Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6219) > Сторінка 97 з 104
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NCR100W-12LX | WeEn Semiconductors |
![]() Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Max. off-state voltage: 1kV Max. load current: 1.1A Load current: 0.8A Gate current: 50µA Max. forward impulse current: 11A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Case: SOT223 |
товар відсутній |
||||||||||||||
![]() |
BTA312-600D,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com Mounting: THT Kind of package: tube Case: TO220AB Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 5mA Max. forward impulse current: 100A |
товар відсутній |
|||||||||||||
![]() |
BTA312-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Mounting: THT Kind of package: tube Case: TO220AB Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 10mA Max. forward impulse current: 100A |
товар відсутній |
|||||||||||||
![]() |
ESDAHD712BE2X | WeEn Semiconductors |
![]() Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 19A Peak pulse power dissipation: 0.5kW Semiconductor structure: asymmetric; bidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 7...12V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Manufacturer series: HD |
товар відсутній |
|||||||||||||
BYV32E-200PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns |
товар відсутній |
||||||||||||||
![]() |
BT258-800R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 2828 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA216B-600B,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товар відсутній |
|||||||||||||
![]() |
BTA216B-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA216B-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товар відсутній |
|||||||||||||
![]() |
BTA216B-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 25mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товар відсутній |
|||||||||||||
![]() |
BTA216B-800B,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA216X-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 929 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA216X-600D,127 | WeEn Semiconductors |
![]() ![]() ![]() Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
![]() |
BTA216X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
![]() |
BTA216X-600F,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 25mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
![]() |
BTA216X-800B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 804 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
BTA216X-800B/L02Q | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 150A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
||||||||||||||
![]() |
BTA310X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 600V Features of semiconductor devices: sensitive gate Gate current: 10mA Type of thyristor: triac Max. load current: 10A Max. forward impulse current: 85A |
товар відсутній |
|||||||||||||
SMBJ33AJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.98...40.3V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товар відсутній |
||||||||||||||
BTA212B-600B,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Mounting: SMD Case: D2PAK Max. load current: 12A Max. off-state voltage: 0.6kV Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 50mA Max. forward impulse current: 95A |
товар відсутній |
||||||||||||||
BTA212B-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товар відсутній |
||||||||||||||
![]() |
BTA212B-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Max. off-state voltage: 0.6kV Case: D2PAK Mounting: SMD Max. load current: 12A Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate Kind of package: reel; tape Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 10mA |
на замовлення 668 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
BTA212B-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товар відсутній |
||||||||||||||
BTA212X-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Mounting: THT Case: TO220FP Max. load current: 12A Max. off-state voltage: 0.6kV Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 50mA Max. forward impulse current: 95A |
товар відсутній |
||||||||||||||
![]() |
BTA212X-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Max. off-state voltage: 0.6kV Case: TO220FP Mounting: THT Max. load current: 12A Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate Kind of package: tube Technology: 3Q; Hi-Com Type of thyristor: triac Gate current: 5mA |
на замовлення 881 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
BTA212X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
||||||||||||||
BTA212X-600F,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
||||||||||||||
![]() |
BT137S-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Technology: 4Q Case: DPAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate Gate current: 10/25mA Type of thyristor: triac Max. forward impulse current: 65A Max. load current: 8A |
на замовлення 1867 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BYV44-500,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1.15V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
на замовлення 237 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BYV34-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.48V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 12A |
товар відсутній |
|||||||||||||
![]() |
MAC223A6,127 | WeEn Semiconductors |
![]() Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 25A Gate current: 50/75mA Max. forward impulse current: 190A |
на замовлення 938 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
MAC223A8X,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 50/75mA Max. forward impulse current: 190A |
на замовлення 803 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA204W-800E,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3728 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA204X-800E,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
![]() |
BYT79-500,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 130A Case: SOD59; TO220AC Max. forward voltage: 0.9V |
на замовлення 589 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BT137S-600G,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2410 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
P4SOD58AX | WeEn Semiconductors |
![]() Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SOD |
товар відсутній |
|||||||||||||
![]() |
BT138X-800F,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
![]() |
BUJ100,126 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2W Case: TO92 Current gain: 9...20 Mounting: THT Kind of package: Ammo Pack |
товар відсутній |
|||||||||||||
![]() |
BUJ100,412 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2W Case: TO92 Current gain: 9...20 Mounting: THT Kind of package: bulk |
товар відсутній |
|||||||||||||
![]() |
BUJ100LR,412 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2.1W Case: TO92 Current gain: 5...20 Mounting: THT Kind of package: bulk |
на замовлення 4827 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BT136X-600F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товар відсутній |
|||||||||||||
![]() |
SMAJ30CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.55...36.54V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
товар відсутній |
|||||||||||||
![]() |
