| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
P6SMB24A-M3/5B | VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 600W; 24V; 20.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||
| SIJ438ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 169A On-state resistance: 1.75mΩ Type of transistor: N-MOSFET Power dissipation: 69.4W Polarisation: unipolar Gate charge: 162nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 300A |
товар відсутній |
||||||||||||||
| SIR438DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerPAK® SO8 |
товар відсутній |
||||||||||||||
| SI4386DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 9.5mΩ Drain current: 16A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
| SI4386DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 9.5mΩ Drain current: 16A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
| TSOP36438TT | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2.5...5.5V |
товар відсутній |
||||||||||||||
| SIA906EDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 15A Power dissipation: 7.8W Gate-source voltage: ±12V On-state resistance: 63mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
CRCW0805187KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 187kΩ; 0.125W; ±1%; -55÷155°C Operating temperature: -55...155°C Case - mm: 2012 Case - inch: 0805 Mounting: SMD Type of resistor: thick film Power: 0.125W Resistance: 187kΩ Tolerance: ±1% Max. operating voltage: 150V |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW0805187RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 187Ω; 0.125W; ±1%; -55÷155°C Operating temperature: -55...155°C Case - mm: 2012 Case - inch: 0805 Mounting: SMD Type of resistor: thick film Power: 0.125W Resistance: 187Ω Tolerance: ±1% Max. operating voltage: 150V |
на замовлення 4900 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
CRCW25125M10JNTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 5.1MΩ; 1W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 5.1MΩ Power: 1W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
на замовлення 3570 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MBA02040C4704FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 4.7MΩ; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 4.7MΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MBB02070C4704FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 4.7MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 4.7MΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
CRCW12064M70JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 4.7MΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 4.7MΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW25124M70FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 4.7MΩ; 1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 4.7MΩ Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
товар відсутній |
|||||||||||||
 |
DF005M-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFM Case: DFM Kind of package: tube Max. off-state voltage: 50V Max. forward voltage: 1.1V Load current: 1A Max. forward impulse current: 50A Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товар відсутній |
|||||||||||||
 |
MFU0603FF00500P500 | VISHAY |
Category: 0603 SMD Fuses - Ultra Fast Description: Fuse: fuse; ultra rapid; 500mA; 32V; SMD; 0603 Type of fuse: fuse Fuse characteristics: ultra rapid Breaking capacity: 50A Current rating: 0.5A Rated voltage: 32V Mounting: SMD Case: 0603 |
на замовлення 2927 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MRS25000C3003FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 300kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 300kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
товар відсутній |
|||||||||||||
| SIHFBC30AS-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 2.3A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 74W Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A |
товар відсутній |
||||||||||||||
 |
2W08G | VISHAY |
Category: Round single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; WOG Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 60A Version: round Case: WOG Electrical mounting: THT Leads: wire Ø 0.75mm Max. forward voltage: 1.1V Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||||
 |
VJ0603A8R2CXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 8.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603 Type of capacitor: ceramic Capacitance: 8.2pF Operating voltage: 100V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
|
|
VJ0603A8R2DXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 8.2pF; 50V; C0G (NP0); ±0.5pF; SMD; 0603 Type of capacitor: ceramic Capacitance: 8.2pF Operating voltage: 50V Dielectric: C0G (NP0) Capacitance tolerance: ±0.5pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
|
|
VJ0603A8R2CXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 8.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 8.2pF Operating voltage: 50V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 34300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW2512910RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 910Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 910Ω Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
товар відсутній |
|||||||||||||
| SI7463ADP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W Case: PowerPAK® SO8 Drain-source voltage: -40V Drain current: -46A On-state resistance: 10mΩ Type of transistor: P-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 144nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD |
товар відсутній |
||||||||||||||
| SIR414DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 70A Power dissipation: 53W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 117nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIS892ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI7615CDN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -35A On-state resistance: 20.3mΩ Type of transistor: P-MOSFET Power dissipation: 21.1W Polarisation: unipolar Gate charge: 111nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: PowerPAK® 1212-8 |
товар відсутній |
||||||||||||||
| SQA401EEJ-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.55A Power dissipation: 4.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SQA470EEJ-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.25A Power dissipation: 13.6W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
||||||||||||||
| SI7611DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -20A; 25W Mounting: SMD Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Case: PowerPAK® 1212-8 Drain-source voltage: -40V Drain current: -18A On-state resistance: 25mΩ Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||||
| SIA459EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -40A Power dissipation: 10W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIHH070N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 93A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 93A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 71mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| KMKP 900-1.0IA | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 1uF; Ø35x52mm; ±10%; 900VAC; 16A Type of capacitor: polypropylene Capacitance: 1µF Body dimensions: Ø35x52mm Tolerance: ±10% Operating voltage: 900V AC Max. operating current: 16A |
