| Фото | Назва | Виробник | Інформація |
Доступність |
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| SIZ270DT-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 19.5A Pulsed drain current: 40A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 54.1/51.7mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
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VS-FC270SA20 | VISHAY |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 219A; SOT227B; screw; Idm: 680A Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 219A On-state resistance: 3.3mΩ Power dissipation: 937W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: ThunderFET Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 680A Case: SOT227B |
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| GSIB1520-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 15A Max. forward impulse current: 300A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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| GSIB1520N-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 15A Max. forward impulse current: 300A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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| GSIB1540-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 15A Max. forward impulse current: 300A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
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GSIB1580-E3/45 | VISHAY |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 300A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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| GSIB15A40-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| GSIB15A80-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| GSIB2080-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 20A Max. forward impulse current: 240A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| GSIB2080N-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 20A Max. forward impulse current: 240A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| GSIB2520-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| GSIB2520N-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| GSIB2540-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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BY448TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 2A; Ammo Pack; Ifsm: 30A; SOD57; 20us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; high voltage Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.6V Leakage current: 140µA Reverse recovery time: 20µs |
на замовлення 2781 шт: термін постачання 21-30 дні (днів) |
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| TCUT1300X01 | VISHAY |
Category: PCB Photoelectric Sensors Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3mm Aperture width: 0.3mm Mounting: PCB; SMD Body dimensions: 5.5x4x4mm Collector-emitter voltage: 20V Operating temperature: -40...105°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 0.6mA |
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CRCW08052K80FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 2.8kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 2.8kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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VS-12CWQ03FN-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 6Ax2; DPAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 6A x2 Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 0.37V Max. load current: 12A Max. forward impulse current: 320A Kind of package: tube |
на замовлення 738 шт: термін постачання 21-30 дні (днів) |
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| VS-12CWQ04FN-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 6Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 6A x2 Semiconductor structure: common cathode; double Capacitance: 405pF Case: DPAK Max. forward voltage: 0.68V Max. load current: 12A Max. forward impulse current: 0.55kA Kind of package: reel; tape |
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SML4756-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 47V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 47V Mounting: SMD Tolerance: ±10% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
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SML4756A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 47V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
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GPP20B-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Kind of package: reel; tape Max. forward impulse current: 70A Case: DO15 Max. forward voltage: 1.1V Leakage current: 50µA |
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GPP20J-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Kind of package: reel; tape Max. forward impulse current: 70A Case: DO15 Max. forward voltage: 1.1V Leakage current: 50µA |
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GPP20J-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; Ammo Pack; Ifsm: 70A; DO15; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Kind of package: Ammo Pack Max. forward impulse current: 70A Case: DO15 Max. forward voltage: 1.1V Leakage current: 50µA |
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| PRV6SAABBXB25103KA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 10kΩ; 1.5W; ±10%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 10kΩ Power: 1.5W Tolerance: ±10% Shaft diameter: 3.17mm Characteristics: linear Leads: solder lugs Shaft length: 12.5mm Electrical rotation angle: 270° Operating temperature: -55...125°C Temperature coefficient: 150ppm/°C Track material: cermet Mechanical rotation angle: 300° IP rating: IP67 Mechanical durability: 50000 cycles |
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CRCW0805221KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 221kΩ; 0.125W; ±1%; -55÷155°C Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Case - mm: 2012 Case - inch: 0805 Type of resistor: thick film Power: 0.125W Resistance: 221kΩ Max. operating voltage: 150V |
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| SIHF840S-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
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MBB02070C6819FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 68Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 68Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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GRC00AA3R32ATFL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3.3uF; 100VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3µF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 5x11mm |
на замовлення 1520 шт: термін постачання 21-30 дні (днів) |
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GRC00AA3R32ATNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3.3uF; 100VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3µF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 5x11mm |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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T18202KT10 | VISHAY |
Category: 19mm multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear Mounting: THT Resistance: 2kΩ Power: 0.75W Tolerance: ±10% Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Min. insulation resistance: 1TΩ Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear |
на замовлення 546 шт: термін постачання 21-30 дні (днів) |
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| SI3900DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 1.15W Polarisation: unipolar Gate charge: 4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSOP6 |
