| Фото | Назва | Виробник | Інформація |
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VJ0805A391JXACW1BC | VISHAY |
 Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 390pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 390pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805A391JXEAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 390pF; 500V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 390pF Operating voltage: 500V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805Y391KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 390pF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 390pF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ1206A391JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 390pF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Capacitance: 390pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1206Y391KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 390pF; 100V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 390pF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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| SIR1309DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Power dissipation: 56.8W Polarisation: unipolar Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -150A Drain-source voltage: -30V Drain current: -65.7A On-state resistance: 13mΩ Type of transistor: P-MOSFET |
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MMA02040C3329FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 33.2Ω; 0.4W; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 33.2Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
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CNY65 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 8kV; Uce: 32V; 4pin Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 8kV CTR@If: 50-300%@10mA Collector-emitter voltage: 32V Case: 4pin Turn-on time: 5µs Turn-off time: 5µs |
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CNY65ST | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 13.9kV; Uce: 32V Turn-on time: 5µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 13.9kV CTR@If: 50-300%@5mA Type of optocoupler: optocoupler Mounting: THT Case: 4pin Collector-emitter voltage: 32V |
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CNY66 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 8.3kV; Uce: 32V Mounting: THT Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 8.3kV CTR@If: 50-300%@10mA Type of optocoupler: optocoupler Case: 4pin Collector-emitter voltage: 32V |
на замовлення 679 шт: термін постачання 21-30 дні (днів) |
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CNY66B | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 13.9kV; Uce: 32V Mounting: THT Turn-on time: 5µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 13.9kV CTR@If: 100-200%@5mA Type of optocoupler: optocoupler Case: 4pin Collector-emitter voltage: 32V |
на замовлення 1149 шт: термін постачання 21-30 дні (днів) |
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CRCW120621K5FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 21.5kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 21.5kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 4400 шт: термін постачання 21-30 дні (днів) |
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VJ0402A680KXXPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 68pF; 25V; C0G (NP0); ±10%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 68pF Operating voltage: 25V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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CRCW1206825RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 825Ω; 0.25W; ±1%; -55÷155°C Max. operating voltage: 200V Case - mm: 3216 Case - inch: 1206 Type of resistor: thick film Mounting: SMD Power: 0.25W Resistance: 825Ω Tolerance: ±1% Operating temperature: -55...155°C |
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SMM02040C1303FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 130kΩ; 0.4W; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 130kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 328 шт: термін постачання 21-30 дні (днів) |
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MBB02070C1303FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 130kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 130kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
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MBB02070C1303FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 130kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 130kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
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MRS25000C2871FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 2.87kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 2.87kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
на замовлення 6041 шт: термін постачання 21-30 дні (днів) |
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SMM02040D2871BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.87kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 2.87kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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SMM02040D2989BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 29.8Ω; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 29.8Ω Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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CRCW040220K0JNED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 20kΩ; 62.5mW; ±5%; -55÷155°C Mounting: SMD Case - inch: 0402 Case - mm: 1005 Power: 62.5mW Operating temperature: -55...155°C Tolerance: ±5% Type of resistor: thick film Resistance: 20kΩ Max. operating voltage: 50V |
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CRCW0402220KFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 220kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 220kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 9500 шт: термін постачання 21-30 дні (днів) |
