| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1.5SMC510AHM3_B/H | VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 1.5kW; 485÷535V; unidirectional; SMC; reel,tape; 1.5SMC Mounting: SMD Manufacturer series: 1.5SMC Application: automotive industry Max. off-state voltage: 434V Semiconductor structure: unidirectional Breakdown voltage: 485...535V Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 1.5kW Case: SMC |
товар відсутній |
|||||||||||||
|
|
1.5SMC510AHM3_B/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 485÷535V; unidirectional; SMC; reel,tape; 1.5SMC Mounting: SMD Manufacturer series: 1.5SMC Application: automotive industry Max. off-state voltage: 434V Semiconductor structure: unidirectional Breakdown voltage: 485...535V Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 1.5kW Case: SMC |
товар відсутній |
|||||||||||||
| SI1023CX-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -450mA; 220mW Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.45A Pulsed drain current: -1.5A Power dissipation: 0.22W Case: SC89 Gate-source voltage: ±8V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI1024X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 515mA Pulsed drain current: 0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
SI1036X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 610mA Pulsed drain current: 2A Power dissipation: 0.22W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 1.1Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1987 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SI1900DL-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.63A Pulsed drain current: 1A Power dissipation: 0.3W Case: SC70-6; SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI1900DL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.63A Pulsed drain current: 1A Power dissipation: 0.3W Case: SC70-6; SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI1967DH-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Pulsed drain current: -3A Power dissipation: 1.25W Case: SC70-6; SOT363 Gate-source voltage: ±8V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI1967DH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Pulsed drain current: -3A Power dissipation: 1.25W Case: SC70-6; SOT363 Gate-source voltage: ±8V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| Si3932DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.7A Pulsed drain current: 15A Power dissipation: 1.4W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SI4804CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 30A Type of transistor: N-MOSFET x2 Power dissipation: 3.1W On-state resistance: 27mΩ Drain current: 8A Drain-source voltage: 30V |
товар відсутній |
||||||||||||||
 |
SMM02040C2051FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.05kΩ; 0.4W; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 2.05kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 3577 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| T55B226M010C0070 | VISHAY |
Category: Polymer - tantalum capacitors Description: Capacitor: tantalum-polymer; 22uF; SMD; 10VDC; B; 1411; ±20% Type of capacitor: tantalum-polymer Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±20% Operating temperature: -55...125°C |
товар відсутній |
||||||||||||||
| T55B226M016C0070 | VISHAY |
Category: Polymer - tantalum capacitors Description: Capacitor: tantalum-polymer; SMD; B; 1411; ±20%; 22uF; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Operating voltage: 16V DC Case: B Tolerance: ±20% Type of capacitor: tantalum-polymer Capacitance: 22µF Case - mm: 3528 Case - inch: 1411 |
товар відсутній |
||||||||||||||
|
|
1.5SMC36CA-E3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
|||||||||||||
|
|
1.5SMC36CA-E3/9AT | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
|||||||||||||
|
|
1.5SMC36CA-M3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
|||||||||||||
|
|
1.5SMC36CA-M3/9AT | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
|||||||||||||
|
|
1.5SMC36CAHE3_A/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
|||||||||||||
|
|
1.5SMC36CAHE3_A/I | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry Technology: TransZorb® Manufacturer series: 1.5SMC |
товар відсутній |
|||||||||||||
 |
MBB02070C1621FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 1.62kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 1.62kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MRS25000C1621FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 1.62kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 1.62kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
на замовлення 2920 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
CRCW2512120RFKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 120Ω Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
товар відсутній |
|||||||||||||
|
|
CRCW2512120RJNEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 120Ω Power: 1W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
товар відсутній |
|||||||||||||
|
|
CRCW2512120RJNTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 120Ω Power: 1W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
товар відсутній |
|||||||||||||
| T52E5476M035C0070 | VISHAY |
Category: Polymer - tantalum capacitors Description: Capacitor: tantalum-polymer; 47uF; 35V; 2917; ESR: 70mΩ; SMD; ±20% Type of capacitor: tantalum-polymer Capacitance: 47µF Operating voltage: 35V Case - inch: 2917 Case - mm: 7343 ESR value: 70mΩ Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Service life: 2000h |
товар відсутній |
||||||||||||||
| T52E5476M035C0100 | VISHAY |
Category: Polymer - tantalum capacitors Description: Capacitor: tantalum-polymer; 47uF; 35V; 2917; ESR: 100mΩ; SMD; ±20% Type of capacitor: tantalum-polymer Capacitance: 47µF Operating voltage: 35V Case - inch: 2917 Case - mm: 7343 ESR value: 100mΩ Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Service life: 2000h |