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| Si3900DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 1.15W Polarisation: unipolar Gate charge: 4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSOP6 |
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BZM55B6V2-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: BZM55 |
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BZM55B6V2-TR3 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: BZM55 |
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| BZT52B6V2-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52C |
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| BZT52B6V2-E3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52C |
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| BZT52B6V2-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52-G |
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| BZT52B6V2-G3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52-G |
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GF1M-E3/67A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 2us; DO214BA; Ufmax: 1.2V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DO214BA Max. forward voltage: 1.2V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
на замовлення 6643 шт: термін постачання 21-30 дні (днів) |
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| GF1M-E3/5CA | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 2us; DO214BA; Ufmax: 1.2V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DO214BA Max. forward voltage: 1.2V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
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VSMA1094600 | VISHAY |
Category: IR LEDs Description: IR transmitter; 950nm; transparent; 1425mW; 60°; SMD; 1000mA Type of diode: IR transmitter Wavelength: 950nm LED lens: transparent Optical power: 1425mW Viewing angle: 60° Mounting: SMD Dimensions: 3.4x3.4x1.8mm LED current: 1A Operating voltage: 2.5...3.1V |
на замовлення 590 шт: термін постачання 21-30 дні (днів) |
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MAL203690109E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø8.2x11mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 50V DC Body dimensions: Ø8.2x11mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...85°C |
на замовлення 1031 шт: термін постачання 21-30 дні (днів) |
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MAL204121109E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 10uF; 160VDC; Ø8x18mm; ±20%; 5000h Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 160V DC Body dimensions: Ø8x18mm Tolerance: ±20% Leads: axial Service life: 5000h Operating temperature: -40...85°C |
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MAL204215109E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 10uF; 350VDC; Ø12.5x30mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 350V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Leads: axial Service life: 15000h Operating temperature: -40...85°C |
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MAL204225109E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 10uF; 350VDC; Ø12.5x30mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 10µF Operating voltage: 350V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Leads: axial Service life: 15000h Operating temperature: -40...85°C |
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MBB02070C1402FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 14kΩ; 600mW; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 14kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 6480 шт: термін постачання 21-30 дні (днів) |
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SMM02040D1402BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 14kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 14kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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AC04000001001JAC00 | VISHAY |
Category: Other Resistors Description: Resistor: wire-wound; THT; 1kΩ; 4W; ±5%; Ø5.5x16.5mm; -50÷250°C Resistance: 1kΩ Tolerance: ±5% Body dimensions: Ø5.5x16.5mm Leads dimensions: Ø0.8x25mm Temperature coefficient: 80ppm/°C Resistor features: non-flammable Leads: axial Mounting: THT Operating temperature: -50...250°C Type of resistor: wire-wound Power: 4W |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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GBU4G-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 728 шт: термін постачання 21-30 дні (днів) |
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GBU6G-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товар відсутній |
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GBU8G-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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| VI40100G-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.81V |
товар відсутній |
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| VI20100SG-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20A; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Case: I2PAK Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.07V |
товар відсутній |
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CRCW0805280RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 280Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 280Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 4200 шт: термін постачання 21-30 дні (днів) |
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SMM02040D2800BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 280Ω; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 280Ω Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
товар відсутній |
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BZM55C10-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; MicroMELF; single diode Case: MicroMELF Mounting: SMD Manufacturer series: BZM55 Power dissipation: 0.5W Semiconductor structure: single diode Zener voltage: 10V Leakage current: 2µA Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener |
на замовлення 12500 шт: термін постачання 21-30 дні (днів) |
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BZM55C10-TR3 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: BZM55 |
товар відсутній |
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| SIA517DJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 12/-12V Drain current: 4.5/-4.5A Power dissipation: 6.5W Gate-source voltage: ±8V On-state resistance: 170/65mΩ Mounting: SMD Gate charge: 20/15nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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VJ1206Y332KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3nF; 100V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 3.3nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товар відсутній |
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HV1812Y332KXHATHV | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3nF; 3kV; X7R; ±10%; SMD; 1812 Type of capacitor: ceramic Capacitance: 3.3nF Operating voltage: 3kV Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товар відсутній |
| SIZ270DT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 19.5A
Pulsed drain current: 40A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 54.1/51.7mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 19.5A
Pulsed drain current: 40A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 54.1/51.7mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VS-FC270SA20 |
|
Виробник: VISHAY
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 219A; SOT227B; screw; Idm: 680A
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 219A
On-state resistance: 3.3mΩ
Power dissipation: 937W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: ThunderFET
