SI4386DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 94.15 грн |
10+ | 74.48 грн |
100+ | 57.97 грн |
500+ | 46.11 грн |
1000+ | 37.56 грн |
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Технічний опис SI4386DY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V.
Інші пропозиції SI4386DY-T1-GE3 за ціною від 46.11 грн до 105.74 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SI4386DY-T1-GE3 | Виробник : Vishay / Siliconix | MOSFETs 30V 16A 3.1W 7.0mohm @ 10V |
на замовлення 2228 шт: термін постачання 21-30 дні (днів) |
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SI4386DY-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R |
товар відсутній |
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SI4386DY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 9.5mΩ Drain current: 16A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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SI4386DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
товар відсутній |
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SI4386DY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W Technology: TrenchFET® Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 9.5mΩ Drain current: 16A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET |
товар відсутній |