товар відсутній |
||||||||||||||
 |
P6SMB18CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 23.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||
|
|
P6SMB18CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 23.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||
|
|
P6SMB18CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 23.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||
|
|
P6SMB18CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 23.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||
| TGL41-18A-E3/96 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 18V; 15.9A; unidirectional; DO213AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 18V Max. forward impulse current: 15.9A Semiconductor structure: unidirectional Case: DO213AB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Technology: TransZorb® |
товар відсутній |
||||||||||||||
 |
UG4D-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 150A; DO201AD; Ufmax: 0.95V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 20pF Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 0.95V Leakage current: 0.3mA Reverse recovery time: 50ns |
на замовлення 691 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SI4963BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A |
товар відсутній |
||||||||||||||
| SI4963BDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A |
товар відсутній |
||||||||||||||
 |
RCA0603100RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 100Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 100Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
товар відсутній |
|||||||||||||
|
|
RCA0603100RJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 100Ω; 100mW; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 100Ω Power: 0.1W Tolerance: ±5% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC Q200 |
товар відсутній |
|||||||||||||
 |
VJ1206Y102KXEAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1nF; 500V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 1nF Operating voltage: 500V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
|
|
VJ1206Y102KXETW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1nF; 500V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1nF Operating voltage: 500V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 7794 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SIJA54DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36.7W On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
MRS25000C1741FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 1.74kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 1.74kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
на замовлення 430 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
VJ0402L3R3VXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3pF; 50V; ±0.05pF; SMD; 0402 Type of capacitor: ceramic Capacitance: 3.3pF Operating voltage: 50V Capacitance tolerance: ±0.05pF Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
 |
VJ0603A3R3BXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3pF; 16V; C0G (NP0); ±0.1pF; SMD; 0603 Type of capacitor: ceramic Capacitance: 3.3pF Operating voltage: 16V Dielectric: C0G (NP0) Capacitance tolerance: ±0.1pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 3300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
VJ0603A3R3CXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603 Type of capacitor: ceramic Capacitance: 3.3pF Operating voltage: 50V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
 |
VJ0805A3R3CXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3pF; 50V; C0G (NP0); ±0.25pF; SMD; 0805 Type of capacitor: ceramic Capacitance: 3.3pF Operating voltage: 50V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
|
|
VJ0805A3R3CXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3pF; 100V; C0G (NP0); ±0.25pF; SMD; 0805 Type of capacitor: ceramic Capacitance: 3.3pF Operating voltage: 100V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
| T52M1107M035C0070 | VISHAY |
Category: Polymer - tantalum capacitors Description: Capacitor: tantalum-polymer; 100uF; 35V; 2924; ESR: 70mΩ; SMD; ±20% Type of capacitor: tantalum-polymer Capacitance: 100µF Operating voltage: 35V Case - inch: 2924 Case - mm: 7360 ESR value: 70mΩ Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Service life: 2000h |
товар відсутній |
||||||||||||||
 |
MMBZ4714-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
товар відсутній |
|||||||||||||
| SIR606DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 100A Power dissipation: 44.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 36.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIR804DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.3mΩ Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIR846DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
VO2601-X007T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: logic; 1.5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 1.5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 23ns Turn-off time: 7ns |
товар відсутній |
|||||||||||||
| VO2611 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: DIP8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2611 |
товар відсутній |
||||||||||||||
| VO2611-X007T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL Turn-on time: 48ns Turn-off time: 50ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2611 |
товар відсутній |
||||||||||||||
| VO2611-X017T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2611 |
товар відсутній |
||||||||||||||
 |
VO2631 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: logic; 1.5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 1.5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 23ns Turn-off time: 7ns |