товар відсутній |
||||||||||||||
| AC03000003908JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 3.9Ω; 3W; ±5%; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 3.9Ω Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm |
товар відсутній |
||||||||||||||
 |
PR03000203908JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 3.9Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 3.9Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
товар відсутній |
|||||||||||||
 |
IRFL210PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
MBB02070C2702FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 27kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 27kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 1263 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| Si8410DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.8W On-state resistance: 68mΩ Pulsed drain current: 20A Drain current: 5.7A Polarisation: unipolar Gate charge: 16nC Drain-source voltage: 20V Gate-source voltage: ±8V Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
| SIR410DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 36W |
товар відсутній |
||||||||||||||
| SISH410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W Mounting: SMD Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 |
товар відсутній |
||||||||||||||
| AC10000003909JAB00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 39Ω; 10W; ±5%; Ø8x44mm; axial Mounting: THT Body dimensions: Ø8x44mm Tolerance: ±5% Leads: axial Conform to the norm: AEC Q200 Type of resistor: wire-wound Power: 10W Resistance: 39Ω |
товар відсутній |
||||||||||||||
|
|
MBB02070C3909FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 39Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film Power: 0.6W Resistance: 39Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
на замовлення 850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MRS25000C3909FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 39Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Max. operating voltage: 350V Mounting: THT Type of resistor: thin film Power: 0.6W Resistance: 39Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
товар відсутній |
|||||||||||||
|
|
PR03000201208JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 1.2Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 1.2Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SIHJ690N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 11A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 11A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| AC03000001507JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 150Ω; 3W; ±5%; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 150Ω Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm |
товар відсутній |
||||||||||||||
 |
BYS12-90-E3/TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMA Max. off-state voltage: 90V Max. forward voltage: 0.75V Load current: 1.5A Semiconductor structure: single diode Max. forward impulse current: 40A |
на замовлення 2717 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| MAL219359479E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 47uF; 500VDC; Ø22x25mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 47µF Operating voltage: 500V DC Body dimensions: Ø22x25mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -25...105°C |
товар відсутній |
||||||||||||||
| SI7613DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -60A Power dissipation: 52.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±16V On-state resistance: 14mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI7623DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Mounting: SMD Kind of package: reel; tape Power dissipation: 52W Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A Case: PowerPAK® 1212-8 Drain-source voltage: -20V Drain current: -35A On-state resistance: 9mΩ Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||||
| SI7629DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI7633DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI7686DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 50A Power dissipation: 37.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI7686DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 50A Power dissipation: 37.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SISH625DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| KMKP600-100IBR | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 100uF; Ø84x190mm; 600VAC; 80A Type of capacitor: polypropylene Capacitance: 100µF Body dimensions: Ø84x190mm Operating voltage: 600V AC Max. operating current: 80A |
товар відсутній |
||||||||||||||
| 1N5253B-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 25V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 25V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товар відсутній |
||||||||||||||
 |
CRCW040215R0FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 15Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 15Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
RCA060368K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 68kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 68kΩ Tolerance: ±1% Power: 0.1W Operating temperature: -55...155°C Max. operating voltage: 75V Temperature coefficient: 100ppm/°C Case - inch: 0603 Case - mm: 1608 Conform to the norm: AEC Q200 |
товар відсутній |
|||||||||||||
|
|
VJ0603A221FXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 220pF; 100V; C0G (NP0); ±1%; SMD; 0603 Mounting: SMD Operating temperature: -55...125°C Tolerance: ±1% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 220pF Operating voltage: 100V Case - mm: 1608 Case - inch: 0603 |
товар відсутній |
| P6SMB24A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24V; 20.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| SIJ438ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
товар відсутній
| SIR438DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
товар відсутній
| SI4386DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
товар відсутній
| SI4386DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
товар відсутній
| TSOP36438TT |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
товар відсутній
| SIA906EDJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 15A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Pulsed drain current: 15A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CRCW0805187KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 187kΩ; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Type of resistor: thick film
Power: 0.125W
Resistance: 187kΩ
Tolerance: ±1%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 187kΩ; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Type of resistor: thick film
Power: 0.125W
Resistance: 187kΩ
Tolerance: ±1%
Max. operating voltage: 150V
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.16 грн |
| 500+ | 1.1 грн |
| 1000+ | 0.69 грн |
| 2500+ | 0.37 грн |
| CRCW0805187RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 187Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Type of resistor: thick film
Power: 0.125W
Resistance: 187Ω
Tolerance: ±1%
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 187Ω; 0.125W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Type of resistor: thick film
Power: 0.125W
Resistance: 187Ω
Tolerance: ±1%
Max. operating voltage: 150V
