Технічний опис SIHFBC30AS-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W, Mounting: SMD, Polarisation: unipolar, Kind of package: reel; tape, Case: D2PAK; TO263, Drain-source voltage: 600V, Drain current: 2.3A, On-state resistance: 2.2Ω, Type of transistor: N-MOSFET, Power dissipation: 74W, Gate charge: 23nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 14A, кількість в упаковці: 1 шт.
Інші пропозиції SIHFBC30AS-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFBC30AS-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 2.3A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 74W Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A кількість в упаковці: 1 шт |
товар відсутній |
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| SIHFBC30AS-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 2.3A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 74W Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A |
товар відсутній |