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SMBJ9.0A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 39A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10V Max. forward impulse current: 39A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 1396 шт: термін постачання 21-30 дні (днів) |
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SMBJ9.0D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.2V; 39.7A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.2V Max. forward impulse current: 39.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 3740 шт: термін постачання 21-30 дні (днів) |
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| TLHO4200 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; orange; 4÷10mcd; 22°; Front: convex; 2.4÷3V; No.of term: 2 Type of diode: LED LED diameter: 3mm LED colour: orange Luminosity: 4...10mcd Viewing angle: 22° Wavelength: 598...611nm LED lens: orange LED current: 10mA Mounting: THT Front: convex Number of terminals: 2 Terminal pitch: 2.54mm Operating voltage: 2.4...3V |
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593D157X96R3C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 150uF; 6.3VDC; SMD; C; 2312; ±10% Kind of capacitor: low ESR Capacitors series: Tantamount Mounting: SMD Capacitance: 150µF Case - inch: 2312 Case - mm: 6032 Case: C Type of capacitor: tantalum Operating temperature: -55...125°C ESR value: 0.2Ω Tolerance: ±10% Operating voltage: 6.3V DC |
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| TLWR8900 | VISHAY |
Category: THT LEDs Super Flux Description: LED Super Flux; 7.62x7.62mm; red; 2000÷3700mcd; 45°; Front: convex Type of diode: LED Super Flux Dimensions: 7.62x7.62mm LED colour: red Luminosity: 2000...3700mcd Viewing angle: 45° Wavelength: 611...634nm LED lens: transparent Mounting: THT Front: convex LED current: 70mA Number of terminals: 4 LED diameter: 3mm Case: TELUX Version: Power Operating voltage: 1.83...2.67V |
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SMBJ64A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 74.85V; 5.8A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 74.85V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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SMBJ64D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 72.2V; 5.88A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 72.2V Max. forward impulse current: 5.88A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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| SI7386DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 5W On-state resistance: 9.5mΩ Drain current: 19A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET |
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| SI7386DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 5W On-state resistance: 9.5mΩ Drain current: 19A Drain-source voltage: 30V Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 50A Gate charge: 18nC Type of transistor: N-MOSFET |
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CRCW08052K87FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 2.87kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 2.87kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 12700 шт: термін постачання 21-30 дні (днів) |
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BYT52M | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 200ns |
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BYT52M-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 200ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: SOD57 Max. forward voltage: 1.3V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: Ammo Pack |
на замовлення 8295 шт: термін постачання 21-30 дні (днів) |
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BZM55C39-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 39V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZM55 |
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BZM55C39-TR3 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 39V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZM55 |
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BZM55C62-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: BZM55 |
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BZM55C62-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: BZM55 |
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BZM55C62-TR3 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: BZM55 |
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BYW34-TR | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; reel; Ifsm: 50A; SOD57; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: reel Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 200ns |
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| KMKP 900-3.3IA | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 3.3uF; Ø35x82mm; ±10%; 900VAC; 16A Type of capacitor: polypropylene Capacitance: 3.3µF Body dimensions: Ø35x82mm Tolerance: ±10% Operating voltage: 900V AC Max. operating current: 16A |
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LL46-GS08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 100V; 0.15A; MiniMELF,SOD80 Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: MiniMELF; SOD80 Kind of package: reel; tape Max. forward impulse current: 4A |
на замовлення 29060 шт: термін постачання 21-30 дні (днів) |
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SI2342DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate charge: 15.8nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 30A Power dissipation: 1.6W Drain-source voltage: 8V Drain current: 6A On-state resistance: 17mΩ Type of transistor: N-MOSFET |
на замовлення 2951 шт: термін постачання 21-30 дні (днів) |
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| SI8416DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 16A Pulsed drain current: 20A Power dissipation: 13W Gate-source voltage: ±5V On-state resistance: 95mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIA414DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 40A Power dissipation: 19W Drain-source voltage: 8V Drain current: 12A On-state resistance: 41mΩ Type of transistor: N-MOSFET |