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 680A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 219A; SOT227B; screw; Idm: 680A
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 219A
On-state resistance: 3.3mΩ
Power dissipation: 937W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: ThunderFET
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 680A
Case: SOT227B
товар відсутній
| GSIB1520-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB1520N-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB1540-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB1580-E3/45 | |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 300A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.19 грн |
| 5+ | 169.06 грн |
| 7+ | 138.87 грн |
| 18+ | 131.32 грн |
| GSIB15A40-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB15A80-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB2080-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 240A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 240A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB2080N-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 240A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 240A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB2520-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB2520N-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GSIB2540-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| BY448TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.5kV; 2A; Ammo Pack; Ifsm: 30A; SOD57; 20us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.5kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.6V
Leakage current: 140µA
Reverse recovery time: 20µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.5kV; 2A; Ammo Pack; Ifsm: 30A; SOD57; 20us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.5kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; high voltage
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.6V
Leakage current: 140µA
Reverse recovery time: 20µs
на замовлення 2781 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.7 грн |
| 11+ | 35.7 грн |
| 12+ | 33.66 грн |
| 25+ | 27.09 грн |
| 43+ | 20.75 грн |
| 117+ | 19.62 грн |
| TCUT1300X01 |
|
Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3mm
Aperture width: 0.3mm
Mounting: PCB; SMD
Body dimensions: 5.5x4x4mm
Collector-emitter voltage: 20V
Operating temperature: -40...105°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.6mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3mm
Aperture width: 0.3mm
Mounting: PCB; SMD
Body dimensions: 5.5x4x4mm
Collector-emitter voltage: 20V
Operating temperature: -40...105°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.6mA
товар відсутній
| CRCW08052K80FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.8kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.8kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.8kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.8kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 0.16 грн |
| VS-12CWQ03FN-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 6Ax2; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 6A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.37V
Max. load current: 12A
Max. forward impulse current: 320A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 6Ax2; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 6A x2
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 0.37V
Max. load current: 12A
Max. forward impulse current: 320A
Kind of package: tube
на замовлення 738 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.09 грн |
| 7+ | 54.49 грн |
| 22+ | 41.51 грн |
| 59+ | 39.25 грн |
| VS-12CWQ04FN-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 6Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 6A x2
Semiconductor structure: common cathode; double
Capacitance: 405pF
Case: DPAK
Max. forward voltage: 0.68V
Max. load current: 12A
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 6Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 6A x2
Semiconductor structure: common cathode; double
Capacitance: 405pF
Case: DPAK
Max. forward voltage: 0.68V
Max. load current: 12A
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
товар відсутній
| SML4756-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 47V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 47V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| SML4756A-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 47V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 47V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| GPP20B-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
товар відсутній
| GPP20J-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
товар відсутній
| GPP20J-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ammo Pack; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; Ammo Pack; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
товар відсутній
| PRV6SAABBXB25103KA |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 10kΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 10kΩ
Power: 1.5W
Tolerance: ±10%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 10kΩ; 1.5W; ±10%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 10kΩ
Power: 1.5W
Tolerance: ±10%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
товар відсутній
| CRCW0805221KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 221kΩ; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Power: 0.125W
Resistance: 221kΩ
Max. operating voltage: 150V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 221kΩ; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Type of resistor: thick film
Power: 0.125W
Resistance: 221kΩ
Max. operating voltage: 150V
товар відсутній
| SIHF840S-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MBB02070C6819FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 68Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 68Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 68Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 68Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 43.08 грн |
| 80+ | 11.04 грн |
| 220+ | 10.44 грн |
| GRC00AA3R32ATFL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.34 грн |
| 110+ | 3.53 грн |
| 140+ | 2.7 грн |
| 500+ | 1.89 грн |
| 590+ | 1.51 грн |
| GRC00AA3R32ATNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.34 грн |
| 110+ | 3.53 грн |
| 140+ | 2.7 грн |
| T18202KT10 |
|
Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 2kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 2kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
на замовлення 546 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.26 грн |
| 10+ | 155.47 грн |
| 11+ | 86.79 грн |
| 28+ | 82.26 грн |
| SI3900DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
товар відсутній
| Si3900DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 1.15W
Polarisation: unipolar
Gate charge: 4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSOP6
товар відсутній
| BZM55B6V2-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
товар відсутній
| BZM55B6V2-TR3 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
товар відсутній
| BZT52B6V2-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
товар відсутній
| BZT52B6V2-E3-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
товар відсутній
| BZT52B6V2-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
товар відсутній
| BZT52B6V2-G3-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
товар відсутній
| GF1M-E3/67A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; DO214BA; Ufmax: 1.2V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO214BA