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.16 грн |
| 500+ | 1.1 грн |
| 1000+ | 0.69 грн |
| 2500+ | 0.37 грн |
| CRCW25125M10JNTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.1MΩ; 1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.1MΩ
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.1MΩ; 1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.1MΩ
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
на замовлення 3570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.21 грн |
| 100+ | 4.51 грн |
| 380+ | 2.35 грн |
| 1040+ | 2.22 грн |
| MBA02040C4704FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 4.7MΩ; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 4.7MΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 4.7MΩ; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 4.7MΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.29 грн |
| 170+ | 2.23 грн |
| 550+ | 1.62 грн |
| MBB02070C4704FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 4.7MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 4.7MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 4.7MΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 4.7MΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.69 грн |
| 100+ | 4.41 грн |
| CRCW12064M70JNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7MΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7MΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.24 грн |
| CRCW25124M70FKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 4.7MΩ; 1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 4.7MΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 4.7MΩ; 1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 4.7MΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| DF005M-E3/45 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFM
Case: DFM
Kind of package: tube
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFM
Case: DFM
Kind of package: tube
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
товар відсутній
| MFU0603FF00500P500 |
|
Виробник: VISHAY
Category: 0603 SMD Fuses - Ultra Fast
Description: Fuse: fuse; ultra rapid; 500mA; 32V; SMD; 0603
Type of fuse: fuse
Fuse characteristics: ultra rapid
Breaking capacity: 50A
Current rating: 0.5A
Rated voltage: 32V
Mounting: SMD
Case: 0603
Category: 0603 SMD Fuses - Ultra Fast
Description: Fuse: fuse; ultra rapid; 500mA; 32V; SMD; 0603
Type of fuse: fuse
Fuse characteristics: ultra rapid
Breaking capacity: 50A
Current rating: 0.5A
Rated voltage: 32V
Mounting: SMD
Case: 0603
на замовлення 2927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.76 грн |
| 23+ | 16.45 грн |
| 94+ | 9.36 грн |
| 259+ | 8.83 грн |
| MRS25000C3003FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 300kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 300kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 300kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 300kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| SIHFBC30AS-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 600V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: D2PAK; TO263
Drain-source voltage: 600V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
товар відсутній
| 2W08G |
|
Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; WOG
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 60A
Version: round
Case: WOG
Electrical mounting: THT
Leads: wire Ø 0.75mm
Max. forward voltage: 1.1V
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; WOG
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 60A
Version: round
Case: WOG
Electrical mounting: THT
Leads: wire Ø 0.75mm
Max. forward voltage: 1.1V
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| VJ0603A8R2CXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 8.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 8.2pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 8.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 8.2pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ0603A8R2DXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 8.2pF; 50V; C0G (NP0); ±0.5pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 8.2pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.5pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 8.2pF; 50V; C0G (NP0); ±0.5pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 8.2pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.5pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ0603A8R2CXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 8.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 8.2pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 8.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 8.2pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 34300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.73 грн |
| 400+ | 1.1 грн |
| 1000+ | 0.73 грн |
| 1600+ | 0.56 грн |
| 4000+ | 0.55 грн |
| 4300+ | 0.53 грн |
| CRCW2512910RFKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 910Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 910Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 910Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 910Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| SI7463ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W
Case: PowerPAK® SO8
Drain-source voltage: -40V
Drain current: -46A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 144nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -70A; 25W
Case: PowerPAK® SO8
Drain-source voltage: -40V
Drain current: -46A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 144nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
товар відсутній
| SIR414DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIS892ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7615CDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 20.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 21.1W
Polarisation: unipolar
Gate charge: 111nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 20.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 21.1W
Polarisation: unipolar
Gate charge: 111nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| SQA401EEJ-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.55A
Power dissipation: 4.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SQA470EEJ-T1_GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.25A
Power dissipation: 13.6W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SI7611DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -20A; 25W
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Case: PowerPAK® 1212-8
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; Idm: -20A; 25W
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Case: PowerPAK® 1212-8
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
товар відсутній
| SIA459EDJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHH070N60EF-T1GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 93A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 93A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 93A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 93A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| KMKP 900-1.0IA |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; Ø35x52mm; ±10%; 900VAC; 16A
Type of capacitor: polypropylene
Capacitance: 1µF
Body dimensions: Ø35x52mm
Tolerance: ±10%
Operating voltage: 900V AC
Max. operating current: 16A