BYC5X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2 Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 2.2V Load current: 5A Semiconductor structure: single diode Case: SOD113; TO220FP-2 Mounting: THT Max. forward impulse current: 44A Kind of package: tube Reverse recovery time: 30ns |
товар відсутній |
|||||||||||||
![]() |
BYC5X-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2 Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 2.1V Load current: 5A Max. load current: 10A Semiconductor structure: single diode Case: SOD113; TO220FP-2 Mounting: THT Features of semiconductor devices: ultrafast switching Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 11ns |
на замовлення 875 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BYC8DX-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 55A Case: SOD113; TO220FP-2 Max. forward voltage: 1.5V Reverse recovery time: 20ns |
товар відсутній |
|||||||||||||
![]() |
WNS30H100CBJ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: D2PAK Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 |
на замовлення 288 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
WNS30H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.67V Max. load current: 30A Max. off-state voltage: 100V Case: TO220AB Semiconductor structure: common cathode; double Max. forward impulse current: 330A Load current: 15A x2 |
на замовлення 1271 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BT155W-1200TQ | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 438 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BTA425Z-800BTQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: SOT1292; TO3P Gate current: 50mA Max. forward impulse current: 250A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 174 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
BTA425Z-800CTQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Technology: 3Q; Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate Gate current: 35mA Type of thyristor: triac Max. load current: 25A Max. forward impulse current: 250A |
товар відсутній |
||||||||||||||
BTA445Z-800BTQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Kind of package: tube Technology: 3Q; Hi-Com Type of thyristor: triac Mounting: THT Case: SOT1292; TO3P Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Max. forward impulse current: 495A Features of semiconductor devices: high temperature |
товар відсутній |
||||||||||||||
WNSC2M1K0170WQ | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
WNSC2M20120R6Q | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 94A Pulsed drain current: 200A Power dissipation: 750W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |
||||||||||||||
WNSC2M40120R6Q | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 100A Power dissipation: 405W Case: TO247-4 Gate-source voltage: -12...22V On-state resistance: 55mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |
||||||||||||||
![]() |
BYV32E-100,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A Max. load current: 20A Max. off-state voltage: 100V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 0.85V Mounting: THT Load current: 10A x2 |
на замовлення 391 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BYV32E-150,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A Max. load current: 20A Max. off-state voltage: 150V Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB Max. forward voltage: 0.85V Mounting: THT Load current: 10A x2 |
на замовлення 916 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BYV32E-300PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOT78; TO220AB Max. forward voltage: 1.25V Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
товар відсутній |
|||||||||||||
![]() |
BYV32EB-200,118 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A Mounting: SMD Max. load current: 20A Max. forward voltage: 0.72V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 137A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. off-state voltage: 200V |
на замовлення 1544 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
![]() |
BYV32EB-200PJ | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. forward impulse current: 125A Kind of package: reel; tape |
товар відсутній |
NCR100W-12LX |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 800mA; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Max. forward impulse current: 11A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Case: SOT223
товар відсутній
BTA312-600D,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 5mA
Max. forward impulse current: 100A
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 100A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 5mA
Max. forward impulse current: 100A
товар відсутній
BTA312-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 10mA
Max. forward impulse current: 100A
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 10mA
Max. forward impulse current: 100A
товар відсутній
ESDAHD712BE2X |
![]() |
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HD
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 19A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Manufacturer series: HD
товар відсутній
BYV32E-200PQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
товар відсутній
BT258-800R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 2828 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 28.62 грн |
25+ | 23.94 грн |
48+ | 18.08 грн |
131+ | 17.13 грн |
1000+ | 16.4 грн |
BTA216B-600B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 635 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 68.6 грн |
7+ | 57.84 грн |
20+ | 44.66 грн |
53+ | 41.73 грн |
BTA216B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-800B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 118 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 58.35 грн |
8+ | 48.61 грн |
23+ | 37.92 грн |
62+ | 35.88 грн |
BTA216X-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 929 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.83 грн |
9+ | 44.08 грн |
24+ | 35.8 грн |
66+ | 33.82 грн |
250+ | 32.65 грн |
BTA216X-600D,127 |
![]() ![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-800B,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 804 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
9+ | 45.25 грн |
25+ | 34.41 грн |
69+ | 32.51 грн |
500+ | 31.99 грн |
BTA216X-800B/L02Q |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA310X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 600V
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. load current: 10A
Max. forward impulse current: 85A
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 600V
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. load current: 10A
Max. forward impulse current: 85A
товар відсутній
SMBJ33AJ |
![]() |
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товар відсутній
BTA212B-600B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Mounting: SMD
Case: D2PAK
Max. load current: 12A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 95A
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Mounting: SMD
Case: D2PAK
Max. load current: 12A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 95A
товар відсутній
BTA212B-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Case: D2PAK
Mounting: SMD
Max. load current: 12A
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 10mA
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Case: D2PAK
