| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIJA52DP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 48W On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced |
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SUP53P06-20-E3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -46.8A Power dissipation: 66.7W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
на замовлення 611 шт: термін постачання 21-30 дні (днів) |
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DG445DY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; tube Type of integrated circuit: analog switch Output configuration: SPST-NO Number of channels: 4 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: tube Resistance: 50Ω |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
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DG445DY-T1-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: analog switch Output configuration: SPST-NO Number of channels: 4 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Resistance: 50Ω |
на замовлення 2609 шт: термін постачання 21-30 дні (днів) |
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| SIR403EDP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Pulsed drain current: -60A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhanced |
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VJ0603A1R2CXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603 Type of capacitor: ceramic Capacitance: 1.2pF Operating voltage: 100V Dielectric: C0G (NP0) Capacitance tolerance: ±0.25pF Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
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VJ0603A1R2CXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603 Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C Operating voltage: 50V Kind of capacitor: MLCC Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 1.2pF Capacitance tolerance: ±0.25pF |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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CRCW08055R11FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 5.11Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 5.11Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
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| IL213AT | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 100-130%@10mA Collector-emitter voltage: 30V Case: SOIC8 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: IL21XAT |
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| SUM85N15-19-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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| SUP85N15-21-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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TZMC33-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; MiniMELF,SOD80 Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Kind of package: reel; tape Case: MiniMELF; SOD80 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 7793 шт: термін постачання 21-30 дні (днів) |
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SIR422DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 70A Power dissipation: 22.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2585 шт: термін постачання 21-30 дні (днів) |
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SMM02040D8450BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 845Ω; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 845Ω Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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293D337X96R3D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 330uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 330µF Operating voltage: 6.3V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
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P6SMB22A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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P6SMB22CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Max. forward impulse current: 18.8A Breakdown voltage: 22V Technology: TransZorb® |
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| SQ4282EY-T1_BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
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BYT56M | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 80A Case: SOD64 Max. forward voltage: 1.4V Reverse recovery time: 100ns |
на замовлення 1176 шт: термін постачання 21-30 дні (днів) |
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| SI7862ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD |
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| SI7862ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD |
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| VJ2008Y102KXUSTX1 | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1nF; 250V; X7R; ±10%; SMD; 2008 Type of capacitor: ceramic Capacitance: 1nF Operating voltage: 250V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 2008 Case - mm: 5020 Operating temperature: -55...125°C |
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| VLDS1235G | VISHAY |
Category: Colour power LEDs - Emiter Description: Power LED; yellow; 11°; 70mA; λd: 626÷637nm; 2.3x2.3x2.8mm; SMD Type of diode: power LED LED colour: yellow Viewing angle: 11° LED current: 70mA Wavelength: 626...637nm Dimensions: 2.3x2.3x2.8mm Case: Gull wing Mounting: SMD Front: convex Operating voltage: 1.9...2.7V Luminosity: 5600...11000(typ)-22400mcd |
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020010030060020 | VISHAY |
Category: Colour power LEDs - Emiter Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD Dimensions: 2.3x2.3x2.8mm Mounting: SMD Case: Gull wing LED colour: yellow Type of diode: power LED Wavelength: 583...595nm Luminosity: 9000...18000(typ)-35500mcd LED current: 70mA Viewing angle: 11° Front: convex Operating voltage: 1.9...2.7V |
на замовлення 3371 шт: термін постачання 21-30 дні (днів) |
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| VLDY1235R | VISHAY |