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; Ø35x52mm; ±10%; 900VAC; 16A
Type of capacitor: polypropylene
Capacitance: 1µF
Body dimensions: Ø35x52mm
Tolerance: ±10%
Operating voltage: 900V AC
Max. operating current: 16A
товар відсутній
| AC03000003908JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
товар відсутній
| PR03000203908JAC00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 3.9Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 3.9Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 3.9Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| IRFL210PBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MBB02070C2702FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 27kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 27kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 27kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 27kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 1263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.71 грн |
| 12+ | 32 грн |
| 50+ | 25.31 грн |
| 77+ | 11.52 грн |
| 211+ | 10.89 грн |
| Si8410DB-T2-E1 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.8W
On-state resistance: 68mΩ
Pulsed drain current: 20A
Drain current: 5.7A
Polarisation: unipolar
Gate charge: 16nC
Drain-source voltage: 20V
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 5.7A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.8W
On-state resistance: 68mΩ
Pulsed drain current: 20A
Drain current: 5.7A
Polarisation: unipolar
Gate charge: 16nC
Drain-source voltage: 20V
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
товар відсутній
| SIR410DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
товар відсутній
| SISH410DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
товар відсутній
| AC10000003909JAB00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 10W; ±5%; Ø8x44mm; axial
Mounting: THT
Body dimensions: Ø8x44mm
Tolerance: ±5%
Leads: axial
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Power: 10W
Resistance: 39Ω
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 10W; ±5%; Ø8x44mm; axial
Mounting: THT
Body dimensions: Ø8x44mm
Tolerance: ±5%
Leads: axial
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Power: 10W
Resistance: 39Ω
товар відсутній
| MBB02070C3909FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 39Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: metal film; THT; 39Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
на замовлення 850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46 грн |
| 80+ | 11.52 грн |
| 220+ | 10.89 грн |
| MRS25000C3909FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 39Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 39Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Max. operating voltage: 350V
Mounting: THT
Type of resistor: thin film
Power: 0.6W
Resistance: 39Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| PR03000201208JAC00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 1.2Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 1.2Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 1.2Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 1.2Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.9 грн |
| SIHJ690N60E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 11A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 11A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 11A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 11A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| AC03000001507JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 150Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 150Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 150Ω; 3W; ±5%; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 150Ω
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
товар відсутній
| BYS12-90-E3/TR |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Max. off-state voltage: 90V
Max. forward voltage: 0.75V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Max. off-state voltage: 90V
Max. forward voltage: 0.75V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 40A
на замовлення 2717 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.48 грн |
| 36+ | 10.57 грн |
| 100+ | 9.36 грн |
| 106+ | 8.25 грн |
| 292+ | 7.8 грн |
| MAL219359479E3 |
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 47uF; 500VDC; Ø22x25mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 47µF
Operating voltage: 500V DC
Body dimensions: Ø22x25mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 47uF; 500VDC; Ø22x25mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 47µF
Operating voltage: 500V DC
Body dimensions: Ø22x25mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...105°C
товар відсутній
| SI7613DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -60A
Power dissipation: 52.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7623DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
товар відсутній
| SI7629DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7633DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -60A; Idm: -100A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7686DP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7686DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 50A
Power dissipation: 37.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SISH625DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| KMKP600-100IBR |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100uF; Ø84x190mm; 600VAC; 80A
Type of capacitor: polypropylene
Capacitance: 100µF
Body dimensions: Ø84x190mm
Operating voltage: 600V AC
Max. operating current: 80A
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100uF; Ø84x190mm; 600VAC; 80A
Type of capacitor: polypropylene
Capacitance: 100µF
Body dimensions: Ø84x190mm
Operating voltage: 600V AC
Max. operating current: 80A
товар відсутній
| 1N5253B-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 25V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 25V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| CRCW040215R0FKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 15Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 15Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 15Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 15Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.98 грн |
| 1000+ | 0.4 грн |
| 4800+ | 0.18 грн |
| RCA060368K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 68kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 68kΩ
Tolerance: ±1%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 68kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 68kΩ
Tolerance: ±1%
Power: 0.1W
Operating temperature: -55...155°C
Max. operating voltage: 75V
Temperature coefficient: 100ppm/°C
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC Q200
товар відсутній
| VJ0603A221FXBAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 100V; C0G (NP0); ±1%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±1%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 220pF
Operating voltage: 100V
Case - mm: 1608
Case - inch: 0603
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 100V; C0G (NP0); ±1%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±1%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 220pF
Operating voltage: 100V
Case - mm: 1608
Case - inch: 0603
товар відсутній