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| SIA436DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 25.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 50A Power dissipation: 19W Drain-source voltage: 8V Drain current: 12A On-state resistance: 36mΩ Type of transistor: N-MOSFET |
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| SIB417EDK-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -15A Power dissipation: 13W Drain-source voltage: -8V Drain current: -9A On-state resistance: 0.25Ω Type of transistor: P-MOSFET |
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| SI8466EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 20A Power dissipation: 1.8W Drain-source voltage: 8V Drain current: 5.4A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
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| SiUD412ED-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 0.71nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 1.5A Power dissipation: 1.25W Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 2.5Ω Type of transistor: N-MOSFET |
товар відсутній |
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| SI1050X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 1.34A Pulsed drain current: 6A Power dissipation: 236mW Case: SC89; SOT563 Gate-source voltage: ±5V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SI1034X-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.19A Pulsed drain current: 0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±5V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| VO3120-X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5.3kV Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 0.1µs Turn-off time: 0.1µs Max. off-state voltage: 5V Manufacturer series: VO3120 |
товар відсутній |
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| VOW3120-X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5.3kV Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 0.1µs Turn-off time: 0.1µs Max. off-state voltage: 5V Manufacturer series: VOW3120 |
товар відсутній |
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 |
SFH691AT | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Type of optocoupler: optocoupler Insulation voltage: 3.75kV Kind of output: transistor Case: SOP4 Mounting: SMD Number of channels: 1 Turn-on time: 5µs Turn-off time: 3µs Collector-emitter voltage: 70V CTR@If: 50-300%@5mA |
на замовлення 1349 шт: термін постачання 21-30 дні (днів) |
|
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| Si6954ADQ-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 20A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SI6954ADQ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 20A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIHG460B-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 62A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| VLMB1501-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0402; blue; 22.4÷28(typ)-71mcd; 1x0.5x0.35mm; 65°; 5mA LED colour: blue Type of diode: LED Wavelength: 470...475nm Luminosity: 22.4...28(typ)-71mcd LED current: 5mA Viewing angle: 65° Dimensions: 1x0.5x0.35mm Front: flat Mounting: SMD Case: 0402 Operating voltage: 2.65...3.15V |
товар відсутній |
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 |
VJ0603Y153KXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 15nF; 100V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 15nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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| SISS30LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 80V Drain current: 44A On-state resistance: 12.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 50nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A |
товар відсутній |
| VJ0805A391JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805A391JXEAT |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805Y391KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ1206A391JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206Y391KXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 390pF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 390pF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| SIR1309DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
товар відсутній
| MMA02040C3329FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 33.2Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 33.2Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 33.2Ω; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 33.2Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
товар відсутній
| CNY65 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 8kV; Uce: 32V; 4pin
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 8kV
CTR@If: 50-300%@10mA
Collector-emitter voltage: 32V
Case: 4pin
Turn-on time: 5µs
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 8kV; Uce: 32V; 4pin
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 8kV
CTR@If: 50-300%@10mA
Collector-emitter voltage: 32V
Case: 4pin
Turn-on time: 5µs
Turn-off time: 5µs
товар відсутній
| CNY65ST |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 13.9kV; Uce: 32V
Turn-on time: 5µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 13.9kV
CTR@If: 50-300%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: 4pin
Collector-emitter voltage: 32V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 13.9kV; Uce: 32V
Turn-on time: 5µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 13.9kV
CTR@If: 50-300%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: 4pin
Collector-emitter voltage: 32V
товар відсутній
| CNY66 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 8.3kV; Uce: 32V
Mounting: THT
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 8.3kV
CTR@If: 50-300%@10mA
Type of optocoupler: optocoupler
Case: 4pin