Mounting: SMD
Max. load current: 12A
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Kind of package: reel; tape
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 10mA
на замовлення 668 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
9+ | 41 грн |
25+ | 36.17 грн |
26+ | 33.46 грн |
71+ | 31.56 грн |
BTA212B-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212X-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Max. load current: 12A
Max. off-state voltage: 0.6kV
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 95A
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Max. load current: 12A
Max. off-state voltage: 0.6kV
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 95A
товар відсутній
BTA212X-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Case: TO220FP
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 5mA
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Case: TO220FP
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Gate current: 5mA
на замовлення 881 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.62 грн |
10+ | 38.07 грн |
25+ | 33.68 грн |
29+ | 29.43 грн |
80+ | 27.82 грн |
BTA212X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA212X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BT137S-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Technology: 4Q
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Gate current: 10/25mA
Type of thyristor: triac
Max. forward impulse current: 65A
Max. load current: 8A
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Technology: 4Q
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Gate current: 10/25mA
Type of thyristor: triac
Max. forward impulse current: 65A
Max. load current: 8A
на замовлення 1867 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.83 грн |
10+ | 37.05 грн |
25+ | 25.77 грн |
53+ | 16.33 грн |
145+ | 15.45 грн |
BYV44-500,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 237 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 98.11 грн |
10+ | 85.66 грн |
18+ | 47.59 грн |
50+ | 45.39 грн |
BYV34-600,127 |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
товар відсутній
MAC223A6,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
на замовлення 938 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 82.79 грн |
7+ | 55.06 грн |
22+ | 38.66 грн |
61+ | 36.53 грн |
MAC223A8X,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
на замовлення 803 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 82 грн |
21+ | 40.93 грн |
57+ | 38.73 грн |
BTA204W-800E,135 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3728 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.26 грн |
25+ | 17.42 грн |
65+ | 13.18 грн |
178+ | 12.45 грн |
BTA204X-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYT79-500,127 |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
на замовлення 589 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.68 грн |
25+ | 32.65 грн |
29+ | 29.43 грн |
80+ | 27.82 грн |
250+ | 27.09 грн |
BT137S-600G,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2410 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 26.26 грн |
25+ | 21.96 грн |
49+ | 17.35 грн |
135+ | 16.4 грн |
P4SOD58AX |
![]() |
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
товар відсутній
BT138X-800F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BUJ100,126 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: Ammo Pack
товар відсутній
BUJ100,412 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2W
Case: TO92
Current gain: 9...20
Mounting: THT
Kind of package: bulk
товар відсутній
BUJ100LR,412 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 4827 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
39+ | 10.25 грн |
44+ | 8.35 грн |
52+ | 7.05 грн |
100+ | 5.81 грн |
209+ | 4.09 грн |
575+ | 3.87 грн |
BT136X-600F,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
SMAJ30CAJ |
![]() |
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
товар відсутній
BYC5X-600,127 |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 30ns
товар відсутній
BYC5X-600PQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 11ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 11ns
на замовлення 875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.54 грн |
25+ | 34.85 грн |
29+ | 30.16 грн |
79+ | 28.55 грн |
BYC8DX-600,127 |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
товар відсутній
WNS30H100CBJ |
![]() |
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
на замовлення 288 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.98 грн |
9+ | 43.78 грн |
25+ | 38.22 грн |
26+ | 33.17 грн |
72+ | 31.34 грн |
WNS30H100CQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
на замовлення 1271 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 52.04 грн |
10+ | 39.68 грн |
25+ | 34.78 грн |
29+ | 30.16 грн |
79+ | 28.55 грн |
BT155W-1200TQ |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 438 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 188.44 грн |
8+ | 115.68 грн |
21+ | 109.09 грн |
BTA425Z-800BTQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: SOT1292; TO3P
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: SOT1292; TO3P
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 174 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 126.15 грн |
5+ | 104.7 грн |
11+ | 80.54 грн |
29+ | 76.14 грн |
BTA425Z-800CTQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 35mA
Type of thyristor: triac
Max. load current: 25A
Max. forward impulse current: 250A
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 35mA
Type of thyristor: triac
Max. load current: 25A
Max. forward impulse current: 250A
товар відсутній
BTA445Z-800BTQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Features of semiconductor devices: high temperature
товар відсутній
WNSC2M1K0170WQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WNSC2M20120R6Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
WNSC2M40120R6Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
BYV32E-100,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 100V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 100V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
на замовлення 391 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.19 грн |
9+ | 43.2 грн |
25+ | 38.07 грн |
27+ | 31.99 грн |
74+ | 30.24 грн |
BYV32E-150,127 |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 150V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 150V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
на замовлення 916 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 55.19 грн |
9+ | 43.2 грн |
25+ | 38.07 грн |
28+ | 31.19 грн |
76+ | 29.51 грн |
BYV32E-300PQ |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
товар відсутній
BYV32EB-200,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Mounting: SMD
Max. load current: 20A
Max. forward voltage: 0.72V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Mounting: SMD
Max. load current: 20A
Max. forward voltage: 0.72V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. off-state voltage: 200V
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 70.17 грн |
10+ | 54.98 грн |
28+ | 30.6 грн |
77+ | 28.92 грн |
BYV32EB-200PJ |
![]() |
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. forward impulse current: 125A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. forward impulse current: 125A
Kind of package: reel; tape
товар відсутній