на замовлення 2093 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| VO2631-X007T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2631 |
товар відсутній |
||||||||||||||
| VO2631-X017T | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 48ns Turn-off time: 50ns Slew rate: 5kV/μs Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2611 |
товар відсутній |
||||||||||||||
| VLMF31Q2T1-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 3528; orange; 90÷355mcd; 3x2.8x1.75mm; 120°; 2÷2.6V; 20mA Type of diode: LED Mounting: SMD Case: 3528 LED colour: orange Luminosity: 90...355mcd Dimensions: 3x2.8x1.75mm Viewing angle: 120° LED current: 20mA Wavelength: 598...611nm Front: flat Operating voltage: 2...2.6V |
товар відсутній |
||||||||||||||
| VLMF31Q2T1-GS18 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; orange; 90÷200(typ)-355mcd; 3x2.8x1.75mm; 60° Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: orange Luminosity: 90...200(typ)-355mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 30mA Wavelength: 598...611nm Front: flat Operating voltage: 2...2.6V |
товар відсутній |
| 1.5SMC510AHM3_B/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 485÷535V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Max. off-state voltage: 434V
Semiconductor structure: unidirectional
Breakdown voltage: 485...535V
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 485÷535V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Max. off-state voltage: 434V
Semiconductor structure: unidirectional
Breakdown voltage: 485...535V
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
товар відсутній
| 1.5SMC510AHM3_B/I |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 485÷535V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Max. off-state voltage: 434V
Semiconductor structure: unidirectional
Breakdown voltage: 485...535V
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 485÷535V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Max. off-state voltage: 434V
Semiconductor structure: unidirectional
Breakdown voltage: 485...535V
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
товар відсутній
| SI1023CX-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -450mA; 220mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.45A
Pulsed drain current: -1.5A
Power dissipation: 0.22W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -450mA; 220mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.45A
Pulsed drain current: -1.5A
Power dissipation: 0.22W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1024X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 515mA
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 515mA; 280mW
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 515mA
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1036X-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 610mA
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 610mA
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 26.82 грн |
| 20+ | 19.62 грн |
| 100+ | 11.77 грн |
| 141+ | 6.26 грн |
| 389+ | 5.89 грн |
| SI1900DL-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1900DL-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.63A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SC70-6; SOT363
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1967DH-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1967DH-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25W
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Pulsed drain current: -3A
Power dissipation: 1.25W
Case: SC70-6; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| Si3932DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.7A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4804CDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 30A
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
On-state resistance: 27mΩ
Drain current: 8A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 30A
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
On-state resistance: 27mΩ
Drain current: 8A
Drain-source voltage: 30V
товар відсутній
| SMM02040C2051FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.05kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 2.05kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.05kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 2.05kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 3577 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.83 грн |
| 125+ | 3.3 грн |
| 500+ | 1.34 грн |
| 3000+ | 1 грн |
| T55B226M010C0070 |
|
Виробник: VISHAY
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 22uF; SMD; 10VDC; B; 1411; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±20%
Operating temperature: -55...125°C
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 22uF; SMD; 10VDC; B; 1411; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±20%
Operating temperature: -55...125°C
товар відсутній
| T55B226M016C0070 |
|
Виробник: VISHAY
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; SMD; B; 1411; ±20%; 22uF; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Operating voltage: 16V DC
Case: B
Tolerance: ±20%
Type of capacitor: tantalum-polymer
Capacitance: 22µF
Case - mm: 3528
Case - inch: 1411
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; SMD; B; 1411; ±20%; 22uF; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Operating voltage: 16V DC
Case: B
Tolerance: ±20%
Type of capacitor: tantalum-polymer
Capacitance: 22µF
Case - mm: 3528
Case - inch: 1411
товар відсутній
| 1.5SMC36CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC36CA-E3/9AT |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC36CA-M3/57T |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC36CA-M3/9AT |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC36CAHE3_A/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| 1.5SMC36CAHE3_A/I |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Technology: TransZorb®