Collector-emitter voltage: 32V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 8.3kV; Uce: 32V
Mounting: THT
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 8.3kV
CTR@If: 50-300%@10mA
Type of optocoupler: optocoupler
Case: 4pin
Collector-emitter voltage: 32V
на замовлення 679 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.55 грн |
| 10+ | 104.91 грн |
| 11+ | 83.77 грн |
| 29+ | 79.25 грн |
| CNY66B |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 13.9kV; Uce: 32V
Mounting: THT
Turn-on time: 5µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 13.9kV
CTR@If: 100-200%@5mA
Type of optocoupler: optocoupler
Case: 4pin
Collector-emitter voltage: 32V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 13.9kV; Uce: 32V
Mounting: THT
Turn-on time: 5µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 13.9kV
CTR@If: 100-200%@5mA
Type of optocoupler: optocoupler
Case: 4pin
Collector-emitter voltage: 32V
на замовлення 1149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.23 грн |
| 10+ | 107.17 грн |
| 11+ | 82.26 грн |
| 30+ | 77.74 грн |
| CRCW120621K5FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 21.5kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 21.5kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 21.5kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 21.5kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 4400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| 2300+ | 0.39 грн |
| VJ0402A680KXXPW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68pF; 25V; C0G (NP0); ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 68pF; 25V; C0G (NP0); ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 68pF
Operating voltage: 25V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| CRCW1206825RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 825Ω; 0.25W; ±1%; -55÷155°C
Max. operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Type of resistor: thick film
Mounting: SMD
Power: 0.25W
Resistance: 825Ω
Tolerance: ±1%
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 825Ω; 0.25W; ±1%; -55÷155°C
Max. operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Type of resistor: thick film
Mounting: SMD
Power: 0.25W
Resistance: 825Ω
Tolerance: ±1%
Operating temperature: -55...155°C
товар відсутній
| SMM02040C1303FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 130kΩ; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 130kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 130kΩ; 0.4W; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 130kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 17.07 грн |
| 35+ | 10.87 грн |
| 45+ | 8.53 грн |
| 64+ | 5.92 грн |
| 84+ | 4.51 грн |
| 108+ | 3.52 грн |
| MBB02070C1303FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 130kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 130kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 130kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 130kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
товар відсутній
| MBB02070C1303FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 130kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 130kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 130kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 130kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
товар відсутній
| MRS25000C2871FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.87kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 2.87kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 2.87kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 2.87kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
на замовлення 6041 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 13 грн |
| 50+ | 7.7 грн |
| 63+ | 6.01 грн |
| 100+ | 4.6 грн |
| 250+ | 3.3 грн |
| 500+ | 2.69 грн |
| 690+ | 1.28 грн |
| 1897+ | 1.21 грн |
| SMM02040D2871BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.87kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 2.87kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 2.87kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 2.87kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| SMM02040D2989BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 29.8Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 29.8Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 29.8Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 29.8Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| CRCW040220K0JNED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 20kΩ; 62.5mW; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Power: 62.5mW
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Resistance: 20kΩ
Max. operating voltage: 50V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 20kΩ; 62.5mW; ±5%; -55÷155°C
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Power: 62.5mW
Operating temperature: -55...155°C
Tolerance: ±5%
Type of resistor: thick film
Resistance: 20kΩ
Max. operating voltage: 50V
товар відсутній
| CRCW0402220KFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 220kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 220kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 220kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 220kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 9500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.98 грн |
| 1000+ | 0.4 грн |
| 4800+ | 0.18 грн |
| SMBJ9.0A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 39A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 39A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 1396 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 26.01 грн |
| 21+ | 18.64 грн |
| 28+ | 13.89 грн |
| 100+ | 7.92 грн |
| 149+ | 5.93 грн |
| 409+ | 5.61 грн |
| 750+ | 5.51 грн |
| SMBJ9.0D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.2V; 39.7A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.2V
Max. forward impulse current: 39.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.2V; 39.7A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.2V
