x2
на замовлення 226 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 76.14 грн |
16+ | 54.91 грн |
43+ | 51.98 грн |
BUJ302A,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: TO220AB
Current gain: 25...50
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: TO220AB
Current gain: 25...50
Mounting: THT
Kind of package: tube
на замовлення 641 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
11+ | 35.14 грн |
13+ | 28.41 грн |
30+ | 25.55 грн |
41+ | 20.94 грн |
112+ | 19.77 грн |
BUJ302AD,118 |
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Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Current gain: 25...50
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 80W
Case: DPAK
Current gain: 25...50
Mounting: SMD
Kind of package: reel; tape
на замовлення 1579 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 35.48 грн |
16+ | 23.58 грн |
44+ | 19.77 грн |
119+ | 18.67 грн |
400+ | 18.6 грн |
500+ | 18.3 грн |
BUJ302AX,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 26W
Case: TO220FP
Current gain: 25...50
Mounting: THT
Kind of package: tube
товар відсутній
BTA225B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1023 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 104.08 грн |
17+ | 50.52 грн |
47+ | 47.59 грн |
BTA225B-800BTJ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
NCR100Q-6MX |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT89
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 800mA; 510mA; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Mounting: SMD
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT89
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Max. forward impulse current: 9A
товар відсутній
NCR100W-10LX |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A
Mounting: SMD
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; Ifsm: 11A
Mounting: SMD
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
товар відсутній