![IRFIZ44GPBF IRFIZ44GPBF](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_AB_3_SPL.jpg)
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 210.88 грн |
10+ | 173.49 грн |
100+ | 120.27 грн |
250+ | 110.54 грн |
500+ | 100.81 грн |
1000+ | 85.51 грн |
10000+ | 79.25 грн |
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Технічний опис IRFIZ44GPBF Vishay Semiconductors
Description: MOSFET N-CH 60V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Інші пропозиції IRFIZ44GPBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFIZ44GPBF | Виробник : Vishay |
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товар відсутній |
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IRFIZ44GPBF | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP Mounting: THT Drain-source voltage: 60V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Kind of package: tube Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: TO220FP кількість в упаковці: 1 шт |
товар відсутній |
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IRFIZ44GPBF | Виробник : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товар відсутній |
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IRFIZ44GPBF | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP Mounting: THT Drain-source voltage: 60V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Kind of package: tube Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: TO220FP |
товар відсутній |