Max. forward impulse current: 39.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 3740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.74 грн |
| 61+ | 6.26 грн |
| 100+ | 5.58 грн |
| 190+ | 4.61 грн |
| 523+ | 4.35 грн |
| TLHO4200 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; orange; 4÷10mcd; 22°; Front: convex; 2.4÷3V; No.of term: 2
Type of diode: LED
LED diameter: 3mm
LED colour: orange
Luminosity: 4...10mcd
Viewing angle: 22°
Wavelength: 598...611nm
LED lens: orange
LED current: 10mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
Category: THT LEDs Round
Description: LED; 3mm; orange; 4÷10mcd; 22°; Front: convex; 2.4÷3V; No.of term: 2
Type of diode: LED
LED diameter: 3mm
LED colour: orange
Luminosity: 4...10mcd
Viewing angle: 22°
Wavelength: 598...611nm
LED lens: orange
LED current: 10mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 2.4...3V
товар відсутній
| 593D157X96R3C2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 150uF; 6.3VDC; SMD; C; 2312; ±10%
Kind of capacitor: low ESR
Capacitors series: Tantamount
Mounting: SMD
Capacitance: 150µF
Case - inch: 2312
Case - mm: 6032
Case: C
Type of capacitor: tantalum
Operating temperature: -55...125°C
ESR value: 0.2Ω
Tolerance: ±10%
Operating voltage: 6.3V DC
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 150uF; 6.3VDC; SMD; C; 2312; ±10%
Kind of capacitor: low ESR
Capacitors series: Tantamount
Mounting: SMD
Capacitance: 150µF
Case - inch: 2312
Case - mm: 6032
Case: C
Type of capacitor: tantalum
Operating temperature: -55...125°C
ESR value: 0.2Ω
Tolerance: ±10%
Operating voltage: 6.3V DC
товар відсутній
| TLWR8900 |
|
Виробник: VISHAY
Category: THT LEDs Super Flux
Description: LED Super Flux; 7.62x7.62mm; red; 2000÷3700mcd; 45°; Front: convex
Type of diode: LED Super Flux
Dimensions: 7.62x7.62mm
LED colour: red
Luminosity: 2000...3700mcd
Viewing angle: 45°
Wavelength: 611...634nm
LED lens: transparent
Mounting: THT
Front: convex
LED current: 70mA
Number of terminals: 4
LED diameter: 3mm
Case: TELUX
Version: Power
Operating voltage: 1.83...2.67V
Category: THT LEDs Super Flux
Description: LED Super Flux; 7.62x7.62mm; red; 2000÷3700mcd; 45°; Front: convex
Type of diode: LED Super Flux
Dimensions: 7.62x7.62mm
LED colour: red
Luminosity: 2000...3700mcd
Viewing angle: 45°
Wavelength: 611...634nm
LED lens: transparent
Mounting: THT
Front: convex
LED current: 70mA
Number of terminals: 4
LED diameter: 3mm
Case: TELUX
Version: Power
Operating voltage: 1.83...2.67V
товар відсутній
| SMBJ64A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 74.85V; 5.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 74.85V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 74.85V; 5.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 74.85V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SMBJ64D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 72.2V; 5.88A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 72.2V
Max. forward impulse current: 5.88A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 72.2V; 5.88A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 72.2V
Max. forward impulse current: 5.88A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SI7386DP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
товар відсутній
| SI7386DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 19A; Idm: 50A; 5W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 5W
On-state resistance: 9.5mΩ
Drain current: 19A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
товар відсутній
| CRCW08052K87FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.87kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.87kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.87kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.87kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 12700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.93 грн |
| 500+ | 0.95 грн |
| 1000+ | 0.58 грн |
| 4100+ | 0.22 грн |
| 5000+ | 0.2 грн |
| BYT52M |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 200ns
товар відсутній
| BYT52M-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 200ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SOD57
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 200ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Case: SOD57
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: Ammo Pack
на замовлення 8295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 23 грн |
| 20+ | 18.94 грн |
| 50+ | 17.13 грн |
| 58+ | 15.32 грн |
| 159+ | 14.49 грн |
| 1000+ | 14.26 грн |
| BZM55C39-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 39V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 39V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZM55
товар відсутній
| BZM55C39-TR3 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 39V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 39V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZM55
товар відсутній
| BZM55C62-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZM55
товар відсутній
| BZM55C62-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZM55
товар відсутній
| BZM55C62-TR3 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 62V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZM55
товар відсутній
| BYW34-TR |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; reel; Ifsm: 50A; SOD57; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: reel
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; reel; Ifsm: 50A; SOD57; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: reel
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.1V
Leakage current: 0.15mA
Reverse recovery time: 200ns
товар відсутній
| KMKP 900-3.3IA |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 3.3uF; Ø35x82mm; ±10%; 900VAC; 16A
Type of capacitor: polypropylene
Capacitance: 3.3µF
Body dimensions: Ø35x82mm
Tolerance: ±10%
Operating voltage: 900V AC
Max. operating current: 16A
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 3.3uF; Ø35x82mm; ±10%; 900VAC; 16A
