Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (63080) > Сторінка 597 з 1052
Фото | Назва | Виробник | Інформація |
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TSD30H100CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 30A; D2PAK Mounting: SMD Type of diode: Schottky rectifying Max. forward voltage: 0.78V Max. off-state voltage: 100V Case: D2PAK Semiconductor structure: common cathode; double Max. forward impulse current: 200A Load current: 30A кількість в упаковці: 1 шт |
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TSD30H120CW MNG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK Mounting: SMD Max. off-state voltage: 120V Load current: 30A Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying Max. forward impulse current: 200A Max. forward voltage: 0.84V кількість в упаковці: 1 шт |
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TSD30H150CW MNG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 150V; 30A; D2PAK Mounting: SMD Case: D2PAK Max. forward impulse current: 200A Semiconductor structure: common cathode; double Load current: 30A Max. forward voltage: 0.9V Type of diode: Schottky rectifying Max. off-state voltage: 150V кількість в упаковці: 1 шт |
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TSF40H100C C0G | TAIWAN SEMICONDUCTOR | TSF40H100C-C0G THT Schottky diodes |
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TSF40H200C C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 250A Max. forward voltage: 0.8V кількість в упаковці: 1 шт |
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TSM025NB04CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 113nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM025NB04LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 112nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM033NB04CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 77nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V кількість в упаковці: 1 шт |
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TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 79nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V кількість в упаковці: 1 шт |
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Mounting: SMD Drain-source voltage: 30V Drain current: 30A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 7W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SOP8 кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Mounting: SMD On-state resistance: 5mΩ Type of transistor: N-MOSFET Case: PDFN56U Power dissipation: 45W Polarisation: unipolar Gate charge: 104nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 16A кількість в упаковці: 1 шт |
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TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 105nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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TSM051N04LCP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Power dissipation: 18W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM05N03CW RPG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 7nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 133 шт: термін постачання 14-21 дні (днів) |
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TSM060N03CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 51A Power dissipation: 54W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 11.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 46 шт: термін постачання 14-21 дні (днів) |
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TSM070NB04CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Power dissipation: 28W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM070NB04LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Power dissipation: 28W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM085P03CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM089N08LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Power dissipation: 17W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 8.9mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM090N03CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 7.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 81nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM10NC60CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 33nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM10NC65CF C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 900mΩ Mounting: THT Gate charge: 34nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM110NB04CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM110NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 9.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM110NB04LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM120N06LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 14W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 36.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM120N06LCS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 37nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM126CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 800Ω Mounting: SMD Gate charge: 1.18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM130NB06CR RLG | TAIWAN SEMICONDUCTOR |
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TSM130NB06LCR RLG | TAIWAN SEMICONDUCTOR |
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TSM150NB04CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 19nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM150NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 8A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM150NB04LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM160P02CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±10V On-state resistance: 16mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM170N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 46W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 15nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM180P03CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.6nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM190N08CZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 14A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM1NB60CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: DPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM1NB60CW RPG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM210N02CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23 Mounting: SMD Gate charge: 5.8nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±10V Polarisation: unipolar Power dissipation: 1.56W Type of transistor: N-MOSFET On-state resistance: 21mΩ Drain current: 4.2A Drain-source voltage: 20V кількість в упаковці: 1 шт |
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TSM220NB06CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM220NB06LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM2301ACX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 7.2nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 576 шт: термін постачання 14-21 дні (днів) |
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TSM2302CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23 Mounting: SMD Gate charge: 7.8nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Power dissipation: 0.3W Type of transistor: N-MOSFET On-state resistance: 65mΩ Drain current: 3.2A Drain-source voltage: 20V кількість в упаковці: 1 шт |
на замовлення 2099 шт: термін постачання 14-21 дні (днів) |
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TSM2305CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 55mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM2306CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 7nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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TSM2307CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM2308CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 156mΩ Mounting: SMD Gate charge: 3.99nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM2309CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.2nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 990 шт: термін постачання 14-21 дні (днів) |
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TSM230N06CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Power dissipation: 53W Case: DPAK Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM2312CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Mounting: SMD Gate charge: 14nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Power dissipation: 0.48W Type of transistor: N-MOSFET On-state resistance: 33mΩ Drain current: 4.9A Drain-source voltage: 20V кількість в упаковці: 1 шт |
товар відсутній |
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TSM2314CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23 Mounting: SMD Gate charge: 14nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Polarisation: unipolar Power dissipation: 0.8W Type of transistor: N-MOSFET On-state resistance: 33mΩ Drain current: 4.9A Drain-source voltage: 20V кількість в упаковці: 1 шт |
на замовлення 499 шт: термін постачання 14-21 дні (днів) |