Category: Colour power LEDs - Emiter Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD Type of diode: power LED Mounting: SMD Case: Gull wing LED colour: yellow Luminosity: 9000...18000(typ)-35500mcd Dimensions: 2.3x2.3x2.8mm Viewing angle: 11° LED current: 70mA Wavelength: 583...595nm Front: convex Operating voltage: 1.9...2.7V |
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VLMY235T2V1-GS08 | VISHAY |
Category: Colour power LEDs - Emiter Description: Power LED; yellow; 60°; 20mA; λd: 583÷594nm; 2.3x1.3x1.4mm; SMD Type of diode: power LED Mounting: SMD LED colour: yellow Wavelength: 583...594nm Luminosity: 355...900mcd LED current: 20mA Viewing angle: 60° Dimensions: 2.3x1.3x1.4mm Front: flat Operating voltage: 1.8...2.6V |
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| VJ0201Y102KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1nF; 16V; X7R; ±10%; SMD; 0201 Type of capacitor: ceramic Capacitance: 1nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...125°C |
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| GSC00AF1011VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 35VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x10mm Height: 10mm |
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| GSC00AF1011VTFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 35VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 8x10mm Height: 10mm |
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| SI4850BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Power dissipation: 4.5W On-state resistance: 25mΩ Drain current: 11.3A Drain-source voltage: 60V |
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SI4850EY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.5A; Idm: 40A Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Power dissipation: 3.3W On-state resistance: 47mΩ Drain current: 8.5A Drain-source voltage: 60V |
на замовлення 1233 шт: термін постачання 21-30 дні (днів) |
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| Si4874BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A Type of transistor: N-MOSFET Power dissipation: 3W On-state resistance: 8.5mΩ Drain current: 16A Drain-source voltage: 30V |
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| SI4894BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 2.5W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Power dissipation: 2.5W On-state resistance: 16mΩ Drain current: 12A Drain-source voltage: 30V |
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ZM4728A-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; DO213AB,MELF glass Type of diode: Zener Power dissipation: 1W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO213AB; MELF glass Semiconductor structure: single diode |
на замовлення 660 шт: термін постачання 21-30 дні (днів) |
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TEPT4400 | VISHAY |
Category: Phototransistors Description: Phototransistor; 3mm; λp max: 570nm; 6V; 30°; Lens: transparent Type of photoelement: phototransistor LED diameter: 3mm Wavelength of peak sensitivity: 570nm Collector-emitter voltage: 6V Viewing angle: 30° LED lens: transparent Mounting: THT Wavelength: 440...800nm |
на замовлення 3040 шт: термін постачання 21-30 дні (днів) |
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| VSMY2941GX01 | VISHAY |
Category: IR LEDs Description: IR transmitter; Gull wing; 940nm; transparent; 40mW; 8°; SMD; 70mA Operating voltage: 1.4...1.7V Type of diode: IR transmitter Wavelength: 940nm LED lens: transparent LED current: 70mA Viewing angle: 8° LED version: EMITER Dimensions: 2.3x2.3x2.8mm Optical power: 40mW Mounting: SMD Case: Gull wing |
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DG417DY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NC; Ch: 1; SO8; 7÷22V,13÷44V; tube Type of integrated circuit: analog switch Output configuration: SPST-NC Number of channels: 1 Case: SO8 Supply voltage: 7...22V; 13...44V Mounting: SMD Kind of package: tube Resistance: 35Ω |
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PR02000205609JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 56Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Mounting: THT Type of resistor: power metal Power: 2W Resistance: 56Ω Tolerance: ±5% Body dimensions: Ø3.9x12mm Temperature coefficient: 250ppm/°C Max. operating voltage: 500V Resistor features: high power and small dimension Leads: axial |
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PR03000205609JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 56Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 56Ω Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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P6SMB440A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 440V; 1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Technology: TransZorb® Mounting: SMD Max. off-state voltage: 376V Semiconductor structure: unidirectional Case: SMB Features of semiconductor devices: glass passivated Leakage current: 1µA Max. forward impulse current: 1A Kind of package: reel; tape Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 440V |
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P6SMB440A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 440V; 1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Technology: TransZorb® Mounting: SMD Max. off-state voltage: 376V Semiconductor structure: unidirectional Case: SMB Features of semiconductor devices: glass passivated Leakage current: 1µA Max. forward impulse current: 1A Kind of package: reel; tape Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 440V |
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CRCW06036K49FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 6.49kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 6.49kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 9500 шт: термін постачання 21-30 дні (днів) |
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CRCW12066K80FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 6.8kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 6.8kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
