Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFI520GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.1A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI530GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.9A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI540GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1148 шт: термін постачання 14-21 дні (днів) |
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IRFI620GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI630GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 850 шт: термін постачання 14-21 дні (днів) |
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IRFI634GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI640GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.8A Pulsed drain current: 39A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 984 шт: термін постачання 14-21 дні (днів) |
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IRFI644GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 60 шт: термін постачання 14-21 дні (днів) |
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IRFI720GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI730GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.7A Pulsed drain current: 15A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI740GLCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Pulsed drain current: 23A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI740GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.4A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1570 шт: термін постачання 14-21 дні (днів) |
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IRFI820GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.3A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI830GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 156 шт: термін постачання 14-21 дні (днів) |
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IRFI840GLCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 366 шт: термін постачання 14-21 дні (днів) |
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IRFI840GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 974 шт: термін постачання 14-21 дні (днів) |
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IRFI9520GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI9530GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.4A; 42W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.4A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1113 шт: термін постачання 14-21 дні (днів) |
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IRFI9540GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -7.6A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI9610GPBF | VISHAY | IRFI9610GPBF THT P channel transistors |
товару немає в наявності |
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IRFI9620GPBF | VISHAY | IRFI9620GPBF THT P channel transistors |
товару немає в наявності |
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IRFI9630GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 590 шт: термін постачання 14-21 дні (днів) |
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IRFI9634GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.6A; 35W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 434 шт: термін постачання 14-21 дні (днів) |
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IRFI9640GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.9A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 485 шт: термін постачання 14-21 дні (днів) |
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IRFI9Z14GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI9Z24GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: 8.5A Pulsed drain current: -34A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFI9Z34GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; 42W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.5A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 992 шт: термін постачання 14-21 дні (днів) |
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IRFIB5N65APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.1A Pulsed drain current: 21A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 930mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIB6N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIB7N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 44A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 44A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIBC30GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 444 шт: термін постачання 14-21 дні (днів) |
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IRFIBC40GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 816 шт: термін постачання 14-21 дні (днів) |
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IRFIBE20GPBF | VISHAY | IRFIBE20GPBF THT N channel transistors |
товару немає в наявності |
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IRFIBE30GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 200 шт: термін постачання 14-21 дні (днів) |
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IRFIBF20GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 0.79A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 0.79A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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IRFIBF30GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.7Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIZ14GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 32A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIZ24GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIZ34GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIZ44GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFIZ48GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1344 шт: термін постачання 14-21 дні (днів) |
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IRFL014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3499 шт: термін постачання 14-21 дні (днів) |
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IRFL014TRPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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IRFL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.96A Pulsed drain current: 12A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1902 шт: термін постачання 14-21 дні (днів) |
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IRFL210TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2093 шт: термін постачання 14-21 дні (днів) |
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IRFL210TRPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 960mA; Idm: 7.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.96A Pulsed drain current: 7.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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IRFL214TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.79A; Idm: 6.3A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.79A Pulsed drain current: 6.3A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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IRFL9014TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.1A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 6972 шт: термін постачання 14-21 дні (днів) |
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IRFL9014TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.8A; Idm: -14A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.8A Pulsed drain current: -14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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IRFL9110TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.69A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4076 шт: термін постачання 14-21 дні (днів) |
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IRFL9110TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.1A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -1.1A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товару немає в наявності |
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IRFP048PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Pulsed drain current: 290A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFP048RPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Pulsed drain current: 290A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 486 шт: термін постачання 14-21 дні (днів) |
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IRFP054PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 230 шт: термін постачання 14-21 дні (днів) |
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IRFP064PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 477 шт: термін постачання 14-21 дні (днів) |
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IRFP140PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 735 шт: термін постачання 14-21 дні (днів) |
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IRFP150PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1254 шт: термін постачання 14-21 дні (днів) |
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IRFP17N50LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 64A Power dissipation: 220W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFP21N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 460 шт: термін постачання 14-21 дні (днів) |
|
IRFI520GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.1A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.1A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.1A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI530GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI540GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1148 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.46 грн |
10+ | 65.65 грн |
19+ | 55.89 грн |
51+ | 52.34 грн |