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TSM2318CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.9A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM2323CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM2328CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23 Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1.38W Polarisation: unipolar Gate charge: 11.1nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: 100V кількість в упаковці: 1 шт |
товар відсутній |
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TSM240N03CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.1A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 4.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 441 шт: термін постачання 14-21 дні (днів) |
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TSD30H100CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.78V
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Load current: 30A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 30A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.78V
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Load current: 30A
кількість в упаковці: 1 шт
товар відсутній
TSD30H120CW MNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 200A
Max. forward voltage: 0.84V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 200A
Max. forward voltage: 0.84V
кількість в упаковці: 1 шт
товар відсутній
TSD30H150CW MNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 30A; D2PAK
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Load current: 30A
Max. forward voltage: 0.9V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 30A; D2PAK
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Load current: 30A
Max. forward voltage: 0.9V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
кількість в упаковці: 1 шт
товар відсутній
TSF40H200C C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.8V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.8V
кількість в упаковці: 1 шт
товар відсутній
TSM025NB04CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM025NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM033NB04CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
TSM033NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
TSM042N03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOP8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOP8
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.95 грн |
23+ | 46.09 грн |
63+ | 41.96 грн |
TSM045NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Mounting: SMD
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Case: PDFN56U
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 104nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 16A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Mounting: SMD
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Case: PDFN56U
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 104nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 16A
кількість в упаковці: 1 шт
товар відсутній
TSM048NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 201.7 грн |
5+ | 174.6 грн |
8+ | 135.03 грн |
21+ | 127.19 грн |
1000+ | 124.57 грн |
TSM051N04LCP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM05N03CW RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 73.18 грн |
6+ | 49.03 грн |
25+ | 35.72 грн |
33+ | 30.75 грн |
91+ | 29.01 грн |
1000+ | 28.31 грн |
TSM060N03CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 54.82 грн |
24+ | 43.73 грн |
65+ | 41.38 грн |
500+ | 39.72 грн |
TSM070NB04CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM070NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Power dissipation: 28W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM085P03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM089N08LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM090N03CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM100N06CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM10N80CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM10N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM10NC60CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 33nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 33nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM10NC65CF C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 900mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 900mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM110NB04CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM110NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM110NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM120N06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM120N06LCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM126CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM130NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
TSM130NB06CR-RLG SMD N channel transistors
TSM130NB06CR-RLG SMD N channel transistors
товар відсутній
TSM130NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
TSM130NB06LCR-RLG SMD N channel transistors
TSM130NB06LCR-RLG SMD N channel transistors
товар відсутній
TSM150NB04CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM150NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 8W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM150NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 19W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM160P02CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM170N06CH X0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM180P03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM190N08CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM1NB60CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM1NB60CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM1NB60CW RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM210N02CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
TSM220NB06CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM220NB06LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2301ACX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 450mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 576 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.92 грн |
25+ | 18.36 грн |
72+ | 14.11 грн |
197+ | 13.33 грн |
3000+ | 13.07 грн |
TSM2302CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Mounting: SMD
Gate charge: 7.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.3W
Type of transistor: N-MOSFET
On-state resistance: 65mΩ
Drain current: 3.2A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Mounting: SMD
Gate charge: 7.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.3W
Type of transistor: N-MOSFET
On-state resistance: 65mΩ
Drain current: 3.2A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
на замовлення 2099 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.92 грн |
25+ | 18.36 грн |
72+ | 14.2 грн |
198+ | 13.42 грн |
3000+ | 13.07 грн |
TSM2305CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2306CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.92 грн |
7+ | 39.62 грн |
25+ | 28.92 грн |
44+ | 23 грн |
121+ | 21.78 грн |
TSM2307CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2308CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 3.99nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 3.99nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2309CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 990 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 40.34 грн |
10+ | 30.94 грн |
25+ | 24.04 грн |
64+ | 15.85 грн |
175+ | 14.98 грн |
9000+ | 14.37 грн |
TSM230N06CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 53W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; 53W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 53W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2312CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.48W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.48W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
TSM2314CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 0.8W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Mounting: SMD
Gate charge: 14nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 0.8W
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Drain current: 4.9A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
на замовлення 499 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.92 грн |
7+ | 39.62 грн |
25+ | 28.92 грн |
44+ | 23.35 грн |
121+ | 22.04 грн |
TSM2318CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2323CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TSM2328CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.38W
Polarisation: unipolar
Gate charge: 11.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.38W
Polarisation: unipolar
Gate charge: 11.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
кількість в упаковці: 1 шт
товар відсутній
TSM240N03CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 441 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.92 грн |
7+ | 39.08 грн |
25+ | 26.31 грн |
54+ | 18.82 грн |
147+ | 17.86 грн |