Manufacturer series: 1.5SMC
товар відсутній
| MBB02070C1621FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 1.62kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 1.62kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 1.62kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 1.62kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.73 грн |
| 100+ | 3.95 грн |
| 290+ | 3.11 грн |
| MRS25000C1621FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 1.62kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 1.62kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 1.62kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 1.62kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
на замовлення 2920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.64 грн |
| 130+ | 2.92 грн |
| 710+ | 1.25 грн |
| 1940+ | 1.18 грн |
| CRCW2512120RFKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 120Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 120Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| CRCW2512120RJNEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 120Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 120Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
товар відсутній
| CRCW2512120RJNTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 120Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 120Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
товар відсутній
| T52E5476M035C0070 |
|
Виробник: VISHAY
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 47uF; 35V; 2917; ESR: 70mΩ; SMD; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 47µF
Operating voltage: 35V
Case - inch: 2917
Case - mm: 7343
ESR value: 70mΩ
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Service life: 2000h
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 47uF; 35V; 2917; ESR: 70mΩ; SMD; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 47µF
Operating voltage: 35V
Case - inch: 2917
Case - mm: 7343
ESR value: 70mΩ
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Service life: 2000h
товар відсутній
| T52E5476M035C0100 |
Виробник: VISHAY
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 47uF; 35V; 2917; ESR: 100mΩ; SMD; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 47µF
Operating voltage: 35V
Case - inch: 2917
Case - mm: 7343
ESR value: 100mΩ
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Service life: 2000h
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 47uF; 35V; 2917; ESR: 100mΩ; SMD; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 47µF
Operating voltage: 35V
Case - inch: 2917
Case - mm: 7343
ESR value: 100mΩ
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Service life: 2000h
товар відсутній
| P6SMB18CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB18CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB18CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB18CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 23.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 23.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| TGL41-18A-E3/96 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 15.9A; unidirectional; DO213AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 18V
Max. forward impulse current: 15.9A
Semiconductor structure: unidirectional
Case: DO213AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Technology: TransZorb®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18V; 15.9A; unidirectional; DO213AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 18V
Max. forward impulse current: 15.9A
Semiconductor structure: unidirectional
Case: DO213AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Technology: TransZorb®
товар відсутній
| UG4D-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 150A; DO201AD; Ufmax: 0.95V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 20pF
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 0.95V
Leakage current: 0.3mA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 150A; DO201AD; Ufmax: 0.95V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 20pF
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 0.95V
Leakage current: 0.3mA
Reverse recovery time: 50ns
на замовлення 691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.2 грн |
| 12+ | 31.47 грн |
| 13+ | 30.11 грн |
| 25+ | 26.57 грн |
| 49+ | 18.19 грн |
| 133+ | 17.21 грн |
| SI4963BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
товар відсутній
| SI4963BDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
товар відсутній
| RCA0603100RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 100Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 100Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| RCA0603100RJNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 100Ω; 100mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 100Ω; 100mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 100Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| VJ1206Y102KXEAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 500V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 500V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206Y102KXETW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 500V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 500V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 7794 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.26 грн |
| 250+ | 3.03 грн |
| 300+ | 2.93 грн |
| 500+ | 2.63 грн |
| 601+ | 1.46 грн |
| 1652+ | 1.39 грн |