IRFI620GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.1A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.1A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI630GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 850 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.43 грн |
23+ | 47.91 грн |
62+ | 43.47 грн |
IRFI634GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI640GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.8A
Pulsed drain current: 39A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.8A; Idm: 39A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.8A
Pulsed drain current: 39A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 984 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 163.37 грн |
10+ | 114.24 грн |
15+ | 69.2 грн |
41+ | 65.65 грн |
1000+ | 62.99 грн |
IRFI644GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 214.01 грн |
12+ | 89.36 грн |
33+ | 80.73 грн |
IRFI720GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.6A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI730GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.7A; Idm: 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI740GLCPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI740GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.4A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.4A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.4A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1570 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 156.68 грн |
10+ | 63.57 грн |
22+ | 47.91 грн |
60+ | 45.24 грн |
IRFI820GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.3A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.3A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI830GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 156 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 95.54 грн |
10+ | 78.31 грн |
18+ | 57.66 грн |
49+ | 55 грн |
500+ | 54.12 грн |
IRFI840GLCPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 366 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 93.05 грн |
10+ | 78.96 грн |
16+ | 68.31 грн |
42+ | 64.76 грн |
250+ | 63.87 грн |
IRFI840GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 974 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.34 грн |
10+ | 130.82 грн |
15+ | 72.75 грн |
39+ | 69.2 грн |
IRFI9520GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI9530GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.4A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.4A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.4A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.4A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1113 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 95.54 грн |
4+ | 82.91 грн |
10+ | 70.97 грн |
17+ | 61.21 грн |
47+ | 57.66 грн |
IRFI9540GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI9630GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 590 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 69.09 грн |
10+ | 59.44 грн |
19+ | 55.89 грн |
51+ | 52.34 грн |
IRFI9634GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.6A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.6A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 434 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 165.28 грн |
10+ | 76.46 грн |
18+ | 58.55 грн |
49+ | 55 грн |
IRFI9640GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.9A; 40W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.9A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 485 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.26 грн |
10+ | 87.83 грн |
14+ | 75.41 грн |
38+ | 70.97 грн |
IRFI9Z14GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI9Z24GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFI9Z34GPBF |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; 42W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 992 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.34 грн |
5+ | 67.25 грн |
10+ | 57.31 грн |
21+ | 49.68 грн |
57+ | 47.02 грн |
IRFIB5N65APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.1A
Pulsed drain current: 21A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 930mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.1A
Pulsed drain current: 21A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 930mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIB6N60APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIB7N50APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 44A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 44A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 44A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 44A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIBC30GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 444 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.09 грн |
4+ | 91.21 грн |
10+ | 77.18 грн |
15+ | 69.2 грн |
41+ | 65.65 грн |
250+ | 64.76 грн |
IRFIBC40GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 816 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 160.5 грн |
3+ | 144.64 грн |
9+ | 116.22 грн |
25+ | 110.01 грн |
250+ | 107.34 грн |
IRFIBE30GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 200 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.16 грн |
10+ | 98.47 грн |
13+ | 85.17 грн |
34+ | 79.84 грн |
IRFIBF20GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 0.79A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 0.79A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 0.79A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 0.79A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 235.02 грн |
10+ | 114.24 грн |
13+ | 81.62 грн |
35+ | 77.18 грн |
IRFIBF30GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.7Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.7Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIZ14GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIZ24GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIZ34GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIZ44GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFIZ48GPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1344 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.95 грн |
10+ | 91.38 грн |
14+ | 78.07 грн |
37+ | 73.63 грн |
IRFL014TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3499 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.83 грн |
10+ | 30.13 грн |
54+ | 19.43 грн |
147+ | 18.36 грн |
10000+ | 17.65 грн |
IRFL014TRPBF-BE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
IRFL110TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1902 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.65 грн |
8+ | 38.14 грн |
50+ | 29.45 грн |
54+ | 19.16 грн |
149+ | 18.1 грн |
10000+ | 17.3 грн |
IRFL210TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2093 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.83 грн |
10+ | 53.99 грн |
32+ | 32.47 грн |
88+ | 30.7 грн |
1000+ | 30.25 грн |
2500+ | 29.36 грн |
IRFL210TRPBF-BE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 960mA; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.96A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 960mA; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.96A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
IRFL214TRPBF |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.79A; Idm: 6.3A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.79A
Pulsed drain current: 6.3A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.79A; Idm: 6.3A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.79A
Pulsed drain current: 6.3A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
IRFL9014TRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 6972 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.65 грн |
10+ | 58.04 грн |
49+ | 21.38 грн |
134+ | 20.14 грн |
10000+ | 19.87 грн |
IRFL9014TRPBF-BE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.8A; Idm: -14A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.8A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.8A; Idm: -14A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.8A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
IRFL9110TRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4076 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.06 грн |
10+ | 39.34 грн |
47+ | 22.09 грн |
129+ | 20.85 грн |
5000+ | 20.67 грн |
10000+ | 19.78 грн |
IRFL9110TRPBF-BE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.1A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.1A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.1A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.1A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товару немає в наявності
IRFP048PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFP048RPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 486 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 176.75 грн |
5+ | 143.72 грн |
11+ | 99.36 грн |
29+ | 94.04 грн |
IRFP054PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 230 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 349.67 грн |
8+ | 141.87 грн |
21+ | 129.52 грн |
IRFP064PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 477 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 278.97 грн |
5+ | 241.37 грн |
6+ | 184.53 грн |
16+ | 173.88 грн |
500+ | 172.11 грн |
IRFP140PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 735 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.82 грн |
5+ | 101.34 грн |
14+ | 78.96 грн |
37+ | 74.52 грн |
500+ | 73.63 грн |
IRFP150PBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1254 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 324.83 грн |
10+ | 121.61 грн |
12+ | 88.71 грн |
33+ | 83.39 грн |
IRFP17N50LPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFP21N60LPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
IRFP22N50APBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 460 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 415.59 грн |
6+ | 184.25 грн |
16+ | 167.67 грн |