товар відсутній |
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CRCW12064K12FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 4.12kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 4.12kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 3600 шт: термін постачання 21-30 дні (днів) |
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SMM02040C4121FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 4.12kΩ; 0.4W; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 4.12kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 2452 шт: термін постачання 21-30 дні (днів) |
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| SI9433BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.2A Pulsed drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| VO615A-2X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO615A-3X007T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO615A-3X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO615A-4X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL; VDE Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO615A-9X007T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO615A-9X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL; VDE Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO615A-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| TSOP98556 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 56kHz; 2.5÷3.6V; 45° Viewing angle: 45° Type of photoelement: integrated IR receiver Mounting: THT Supply voltage: 2.5...3.6V Frequency: 56kHz |
товар відсутній |
| SIJA52DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUP53P06-20-E3 |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.17 грн |
| 9+ | 107.17 грн |
| 23+ | 101.13 грн |
| DG445DY-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Resistance: 50Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Resistance: 50Ω
на замовлення 890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 87.78 грн |
| 6+ | 73.21 грн |
| 10+ | 64.91 грн |
| 16+ | 56.6 грн |
| 44+ | 53.59 грн |
| DG445DY-T1-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 50Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Resistance: 50Ω
на замовлення 2609 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.47 грн |
| 10+ | 76.23 грн |
| 16+ | 56.6 грн |
| 44+ | 53.59 грн |
| SIR403EDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -60A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -60A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ0603A1R2CXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 1.2pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2pF; 100V; C0G (NP0); ±0.25pF; SMD; 0603
Type of capacitor: ceramic
Capacitance: 1.2pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Capacitance tolerance: ±0.25pF
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
товар відсутній
| VJ0603A1R2CXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Operating voltage: 50V
Kind of capacitor: MLCC
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1.2pF
Capacitance tolerance: ±0.25pF
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1.2pF; 50V; C0G (NP0); ±0.25pF; SMD; 0603
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Operating voltage: 50V
Kind of capacitor: MLCC
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 1.2pF
Capacitance tolerance: ±0.25pF
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 1.1 грн |
| 600+ | 0.73 грн |
| 1000+ | 0.47 грн |
| 2500+ | 0.36 грн |
| 4000+ | 0.33 грн |
| CRCW08055R11FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.11Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 5.11Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.11Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 5.11Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| IL213AT |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: IL21XAT
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: IL21XAT
товар відсутній
| SUM85N15-19-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUP85N15-21-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TZMC33-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; MiniMELF,SOD80
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: reel; tape
Case: MiniMELF; SOD80
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; MiniMELF,SOD80
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: reel; tape
Case: MiniMELF; SOD80
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.63 грн |
| 76+ | 4.98 грн |
| 147+ | 2.57 грн |
| 500+ | 1.83 грн |
| 743+ | 1.19 грн |
| 2042+ | 1.12 грн |
| SIR422DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.15 грн |
| 19+ | 49.06 грн |
| 50+ | 46.04 грн |
| SMM02040D8450BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 845Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 845Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 845Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 845Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| 293D337X96R3D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 330uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 330µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 330uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 330µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
товар відсутній
| P6SMB22A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| P6SMB22CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22V; 18.8A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Max. forward impulse current: 18.8A
Breakdown voltage: 22V
Technology: TransZorb®
товар відсутній
| SQ4282EY-T1_BE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 32A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BYT56M |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 80A; SOD64; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
на замовлення 1176 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 39.83 грн |
| 25+ | 35.17 грн |
| 31+ | 28.6 грн |
| 85+ | 27.02 грн |
| SI7862ADP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
товар відсутній