Type of capacitor: polypropylene
Capacitance: 3.3µF
Body dimensions: Ø35x82mm
Tolerance: ±10%
Operating voltage: 900V AC
Max. operating current: 16A
товар відсутній
| LL46-GS08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 100V; 0.15A; MiniMELF,SOD80
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: MiniMELF; SOD80
Kind of package: reel; tape
Max. forward impulse current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 100V; 0.15A; MiniMELF,SOD80
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: MiniMELF; SOD80
Kind of package: reel; tape
Max. forward impulse current: 4A
на замовлення 29060 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.12 грн |
| 100+ | 4.08 грн |
| 260+ | 3.37 грн |
| 720+ | 3.18 грн |
| 10000+ | 3.17 грн |
| SI2342DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 30A
Power dissipation: 1.6W
Drain-source voltage: 8V
Drain current: 6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15.8nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 30A
Power dissipation: 1.6W
Drain-source voltage: 8V
Drain current: 6A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
на замовлення 2951 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 33.32 грн |
| 15+ | 25.81 грн |
| 25+ | 22.94 грн |
| 66+ | 13.28 грн |
| 181+ | 12.53 грн |
| 1000+ | 12.38 грн |
| SI8416DB-T2-E1 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 16A
Pulsed drain current: 20A
Power dissipation: 13W
Gate-source voltage: ±5V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 16A
Pulsed drain current: 20A
Power dissipation: 13W
Gate-source voltage: ±5V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIA414DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
товар відсутній
| SIA436DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
товар відсутній
| SIB417EDK-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -15A
Power dissipation: 13W
Drain-source voltage: -8V
Drain current: -9A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -15A
Power dissipation: 13W
Drain-source voltage: -8V
Drain current: -9A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
товар відсутній
| SI8466EDB-T2-E1 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Power dissipation: 1.8W
Drain-source voltage: 8V
Drain current: 5.4A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 20A
Power dissipation: 1.8W
Drain-source voltage: 8V
Drain current: 5.4A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
товар відсутній
| SiUD412ED-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 0.71nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 1.5A
Power dissipation: 1.25W
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 0.71nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 1.5A
Power dissipation: 1.25W
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
товар відсутній
| SI1050X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 236mW
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 1.34A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 236mW
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI1034X-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.19A
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.19A
Pulsed drain current: 0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±5V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VO3120-X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3120
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VO3120
товар відсутній
| VOW3120-X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VOW3120
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; Uinsul: 5.3kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5.3kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.1µs
Turn-off time: 0.1µs
Max. off-state voltage: 5V
Manufacturer series: VOW3120
товар відсутній
| SFH691AT |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: transistor
Case: SOP4
Mounting: SMD
Number of channels: 1
Turn-on time: 5µs
Turn-off time: 3µs
Collector-emitter voltage: 70V
CTR@If: 50-300%@5mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: transistor
Case: SOP4
Mounting: SMD
Number of channels: 1
Turn-on time: 5µs
Turn-off time: 3µs
Collector-emitter voltage: 70V
CTR@If: 50-300%@5mA
на замовлення 1349 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.77 грн |
| 10+ | 39.92 грн |
| 40+ | 21.96 грн |
| 110+ | 20.75 грн |
| Si6954ADQ-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI6954ADQ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 20A
Power dissipation: 1W
Case: TSSOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHG460B-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 62A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 62A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| VLMB1501-GS08 |
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0402; blue; 22.4÷28(typ)-71mcd; 1x0.5x0.35mm; 65°; 5mA
LED colour: blue
Type of diode: LED
Wavelength: 470...475nm
Luminosity: 22.4...28(typ)-71mcd
LED current: 5mA
Viewing angle: 65°
Dimensions: 1x0.5x0.35mm
Front: flat
Mounting: SMD
Case: 0402
Operating voltage: 2.65...3.15V
Category: SMD colour LEDs
Description: LED; SMD; 0402; blue; 22.4÷28(typ)-71mcd; 1x0.5x0.35mm; 65°; 5mA
LED colour: blue
Type of diode: LED
Wavelength: 470...475nm
Luminosity: 22.4...28(typ)-71mcd
LED current: 5mA
Viewing angle: 65°
Dimensions: 1x0.5x0.35mm
Front: flat
Mounting: SMD
Case: 0402
Operating voltage: 2.65...3.15V
товар відсутній
| VJ0603Y153KXBAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 15nF; 100V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 15nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 15nF; 100V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 15nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.65 грн |
| 100+ | 4.49 грн |
| 320+ | 2.83 грн |
| 860+ | 2.68 грн |
| SISS30LDN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 44A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 44A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
товар відсутній