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; DO214BA; Ufmax: 1.2V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO214BA
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 6643 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 26.82 грн |
| 18+ | 21.06 грн |
| 50+ | 16.83 грн |
| 75+ | 11.85 грн |
| 205+ | 11.25 грн |
| 1000+ | 10.87 грн |
| 1500+ | 10.79 грн |
| GF1M-E3/5CA |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; DO214BA; Ufmax: 1.2V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO214BA
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; DO214BA; Ufmax: 1.2V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO214BA
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| VSMA1094600 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 1425mW; 60°; SMD; 1000mA
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Optical power: 1425mW
Viewing angle: 60°
Mounting: SMD
Dimensions: 3.4x3.4x1.8mm
LED current: 1A
Operating voltage: 2.5...3.1V
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 1425mW; 60°; SMD; 1000mA
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Optical power: 1425mW
Viewing angle: 60°
Mounting: SMD
Dimensions: 3.4x3.4x1.8mm
LED current: 1A
Operating voltage: 2.5...3.1V
на замовлення 590 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 192.63 грн |
| 9+ | 104.91 грн |
| 24+ | 98.87 грн |
| MAL203690109E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø8.2x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Body dimensions: Ø8.2x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø8.2x11mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Body dimensions: Ø8.2x11mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...85°C
на замовлення 1031 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.46 грн |
| 31+ | 28.82 грн |
| 84+ | 27.24 грн |
| MAL204121109E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 160VDC; Ø8x18mm; ±20%; 5000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 160V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 5000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 160VDC; Ø8x18mm; ±20%; 5000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 160V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 5000h
Operating temperature: -40...85°C
товар відсутній
| MAL204215109E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 350VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 350V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Leads: axial
Service life: 15000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 350VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 350V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Leads: axial
Service life: 15000h
Operating temperature: -40...85°C
товар відсутній
| MAL204225109E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 350VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 350V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Leads: axial
Service life: 15000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 10uF; 350VDC; Ø12.5x30mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 10µF
Operating voltage: 350V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Leads: axial
Service life: 15000h
Operating temperature: -40...85°C
товар відсутній
| MBB02070C1402FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 14kΩ; 600mW; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 14kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 14kΩ; 600mW; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 14kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 6480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.26 грн |
| 180+ | 2.1 грн |
| 580+ | 1.52 грн |
| 1600+ | 1.43 грн |
| SMM02040D1402BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 14kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 14kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 14kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 14kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| AC04000001001JAC00 |
|
Виробник: VISHAY
Category: Other Resistors
Description: Resistor: wire-wound; THT; 1kΩ; 4W; ±5%; Ø5.5x16.5mm; -50÷250°C
Resistance: 1kΩ
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads dimensions: Ø0.8x25mm
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Leads: axial
Mounting: THT
Operating temperature: -50...250°C
Type of resistor: wire-wound
Power: 4W
Category: Other Resistors
Description: Resistor: wire-wound; THT; 1kΩ; 4W; ±5%; Ø5.5x16.5mm; -50÷250°C
Resistance: 1kΩ
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads dimensions: Ø0.8x25mm
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Leads: axial
Mounting: THT
Operating temperature: -50...250°C
Type of resistor: wire-wound
Power: 4W
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.4 грн |
| 25+ | 18.87 грн |
| 57+ | 15.71 грн |
| GBU4G-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 728 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 108.1 грн |
| 5+ | 90.57 грн |
| 13+ | 73.14 грн |
| 34+ | 69.16 грн |
| 260+ | 67.17 грн |
| GBU6G-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GBU8G-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 90.22 грн |
| 10+ | 74.72 грн |
| 15+ | 59.89 грн |
| 41+ | 56.63 грн |
| 100+ | 54.34 грн |
| VI40100G-E3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.81V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.81V
товар відсутній
| VI20100SG-E3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.07V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Case: I2PAK
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.07V
товар відсутній
| CRCW0805280RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 280Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 280Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 280Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 280Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 4200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.93 грн |
| 500+ | 0.95 грн |
| 1000+ | 0.58 грн |
| 4100+ | 0.22 грн |
| SMM02040D2800BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 280Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 280Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 280Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 280Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| BZM55C10-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; MicroMELF; single diode
Case: MicroMELF
Mounting: SMD
Manufacturer series: BZM55
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 2µA
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; MicroMELF; single diode
Case: MicroMELF
Mounting: SMD
Manufacturer series: BZM55
Power dissipation: 0.5W
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 2µA
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
на замовлення 12500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.69 грн |
| 31+ | 12.38 грн |
| 40+ | 9.63 грн |
| 100+ | 6.15 грн |
| 250+ | 4.57 грн |
| 484+ | 1.82 грн |
| 1328+ | 1.72 грн |
| BZM55C10-TR3 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
товар відсутній
| SIA517DJ-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ1206Y332KXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 3.3nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 3.3nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| HV1812Y332KXHATHV |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3nF; 3kV; X7R; ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.3nF
Operating voltage: 3kV
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3nF; 3kV; X7R; ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.3nF
Operating voltage: 3kV
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
товар відсутній