| SI7862ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W
Case: PowerPAK® SO8
Drain-source voltage: 16V
Drain current: 29A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
товар відсутній
| VJ2008Y102KXUSTX1 |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 250V; X7R; ±10%; SMD; 2008
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 250V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 2008
Case - mm: 5020
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 250V; X7R; ±10%; SMD; 2008
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 250V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 2008
Case - mm: 5020
Operating temperature: -55...125°C
товар відсутній
| VLDS1235G |
|
Виробник: VISHAY
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 626÷637nm; 2.3x2.3x2.8mm; SMD
Type of diode: power LED
LED colour: yellow
Viewing angle: 11°
LED current: 70mA
Wavelength: 626...637nm
Dimensions: 2.3x2.3x2.8mm
Case: Gull wing
Mounting: SMD
Front: convex
Operating voltage: 1.9...2.7V
Luminosity: 5600...11000(typ)-22400mcd
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 626÷637nm; 2.3x2.3x2.8mm; SMD
Type of diode: power LED
LED colour: yellow
Viewing angle: 11°
LED current: 70mA
Wavelength: 626...637nm
Dimensions: 2.3x2.3x2.8mm
Case: Gull wing
Mounting: SMD
Front: convex
Operating voltage: 1.9...2.7V
Luminosity: 5600...11000(typ)-22400mcd
товар відсутній
| 020010030060020 |
|
Виробник: VISHAY
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD
Dimensions: 2.3x2.3x2.8mm
Mounting: SMD
Case: Gull wing
LED colour: yellow
Type of diode: power LED
Wavelength: 583...595nm
Luminosity: 9000...18000(typ)-35500mcd
LED current: 70mA
Viewing angle: 11°
Front: convex
Operating voltage: 1.9...2.7V
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD
Dimensions: 2.3x2.3x2.8mm
Mounting: SMD
Case: Gull wing
LED colour: yellow
Type of diode: power LED
Wavelength: 583...595nm
Luminosity: 9000...18000(typ)-35500mcd
LED current: 70mA
Viewing angle: 11°
Front: convex
Operating voltage: 1.9...2.7V
на замовлення 3371 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.2 грн |
| 18+ | 21.43 грн |
| 25+ | 17.96 грн |
| 79+ | 11.25 грн |
| 216+ | 10.64 грн |
| 1800+ | 10.26 грн |
| VLDY1235R |
|
Виробник: VISHAY
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD
Type of diode: power LED
Mounting: SMD
Case: Gull wing
LED colour: yellow
Luminosity: 9000...18000(typ)-35500mcd
Dimensions: 2.3x2.3x2.8mm
Viewing angle: 11°
LED current: 70mA
Wavelength: 583...595nm
Front: convex
Operating voltage: 1.9...2.7V
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 11°; 70mA; λd: 583÷595nm; 2.3x2.3x2.8mm; SMD
Type of diode: power LED
Mounting: SMD
Case: Gull wing
LED colour: yellow
Luminosity: 9000...18000(typ)-35500mcd
Dimensions: 2.3x2.3x2.8mm
Viewing angle: 11°
LED current: 70mA
Wavelength: 583...595nm
Front: convex
Operating voltage: 1.9...2.7V
товар відсутній
| VLMY235T2V1-GS08 |
|
Виробник: VISHAY
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 60°; 20mA; λd: 583÷594nm; 2.3x1.3x1.4mm; SMD
Type of diode: power LED
Mounting: SMD
LED colour: yellow
Wavelength: 583...594nm
Luminosity: 355...900mcd
LED current: 20mA
Viewing angle: 60°
Dimensions: 2.3x1.3x1.4mm
Front: flat
Operating voltage: 1.8...2.6V
Category: Colour power LEDs - Emiter
Description: Power LED; yellow; 60°; 20mA; λd: 583÷594nm; 2.3x1.3x1.4mm; SMD
Type of diode: power LED
Mounting: SMD
LED colour: yellow
Wavelength: 583...594nm
Luminosity: 355...900mcd
LED current: 20mA
Viewing angle: 60°
Dimensions: 2.3x1.3x1.4mm
Front: flat
Operating voltage: 1.8...2.6V
товар відсутній
| VJ0201Y102KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 16V; X7R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 16V; X7R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 1nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
товар відсутній
| GSC00AF1011VARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
товар відсутній
| GSC00AF1011VTFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 8x10mm
Height: 10mm
товар відсутній
| SI4850BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 4.5W
On-state resistance: 25mΩ
Drain current: 11.3A
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 4.5W
On-state resistance: 25mΩ
Drain current: 11.3A
Drain-source voltage: 60V
товар відсутній
| SI4850EY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.5A; Idm: 40A
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 3.3W
On-state resistance: 47mΩ
Drain current: 8.5A
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.5A; Idm: 40A
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 3.3W
On-state resistance: 47mΩ
Drain current: 8.5A
Drain-source voltage: 60V
на замовлення 1233 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.23 грн |
| 26+ | 34.34 грн |
| 71+ | 32.53 грн |
| Si4874BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
Type of transistor: N-MOSFET
Power dissipation: 3W
On-state resistance: 8.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
Type of transistor: N-MOSFET
Power dissipation: 3W
On-state resistance: 8.5mΩ
Drain current: 16A
Drain-source voltage: 30V
товар відсутній
| SI4894BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
On-state resistance: 16mΩ
Drain current: 12A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
On-state resistance: 16mΩ
Drain current: 12A
Drain-source voltage: 30V
товар відсутній
| ZM4728A-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; DO213AB,MELF glass
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; DO213AB,MELF glass
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO213AB; MELF glass
Semiconductor structure: single diode
на замовлення 660 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.38 грн |
| 26+ | 14.94 грн |
| 50+ | 11.17 грн |
| 100+ | 9.96 грн |
| 116+ | 7.66 грн |
| 317+ | 7.24 грн |
| TEPT4400 |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 570nm; 6V; 30°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
Wavelength of peak sensitivity: 570nm
Collector-emitter voltage: 6V
Viewing angle: 30°
LED lens: transparent