| SIJA54DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MRS25000C1741FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 1.74kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 1.74kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 1.74kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 1.74kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
на замовлення 430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.64 грн |
| 130+ | 2.92 грн |
| VJ0402L3R3VXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 50V; ±0.05pF; SMD; 0402
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 50V
Capacitance tolerance: ±0.05pF
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 50V; ±0.05pF; SMD; 0402
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 50V
Capacitance tolerance: ±0.05pF
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| VJ0603A3R3BXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 16V; C0G (NP0); ±0.1pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 16V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.1pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 16V; C0G (NP0); ±0.1pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 16V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.1pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 3300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.54 грн |
| 1000+ | 1.07 грн |
| 1300+ | 0.73 грн |
| VJ0603A3R3CXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ0805A3R3CXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 50V; C0G (NP0); ±0.25pF; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 50V; C0G (NP0); ±0.25pF; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805A3R3CXBAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 100V; C0G (NP0); ±0.25pF; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3pF; 100V; C0G (NP0); ±0.25pF; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.3pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| T52M1107M035C0070 |
|
Виробник: VISHAY
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 100uF; 35V; 2924; ESR: 70mΩ; SMD; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 100µF
Operating voltage: 35V
Case - inch: 2924
Case - mm: 7360
ESR value: 70mΩ
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Service life: 2000h
Category: Polymer - tantalum capacitors
Description: Capacitor: tantalum-polymer; 100uF; 35V; 2924; ESR: 70mΩ; SMD; ±20%
Type of capacitor: tantalum-polymer
Capacitance: 100µF
Operating voltage: 35V
Case - inch: 2924
Case - mm: 7360
ESR value: 70mΩ
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Service life: 2000h
товар відсутній
| MMBZ4714-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
товар відсутній
| SIR606DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR804DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR846DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VO2601-X007T |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 1.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 1.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 23ns
Turn-off time: 7ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 1.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 1.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 23ns
Turn-off time: 7ns
товар відсутній
| VO2611 |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
товар відсутній
| VO2611-X007T |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 48ns
Turn-off time: 50ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 48ns
Turn-off time: 50ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
товар відсутній
| VO2611-X017T |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
товар відсутній
| VO2631 |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 1.5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 1.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 23ns
Turn-off time: 7ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; 1.5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 1.5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 23ns
Turn-off time: 7ns
на замовлення 2093 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.16 грн |
| 5+ | 86.04 грн |
| 12+ | 75.47 грн |
| 33+ | 71.7 грн |
| 100+ | 70.94 грн |
| 500+ | 68.68 грн |
| VO2631-X007T |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2631
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2631
товар відсутній
| VO2631-X017T |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 48ns
Turn-off time: 50ns
Slew rate: 5kV/μs
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 48ns
Turn-off time: 50ns
Slew rate: 5kV/μs
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
товар відсутній
| VLMF31Q2T1-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 3528; orange; 90÷355mcd; 3x2.8x1.75mm; 120°; 2÷2.6V; 20mA
Type of diode: LED
Mounting: SMD
Case: 3528
LED colour: orange
Luminosity: 90...355mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 120°
LED current: 20mA
Wavelength: 598...611nm
Front: flat
Operating voltage: 2...2.6V
Category: SMD colour LEDs
Description: LED; SMD; 3528; orange; 90÷355mcd; 3x2.8x1.75mm; 120°; 2÷2.6V; 20mA
Type of diode: LED
Mounting: SMD
Case: 3528
LED colour: orange
Luminosity: 90...355mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 120°
LED current: 20mA
Wavelength: 598...611nm
Front: flat
Operating voltage: 2...2.6V
товар відсутній
| VLMF31Q2T1-GS18 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; orange; 90÷200(typ)-355mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: orange
Luminosity: 90...200(typ)-355mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 598...611nm
Front: flat
Operating voltage: 2...2.6V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; orange; 90÷200(typ)-355mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: orange
Luminosity: 90...200(typ)-355mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 598...611nm
Front: flat
Operating voltage: 2...2.6V
товар відсутній