Mounting: THT
Wavelength: 440...800nm
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 570nm; 6V; 30°; Lens: transparent
Type of photoelement: phototransistor
LED diameter: 3mm
Wavelength of peak sensitivity: 570nm
Collector-emitter voltage: 6V
Viewing angle: 30°
LED lens: transparent
Mounting: THT
Wavelength: 440...800nm
на замовлення 3040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 45.52 грн |
| 15+ | 26.11 грн |
| 50+ | 21.13 грн |
| 60+ | 14.87 грн |
| 164+ | 14.04 грн |
| VSMY2941GX01 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; Gull wing; 940nm; transparent; 40mW; 8°; SMD; 70mA
Operating voltage: 1.4...1.7V
Type of diode: IR transmitter
Wavelength: 940nm
LED lens: transparent
LED current: 70mA
Viewing angle: 8°
LED version: EMITER
Dimensions: 2.3x2.3x2.8mm
Optical power: 40mW
Mounting: SMD
Case: Gull wing
Category: IR LEDs
Description: IR transmitter; Gull wing; 940nm; transparent; 40mW; 8°; SMD; 70mA
Operating voltage: 1.4...1.7V
Type of diode: IR transmitter
Wavelength: 940nm
LED lens: transparent
LED current: 70mA
Viewing angle: 8°
LED version: EMITER
Dimensions: 2.3x2.3x2.8mm
Optical power: 40mW
Mounting: SMD
Case: Gull wing
товар відсутній
| DG417DY-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 1; SO8; 7÷22V,13÷44V; tube
Type of integrated circuit: analog switch
Output configuration: SPST-NC
Number of channels: 1
Case: SO8
Supply voltage: 7...22V; 13...44V
Mounting: SMD
Kind of package: tube
Resistance: 35Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 1; SO8; 7÷22V,13÷44V; tube
Type of integrated circuit: analog switch
Output configuration: SPST-NC
Number of channels: 1
Case: SO8
Supply voltage: 7...22V; 13...44V
Mounting: SMD
Kind of package: tube
Resistance: 35Ω
товар відсутній
| PR02000205609JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 56Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Type of resistor: power metal
Power: 2W
Resistance: 56Ω
Tolerance: ±5%
Body dimensions: Ø3.9x12mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Resistor features: high power and small dimension
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 56Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Type of resistor: power metal
Power: 2W
Resistance: 56Ω
Tolerance: ±5%
Body dimensions: Ø3.9x12mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 500V
Resistor features: high power and small dimension
Leads: axial
товар відсутній
| PR03000205609JAC00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 56Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 56Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 56Ω; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 56Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| P6SMB440A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 440V; 1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Technology: TransZorb®
Mounting: SMD
Max. off-state voltage: 376V
Semiconductor structure: unidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 440V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 440V; 1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Technology: TransZorb®
Mounting: SMD
Max. off-state voltage: 376V
Semiconductor structure: unidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 440V
товар відсутній
| P6SMB440A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 440V; 1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Technology: TransZorb®
Mounting: SMD
Max. off-state voltage: 376V
Semiconductor structure: unidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 440V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 440V; 1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Technology: TransZorb®
Mounting: SMD
Max. off-state voltage: 376V
Semiconductor structure: unidirectional
Case: SMB
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 440V
товар відсутній
| CRCW06036K49FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 6.49kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.49kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 6.49kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.49kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 9500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.82 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.52 грн |
| 4000+ | 0.22 грн |
| 5000+ | 0.21 грн |
| CRCW12066K80FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 6.8kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 6.8kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 6.8kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 6.8kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
товар відсутній
| CRCW12064K12FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.12kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.12kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.12kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.12kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 3600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| 2300+ | 0.38 грн |
| SMM02040C4121FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 4.12kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 4.12kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 4.12kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 4.12kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 2452 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.19 грн |
| 200+ | 1.92 грн |
| 500+ | 1.19 грн |
| 925+ | 0.96 грн |
| SI9433BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.2A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.2A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VO615A-2X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO615A-3X007T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO615A-3X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO615A-4X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO615A-9X007T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO615A-9X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO615A-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній